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    Method for producing silicon nitride films and silicon oxynitride films by chemical vapor deposition
    2.
    发明申请
    Method for producing silicon nitride films and silicon oxynitride films by chemical vapor deposition 审中-公开
    通过化学气相沉积法生产氮化硅膜和氧氮化硅膜的方法

    公开(公告)号：US20070160774A1

    公开(公告)日：2007-07-12

    申请号：US10587427

    申请日：2005-01-19

    申请人： Eri Tsukada ,  Christian Dussarrat ,  Jean-Marc Girard

    发明人： Eri Tsukada ,  Christian Dussarrat ,  Jean-Marc Girard

    IPC分类号： H05H1/24 ,  H01L21/31

    CPC分类号： C23C16/308 ,  C23C16/34 ,  C23C16/345 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/02271

    摘要： To provide a CVD-based method for the relatively low temperature production of silicon nitride films and silicon oxynitride films that exhibit excellent film properties wherein said method is not accompanied by the production of ammonium chloride. Gaseous aminosilane such as tris(isopropylamino)silane and a gaseous hydrazine compound such as dimethylhydrazine are fed into a chemical vapor deposition reaction chamber that holds at least one substrate and silicon nitride film is formed on the substrate by reacting the two gases in said chemical vapor deposition reaction chamber.

    摘要翻译： 为了提供用于相对低温生产氮化硅膜和氧氮化硅膜的基于CVD的方法，其表现出优异的膜性质，其中所述方法不伴随氯化铵的生产。 将气态氨基硅烷如三（异丙基氨基）硅烷和气态肼化合物如二甲基肼进料到化学气相沉积反应室中，所述化学气相沉积反应室保持至少一个基底，并且通过使所述化学气体中的两种气体反应在基底上形成氮化硅膜 沉积反应室。

    Method for producing silicon nitride films
    7.
    发明授权
    Method for producing silicon nitride films 有权
    氮化硅膜的制造方法

    公开(公告)号：US08357430B2

    公开(公告)日：2013-01-22

    申请号：US11573727

    申请日：2005-08-17

    申请人： Christian Dussarrat ,  Jean-Marc Girard ,  Takako Kimura

    发明人： Christian Dussarrat ,  Jean-Marc Girard ,  Takako Kimura

    IPC分类号： C23C16/34

    CPC分类号： C23C16/345 ,  H01L21/3185

    摘要： (Problem) To provide a method for producing silicon nitride films by vapor deposition that, while employing trisilylamine as precursor, can produce silicon nitride films that exhibit excellent film properties and can do so at relatively low temperatures and relatively high growth rates. (Solution) Method for producing silicon nitride film, said method being characterized by feeding gaseous trisilylamine and gaseous nitrogen source comprising at least two amine-type compounds selected from amine-type compounds with formula (1) NR1R2R3 (R1, R2, and R3 are each independently selected from hydrogen and C1-6 hydrocarbyl) into a reaction chamber that holds at least one substrate and forming silicon nitride film on said at least one substrate by reacting the trisilylamine and said nitrogen source.

    摘要翻译： （问题）为了提供通过气相沉积制造氮化硅膜的方法，在使用三甲胺作为前体的同时，可以生产出显示出优异的膜性能的氮化硅膜，并且可以在相对较低的温度和较高的生长速率下进行。 （溶液）氮化硅膜的制造方法，其特征在于，供给气态三甲胺和气态氮源，所述气态三甲胺和气态氮源包含至少两种选自式（1）的胺类化合物的胺类化合物：NR1R2R3（R1，R2和R3分别为 各自独立地选自氢和C 1-6烃基）转化成反应室，其保持至少一个基底并通过使三甲胺和所述氮源反应在所述至少一个基底上形成氮化硅膜。

    Method for Cleaning Film-Forming Apparatuses
    8.
    发明申请
    Method for Cleaning Film-Forming Apparatuses 审中-公开
    清洗成膜装置的方法

    公开(公告)号：US20080121249A1

    公开(公告)日：2008-05-29

    申请号：US10583641

    申请日：2004-12-10

    申请人： Julien Gatineau ,  Christian Dussarrat ,  Kazutaka Yanagita ,  Tomomi Fujita ,  Jean-Marc Girard

    发明人： Julien Gatineau ,  Christian Dussarrat ,  Kazutaka Yanagita ,  Tomomi Fujita ,  Jean-Marc Girard

    IPC分类号： B08B5/00

    CPC分类号： B08B7/00 ,  C23C14/564 ,  C23C16/4405 ,  C23C16/4412

    摘要： To provide an efficient method for cleaning film-forming apparatuses in order to remove a ruthenium-type deposit residing on a constituent member of a film-forming apparatus after said apparatus has been used to form a film comprising ruthenium or solid ruthenium oxide, wherein at least the surface region of the ruthenium-type deposit comprises solid ruthenium oxide.A ruthenium-type deposit, at least the surface region of which is solid ruthenium oxide, is brought into contact with reducing gas that contains a reducing species comprising hydrogen or hydrogen radical and the solid ruthenium oxide is thereby converted into ruthenium metal. This ruthenium metal is subsequently converted into volatile ruthenium oxide by bringing the ruthenium metal into contact with an oxidizing gas that contains an oxidizing species comprising an oxygenated compound, and this volatile ruthenium oxide is removed from the film-forming apparatus.

    摘要翻译： 为了提供一种清洁成膜装置的有效方法，以便在所述装置用于形成包含钌或固体氧化钌的膜之后，去除位于成膜装置的构成部件上的钌型沉积物，其中在 钌型沉积物的表面区域最少包含固体氧化钌。 至少其表面区域为固体氧化钌的钌型沉积物与含有包含氢或氢原子的还原物质的还原气体接触，由此将固体氧化钌转化为金属钌。 通过使钌金属与包含含氧化合物的氧化物质的氧化气体接触，随后将该钌金属转化为挥发性氧化钌，并且从成膜设备中除去该挥发性氧化钌。

    Hexakis(monohydrocarbylamino)disilanes and method for the preparation thereof
    9.
    发明授权
    Hexakis(monohydrocarbylamino)disilanes and method for the preparation thereof 有权
    六烷基（单烃基氨基）二硅烷及其制备方法

    公开(公告)号：US07064083B2

    公开(公告)日：2006-06-20

    申请号：US11222361

    申请日：2005-09-08

    申请人： Christian Dussarrat ,  Jean-Marc Girard

    发明人： Christian Dussarrat ,  Jean-Marc Girard

    IPC分类号： H01L21/31

    CPC分类号： C07F7/10

    摘要： A composition and method of preparation, to provide silane compounds that are free of chlorine. The compounds are hexakis(monohydrocarbylamino)disilanes with general formula (I) ((R)HN)3—Si—Si—(NH(R))3  (I) wherein each R independently represents a C1 to C4 hydrocarbyl. These disilanes may be synthesized by reacting hexachlorodisilane in organic solvent with at least 6-fold moles of the monohydrocarbylamine RNH2 (wherein R is a C1 to C4 hydrocarbyl). Such compounds have excellent film-forming characteristics at low temperatures. These films, particularly in the case of silicon nitride and silicon oxynitride, also have excellent handling characteristics.

    摘要翻译： 提供不含氯的硅烷化合物的组合物和制备方法。 化合物是具有通式（I）的六（单烃基氨基）二硅烷，其中式（I）<βin-line-formula description =“In-line Formulas”end =“lead”→（（R）HN） -Si-Si-（NH（R））3（I）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中每个R独立地表示 C 1至C 4烃基。 这些二硅烷可以通过使六氯二硅烷在有机溶剂中与至少6倍摩尔的单烃基胺R N H 2（其中R是C 1至C 4）的反应来合成 烃基）。 这些化合物在低温下具有优异的成膜特性。 这些膜，特别是在氮化硅和氮氧化硅的情况下，也具有优异的处理特性。