公开(公告)号：US09941366B2

公开(公告)日：2018-04-10

申请号：US15105278

申请日：2014-10-14

申请人： Atsushi Onogi ,  Shinichiro Miyahara

发明人： Atsushi Onogi ,  Shinichiro Miyahara

IPC分类号： H01L21/324 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L29/40 ,  H01L29/12 ,  H01L29/16 ,  H01L21/02

CPC分类号： H01L29/408 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/324 ,  H01L29/06 ,  H01L29/0623 ,  H01L29/12 ,  H01L29/1608 ,  H01L29/66734 ,  H01L29/78 ,  H01L29/7811 ,  H01L29/7813

摘要： Described herein is a semiconductor device comprising: a semiconductor substrate; a trench provided at a surface of the semiconductor substrate; a first insulating layer covering an inner surface of the trench; and a second insulating layer located at a surface of the first insulating layer in the trench. A refraction index of the first insulating layer is larger than a refraction index of the second insulating layer.

公开(公告)号：US08871643B2

公开(公告)日：2014-10-28

申请号：US13976266

申请日：2011-02-08

申请人： Hiroomi Eguchi ,  Takashi Okawa ,  Atsushi Onogi

发明人： Hiroomi Eguchi ,  Takashi Okawa ,  Atsushi Onogi

IPC分类号： H01L21/302 ,  H01L29/66 ,  H01L29/423 ,  H01L29/739 ,  H01L21/306

CPC分类号： H01L29/6625 ,  H01L21/30604 ,  H01L29/4236 ,  H01L29/66325 ,  H01L29/7394

摘要： A manufacturing method for manufacturing a lateral semiconductor device having an SOI (Silicon on Insulator) substrate, the lateral semiconductor device comprising a semiconductor layer that includes a buried oxide layer and a drift region, the manufacturing method comprising an etching process of etching, by a predetermined depth, a LOCOS oxide that projects from a surface of the semiconductor layer by a predetermined thickness and is embedded in the semiconductor layer by a predetermined thickness, and a trench forming process of simultaneously forming a first trench extending from the drift region toward the buried oxide layer, and a second trench extending from a portion obtained by the etching in the etching process toward the buried oxide layer, at a same etching rate, and stopping forming the first trench and the second trench at a time when the second trench reaches the buried oxide layer.

摘要翻译： 一种用于制造具有SOI（绝缘体上硅）衬底的横向半导体器件的制造方法，所述横向半导体器件包括包括掩埋氧化物层和漂移区的半导体层，所述制造方法包括通过蚀刻的蚀刻工艺， 预定深度，从半导体层的表面突出预定厚度并以预定厚度嵌入到半导体层中的LOCOS氧化物，以及沟槽形成工艺，其同时形成从漂移区延伸到掩埋的第一沟槽 氧化物层，以及从蚀刻处理中通过蚀刻获得的部分以相同的蚀刻速率向掩埋氧化物层延伸的第二沟槽，并且在第二沟槽到达第二沟槽时停止形成第一沟槽和第二沟槽 掩埋氧化层。

公开(公告)号：US20110003028A1

公开(公告)日：2011-01-06

申请号：US12866891

申请日：2009-02-18

申请人： Atsushi Onogi ,  Mitsuko Ogaki

发明人： Atsushi Onogi ,  Mitsuko Ogaki

IPC分类号： B65D77/02 ,  A23G4/18 ,  A23G1/50

CPC分类号： B65D5/18 ,  B65B5/024 ,  B65D71/0085 ,  B65D75/14 ,  B65D75/38 ,  B65D75/5827 ,  B65D77/02 ,  B65D85/60 ,  B65D2101/0015 ,  B65D2313/10

摘要： Provided are a food packed member holding sheet-like food in a compact package, that allows an eater to easily take out sheet-like food and easily eat it even when either hand of the eater's is unavailable, and a method of producing the same. The inventive packed member is a packed member of sheet-like food such as chewing gum or chocolate, wherein plural pieces of sheet-like food (1) are wrapped respectively with a wrapping sheet (2) which includes a picking part (4), a fixing part (5), and a fragile part (3) between the both parts, and is openable by cutting the fragile part (3) and taking out the picking part (4), and a sheet-like food unit (1a) formed by joining the plural pieces of wrapped sheet-like food (1) by joining a base sheet (6) at the fixing parts (5) of the wrapping sheets (2) is held while fixed to a packaging container material (7, 31, 41) at the joining base sheet (6), and the inventive production method includes producing the packed member by placing the sheet-like food unit (1a) on a packaging material (7, 31, 41).

摘要翻译： 提供了一种以紧凑的包装保持片状食品的食品包装部件，其允许食客容易地取出片状食物，并且即使食用者的任一只手不可用也容易食用，以及其制造方法。 本发明的包装物是片状食品如口香糖或巧克力的包装物，其中多片片状食品（1）分别用包括拾取部分（4）的包装片（2）包裹， 固定部分（5）和两个部分之间的脆弱部分（3），并且可通过切割脆弱部分（3）并取出拾取部分（4）而打开;以及片状食物单元（1a） 通过将包装片（2）的固定部分（5）上的基片（6）接合来连接多个包裹的片状食品（1）而形成的固定在包装容器材料（7,31 ，41），并且本发明的制造方法包括通过将片状食品单元（1a）放置在包装材料（7,31,41）上来制造包装构件。

公开(公告)号：US20100297309A1

公开(公告)日：2010-11-25

申请号：US12864274

申请日：2009-01-26

申请人： Atsushi Onogi ,  Mitsuko Ogaki

发明人： Atsushi Onogi ,  Mitsuko Ogaki

IPC分类号： B65D77/02

CPC分类号： B65D75/38 ,  B65D5/2057 ,  B65D75/14 ,  B65D75/5827 ,  B65D77/02 ,  B65D85/60 ,  B65D2313/10

摘要： A packaging case is provided wherein a sheet-like food can be easily taken out to be eaten even when one hand is filled with something as well as the sheet-like foods can be held compactly. A package holding a sheet-like food 1 wrapped with a wrapper, such as chewing gums or chocolates, in the packaging case is characterized in that the wrapper can be opened by cutting perforations 5 between an extracting portion 6 and a fixing portion 7 to extract the extracting portion 6, and the each sheet-like food 1 is fixed to packaging cases 8 and 31 with the fixing portion 7 of the wrapper.

摘要翻译： 提供了一种包装盒，其中即使一只手充满东西也可以容易地取出片状食物以被吃掉，并且片状食物可以紧紧地保持。 在包装盒中包装有如包装物（例如口香糖或巧克力）包裹的片状食品1的包装的特征在于，可以通过在提取部分6和固定部分7之间切割穿孔5来打开包装纸，以提取 提取部分6和每个片状食物1用包装纸的固定部分7固定到包装盒8和31上。

公开(公告)号：US20130323356A1

公开(公告)日：2013-12-05

申请号：US14000769

申请日：2012-02-15

申请人： Atsushi Onogi ,  Kaori Horie ,  Mitsuko Ogaki

发明人： Atsushi Onogi ,  Kaori Horie ,  Mitsuko Ogaki

IPC分类号： B65D77/02

CPC分类号： B65D77/02 ,  B65D5/18 ,  B65D5/324 ,  B65D5/326 ,  B65D5/427 ,  B65D5/542 ,  B65D5/6685 ,  B65D75/5827 ,  B65D85/60 ,  B65D2313/10

摘要： A packaging container is provided, which is configured such that a plurality of food pieces are contained in anteroposteriorly overlapping relation in a plurality of rows, and satisfies requirements for the compactness of the container and the pick-out easiness for picking out each of the food pieces. In a packaging container (A) having a slidable configuration, chewing gum pieces (40) (food strips) can be contained upright in side-by-side relation in a front chamber (L) and in a rear chamber (B) located behind the front chamber (L). The rear chamber (B) is combined with the front chamber (L) so as to be slidable upward with respect to the front chamber (L). Therefore, there is no need to preliminarily provide a raised bottom portion in a rear portion of the packaging container (A) for locating chewing gum strips (40) contained in a rear row (rear chamber (B)) at a higher height level than chewing gum strips (40) contained in a front row (front chamber (L)), but the chewing gum strips (40) can be easily picked out by sliding the rear chamber (B) upward with respect to the front chamber (L) as required to locate the rear row chewing gum strips (40) at a higher height level than the front row chewing gum strips (40). This obviates the need for providing the raised bottom portion, thereby achieving the size reduction of the packaging container (A).

摘要翻译： 提供了一种包装容器，其构造成使得多个食品块以多行的前后重叠关系包含，并且满足了容器的紧凑性和拾取每种食物的容易性的要求 件 在具有可滑动构造的包装容器（A）中，可以在前室（L）和位于后室（B）中的并排关系中竖立包含口香糖块（食品条）（食品条） 前室（L）。 后室（B）与前室（L）组合以相对于前室（L）向上滑动。 因此，不需要在包装容器（A）的后部预先设置凸起的底部，用于定位在后排（后室（B））中所包含的口香糖条（40）的高度高于 包含在前排（前室（L））中的口香糖条（40）），但是通过相对于前室（L）向后滑动后室（B），可以容易地取出口香糖条（40） 根据需要将后排口香糖条（40）定位在比前排口香糖条（40）更高的高度水平处。 这样就避免了提供凸起的底部部分的需要，从而实现了包装容器（A）的尺寸减小。

公开(公告)号：US20130181252A1

公开(公告)日：2013-07-18

申请号：US13876170

申请日：2011-09-26

申请人： Hiroomi Eguchi ,  Atsushi Onogi ,  Takashi Okawa ,  Kiyoharu Hayakawa

发明人： Hiroomi Eguchi ,  Atsushi Onogi ,  Takashi Okawa ,  Kiyoharu Hayakawa

IPC分类号： H01L29/06

CPC分类号： H01L29/0611 ,  H01L27/0676 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/7394 ,  H01L29/861

摘要： A semiconductor device includes a semiconductor layer; a first type of a first semiconductor element that is arranged in a first element region of the semiconductor layer, has first and second main electrodes, and switches current; and a second type of a second semiconductor element that is arranged in a second element region of the semiconductor layer, has third and fourth main electrodes, and freewheels the current. The first and second element regions are adjacent in a direction orthogonal to a direction in which current flows, and are formed in a loop shape over the entire element region when the semiconductor layer is viewed from above. The first main electrode is electrically connected to the third main electrode, and the second main electrode is electrically connected to the fourth main electrode. When the semiconductor layer is viewed from above, a ratio of a length of the first main electrode to a length of the second main electrode is larger than a ratio of a length of the third main electrode to a length of the fourth main electrode.

摘要翻译： 半导体器件包括半导体层; 布置在半导体层的第一元件区域中的第一半导体元件的第一类型具有第一和第二主电极并切换电流; 以及布置在所述半导体层的第二元件区域中的第二类型的第二半导体元件，具有第三和第四主电极，并且使所述电流自由转动。 第一和第二元件区域在与电流流动的方向正交的方向上相邻，并且当从上方观察半导体层时，在整个元件区域上形成为环形。 第一主电极与第三主电极电连接，第二主电极与第四主电极电连接。 当从上方观察半导体层时，第一主电极的长度与第二主电极的长度的比例大于第三主电极的长度与第四主电极的长度的比率。

公开(公告)号：US09112024B2

公开(公告)日：2015-08-18

申请号：US14111704

申请日：2011-05-17

申请人： Atsushi Onogi ,  Hiroomi Eguchi ,  Takashi Okawa

发明人： Atsushi Onogi ,  Hiroomi Eguchi ,  Takashi Okawa

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/739 ,  H01L29/06 ,  H01L29/08 ,  H01L29/40 ,  H01L29/423

CPC分类号： H01L29/7816 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/402 ,  H01L29/42368 ,  H01L29/7394 ,  H01L29/7824

摘要： A lateral semiconductor device including a semiconductor substrate; a buried oxide layer formed on the semiconductor substrate, and an active layer formed on the buried oxide layer. The active layer includes a first conductivity type well region, a second conductivity type well region, and a first conductivity type drift region interposed between the first conductivity type well region and the second conductivity type well region. A region where current flows because of carriers moving between the first conductivity type well region and the second conductivity type well region, and a region where no current flows are formed alternately between the first conductivity type well region and the second conductivity type well region, in a direction perpendicular to a carrier moving direction when viewed in a plan view.

摘要翻译： 一种包括半导体衬底的横向半导体器件; 形成在半导体衬底上的掩埋氧化物层和形成在掩埋氧化物层上的有源层。 有源层包括介于第一导电类型阱区和第二导电类型阱区之间的第一导电类型阱区，第二导电类型阱区和第一导电类型漂移区。 由于载流子在第一导电类型阱区域和第二导电类型阱区域之间移动，并且在第一导电类型阱区域和第二导电类型阱区域之间交替形成没有电流流动的区域，电流流动的区域， 在平面图中观察时垂直于载体移动方向的方向。

公开(公告)号：US09048107B2

公开(公告)日：2015-06-02

申请号：US13876170

申请日：2011-09-26

申请人： Hiroomi Eguchi ,  Atsushi Onogi ,  Takashi Okawa ,  Kiyoharu Hayakawa

发明人： Hiroomi Eguchi ,  Atsushi Onogi ,  Takashi Okawa ,  Kiyoharu Hayakawa

IPC分类号： H01L29/06 ,  H01L27/06 ,  H01L29/08 ,  H01L29/739 ,  H01L29/861 ,  H01L29/16 ,  H01L29/20

CPC分类号： H01L29/0611 ,  H01L27/0676 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/7394 ,  H01L29/861

摘要： A semiconductor device includes a semiconductor layer; a first type of a first semiconductor element that is arranged in a first element region of the semiconductor layer, has first and second main electrodes, and switches current; and a second type of a second semiconductor element that is arranged in a second element region of the semiconductor layer, has third and fourth main electrodes, and freewheels the current. The first and second element regions are adjacent in a direction orthogonal to a direction in which current flows, and are formed in a loop shape over the entire element region when the semiconductor layer is viewed from above. The first main electrode is electrically connected to the third main electrode, and the second main electrode is electrically connected to the fourth main electrode. When the semiconductor layer is viewed from above, a ratio of a length of the first main electrode to a length of the second main electrode is larger than a ratio of a length of the third main electrode to a length of the fourth main electrode.

摘要翻译： 半导体器件包括半导体层; 布置在半导体层的第一元件区域中的第一半导体元件的第一类型具有第一和第二主电极并切换电流; 以及布置在所述半导体层的第二元件区域中的第二类型的第二半导体元件，具有第三和第四主电极，并且使所述电流自由转动。 第一和第二元件区域在与电流流动的方向正交的方向上相邻，并且当从上方观察半导体层时，在整个元件区域上形成为环形。 第一主电极与第三主电极电连接，第二主电极与第四主电极电连接。 当从上方观察半导体层时，第一主电极的长度与第二主电极的长度的比例大于第三主电极的长度与第四主电极的长度的比率。

公开(公告)号：US20140035036A1

公开(公告)日：2014-02-06

申请号：US14111704

申请日：2011-05-17

申请人： Atsushi Onogi ,  Hiroomi Eguchi ,  Takashi Okawa

发明人： Atsushi Onogi ,  Hiroomi Eguchi ,  Takashi Okawa

IPC分类号： H01L29/78

CPC分类号： H01L29/7816 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/402 ,  H01L29/42368 ,  H01L29/7394 ,  H01L29/7824

摘要： A lateral semiconductor device including a semiconductor substrate; a buried oxide layer formed on the semiconductor substrate, and an active layer formed on the buried oxide layer. The active layer includes a first conductivity type well region, a second conductivity type well region, and a first conductivity type drift region interposed between the first conductivity type well region and the second conductivity type well region. A region where current flows because of carriers moving between the first conductivity type well region and the second conductivity type well region, and a region where no current flows are formed alternately between the first conductivity type well region and the second conductivity type well region, in a direction perpendicular to a carrier moving direction when viewed in a plan view.

摘要翻译： 一种包括半导体衬底的横向半导体器件; 形成在半导体衬底上的掩埋氧化物层和形成在掩埋氧化物层上的有源层。 有源层包括介于第一导电类型阱区和第二导电类型阱区之间的第一导电类型阱区，第二导电类型阱区和第一导电类型漂移区。 由于载流子在第一导电类型阱区域和第二导电类型阱区域之间移动，并且在第一导电类型阱区域和第二导电类型阱区域之间交替形成没有电流流动的区域，电流流动的区域， 在平面图中观察时垂直于载体移动方向的方向。

公开(公告)号：US09178033B2

公开(公告)日：2015-11-03

申请号：US14201096

申请日：2014-03-07

申请人： Atsushi Onogi

发明人： Atsushi Onogi

IPC分类号： H01L29/66 ,  H01L21/04 ,  H01L29/16 ,  H01L21/3065

CPC分类号： H01L29/66068 ,  H01L21/046 ,  H01L21/3065 ,  H01L29/0623 ,  H01L29/1608 ,  H01L29/42368 ,  H01L29/7813

摘要： A manufacturing method of a semiconductor device includes: a semiconductor substrate including a drain, a drift making contact with a front face of the drain, a body contacting with a front face of the drift, a source provided in part of a front face of the body, and a floating surrounded by the drift; and a gate including an insulator formed on an inner wall of a trench and a electrode disposed inside the insulator and which has a bottom portion contacting with the floating, the manufacturing method includes: forming the trench in a semiconductor wafer so as to have a bottom portion in which an end portion in a short direction perpendicular to a longitudinal direction thereof is deeper than a central portion; injecting an impurity ions into the bottom portion of the trench; and forming the central portion of the trench in the short direction to be deepened.

摘要翻译： 半导体器件的制造方法包括：半导体衬底，其包括漏极，与漏极的前表面漂移接触，与漂移体的前面接触的本体，源极 身体，漂浮的包围; 以及包括形成在沟槽的内壁上的绝缘体的栅极和设置在绝缘体内部并具有与浮动接触的底部的电极，所述制造方法包括：在半导体晶片中形成沟槽以具有底部 垂直于其纵向方向的短方向的端部比中心部分更深的部分; 将杂质离子注入沟槽的底部; 并且在短方向上形成沟槽的中心部分以加深。