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公开(公告)号：USD668188S1
公开(公告)日：2012-10-02
申请号：US29396971
申请日：2011-07-08
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公开(公告)号：USD668593S1
公开(公告)日：2012-10-09
申请号：US29396745
申请日：2011-07-06
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公开(公告)号：USD595192S1
公开(公告)日：2009-06-30
申请号：US29309673
申请日：2008-09-25
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公开(公告)号：US08809727B2
公开(公告)日：2014-08-19
申请号：US13105981
申请日：2011-05-12
IPC分类号： B23K10/00
CPC分类号： H01J37/32018 , H01J37/32036 , H01J37/32467 , H01J37/32724 , H01J37/32899 , H01L21/67109 , H01L21/6719 , H01L21/68742 , H01L21/68771
摘要： The present invention relates to a heat treatment apparatus that performs activation annealing or defect repair annealing and surface oxidization which succeed impurity doping intended to control the conductive property of a semiconductor substrate. In the present invention, a sample to be heated is placed on a lower electrode in a plasma treatment chamber. A gap between an upper electrode and the lower electrode is filled with a gap whose main raw material is a rare gas (helium, argon, krypton, xenon, or the like) having a pressure close to the atmospheric pressure. A power fed from a high-frequency power supply is applied to the upper electrode in order to induce an atmospheric-pressure glow discharge. Gas heating in the gap between the electrodes, which depends on the glow discharge, is used to heat-treat the sample to be heated.
摘要翻译： 本发明涉及一种执行活化退火或缺陷修复退火和表面氧化的热处理设备，该热处理设备接受用于控制半导体衬底的导电性能的杂质掺杂。 在本发明中，将待加热的样品放置在等离子体处理室中的下电极上。 上部电极和下部电极之间的间隙填充有主要原料是具有接近大气压的压力的稀有气体（氦，氩，氪，氙等）的间隙。 从高频电源馈送的电力施加到上电极，以引起大气压辉光放电。 电极之间的间隙中的气体加热（其取决于辉光放电）用于热处理待加热的样品。
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公开(公告)号：US07842619B2
公开(公告)日：2010-11-30
申请号：US12202692
申请日：2008-09-02
申请人： Masatoshi Miyake , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
发明人： Masatoshi Miyake , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： H01L21/00
CPC分类号： H01L21/31138 , H01J37/321 , H01J37/32165 , H01J37/3244 , H01J37/32449 , H01L21/31116 , Y10S438/905
摘要： A plasma processing method includes etching an insulating film of a sample to be processed using plasma generated from etching gas, supplying a large flow of inert gas from above the sample while having the sample mounted on a sample mounting stage, supplying deposit removal gas to only an area near a side wall of a processing chamber, and controlling a plasma density distribution to thereby vary a plasma density at a center area of the processing chamber and a plasma density at an area near the side wall of the processing chamber so as to perform a deposited film removing process for removing the film deposited on the side wall of the processing chamber.
摘要翻译： 等离子体处理方法包括使用蚀刻气体产生的等离子体对待处理样品的绝缘膜进行蚀刻，同时将样品安装在样品安装台上，从样品安装台提供大量惰性气体，仅向其提供沉积物去除气体 处理室的侧壁附近的区域，并且控制等离子体密度分布，从而改变处理室的中心区域处的等离子体密度和处理室侧壁附近的等离子体密度，以便执行 用于去除沉积在处理室的侧壁上的膜的沉积膜去除工艺。
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公开(公告)号：US20100029024A1
公开(公告)日：2010-02-04
申请号：US12202692
申请日：2008-09-02
申请人： Masatoshi Miyake , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
发明人： Masatoshi Miyake , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： H01L21/66 , H01L21/3065
CPC分类号： H01L21/31138 , H01J37/321 , H01J37/32165 , H01J37/3244 , H01J37/32449 , H01L21/31116 , Y10S438/905
摘要： The invention provides a plasma processing method capable of reducing the damage applied to the low-k film or the underlayer. The method uses a plasma processing apparatus comprising gas supply means 41, 42 for respectively supplying processing gas independently to a center area of the processing chamber 1 and to an area near the sidewall thereof; a sample mounting electrode 13 for mounting a sample W to be processed; a high frequency power supply 21 for generating plasma; an antenna 11; and a plasma generating means 17 for generating plasma in the processing chamber; the method comprising etching an insulating film on the sample W using plasma; and supplying a large flow of inert gas from the center area of the chamber while having the sample W mounted on the sample mounting electrode 13, supplying deposit removal gas to only the area near the side wall of the processing chamber 1 and controlling the plasma density distribution to thereby vary the plasma density at the center area of the processing chamber and the plasma density at the area near the side wall of the processing chamber, so as to perform a deposited film removing process for removing the film deposited on the side wall of the processing chamber.
摘要翻译： 本发明提供一种等离子体处理方法，其能够降低对低k膜或底层施加的损伤。 该方法使用包括气体供给装置41,42的等离子体处理装置，用于分别独立地向处理室1的中心区域供应处理气体，并且分配到其侧壁附近的区域; 用于安装待处理样品W的样品安装电极13; 用于产生等离子体的高频电源21; 天线11; 以及用于在处理室中产生等离子体的等离子体产生装置17; 该方法包括使用等离子体蚀刻样品W上的绝缘膜; 并且在将样品W安装在样品安装电极13上的同时，从室的中心区域供给大量惰性气体，仅将沉积物去除气体提供给处理室1的侧壁附近的区域，并控制等离子体密度 从而改变处理室的中心区域处的等离子体密度和处理室侧壁附近的区域的等离子体密度，从而进行沉积膜去除工艺，以去除沉积在侧壁上的膜 处理室。
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公开(公告)号：US08569647B2
公开(公告)日：2013-10-29
申请号：US13185622
申请日：2011-07-19
CPC分类号： H01L21/3247 , C23C16/325 , C23C16/46 , C23C16/5096 , H01J37/32091 , H01J37/32724 , H01J37/32935 , H01L21/67069 , H01L21/6719 , H01L29/1608
摘要： Provided is a heat treatment apparatus in which a heat treatment apparatus in which the thermal efficiency is high, the maintenance expense is low, the throughput is high, the surface roughness of a sample can be reduced, and the discharge uniformity is excellent, although the heat treatment is performed at 1200 ° C. or more.A heat treatment apparatus includes: parallel planar electrodes; a radio-frequency power supply generating plasma by applying radio-frequency power between the parallel planar electrodes; a temperature measuring section measuring the temperature of a heated sample; and a control unit controlling an output of the radio-frequency power supply, wherein at least one of the parallel planar electrodes has a space where the heated sample is installed, therein, and heats the sample in the electrode by the plasma generated between the parallel planar electrodes.
摘要翻译： 提供一种热处理装置，其中热效率高，维护费用低，生产量高，样品表面粗糙度可以降低，并且放电均匀性优异的热处理装置，尽管 在1200℃以上进行热处理。 热处理装置包括：平行平面电极; 射频电源，通过在平行平面电极之间施加射频电力而产生等离子体; 测量加热样品的温度的温度测量部分; 以及控制单元，其控制所述射频电源的输出，其中，所述平行平面电极中的至少一个具有其中安装了所述被加热样品的空间，并且通过在所述平行电极之间产生的等离子体来加热所述电极中的所述样品 平面电极。
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公开(公告)号：US20130112669A1
公开(公告)日：2013-05-09
申请号：US13354358
申请日：2012-01-20
IPC分类号： B23K9/00
CPC分类号： H01J37/32082
摘要： The present invention provides a heat treatment apparatus which can reduce a surface roughing of a processed substrate while keeping a heat efficiency high, even in the case of heating a sample to be heated to 1200° C. or higher. The present invention is a heat treatment apparatus carrying out a heat treatment of a sample to be heated, wherein a plasma generated by a glow electric discharge is used as a heating source, and the sample to be heated is indirectly heated.
摘要翻译： 本发明提供一种热处理装置，即使在将待加热的样品加热至1200℃以上的情况下，也能够在保持热效率高的同时降低加工基板的表面粗糙化。 本发明是一种对待加热样品进行热处理的热处理装置，其中通过辉光放电产生的等离子体被用作加热源，被加热物被间接加热。
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公开(公告)号：US20110284506A1
公开(公告)日：2011-11-24
申请号：US13105981
申请日：2011-05-12
IPC分类号： B23K10/00
CPC分类号： H01J37/32018 , H01J37/32036 , H01J37/32467 , H01J37/32724 , H01J37/32899 , H01L21/67109 , H01L21/6719 , H01L21/68742 , H01L21/68771
摘要： The present invention relates to a heat treatment apparatus that performs activation annealing or defect repair annealing and surface oxidization which succeed impurity doping intended to control the conductive property of a semiconductor substrate. In the present invention, a sample to be heated is placed on a lower electrode in a plasma treatment chamber. A gap between an upper electrode and the lower electrode is filled with a gap whose main raw material is a rare gas (helium, argon, krypton, xenon, or the like) having a pressure close to the atmospheric pressure. A power fed from a high-frequency power supply is applied to the upper electrode in order to induce an atmospheric-pressure glow discharge. Gas heating in the gap between the electrodes, which depends on the glow discharge, is used to heat-treat the sample to be heated.
摘要翻译： 本发明涉及一种执行活化退火或缺陷修复退火和表面氧化的热处理设备，该热处理设备接受用于控制半导体衬底的导电性能的杂质掺杂。 在本发明中，将待加热的样品放置在等离子体处理室中的下电极上。 上部电极和下部电极之间的间隙填充有主要原料是具有接近大气压的压力的稀有气体（氦，氩，氪，氙等）的间隙。 从高频电源馈送的电力施加到上电极，以引起大气压辉光放电。 电极之间的间隙中的气体加热（其取决于辉光放电）用于热处理待加热的样品。
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10.发明授权公开(公告)号：US06342575B1
公开(公告)日：2002-01-29
申请号：US09641752
申请日：2000-08-21
申请人： Masatoshi Miyake , Masaya Arakawa
发明人： Masatoshi Miyake , Masaya Arakawa
IPC分类号： C08G7716
CPC分类号： C08L83/04 , C08G77/04 , Y10S528/901 , C08L2666/44 , C08L2666/54
摘要： A room temperature curable organopolysiloxane composition comprising (1) a hydroxyl end-blocked organopolysiloxane having a viscosity of 10-1,000,000 centistokes at 25° C. in admixture with a premix of (2) methyltriacetoxysilane or a partial hydrolyzate thereof as a curing agent and (3) methanol is improved in shelf stability, physical properties and outer appearance as well as adhesion to aluminum.
摘要翻译： 一种室温可固化的有机基聚硅氧烷组合物，其包含（1）在25℃粘度为10-1,000,000厘沲的羟基封端的有机聚硅氧烷与（2）甲基三乙酰氧基硅烷或其部分水解产物作为固化剂和（ 3）甲醇的贮存稳定性，物理性能和外观以及对铝的粘附性均有所提高。
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