-
公开(公告)号：US08809727B2
公开(公告)日：2014-08-19
申请号：US13105981
申请日：2011-05-12
IPC分类号： B23K10/00
CPC分类号： H01J37/32018 , H01J37/32036 , H01J37/32467 , H01J37/32724 , H01J37/32899 , H01L21/67109 , H01L21/6719 , H01L21/68742 , H01L21/68771
摘要： The present invention relates to a heat treatment apparatus that performs activation annealing or defect repair annealing and surface oxidization which succeed impurity doping intended to control the conductive property of a semiconductor substrate. In the present invention, a sample to be heated is placed on a lower electrode in a plasma treatment chamber. A gap between an upper electrode and the lower electrode is filled with a gap whose main raw material is a rare gas (helium, argon, krypton, xenon, or the like) having a pressure close to the atmospheric pressure. A power fed from a high-frequency power supply is applied to the upper electrode in order to induce an atmospheric-pressure glow discharge. Gas heating in the gap between the electrodes, which depends on the glow discharge, is used to heat-treat the sample to be heated.
摘要翻译： 本发明涉及一种执行活化退火或缺陷修复退火和表面氧化的热处理设备，该热处理设备接受用于控制半导体衬底的导电性能的杂质掺杂。 在本发明中，将待加热的样品放置在等离子体处理室中的下电极上。 上部电极和下部电极之间的间隙填充有主要原料是具有接近大气压的压力的稀有气体（氦，氩，氪，氙等）的间隙。 从高频电源馈送的电力施加到上电极，以引起大气压辉光放电。 电极之间的间隙中的气体加热（其取决于辉光放电）用于热处理待加热的样品。
-
公开(公告)号：US09490104B2
公开(公告)日：2016-11-08
申请号：US13550638
申请日：2012-07-17
IPC分类号： B23K9/00 , H01J37/32 , H01L21/324 , H01L21/67
CPC分类号： H01J37/32091 , H01J37/32522 , H01L21/324 , H01L21/67115
摘要： Provided is a heat treatment apparatus that is high in thermal efficiency and can reduce surface roughness of a substrate to be treated even when a specimen is heated at 1200° C. or higher.The heat treatment apparatus heating the specimen includes a heating plate heated by plasma formed in an area of a gap to heat the specimen.
摘要翻译： 加热试样的热处理装置包括由等离子体加热的加热板，所述等离子体形成在间隙的区域中以加热试样。
-
公开(公告)号：US20130112670A1
公开(公告)日：2013-05-09
申请号：US13550638
申请日：2012-07-17
IPC分类号： B23K9/00
CPC分类号： H01J37/32091 , H01J37/32522 , H01L21/324 , H01L21/67115
摘要： Provided is a heat treatment apparatus that is high in thermal efficiency and can reduce surface roughness of a substrate to be treated even when a specimen is heated at 1200° C. or higher.The heat treatment apparatus heating the specimen includes a heating plate heated by plasma formed in an area of a gap to heat the specimen.
摘要翻译： 提供一种热处理装置，其热效率高，即使在1200℃以上的加热条件下，也能够降低被处理基板的表面粗糙度。 加热试样的热处理装置包括由等离子体加热的加热板，所述等离子体形成在间隙的区域中以加热试样。
-
公开(公告)号：US08569647B2
公开(公告)日：2013-10-29
申请号：US13185622
申请日：2011-07-19
CPC分类号： H01L21/3247 , C23C16/325 , C23C16/46 , C23C16/5096 , H01J37/32091 , H01J37/32724 , H01J37/32935 , H01L21/67069 , H01L21/6719 , H01L29/1608
摘要： Provided is a heat treatment apparatus in which a heat treatment apparatus in which the thermal efficiency is high, the maintenance expense is low, the throughput is high, the surface roughness of a sample can be reduced, and the discharge uniformity is excellent, although the heat treatment is performed at 1200 ° C. or more.A heat treatment apparatus includes: parallel planar electrodes; a radio-frequency power supply generating plasma by applying radio-frequency power between the parallel planar electrodes; a temperature measuring section measuring the temperature of a heated sample; and a control unit controlling an output of the radio-frequency power supply, wherein at least one of the parallel planar electrodes has a space where the heated sample is installed, therein, and heats the sample in the electrode by the plasma generated between the parallel planar electrodes.
摘要翻译： 提供一种热处理装置，其中热效率高，维护费用低，生产量高，样品表面粗糙度可以降低，并且放电均匀性优异的热处理装置，尽管 在1200℃以上进行热处理。 热处理装置包括：平行平面电极; 射频电源，通过在平行平面电极之间施加射频电力而产生等离子体; 测量加热样品的温度的温度测量部分; 以及控制单元，其控制所述射频电源的输出，其中，所述平行平面电极中的至少一个具有其中安装了所述被加热样品的空间，并且通过在所述平行电极之间产生的等离子体来加热所述电极中的所述样品 平面电极。
-
公开(公告)号：US20110284506A1
公开(公告)日：2011-11-24
申请号：US13105981
申请日：2011-05-12
IPC分类号： B23K10/00
CPC分类号： H01J37/32018 , H01J37/32036 , H01J37/32467 , H01J37/32724 , H01J37/32899 , H01L21/67109 , H01L21/6719 , H01L21/68742 , H01L21/68771
摘要： The present invention relates to a heat treatment apparatus that performs activation annealing or defect repair annealing and surface oxidization which succeed impurity doping intended to control the conductive property of a semiconductor substrate. In the present invention, a sample to be heated is placed on a lower electrode in a plasma treatment chamber. A gap between an upper electrode and the lower electrode is filled with a gap whose main raw material is a rare gas (helium, argon, krypton, xenon, or the like) having a pressure close to the atmospheric pressure. A power fed from a high-frequency power supply is applied to the upper electrode in order to induce an atmospheric-pressure glow discharge. Gas heating in the gap between the electrodes, which depends on the glow discharge, is used to heat-treat the sample to be heated.
摘要翻译： 本发明涉及一种执行活化退火或缺陷修复退火和表面氧化的热处理设备，该热处理设备接受用于控制半导体衬底的导电性能的杂质掺杂。 在本发明中，将待加热的样品放置在等离子体处理室中的下电极上。 上部电极和下部电极之间的间隙填充有主要原料是具有接近大气压的压力的稀有气体（氦，氩，氪，氙等）的间隙。 从高频电源馈送的电力施加到上电极，以引起大气压辉光放电。 电极之间的间隙中的气体加热（其取决于辉光放电）用于热处理待加热的样品。
-
公开(公告)号：US09271341B2
公开(公告)日：2016-02-23
申请号：US12955020
申请日：2010-11-29
CPC分类号： H05B7/18
摘要： Provided is a heat treatment apparatus that even when annealing SiC at high temperature, can exhibit a low heat capacity and perform uniform heating. The heat treatment apparatus includes a pair of parallel plate electrodes, high-frequency power supply that applies a high-frequency voltage to the pair of parallel plate electrodes so as to discharge between the pair of parallel plate electrodes, a temperature measurement instrument that measures the temperature of a sample to be heated which is disposed in the pair of parallel plate electrodes, a gas introduction unit that introduces a gas to the pair of parallel plate electrodes, reflection mirrors that surround the pair of parallel plate electrodes, and a control unit that controls the output of the high-frequency power supply. Heating of a gas due to discharge between the pair of parallel plate electrodes is used to thermally treat the sample to be heated.
摘要翻译： 提供一种热处理装置，即使在高温退火SiC的情况下，也能够发挥低的热容量并进行均匀的加热。 热处理装置包括：一对平行板电极，对该平行板电极施加高频电压以在一对平行板电极之间放电的高频电源;测量 设置在一对平行板电极中的待加热样品的温度，将气体引入到一对平行板电极中的气体引入单元，围绕该对平行板电极的反射镜，以及控制单元， 控制高频电源的输出。 使用由一对平行板电极之间的放电引起的气体的加热来热处理待加热的样品。
-
公开(公告)号：US20130087285A1
公开(公告)日：2013-04-11
申请号：US13592129
申请日：2012-08-22
CPC分类号： H01J37/32165 , H01J37/32082 , H01J37/3211 , H01J37/32192 , H01J37/32302 , H01J37/32449 , H01J2237/006 , H01J2237/3341
摘要： A plasma etching apparatus of an electrodeless system can uniformize a radical density, and improve the uniformity of etching. The plasma etching apparatus of the electrodeless system includes a decompression chamber, a gas supply mechanism, a dielectric window, a plasma generation unit, a stage on which a sample is placed, and a first RF power supply connected to the stage. The plasma etching apparatus further includes a gas introduction mechanism for supplying a second gas, and a second RF power supply for inputting a RF power that allows radicals to be generated in an outer periphery of the sample.
摘要翻译： 无电极系统的等离子体蚀刻装置可以使自由基密度均匀化，并提高蚀刻的均匀性。 无电极系统的等离子体蚀刻装置包括减压室，气体供给机构，电介质窗，等离子体产生单元，放置样品的台和连接到载物台的第一RF电源。 等离子体蚀刻装置还包括用于供应第二气体的气体引入机构和用于输入允许在样品的外周产生自由基的RF功率的第二RF电源。
-
公开(公告)号：US20130277354A1
公开(公告)日：2013-10-24
申请号：US13571730
申请日：2012-08-10
IPC分类号： H05H1/48
CPC分类号： H01J37/32522 , H01J37/32724
摘要： There is provided a method for plasma heat treatment that can suppress the degradation of thermal efficiency even in the case where plasma is used to heat a sample at a temperature of 1,200° C. or more. In a method for plasma heat treatment that a sample to be processed is heated by plasma, the method including the steps of: preheating in which a heat treatment chamber is exhausted while preheating an upper electrode and a lower electrode using plasma generated between the upper electrode and the lower electrode; and heat treatment in which the sample to be processed is heated after the preheating step. The upper electrode and the lower electrode are electrodes containing carbon.
摘要翻译： 提供了即使在1200℃以上的温度下使用等离子体加热试样的情况下也能够抑制热效率降低的等离子体热处理方法。 在等离子体热处理的方法中，待加工的样品被等离子体加热，所述方法包括以下步骤：使用在上电极和下电极之间产生的等离子体预热上热电极和下电极的热处理室被排出的预热 和下电极; 以及在预热步骤之后加热被处理样品的热处理。 上电极和下电极是含有碳的电极。
-
公开(公告)号：US20120055915A1
公开(公告)日：2012-03-08
申请号：US12955020
申请日：2010-11-29
CPC分类号： H05B7/18
摘要： Provided is a heat treatment apparatus that even when annealing SiC at high temperature, can exhibit a low heat capacity and perform uniform heating. The heat treatment apparatus includes a pair of parallel plate electrodes, high-frequency power supply that applies a high-frequency voltage to the pair of parallel plate electrodes so as to discharge between the pair of parallel plate electrodes, a temperature measurement instrument that measures the temperature of a sample to be heated which is disposed in the pair of parallel plate electrodes, a gas introduction unit that introduces a gas to the pair of parallel plate electrodes, reflection mirrors that surround the pair of parallel plate electrodes, and a control unit that controls the output of the high-frequency power supply. Heating of a gas due to discharge between the pair of parallel plate electrodes is used to thermally treat the sample to be heated.
摘要翻译： 提供一种热处理装置，即使在高温退火SiC的情况下，也能够发挥低的热容量并进行均匀的加热。 热处理装置包括：一对平行板电极，对该平行板电极施加高频电压以在一对平行板电极之间放电的高频电源;测量 设置在一对平行板电极中的待加热样品的温度，将气体引入到一对平行板电极中的气体引入单元，围绕该对平行板电极的反射镜，以及控制单元， 控制高频电源的输出。 使用由一对平行板电极之间的放电引起的气体的加热来热处理待加热的样品。
-
公开(公告)号：US07842619B2
公开(公告)日：2010-11-30
申请号：US12202692
申请日：2008-09-02
申请人： Masatoshi Miyake , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
发明人： Masatoshi Miyake , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： H01L21/00
CPC分类号： H01L21/31138 , H01J37/321 , H01J37/32165 , H01J37/3244 , H01J37/32449 , H01L21/31116 , Y10S438/905
摘要： A plasma processing method includes etching an insulating film of a sample to be processed using plasma generated from etching gas, supplying a large flow of inert gas from above the sample while having the sample mounted on a sample mounting stage, supplying deposit removal gas to only an area near a side wall of a processing chamber, and controlling a plasma density distribution to thereby vary a plasma density at a center area of the processing chamber and a plasma density at an area near the side wall of the processing chamber so as to perform a deposited film removing process for removing the film deposited on the side wall of the processing chamber.
摘要翻译： 等离子体处理方法包括使用蚀刻气体产生的等离子体对待处理样品的绝缘膜进行蚀刻，同时将样品安装在样品安装台上，从样品安装台提供大量惰性气体，仅向其提供沉积物去除气体 处理室的侧壁附近的区域，并且控制等离子体密度分布，从而改变处理室的中心区域处的等离子体密度和处理室侧壁附近的等离子体密度，以便执行 用于去除沉积在处理室的侧壁上的膜的沉积膜去除工艺。
-
-
-
-
-
-
-
-
-
搜索结果
25 条记录 (耗时 0.013 秒)