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    Steel for steel tube with excellent sulfide stress cracking resistance
    3.
    发明授权
    Steel for steel tube with excellent sulfide stress cracking resistance 有权
    钢管用于钢管，具有优良的耐硫化物应力开裂性能

    公开(公告)号：US09175371B2

    公开(公告)日：2015-11-03

    申请号：US13702763

    申请日：2011-05-25

    申请人： Mitsuhiro Numata ,  Tomohiko Omura ,  Masayuki Morimoto ,  Toru Takayama ,  Atsushi Soma

    发明人： Mitsuhiro Numata ,  Tomohiko Omura ,  Masayuki Morimoto ,  Toru Takayama ,  Atsushi Soma

    IPC分类号： C22C38/28 ,  C22C38/22 ,  C22C38/32 ,  C22C38/00 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C22C38/24 ,  C22C38/26 ,  C21D8/02

    CPC分类号： C22C38/32 ,  C21D8/0247 ,  C22C38/001 ,  C22C38/002 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C22C38/22 ,  C22C38/24 ,  C22C38/26 ,  C22C38/28

    摘要： The present invention provides a steel which simultaneously satisfies a plurality of characteristics, specifically, a steel for tubes with excellent sulfide stress cracking resistance, including, C: 0.2 to 0.7%; Si: 0.01 to 0.8%; Mn: 0.1 to 1.5%; S: not more than 0.005%; P: not more than 0.03%; Al: 0.0005 to 0.1%; Ti: 0.005 to 0.05%; Ca: 0.0004 to 0.005%; N: not more than 0.007%; Cr: 0.1 to 1.5%; and Mo: 0.2 to 1.0%; the balance being Fe, Mg and impurities, being characterized in that: the content of Mg is not less than 1.0 ppm and not more than 5.0 ppm; and inclusions of not less than 50% of the total number of those in steel have such a morphology that Mg—Al—O-based oxides exist at the central part of the inclusion, Ca—Al-based oxides enclose the Mg—Al—O-based oxides, and Ti-containing-carbonitrides further exist on a periphery of the Ca—Al-based oxides.

    摘要翻译： 本发明提供一种同时满足多种特性的钢，具体地说，具有优异的耐硫化物应力开裂性的钢，其包括C：0.2〜0.7％， Si：0.01〜0.8％ Mn：0.1〜1.5％ S：不超过0.005％; P：不大于0.03％; Al：0.0005〜0.1％ Ti：0.005〜0.05％ Ca：0.0004〜0.005％ N：不大于0.007％; Cr：0.1〜1.5％ 和Mo：0.2〜1.0％ 余量为Fe，Mg和杂质，其特征在于：Mg的含量不小于1.0ppm且不大于5.0ppm; 并且不少于钢总数的50％的夹杂物具有在夹杂物的中心部存在Mg-Al-O系氧化物的形态，Ca-Al系氧化物包围Mg-Al- O型氧化物和含Ti的碳氮化物进一步存在于Ca-Al系氧化物的周围。

    STEEL FOR STEEL TUBE WITH EXCELLENT SULFIDE STRESS CRACKING RESISTANCE
    4.
    发明申请
    STEEL FOR STEEL TUBE WITH EXCELLENT SULFIDE STRESS CRACKING RESISTANCE 有权
    具有优异的耐硫裂纹耐腐蚀性的钢管钢

    公开(公告)号：US20130084205A1

    公开(公告)日：2013-04-04

    申请号：US13702763

    申请日：2011-05-25

    申请人： Mitsuhiro Numata ,  Tomohiko Omura ,  Masayuki Morimoto ,  Toru Takayama ,  Atsushi Soma

    发明人： Mitsuhiro Numata ,  Tomohiko Omura ,  Masayuki Morimoto ,  Toru Takayama ,  Atsushi Soma

    IPC分类号： C22C38/32 ,  C22C38/28 ,  C22C38/24 ,  C22C38/26 ,  C22C38/02 ,  C22C38/22

    CPC分类号： C22C38/32 ,  C21D8/0247 ,  C22C38/001 ,  C22C38/002 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C22C38/22 ,  C22C38/24 ,  C22C38/26 ,  C22C38/28

    摘要： The present invention provides a steel which simultaneously satisfies a plurality of characteristics, specifically, a steel for tubes with excellent sulfide stress cracking resistance, including, C: 0.2 to 0.7%; Si: 0.01 to 0.8%; Mn: 0.1 to 1.5%; S: not more than 0.005%; P: not more than 0.03%; Al: 0.0005 to 0.1%; Ti: 0.005 to 0.05%; Ca: 0.0004 to 0.005%; N: not more than 0.007%; Cr: 0. 1 to 1.5%; and Mo: 0.2 to 1.0%; the balance being Fe, Mg and impurities, being characterized in that: the content of Mg is not less than 1.0 ppm and not more than 5.0 ppm; and inclusions of not less than 50% of the total number of those in steel have such a morphology that Mg—Al—O-based oxides exist at the central part of the inclusion, Ca—Al-based oxides enclose the Mg—Al—O-based oxides, and Ti-containing-carbonitrides further exist on a periphery of the Ca—Al-based oxides.

    摘要翻译： 本发明提供一种同时满足多种特性的钢，具体地说，具有优异的耐硫化物应力开裂性的钢，其包括C：0.2〜0.7％， Si：0.01〜0.8％ Mn：0.1〜1.5％ S：不超过0.005％; P：不大于0.03％; Al：0.0005〜0.1％ Ti：0.005〜0.05％ Ca：0.0004〜0.005％ N：不大于0.007％; Cr：0.1〜1.5％ 和Mo：0.2〜1.0％ 余量为Fe，Mg和杂质，其特征在于：Mg的含量不小于1.0ppm且不大于5.0ppm; 并且不少于钢总数的50％的夹杂物具有在夹杂物的中心部存在Mg-Al-O系氧化物的形态，Ca-Al系氧化物包围Mg-Al- O型氧化物和含Ti的碳氮化物进一步存在于Ca-Al系氧化物的周围。

    Method for manufacturing semiconductor device including layer containing yttria-stabilized zirconia
    5.
    发明授权
    Method for manufacturing semiconductor device including layer containing yttria-stabilized zirconia 有权
    包含氧化钇稳定氧化锆层的半导体器件的制造方法

    公开(公告)号：US08951849B2

    公开(公告)日：2015-02-10

    申请号：US13050002

    申请日：2011-03-17

    申请人： Toru Takayama ,  Kengo Akimoto

    发明人： Toru Takayama ,  Kengo Akimoto

    IPC分类号： H01L35/24 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/3205 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786 ,  H01L29/417

    CPC分类号： H01L21/3105 ,  H01L21/31604 ,  H01L21/32055 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78696

    摘要： An object is to provide a semiconductor device including a microcrystalline semiconductor film with favorable quality and a method for manufacturing the semiconductor device. In a thin film transistor formed using a microcrystalline semiconductor film, yttria-stabilized zirconia having a fluorite structure is formed in the uppermost layer of a gate insulating film in order to improve quality of a microcrystalline semiconductor film to be formed in the initial stage of deposition. The microcrystalline semiconductor film is deposited on the yttria-stabilized zirconia, so that the microcrystalline semiconductor film around an interface with a base particularly has favorable crystallinity while by crystallinity of the base.

    摘要翻译： 目的在于提供一种具有质量好的微晶半导体膜的半导体装置及其制造方法。 在使用微晶半导体膜形成的薄膜晶体管中，在栅极绝缘膜的最上层形成具有萤石结构的氧化钇稳定的氧化锆，以提高在初始沉积时形成的微晶半导体膜的质量 。 微晶半导体膜沉积在氧化钇稳定的氧化锆上，使得与碱的界面周围的微晶半导体膜特别具有良好的结晶度，同时通过碱的结晶度。

    Semiconductor device
    6.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08841664B2

    公开(公告)日：2014-09-23

    申请号：US13404516

    申请日：2012-02-24

    申请人： Hitomi Sato ,  Takayuki Saito ,  Kosei Noda ,  Toru Takayama

    发明人： Hitomi Sato ,  Takayuki Saito ,  Kosei Noda ,  Toru Takayama

    IPC分类号： H01L29/10 ,  H01L29/786 ,  H01L27/108 ,  H01L29/49 ,  H01L27/115

    CPC分类号： H01L29/7869 ,  H01L27/10873 ,  H01L27/1156 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/78606

    摘要： Provided is a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which a semiconductor film whose threshold voltage is difficult to control is used as an active layer. By using a silicon oxide film having a negative fixed charge as a film in contact with the active layer of the transistor or a film in the vicinity of the active layer, a negative electric field is always applied to the active layer due to the negative fixed charge and the threshold voltage of the transistor can be shifted in the positive direction. Thus, the highly reliable semiconductor device can be manufactured by giving stable electric characteristics to the transistor.

    摘要翻译： 提供了一种高可靠性的半导体器件，其通过对其中阈值电压难以控制的半导体膜用作有源层的晶体管给予稳定的电特性。 通过使用具有负固定电荷的氧化硅膜作为与晶体管的有源层或有源层附近的膜接触的膜，由于负固定，总是向有源层施加负电场 电荷和晶体管的阈值电压可以向正方向移动。 因此，可以通过给晶体管提供稳定的电特性来制造高度可靠的半导体器件。

    Method of manufacturing semiconductor device
    8.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08673739B2

    公开(公告)日：2014-03-18

    申请号：US13303519

    申请日：2011-11-23

    申请人： Toru Takayama ,  Yuugo Goto ,  Yumiko Fukumoto ,  Junya Maruyama ,  Takuya Tsurume

    发明人： Toru Takayama ,  Yuugo Goto ,  Yumiko Fukumoto ,  Junya Maruyama ,  Takuya Tsurume

    IPC分类号： H01L21/30

    CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L33/0079

    摘要： It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of impurities such as moisture that deteriorate element characteristics, and a method of manufacturing thereof. A protective film having superior gas barrier properties (which is a protective film that is likely to damage an element if the protective film is formed on the element directly) is previously formed on a heat-resistant substrate other than a substrate with the element formed thereon. The protective film is peeled off from the heat-resistant substrate, and transferred over the substrate with the element formed thereon so as to seal the element.

    摘要翻译： 本发明的目的是提供一种具有高度可靠的密封结构的轻质半导体器件及其制造方法，该密封结构能够防止元素特性恶化的诸如水分等杂质的侵入。 具有优异阻气性的保护膜（其是如果在元件上直接形成保护膜时可能损坏元件的保护膜）预先在其上形成有元件的基板之外的耐热基板上形成 。 保护膜从耐热基材上剥离，并在其上形成的元件在基板上转印以密封元件。

    Liquid crystal display device and method for manufacturing the same
    9.
    发明授权
    Liquid crystal display device and method for manufacturing the same 有权
    液晶显示装置及其制造方法

    公开(公告)号：US08634050B2

    公开(公告)日：2014-01-21

    申请号：US12108614

    申请日：2008-04-24

    申请人： Shunpei Yamazaki ,  Toru Takayama

    发明人： Shunpei Yamazaki ,  Toru Takayama

    IPC分类号： G02F1/1339

    CPC分类号： G02F1/1339 ,  G02F1/1341 ,  G02F2001/13415

    摘要： A liquid crystal display device using a plastic substrate becomes required to have high resolution, high opening ratio, high reliability, or the like, with the increasing of a screen size. Besides, high productivity and cost reduction is also required. According to the present invention, a protective film 123 comprising at least one silicon nitride film, which is formed by a ratio frequency sputtering using a silicon target, is provided over an opposing substrate (a flexible substrate); sealant 112 is drawn; a liquid crystal material 114 is dropped over the opposing substrate in vacuo; and the opposing substrate is pasted to a flexible substrate 110 provided with a pixel electrode 111 and a columnar spacer 115.

    摘要翻译： 随着屏幕尺寸的增加，使用塑料基板的液晶显示装置需要具有高分辨率，高开口率，高可靠性等。 此外，还需要高生产率和成本降低。 根据本发明，在相对的基板（柔性基板）上设置包括通过使用硅靶的比率频率溅射形成的至少一个氮化硅膜的保护膜123。 抽出密封剂112; 将液晶材料114真空滴在相对的基板上; 并且将相对的基板粘贴到设置有像素电极111和柱状间隔物115的柔性基板110上。