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公开(公告)号：US07312468B2
公开(公告)日：2007-12-25
申请号：US10535175
申请日：2003-11-12
IPC分类号： H01L29/06 , H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336 , H01L33/00
CPC分类号： B82Y20/00 , H01S5/305 , H01S5/3086 , H01S5/34333
摘要： The semiconductor light-emitting element uses a compound semiconductor quantum well structure comprising a well layer, and barrier layers between which the well layer is sandwiched, as an active layer. In the adjacent well layer and barrier layers of the semiconductor light-emitting element, the well layer has in part a doped well region to which an n-type impurity is added at the interface with the barrier layer on the electron injection side, and in the vicinity of this interface, and the barrier layer has a doped barrier region to which the n-type impurity is added at least at the interface and in the vicinity of this interface.
摘要翻译： 半导体发光元件使用包括阱层的化合物半导体量子阱结构和夹在阱层之间的阻挡层作为有源层。 在半导体发光元件的相邻的阱层和阻挡层中，阱层部分地具有与电子注入侧的势垒层的界面处添加n型杂质的掺杂阱区域，在 该界面附近，势垒层具有至少在界面处和界面附近添加n型杂质的掺杂阻挡区域。
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公开(公告)号：US20060027814A1
公开(公告)日：2006-02-09
申请号：US10535175
申请日：2003-11-12
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , H01S5/305 , H01S5/3086 , H01S5/34333
摘要： The semiconductor light-emitting element uses a compound semiconductor quantum well structure comprising a well layer, and barrier layers between which the well layer is sandwiched, as an active layer. In the adjacent well layer and barrier layers of the semiconductor light-emitting element, the well layer has in part a doped well region to which an n-type impurity is added at the interface with the barrier layer on the electron injection side, and in the vicinity of this interface, and the barrier layer has a doped barrier region to which the n-type impurity is added at least at the interface and in the vicinity of this interface.
摘要翻译： 半导体发光元件使用包括阱层的化合物半导体量子阱结构和夹在阱层之间的阻挡层作为有源层。 在半导体发光元件的相邻的阱层和阻挡层中，阱层部分具有与电子注入侧的势垒层的界面处添加n型杂质的掺杂阱区域， 该界面附近，势垒层具有至少在界面处和界面附近添加n型杂质的掺杂阻挡区域。
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3.发明授权Group III nitride compound semiconductor laser and manufacturing method thereof 失效III族氮化物半导体激光器及其制造方法公开(公告)号：US06795471B2
公开(公告)日：2004-09-21
申请号：US10117095
申请日：2002-04-08
申请人： Atsushi Watanabe , Yoshinori Kimura , Hiroyuki Ota , Toshiyuki Tanaka , Hirokazu Takahashi , Mamoru Miyachi , Atsuya Ito
发明人： Atsushi Watanabe , Yoshinori Kimura , Hiroyuki Ota , Toshiyuki Tanaka , Hirokazu Takahashi , Mamoru Miyachi , Atsuya Ito
IPC分类号： H01S500
CPC分类号： H01S5/32341 , H01S5/0213 , H01S5/0224 , H01S5/221 , H01S5/2216 , H01S5/222 , H01S5/2222 , H01S2301/18 , H01S2304/00
摘要： A nitride compound semiconductor laser, of which driving voltage is low and transverse mode of light is stable, having a plurality of crystal layers made of a group III nitride compound semiconductor expressed by the formula (AlGa1-x)1-yInyN (0≦x≦1, 0≦y≦1). The layers include an active layer-side guide layer which is adjacent to an active layer in the crystal layers of the group III nitride compound semiconductor and made of Alx′Ga1-x′-y′Iny′N (0≦x′≦1, 0≦y′≦1), a current constricting AlN layer deposited on said guide layer and having a stripe-shape aperture, an electrode-side guide layer made of Alx″Ga1-x″-y″Iny″N (0≦x″≦1, 0≦y″≦1) and deposited filling the aperture of the current constricting layer, and a clad layer made of AluGa1-u-vInvN (0≦u≦1, 0≦v≦1) and deposited on the electrode-side guide layer.
摘要翻译： 驱动电压低且横向模式稳定的氮化物化合物半导体激光器具有由式（AlGa1-x）1-yInyN（0≤...）表示的由III族氮化物化合物半导体构成的多个晶体层， x <= 1，0 <= y <= 1）。 这些层包括与III族氮化物化合物半导体的晶体层中的有源层相邻的有源层侧引导层，由Al x Ga 1-x'-y'In y'N（0 <= x' = 1,0 <= y'<= 1），沉积在所述引导层上并具有条形孔的电流收缩AlN层，由Al x''Ga 1-x“y”形成的电极侧引导层， “Iny''N（0 <= x”<= 1,0,0 <= y“<= 1），并填充电流收缩层的孔径，以及由AluGa1-u-vInvN（0 <= u <= 1，0 <= v <= 1）并沉积在电极侧引导层上。
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公开(公告)号：US20130090564A1
公开(公告)日：2013-04-11
申请号：US13805262
申请日：2010-06-24
申请人： Kiyoshi Tateishi , Atsuya Ito , Yoshinori Kimura
发明人： Kiyoshi Tateishi , Atsuya Ito , Yoshinori Kimura
IPC分类号： A61B5/026
摘要： A light detecting apparatus includes: a first photoelectric conversion element unit (110) and a second photoelectric conversion element unit(120) each of which converts input light to an electric current and output it; an optical current transducer unit (100) for outputting, as a detected current, a differential current between an electric current outputted by the first photoelectric conversion element unit and an electric current outputted by the second photoelectric conversion element unit; and a first current/voltage converting unit (200) for amplifying the detected current outputted from the optical current transducer unit, converting it to a voltage signal, and outputting the voltage signal.
摘要翻译： 光检测装置包括：将输入光转换为电流并输出的第一光电转换元件单元（110）和第二光电转换元件单元（120） 用于输出由第一光电转换元件单元输出的电流与由第二光电转换元件单元输出的电流之间的差分电流作为检测电流的光电流传感器单元; 以及用于放大从光电流传感器单元输出的检测电流的第一电流/电压转换单元（200），将其转换为电压信号，并输出电压信号。
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公开(公告)号：US09237856B2
公开(公告)日：2016-01-19
申请号：US13805262
申请日：2010-06-24
申请人： Kiyoshi Tateishi , Atsuya Ito , Yoshinori Kimura
发明人： Kiyoshi Tateishi , Atsuya Ito , Yoshinori Kimura
摘要： A light detecting apparatus includes: a first photoelectric conversion element unit (110) and a second photoelectric conversion element unit (120) each of which converts input light to an electric current and output it; an optical current transducer unit (100) for outputting, as a detected current, a differential current between an electric current outputted by the first photoelectric conversion element unit and an electric current outputted by the second photoelectric conversion element unit; and a first current/voltage converting unit (200) for amplifying the detected current outputted from the optical current transducer unit, converting it to a voltage signal, and outputting the voltage signal.
摘要翻译： 光检测装置包括：将输入光转换为电流并输出的第一光电转换元件单元（110）和第二光电转换元件单元（120） 用于输出由第一光电转换元件单元输出的电流与由第二光电转换元件单元输出的电流之间的差分电流作为检测电流的光电流传感器单元; 以及用于放大从光电流传感器单元输出的检测电流的第一电流/电压转换单元（200），将其转换为电压信号，并输出电压信号。
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公开(公告)号：US20150080673A1
公开(公告)日：2015-03-19
申请号：US14394921
申请日：2012-04-20
CPC分类号： A61B5/021 , A61B5/026 , A61B5/0261 , A61B5/7221 , A61B5/7278
摘要： A blood pressure estimation apparatus (1) is provided with: a blood pressure measuring device (11) which measures a blood pressure (BPm) of a living body every first period; a blood flow measuring device (12) which measures a blood flow volume (BF) of the living body every second period which is shorter than the first period; and a blood pressure estimating device (13) which estimates the blood pressure (BPc) every third period which is shorter than the first period, on the basis of the blood pressure which is measured by the blood pressure measuring device and the blood flow volume which is measured by the blood flow measuring device.
摘要翻译： 血压估计装置（1）具备：测量第一期间的生物体的血压（BPm）的血压测定装置（11） 血流计测装置，其每隔第一期间比第一期间短的情况下测量生物体的血流量（BF）; 和血压估计装置（13），其基于由血压测定装置测定的血压和血液流量来估计比第一期间短的第三期间的血压（BPc）， 由血流测量装置测量。
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公开(公告)号：US20080170003A1
公开(公告)日：2008-07-17
申请号：US11987174
申请日：2007-11-28
申请人： Atsuya Ito , Yasuhiro Torisaki , Tetsuya Matsumoto
发明人： Atsuya Ito , Yasuhiro Torisaki , Tetsuya Matsumoto
IPC分类号： G09G3/28
CPC分类号： H01J11/26 , H01J11/12 , H01J11/24 , H01J2211/245 , H01J2211/265 , H01J2211/323
摘要： The areas of the transparent electrodes of the row electrodes constituting each row electrode pair facing the required discharge cells vary in accordance with the positions of the corresponding discharge cells within the panel screen. Required column electrodes of a plurality of column electrodes, which are provided for allowing an opposing discharge to be initiated across the discharge space between the column electrode and a row electrode of each row electrode pair in each discharge cell of the PDP, have portions facing the transparent electrodes of the row electrodes and provided with widened portions. The areas of the widened portions vary in accordance with the positions of the corresponding discharge cells within the panel screen.
摘要翻译： 构成面对所需放电单元的各行电极对的行电极的透明电极的面积根据面板屏幕内的相应放电单元的位置而变化。 多个列电极的所需列电极，其设置用于允许在PDP的每个放电单元中的列电极对和列电极对的列电极之间的放电空间之间引起相反放电，具有面向 行电极的透明电极并且设置有加宽部分。 加宽部分的面积根据面板屏幕内相应的放电单元的位置而变化。
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