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1.发明授权Group III nitride compound semiconductor laser and manufacturing method thereof 失效III族氮化物半导体激光器及其制造方法公开(公告)号：US06795471B2
公开(公告)日：2004-09-21
申请号：US10117095
申请日：2002-04-08
申请人： Atsushi Watanabe , Yoshinori Kimura , Hiroyuki Ota , Toshiyuki Tanaka , Hirokazu Takahashi , Mamoru Miyachi , Atsuya Ito
发明人： Atsushi Watanabe , Yoshinori Kimura , Hiroyuki Ota , Toshiyuki Tanaka , Hirokazu Takahashi , Mamoru Miyachi , Atsuya Ito
IPC分类号： H01S500
CPC分类号： H01S5/32341 , H01S5/0213 , H01S5/0224 , H01S5/221 , H01S5/2216 , H01S5/222 , H01S5/2222 , H01S2301/18 , H01S2304/00
摘要： A nitride compound semiconductor laser, of which driving voltage is low and transverse mode of light is stable, having a plurality of crystal layers made of a group III nitride compound semiconductor expressed by the formula (AlGa1-x)1-yInyN (0≦x≦1, 0≦y≦1). The layers include an active layer-side guide layer which is adjacent to an active layer in the crystal layers of the group III nitride compound semiconductor and made of Alx′Ga1-x′-y′Iny′N (0≦x′≦1, 0≦y′≦1), a current constricting AlN layer deposited on said guide layer and having a stripe-shape aperture, an electrode-side guide layer made of Alx″Ga1-x″-y″Iny″N (0≦x″≦1, 0≦y″≦1) and deposited filling the aperture of the current constricting layer, and a clad layer made of AluGa1-u-vInvN (0≦u≦1, 0≦v≦1) and deposited on the electrode-side guide layer.
摘要翻译： 驱动电压低且横向模式稳定的氮化物化合物半导体激光器具有由式（AlGa1-x）1-yInyN（0≤...）表示的由III族氮化物化合物半导体构成的多个晶体层， x <= 1，0 <= y <= 1）。 这些层包括与III族氮化物化合物半导体的晶体层中的有源层相邻的有源层侧引导层，由Al x Ga 1-x'-y'In y'N（0 <= x' = 1,0 <= y'<= 1），沉积在所述引导层上并具有条形孔的电流收缩AlN层，由Al x''Ga 1-x“y”形成的电极侧引导层， “Iny''N（0 <= x”<= 1,0,0 <= y“<= 1），并填充电流收缩层的孔径，以及由AluGa1-u-vInvN（0 <= u <= 1，0 <= v <= 1）并沉积在电极侧引导层上。
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2.发明授权
公开(公告)号：US5834326A
公开(公告)日：1998-11-10
申请号：US763779
申请日：1996-12-11
申请人： Mamoru Miyachi , Toshiyuki Tanaka , Yoshinori Kimura , Hirokazu Takahashi , Hitoshi Sato , Atsushi Watanabe , Hiroyuki Ota , Isamu Akasaki , Hiroshi Amano
发明人： Mamoru Miyachi , Toshiyuki Tanaka , Yoshinori Kimura , Hirokazu Takahashi , Hitoshi Sato , Atsushi Watanabe , Hiroyuki Ota , Isamu Akasaki , Hiroshi Amano
CPC分类号： H01L33/32 , H01L33/007 , H01L33/325 , Y10S148/065 , Y10S148/113
摘要： A process for producing a semiconductor emitting device of group III nitride semiconductor having a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) includes; a step of forming at least one pn-junction or pin-junction and a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) to which a group II element is added; and a step of forming electrodes on the crystal layer. The process further includes an electric-field-assisted annealing treatment in which the pn-junction or pin-junction is heated to the predetermined temperature range while forming and maintaining an electric field across the pn-junction or pin-junction for at least partial time period of the predetermined temperature range via the electrodes.
摘要翻译： 一种用于制造半导体具有晶体层（的AlxGa1-x）的1-yInyN（0
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公开(公告)号：US20060027814A1
公开(公告)日：2006-02-09
申请号：US10535175
申请日：2003-11-12
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , H01S5/305 , H01S5/3086 , H01S5/34333
摘要： The semiconductor light-emitting element uses a compound semiconductor quantum well structure comprising a well layer, and barrier layers between which the well layer is sandwiched, as an active layer. In the adjacent well layer and barrier layers of the semiconductor light-emitting element, the well layer has in part a doped well region to which an n-type impurity is added at the interface with the barrier layer on the electron injection side, and in the vicinity of this interface, and the barrier layer has a doped barrier region to which the n-type impurity is added at least at the interface and in the vicinity of this interface.
摘要翻译： 半导体发光元件使用包括阱层的化合物半导体量子阱结构和夹在阱层之间的阻挡层作为有源层。 在半导体发光元件的相邻的阱层和阻挡层中，阱层部分具有与电子注入侧的势垒层的界面处添加n型杂质的掺杂阱区域， 该界面附近，势垒层具有至少在界面处和界面附近添加n型杂质的掺杂阻挡区域。
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公开(公告)号：US07312468B2
公开(公告)日：2007-12-25
申请号：US10535175
申请日：2003-11-12
IPC分类号： H01L29/06 , H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336 , H01L33/00
CPC分类号： B82Y20/00 , H01S5/305 , H01S5/3086 , H01S5/34333
摘要： The semiconductor light-emitting element uses a compound semiconductor quantum well structure comprising a well layer, and barrier layers between which the well layer is sandwiched, as an active layer. In the adjacent well layer and barrier layers of the semiconductor light-emitting element, the well layer has in part a doped well region to which an n-type impurity is added at the interface with the barrier layer on the electron injection side, and in the vicinity of this interface, and the barrier layer has a doped barrier region to which the n-type impurity is added at least at the interface and in the vicinity of this interface.
摘要翻译： 半导体发光元件使用包括阱层的化合物半导体量子阱结构和夹在阱层之间的阻挡层作为有源层。 在半导体发光元件的相邻的阱层和阻挡层中，阱层部分地具有与电子注入侧的势垒层的界面处添加n型杂质的掺杂阱区域，在 该界面附近，势垒层具有至少在界面处和界面附近添加n型杂质的掺杂阻挡区域。
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公开(公告)号：US07079563B2
公开(公告)日：2006-07-18
申请号：US10743944
申请日：2003-12-24
IPC分类号： H01S5/00
CPC分类号： H01S5/32341 , H01L2224/48463 , H01S5/0202 , H01S5/0217 , H01S5/0224 , H01S5/02272 , H01S5/0425 , H01S5/22 , H01S5/4043 , H01S5/4087
摘要： An improved semiconductor laser device is provided which has a small distance between laser light emitting spots. Such laser device comprises i) a first light emitting element including a laser oscillation section provided with a ridge waveguide and formed by forming a group-III nitride semiconductor film on a substrate, an insulating layer and an ohmic electrode layer, ii) a second light emitting element including a laser oscillation section provided with a waveguide and formed by forming III–V compound semiconductor film, an insulating layer and an ohmic electrode layer. By virtue of the adhesive metal layer interposed between the two ohmic electrode layers, the two laser oscillation sections are combined together, thereby forming the improved semiconductor laser device which has a small distance between laser light emitting spots of the two laser oscillation sections.
摘要翻译： 提供了一种在激光发光点之间具有小距离的改进的半导体激光器件。 这种激光装置包括：i）第一发光元件，其包括设置有脊波导的激光振荡部，并且通过在基板上形成III族氮化物半导体膜，形成绝缘层和欧姆电极层，ii）第二光 包括设置有波导并通过形成III-V化合物半导体膜，绝缘层和欧姆电极层形成的激光振荡部的发光元件。 通过插入在两个欧姆电极层之间的粘合金属层，将两个激光振荡部分组合在一起，从而形成在两个激光振荡部分的激光发光点之间具有小距离的改进的半导体激光器装置。
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公开(公告)号：US07098063B2
公开(公告)日：2006-08-29
申请号：US10743542
申请日：2003-12-23
IPC分类号： H01L21/00
CPC分类号： B82Y20/00 , G11B7/1275 , G11B2007/0006 , H01L2224/48463 , H01S5/0202 , H01S5/0207 , H01S5/0213 , H01S5/0217 , H01S5/0224 , H01S5/02272 , H01S5/02461 , H01S5/0421 , H01S5/0425 , H01S5/2214 , H01S5/2231 , H01S5/32325 , H01S5/32341 , H01S5/34326 , H01S5/34333 , H01S5/4043 , H01S5/4087 , H01S2301/173 , H01S2304/04
摘要： A semiconductor laser device comprises: a first light-emitting element having a first laser part, an insulating layer, and an ohmic electrode layer; and a second light-emitting element having a second laser part, an insulating layer, and an ohmic electrode layer. The first laser part has a ridge waveguide, and is formed by stacking thin films of group-III nitride compound semiconductors (for example, GaN-based semiconductors). The second laser part has a ridge waveguide, and is formed by stacking thin films of group III–V compound semiconductors (such as GaAs). The first laser part and the second laser part are integrally bonded to each other by the interposition of an adhesive metal layer which is formed between the ohmic electrode layers. This provides the semiconductor laser device with a small distance between the light-emitting spots of the laser parts.
摘要翻译： 半导体激光器件包括：具有第一激光器部分，绝缘层和欧姆电极层的第一发光元件; 以及具有第二激光部分，绝缘层和欧姆电极层的第二发光元件。 第一激光器部分具有脊形波导，并且通过堆叠III族氮化物化合物半导体（例如，GaN基半导体）的薄膜形成。 第二激光器部分具有脊形波导，并且通过堆叠III-V族化合物半导体（诸如GaAs）的薄膜形成。 第一激光部分和第二激光部分通过插入形成在欧姆电极层之间的粘合金属层而彼此一体地接合。 这为半导体激光器件在激光器部件的发光点之间提供了很小的距离。
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7.发明申请Group III nitride semiconductor light-emitting element and method of manufacturing the same 审中-公开III族氮化物半导体发光元件及其制造方法公开(公告)号：US20060081860A1
公开(公告)日：2006-04-20
申请号：US10530322
申请日：2003-09-29
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/02 , H01L33/025 , H01L33/32 , H01S5/3086 , H01S5/309 , H01S2301/173 , H01S2301/18
摘要： A Group III nitride semiconductor light-emitting element includes a crack-preventing layer 15 of n-type GaN provided between a n-type contact layer 4A and a n-type clad layer 5A, wherein the crack-preventing layer 15 has a dopant concentration lower than that of the n-type contact layer 4A.
摘要翻译： III族氮化物半导体发光元件包括设置在n型接触层4A和n型覆盖层5A之间的n型GaN的防裂层15，其中防裂层15具有 掺杂剂浓度低于n型接触层4A的掺杂浓度。
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8.发明授权公开(公告)号：US06329667B1
公开(公告)日：2001-12-11
申请号：US09497695
申请日：2000-02-08
IPC分类号： H01L2906
CPC分类号： H01L33/02 , H01L33/06 , H01L33/32 , H01S5/0207 , H01S5/10 , H01S5/2081 , H01S5/32341
摘要： A nitride semiconductor light emitting device having preferable light emitting characteristics even if dense threading dislocations extend through single crystal layers. The nitride semiconductor light emitting device includes an active layer obtained by depositing group-3 nitride semiconductors, and a barrier layer disposed adjacent to the active layer and having a greater bandgap than that of the active layer, the active layer having barrier portions which surround the threading dislocations and are defined by interfaces enclosing the threading dislocation and which are made of the same material as that of the barrier layer.
摘要翻译： 即使致密的穿透位错延伸穿过单晶层，也具有优选的发光特性的氮化物半导体发光器件。 氮化物半导体发光器件包括通过沉积III族氮化物半导体获得的有源层和与有源层相邻设置并且具有比有源层更大的带隙的势垒层，所述有源层具有包围所述有源层的势垒部分 穿透位错并且由包围穿透位错的界面限定，并且由与阻挡层相同的材料制成。
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9.发明授权公开(公告)号：US06537839B2
公开(公告)日：2003-03-25
申请号：US09987948
申请日：2001-11-16
IPC分类号： H01L2100
CPC分类号： H01L33/02 , H01L33/06 , H01L33/32 , H01S5/0207 , H01S5/10 , H01S5/2081 , H01S5/32341
摘要： A nitride semiconductor light emitting device having preferable light emitting characteristics even if dense threading dislocations extend through single crystal layers. The nitride semiconductor light emitting device includes an active layer obtained by depositing group-3 nitride semiconductors, and a barrier layer disposed adjacent to the active layer and having a greater bandgap than that of the active layer, the active layer having barrier portions which surround the threading dislocations and are defined by interfaces enclosing the threading dislocation and which are made of the same material as that of the barrier layer.
摘要翻译： 氮化物半导体发光器件即使致密的穿透位错延伸穿过单晶层，也具有优选的发光特性。氮化物半导体发光器件包括通过沉积III族氮化物半导体而获得的有源层和与活性物质相邻设置的势垒层 并且具有比有源层的带隙更大的带隙，所述有源层具有围绕穿透位错的阻挡部分，并且由包围穿透位错的界面限定，并且由与阻挡层的材料相同的材料制成。
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公开(公告)号：US10342968B2
公开(公告)日：2019-07-09
申请号：US13995720
申请日：2011-12-21
申请人： Akihiro Hasui , Atsuhiko Shiraishi , Ken-ichi Hattori , Shinji Tanaka , Hirokazu Takahashi , Makoto Takahashi
发明人： Akihiro Hasui , Atsuhiko Shiraishi , Ken-ichi Hattori , Shinji Tanaka , Hirokazu Takahashi , Makoto Takahashi
摘要： The present invention verifies a method of reducing skin irritation (particularly, cumulative skin irritation) caused by transdermal administration of a local anesthetic using iontophoresis, and provides an electrode pad for relief from a puncture pain which is safe not only at single administration but also at repeated administrations. The electrode pad comprises a base sheet; an electrode placed on the base sheet; an adhesive sheet placed on the base sheet and having an opening, within which the electrode being exposed; and a medicament reservoir containing a local anesthetic and placed in the opening of the adhesive sheet while being in contact with the electrode. An inner peripheral surface of the opening of the adhesive sheet and an outer peripheral surface of the medicament reservoir are prevented from coming into contact with human skin while contacting with each other, and thereby skin irritation is reduced.
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