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    Group III nitride compound semiconductor laser and manufacturing method thereof
    1.
    发明授权
    Group III nitride compound semiconductor laser and manufacturing method thereof 失效
    III族氮化物半导体激光器及其制造方法

    公开(公告)号：US06795471B2

    公开(公告)日：2004-09-21

    申请号：US10117095

    申请日：2002-04-08

    申请人： Atsushi Watanabe ,  Yoshinori Kimura ,  Hiroyuki Ota ,  Toshiyuki Tanaka ,  Hirokazu Takahashi ,  Mamoru Miyachi ,  Atsuya Ito

    发明人： Atsushi Watanabe ,  Yoshinori Kimura ,  Hiroyuki Ota ,  Toshiyuki Tanaka ,  Hirokazu Takahashi ,  Mamoru Miyachi ,  Atsuya Ito

    IPC分类号： H01S500

    CPC分类号： H01S5/32341 ,  H01S5/0213 ,  H01S5/0224 ,  H01S5/221 ,  H01S5/2216 ,  H01S5/222 ,  H01S5/2222 ,  H01S2301/18 ,  H01S2304/00

    摘要： A nitride compound semiconductor laser, of which driving voltage is low and transverse mode of light is stable, having a plurality of crystal layers made of a group III nitride compound semiconductor expressed by the formula (AlGa1-x)1-yInyN (0≦x≦1, 0≦y≦1). The layers include an active layer-side guide layer which is adjacent to an active layer in the crystal layers of the group III nitride compound semiconductor and made of Alx′Ga1-x′-y′Iny′N (0≦x′≦1, 0≦y′≦1), a current constricting AlN layer deposited on said guide layer and having a stripe-shape aperture, an electrode-side guide layer made of Alx″Ga1-x″-y″Iny″N (0≦x″≦1, 0≦y″≦1) and deposited filling the aperture of the current constricting layer, and a clad layer made of AluGa1-u-vInvN (0≦u≦1, 0≦v≦1) and deposited on the electrode-side guide layer.

    摘要翻译： 驱动电压低且横向模式稳定的氮化物化合物半导体激光器具有由式（AlGa1-x）1-yInyN（0≤...）表示的由III族氮化物化合物半导体构成的多个晶体层， x <= 1，0 <= y <= 1）。 这些层包括与III族氮化物化合物半导体的晶体层中的有源层相邻的有源层侧引导层，由Al x Ga 1-x'-y'In y'N（0 <= x' = 1,0 <= y'<= 1），沉积在所述引导层上并具有条形孔的电流收缩AlN层，由Al x''Ga 1-x“y”形成的电极侧引导层， “Iny''N（0 <= x”<= 1,0,0 <= y“<= 1），并填充电流收缩层的孔径，以及由AluGa1-u-vInvN（0 <= u <= 1，0 <= v <= 1）并沉积在电极侧引导层上。

    Semiconductor light-emitting element and method of manufacturingthe same
    3.
    发明申请
    Semiconductor light-emitting element and method of manufacturingthe same 失效
    半导体发光元件及其制造方法

    公开(公告)号：US20060027814A1

    公开(公告)日：2006-02-09

    申请号：US10535175

    申请日：2003-11-12

    申请人： Atsushi Watanabe ,  Atsuya Ito ,  Hirokazu Takahashi ,  Yoshinori Kimura ,  Mamoru Miyachi

    发明人： Atsushi Watanabe ,  Atsuya Ito ,  Hirokazu Takahashi ,  Yoshinori Kimura ,  Mamoru Miyachi

    IPC分类号： H01L33/00

    CPC分类号： B82Y20/00 ,  H01S5/305 ,  H01S5/3086 ,  H01S5/34333

    摘要： The semiconductor light-emitting element uses a compound semiconductor quantum well structure comprising a well layer, and barrier layers between which the well layer is sandwiched, as an active layer. In the adjacent well layer and barrier layers of the semiconductor light-emitting element, the well layer has in part a doped well region to which an n-type impurity is added at the interface with the barrier layer on the electron injection side, and in the vicinity of this interface, and the barrier layer has a doped barrier region to which the n-type impurity is added at least at the interface and in the vicinity of this interface.

    摘要翻译： 半导体发光元件使用包括阱层的化合物半导体量子阱结构和夹在阱层之间的阻挡层作为有源层。 在半导体发光元件的相邻的阱层和阻挡层中，阱层部分具有与电子注入侧的势垒层的界面处添加n型杂质的掺杂阱区域， 该界面附近，势垒层具有至少在界面处和界面附近添加n型杂质的掺杂阻挡区域。

    Semiconductor laser device and method of manufacturing the same
    7.
    发明授权
    Semiconductor laser device and method of manufacturing the same 失效
    半导体激光器件及其制造方法

    公开(公告)号：US07079563B2

    公开(公告)日：2006-07-18

    申请号：US10743944

    申请日：2003-12-24

    申请人： Mamoru Miyachi ,  Atsushi Watanabe ,  Hirokazu Takahashi ,  Yoshinori Kimura

    发明人： Mamoru Miyachi ,  Atsushi Watanabe ,  Hirokazu Takahashi ,  Yoshinori Kimura

    IPC分类号： H01S5/00

    CPC分类号： H01S5/32341 ,  H01L2224/48463 ,  H01S5/0202 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/4043 ,  H01S5/4087

    摘要： An improved semiconductor laser device is provided which has a small distance between laser light emitting spots. Such laser device comprises i) a first light emitting element including a laser oscillation section provided with a ridge waveguide and formed by forming a group-III nitride semiconductor film on a substrate, an insulating layer and an ohmic electrode layer, ii) a second light emitting element including a laser oscillation section provided with a waveguide and formed by forming III–V compound semiconductor film, an insulating layer and an ohmic electrode layer. By virtue of the adhesive metal layer interposed between the two ohmic electrode layers, the two laser oscillation sections are combined together, thereby forming the improved semiconductor laser device which has a small distance between laser light emitting spots of the two laser oscillation sections.

    摘要翻译： 提供了一种在激光发光点之间具有小距离的改进的半导体激光器件。 这种激光装置包括：i）第一发光元件，其包括设置有脊波导的激光振荡部，并且通过在基板上形成III族氮化物半导体膜，形成绝缘层和欧姆电极层，ii）第二光 包括设置有波导并通过形成III-V化合物半导体膜，绝缘层和欧姆电极层形成的激光振荡部的发光元件。 通过插入在两个欧姆电极层之间的粘合金属层，将两个激光振荡部分组合在一起，从而形成在两个激光振荡部分的激光发光点之间具有小距离的改进的半导体激光器装置。

    Method of fabricating nitride semiconductor laser
    8.
    发明授权
    Method of fabricating nitride semiconductor laser 有权
    制造氮化物半导体激光器的方法

    公开(公告)号：US06235548B1

    公开(公告)日：2001-05-22

    申请号：US09461035

    申请日：1999-12-15

    申请人： Hiroyuki Ota ,  Yoshinori Kimura ,  Mamoru Miyachi

    发明人： Hiroyuki Ota ,  Yoshinori Kimura ,  Mamoru Miyachi

    IPC分类号： H01L2100

    CPC分类号： H01S5/32341 ,  H01S5/0213 ,  H01S5/3063

    摘要： The disclosure is a method for fabricating a nitride semiconductor laser device of group-III nitride semiconductor having a substrate. The method includes a step of forming a crystal layer made of a group-III nitride semiconductor (AlxGa1-x)1-yInyN (0≦x≦1, 0≦y≦1) having an added group II element over the substrate; a step of heating the crystal layer up to a predetermined temperature in a thermal treatment atmosphere and maintaining the predetermined temperature for a first time period; and a step of introducing a hydrocarbon gas into the thermal treatment atmosphere for at least a partial time period within the first time period. The method further includes a step of irradiating an electromagnetic wave or photons to the crystal layer in the at least a partial time period, wherein the electromagnetic wave or photons have an energy greater than an energy forbidden band width of the group III nitride semiconductor in the crystal layer.

    摘要翻译： 本公开是制造具有基板的III族氮化物半导体的氮化物半导体激光器件的方法。 该方法包括由具有添加的II族元素的III族氮化物半导体（Al x Ga 1-x）1-y In y N（0 <= x <= 1,0 <= y <= 1）形成的晶体层的步骤 基材; 在热处理气氛中将晶体层加热到预定温度并保持第一时间段的预定温度的步骤; 以及在第一时间段内将烃气体引入热处理气氛中至少部分时间段的步骤。 该方法还包括在至少部分时间段内将电磁波或光子照射到晶体层的步骤，其中电磁波或光子的能量大于III族氮化物半导体的能量禁带宽度 晶体层。

    Method for manufacturing a semiconductor device
    9.
    发明授权
    Method for manufacturing a semiconductor device 失效
    半导体器件的制造方法

    公开(公告)号：US06207469B1

    公开(公告)日：2001-03-27

    申请号：US09177805

    申请日：1998-10-23

    申请人： Hiroyuki Ota ,  Yoshinori Kimura ,  Mamoru Miyachi

    发明人： Hiroyuki Ota ,  Yoshinori Kimura ,  Mamoru Miyachi

    IPC分类号： H01L2100

    CPC分类号： H01L33/007 ,  H01L21/268 ,  H01L21/3245

    摘要： A GaN type semiconductor layer in which a group 2 impurity element is added is formed. The GaN type semiconductor layer is heated at a predetermined temperature, while irradiating the semiconductor layer with an electromagnetic wave having an energy larger than the band gap energy of the GaN type semiconductor layer.

    摘要翻译： 形成添加了第2族杂质元素的GaN型半导体层。 在预定温度下加热GaN型半导体层，同时用具有比GaN型半导体层的带隙能量大的能量的电磁波照射半导体层。

    Semiconductor light-emitting device and fabrication method thereof
    10.
    发明授权
    Semiconductor light-emitting device and fabrication method thereof 失效
    半导体发光器件及其制造方法

    公开(公告)号：US07399649B2

    公开(公告)日：2008-07-15

    申请号：US10577722

    申请日：2004-09-27

    申请人： Mamoru Miyachi ,  Hiroyuki Ota ,  Yoshinori Kimura ,  Kiyofumi Chikuma

    发明人： Mamoru Miyachi ,  Hiroyuki Ota ,  Yoshinori Kimura ,  Kiyofumi Chikuma

    IPC分类号： H01L21/00

    CPC分类号： H01L33/0079 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/20

    摘要： An underlying layer ALY of GaN is formed on a sapphire substrate SSB; a transfer layer TLY of GaN with a bump and dip shaped surface is formed on the underlying layer ALY; a light absorption layer BLY is formed on the bump and dip shaped surface of the transfer layer TLY; and a grown layer 4 of a planarization layer CLY and a structured light-emitting layer DLY having at least an active layer are formed on the light absorption layer BLY. A support substrate 2 is provided on the grown layer 4. The backside of the sapphire substrate SSB is irradiated with light of the second harmonic of YAG laser (wavelength 532 nm) to decompose the light absorption layer BLY and delaminate the sapphire substrate SSB, thereby allowing the planarization layer CLY of a bump and dip shaped surface to be exposed as a light extraction face.

    摘要翻译： 在蓝宝石衬底SSB上形成GaN的下层ALY; 在底层ALY上形成具有凸起和浸渍形状表面的GaN的转移层TLY; 在转印层TLY的凸起和浸渍表面上形成光吸收层BLY; 并且在光吸收层BLY上形成平坦化层CLY的生长层4和至少具有有源层的结构化的发光层DLY。 在生长层4上设置有支撑基板2。 蓝宝石衬底SSB的背面用YAG激光的二次谐波（波长532nm）的光照射，以分解光吸收层BLY并使蓝宝石衬底SSB分层，从而使凸起和浸渍面的平坦化层CLY 被曝光作为光提取面。