公开(公告)号：US06795471B2

公开(公告)日：2004-09-21

申请号：US10117095

申请日：2002-04-08

申请人： Atsushi Watanabe ,  Yoshinori Kimura ,  Hiroyuki Ota ,  Toshiyuki Tanaka ,  Hirokazu Takahashi ,  Mamoru Miyachi ,  Atsuya Ito

发明人： Atsushi Watanabe ,  Yoshinori Kimura ,  Hiroyuki Ota ,  Toshiyuki Tanaka ,  Hirokazu Takahashi ,  Mamoru Miyachi ,  Atsuya Ito

IPC分类号： H01S500

CPC分类号： H01S5/32341 ,  H01S5/0213 ,  H01S5/0224 ,  H01S5/221 ,  H01S5/2216 ,  H01S5/222 ,  H01S5/2222 ,  H01S2301/18 ,  H01S2304/00

摘要： A nitride compound semiconductor laser, of which driving voltage is low and transverse mode of light is stable, having a plurality of crystal layers made of a group III nitride compound semiconductor expressed by the formula (AlGa1-x)1-yInyN (0≦x≦1, 0≦y≦1). The layers include an active layer-side guide layer which is adjacent to an active layer in the crystal layers of the group III nitride compound semiconductor and made of Alx′Ga1-x′-y′Iny′N (0≦x′≦1, 0≦y′≦1), a current constricting AlN layer deposited on said guide layer and having a stripe-shape aperture, an electrode-side guide layer made of Alx″Ga1-x″-y″Iny″N (0≦x″≦1, 0≦y″≦1) and deposited filling the aperture of the current constricting layer, and a clad layer made of AluGa1-u-vInvN (0≦u≦1, 0≦v≦1) and deposited on the electrode-side guide layer.

摘要翻译： 驱动电压低且横向模式稳定的氮化物化合物半导体激光器具有由式（AlGa1-x）1-yInyN（0≤...）表示的由III族氮化物化合物半导体构成的多个晶体层， x <= 1，0 <= y <= 1）。 这些层包括与III族氮化物化合物半导体的晶体层中的有源层相邻的有源层侧引导层，由Al x Ga 1-x'-y'In y'N（0 <= x' = 1,0 <= y'<= 1），沉积在所述引导层上并具有条形孔的电流收缩AlN层，由Al x''Ga 1-x“y”形成的电极侧引导层， “Iny''N（0 <= x”<= 1,0,0 <= y“<= 1），并填充电流收缩层的孔径，以及由AluGa1-u-vInvN（0 <= u <= 1，0 <= v <= 1）并沉积在电极侧引导层上。

公开(公告)号：US5834326A

公开(公告)日：1998-11-10

申请号：US763779

申请日：1996-12-11

申请人： Mamoru Miyachi ,  Toshiyuki Tanaka ,  Yoshinori Kimura ,  Hirokazu Takahashi ,  Hitoshi Sato ,  Atsushi Watanabe ,  Hiroyuki Ota ,  Isamu Akasaki ,  Hiroshi Amano

发明人： Mamoru Miyachi ,  Toshiyuki Tanaka ,  Yoshinori Kimura ,  Hirokazu Takahashi ,  Hitoshi Sato ,  Atsushi Watanabe ,  Hiroyuki Ota ,  Isamu Akasaki ,  Hiroshi Amano

IPC分类号： H01L33/12 ,  H01L33/32 ,  H01L33/36 ,  H01S5/00 ,  H01S5/323 ,  H01L21/00

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/325 ,  Y10S148/065 ,  Y10S148/113

摘要： A process for producing a semiconductor emitting device of group III nitride semiconductor having a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) includes; a step of forming at least one pn-junction or pin-junction and a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) to which a group II element is added; and a step of forming electrodes on the crystal layer. The process further includes an electric-field-assisted annealing treatment in which the pn-junction or pin-junction is heated to the predetermined temperature range while forming and maintaining an electric field across the pn-junction or pin-junction for at least partial time period of the predetermined temperature range via the electrodes.

摘要翻译： 一种用于制造半导体具有晶体层（的AlxGa1-x）的1-yInyN（0

公开(公告)号：US20070059852A1

公开(公告)日：2007-03-15

申请号：US10577722

申请日：2004-09-27

申请人： Mamoru Miyachi ,  Hiroyuki Ota ,  Yoshinori Kimura ,  Kirofumi Chikuma

发明人： Mamoru Miyachi ,  Hiroyuki Ota ,  Yoshinori Kimura ,  Kirofumi Chikuma

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/20

摘要： An underlying layer ALY of GaN is formed on a sapphire substrate SSB; a transfer layer TLY of GaN with a bump and dip shaped surface is formed on the underlying layer ALY; a light absorption layer BLY is formed on the bump and dip shaped surface of the transfer layer TLY; and a grown layer 4 of a planarization layer CLY and a structured light-emitting layer DLY having at least an active layer are formed on the light absorption layer BLY. A support substrate 2 is provided on the grown layer 4. The backside of the sapphire substrate SSB is irradiated with light of the second harmonic of YAG laser (wavelength 532 nm) to decompose the light absorption layer BLY and delaminate the sapphire substrate SSB, thereby allowing the planarization layer CLY of a bump and dip shaped surface to be exposed as a light extraction face.

摘要翻译： 在蓝宝石衬底SSB上形成GaN的下层ALY; 在底层ALY上形成具有凸起和浸渍形状表面的GaN的转移层TLY; 在转印层TLY的凸起和浸渍表面上形成光吸收层BLY; 并且在光吸收层BLY上形成平坦化层CLY的生长层4和至少具有有源层的结构化的发光层DLY。 在生长层4上设置有支撑基板2。 蓝宝石衬底SSB的背面用YAG激光的二次谐波（波长532nm）的光照射，以分解光吸收层BLY并使蓝宝石衬底SSB分层，从而使凸起和浸渍面的平坦化层CLY 被曝光作为光提取面。

公开(公告)号：US06335218B1

公开(公告)日：2002-01-01

申请号：US09565025

申请日：2000-05-05

申请人： Hiroyuki Ota ,  Mamoru Miyachi ,  Yoshinori Kimura

发明人： Hiroyuki Ota ,  Mamoru Miyachi ,  Yoshinori Kimura

IPC分类号： H01L2100

CPC分类号： H01L33/325 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02664 ,  H01L33/007 ,  H01L33/32 ,  H01S5/32341

摘要： A group III nitride semiconductor device producing method is constructed by: a step of forming a first crystal layer made of a group III nitride semiconductor (AlxGa1−x)1−y.InyN (0≦×≦1, 0≦y≦1) doped with a group II impurity element; a step of a second crystal layer made of a group III nitride semiconductor AlzGa1−zN (0.7≦z≦1) onto the first crystal layer; and a step of removing at least a part of the second crystal layer by etching after the formation of the first and second crystal layers.

摘要翻译： III族氮化物半导体器件的制造方法是通过以下步骤构成的：形成由III族氮化物半导体（Al x Ga 1-x）1-y.InyN（0≤x≤1,0

公开(公告)号：US06235548B1

公开(公告)日：2001-05-22

申请号：US09461035

申请日：1999-12-15

申请人： Hiroyuki Ota ,  Yoshinori Kimura ,  Mamoru Miyachi

发明人： Hiroyuki Ota ,  Yoshinori Kimura ,  Mamoru Miyachi

IPC分类号： H01L2100

CPC分类号： H01S5/32341 ,  H01S5/0213 ,  H01S5/3063

摘要： The disclosure is a method for fabricating a nitride semiconductor laser device of group-III nitride semiconductor having a substrate. The method includes a step of forming a crystal layer made of a group-III nitride semiconductor (AlxGa1-x)1-yInyN (0≦x≦1, 0≦y≦1) having an added group II element over the substrate; a step of heating the crystal layer up to a predetermined temperature in a thermal treatment atmosphere and maintaining the predetermined temperature for a first time period; and a step of introducing a hydrocarbon gas into the thermal treatment atmosphere for at least a partial time period within the first time period. The method further includes a step of irradiating an electromagnetic wave or photons to the crystal layer in the at least a partial time period, wherein the electromagnetic wave or photons have an energy greater than an energy forbidden band width of the group III nitride semiconductor in the crystal layer.

摘要翻译： 本公开是制造具有基板的III族氮化物半导体的氮化物半导体激光器件的方法。 该方法包括由具有添加的II族元素的III族氮化物半导体（Al x Ga 1-x）1-y In y N（0 <= x <= 1,0 <= y <= 1）形成的晶体层的步骤 基材; 在热处理气氛中将晶体层加热到预定温度并保持第一时间段的预定温度的步骤; 以及在第一时间段内将烃气体引入热处理气氛中至少部分时间段的步骤。 该方法还包括在至少部分时间段内将电磁波或光子照射到晶体层的步骤，其中电磁波或光子的能量大于III族氮化物半导体的能量禁带宽度 晶体层。

公开(公告)号：US06207469B1

公开(公告)日：2001-03-27

申请号：US09177805

申请日：1998-10-23

申请人： Hiroyuki Ota ,  Yoshinori Kimura ,  Mamoru Miyachi

发明人： Hiroyuki Ota ,  Yoshinori Kimura ,  Mamoru Miyachi

IPC分类号： H01L2100

CPC分类号： H01L33/007 ,  H01L21/268 ,  H01L21/3245

摘要： A GaN type semiconductor layer in which a group 2 impurity element is added is formed. The GaN type semiconductor layer is heated at a predetermined temperature, while irradiating the semiconductor layer with an electromagnetic wave having an energy larger than the band gap energy of the GaN type semiconductor layer.

摘要翻译： 形成添加了第2族杂质元素的GaN型半导体层。 在预定温度下加热GaN型半导体层，同时用具有比GaN型半导体层的带隙能量大的能量的电磁波照射半导体层。

公开(公告)号：US07399649B2

公开(公告)日：2008-07-15

申请号：US10577722

申请日：2004-09-27

申请人： Mamoru Miyachi ,  Hiroyuki Ota ,  Yoshinori Kimura ,  Kiyofumi Chikuma

发明人： Mamoru Miyachi ,  Hiroyuki Ota ,  Yoshinori Kimura ,  Kiyofumi Chikuma

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/20

摘要： An underlying layer ALY of GaN is formed on a sapphire substrate SSB; a transfer layer TLY of GaN with a bump and dip shaped surface is formed on the underlying layer ALY; a light absorption layer BLY is formed on the bump and dip shaped surface of the transfer layer TLY; and a grown layer 4 of a planarization layer CLY and a structured light-emitting layer DLY having at least an active layer are formed on the light absorption layer BLY. A support substrate 2 is provided on the grown layer 4. The backside of the sapphire substrate SSB is irradiated with light of the second harmonic of YAG laser (wavelength 532 nm) to decompose the light absorption layer BLY and delaminate the sapphire substrate SSB, thereby allowing the planarization layer CLY of a bump and dip shaped surface to be exposed as a light extraction face.

摘要翻译： 在蓝宝石衬底SSB上形成GaN的下层ALY; 在底层ALY上形成具有凸起和浸渍形状表面的GaN的转移层TLY; 在转印层TLY的凸起和浸渍表面上形成光吸收层BLY; 并且在光吸收层BLY上形成平坦化层CLY的生长层4和至少具有有源层的结构化的发光层DLY。 在生长层4上设置有支撑基板2。 蓝宝石衬底SSB的背面用YAG激光的二次谐波（波长532nm）的光照射，以分解光吸收层BLY并使蓝宝石衬底SSB分层，从而使凸起和浸渍面的平坦化层CLY 被曝光作为光提取面。

公开(公告)号：US06259122B1

公开(公告)日：2001-07-10

申请号：US09368535

申请日：1999-08-04

申请人： Hiroyuki Ota ,  Toshiyuki Tanaka ,  Atsushi Watanabe

发明人： Hiroyuki Ota ,  Toshiyuki Tanaka ,  Atsushi Watanabe

IPC分类号： H01L3300

CPC分类号： H01L33/32 ,  H01S5/32341

摘要： In a semiconductor light-emitting device having a multilayered structure which consists essentially of layers of Group III nitride semiconductors (AlxGa1−x) 1−yInyN (0≦x≦1, 0≦y≦1) which are different from each other in chemical composition ratio, generation of cracks at an interface propagating from an interface between adjacent layers is prevented. Two adjacent layers within the multilayered structure, which include a lower layer having a lattice constant larger than a lattice constant of an upper layer of the two adjacent layers, have a portion close to the interface of the two adjacent layers doped such that an element different from the Group III nitride semiconductors is added in a higher concentration, i.e. in a higher distribution density than in other portions thereof.

摘要翻译： 在具有多层结构的半导体发光器件中，其基本上由III族氮化物半导体（Al x Ga 1-x）1-y In y N（0 <= x <= 1,0 <= y <= 1） 彼此之间的化学组成比，防止了从相邻层之间的界面传播的界面产生裂纹。 多层结构中的两个相邻层，其包括具有大于两个相邻层的上层的晶格常数的晶格常数的下层，具有靠近所述两个相邻层的界面的部分，所述界面被掺杂，使得元件不同 从III族氮化物半导体中加入更高的浓度，即比其它部分更高的分布密度。

公开(公告)号：US06442184B1

公开(公告)日：2002-08-27

申请号：US09459471

申请日：1999-12-13

申请人： Hiroyuki Ota ,  Atsushi Watanabe ,  Toshiyuki Tanaka

发明人： Hiroyuki Ota ,  Atsushi Watanabe ,  Toshiyuki Tanaka

IPC分类号： H01S500

CPC分类号： H01L33/007 ,  H01L33/22 ,  H01S5/0213 ,  H01S5/3202 ,  H01S5/32341

摘要： A semiconductor light emitting device having multi-layer structure of group-3 nitride-based semiconductors is disclosed. The light emitting device has lower density of threading dislocation extending from a boundary of a crystal substrate through the multi-layer structure, thereby obtaining good luminescence characteristics. The nitride semiconductor light emitting device has the multi-layer structure. The multi-layer structure comprises a first crystal layer containing substantially pyramidal crystal grains, each of grains has a crystal face non-parallel to a surface of the substrate, and the pyramidal crystal grains are distributed at random like islands. The structure further comprises a second crystal layer formed on the first crystal layer with a compound having a different lattice constant from that of the first crystal layer. The second crystal layer smoothes a surface of the first crystal layer parallel to the surface of the substrate.

摘要翻译： 公开了一种具有III族氮化物基半导体的多层结构的半导体发光器件。 发光器件具有从晶体衬底的边界通过多层结构延伸的穿透位错的较低密度，从而获得良好的发光特性。 氮化物半导体发光器件具有多层结构。 多层结构包括含有大致锥形晶粒的第一晶体层，每个晶粒具有不平行于衬底表面的晶面，并且金字塔形晶粒以岛状随机分布。 该结构还包括在第一晶体层上形成具有与第一晶体层不同的晶格常数的化合物的第二晶体层。 第二晶体层使平行于衬底表面的第一晶体层的表面平滑。

公开(公告)号：US06555846B1

公开(公告)日：2003-04-29

申请号：US09589076

申请日：2000-06-08

申请人： Atsushi Watanabe ,  Toshiyuki Tanaka ,  Hiroyuki Ota

发明人： Atsushi Watanabe ,  Toshiyuki Tanaka ,  Hiroyuki Ota

IPC分类号： H01L2922

CPC分类号： H01L21/0262 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02579 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32 ,  H01S5/32341 ,  H01S2304/04

摘要： A group III nitride semiconductor device is disclosed which has a reduced number of threading dislocations adversely affecting characteristics of the group III nitride semiconductor device. A method for manufacturing the group III nitride semiconductor device controls pit formation in a GaN layer formed on a sapphire substrate. First, a low temperature buffer layer is formed on a sapphire substrate by MOCVD. An undoped GaN layer having a predetermined thickness is then grown on the low temperature buffer layer. Next, a GaN layer containing magnesium as a dopant is formed on the layer at a lower pressure than that of depositing the GaN layer, which results in filling pits generated on the GaN layer to flatten the surface of another GaN layer.

摘要翻译： 公开了III族氮化物半导体器件，其具有不利地影响III族氮化物半导体器件的特性的穿透位错数量减少。 制造III族氮化物半导体器件的方法控制在蓝宝石衬底上形成的GaN层中的凹坑形成。首先，通过MOCVD在蓝宝石衬底上形成低温缓冲层。 然后在低温缓冲层上生长具有预定厚度的未掺杂的GaN层。 接下来，在该层上形成含有镁作为掺杂剂的GaN层，其压力低于沉积GaN层的压力，这导致填充在GaN层上产生的凹坑以使另一GaN层的表面变平。