公开(公告)号：US06795471B2

公开(公告)日：2004-09-21

申请号：US10117095

申请日：2002-04-08

申请人： Atsushi Watanabe ,  Yoshinori Kimura ,  Hiroyuki Ota ,  Toshiyuki Tanaka ,  Hirokazu Takahashi ,  Mamoru Miyachi ,  Atsuya Ito

发明人： Atsushi Watanabe ,  Yoshinori Kimura ,  Hiroyuki Ota ,  Toshiyuki Tanaka ,  Hirokazu Takahashi ,  Mamoru Miyachi ,  Atsuya Ito

IPC分类号： H01S500

CPC分类号： H01S5/32341 ,  H01S5/0213 ,  H01S5/0224 ,  H01S5/221 ,  H01S5/2216 ,  H01S5/222 ,  H01S5/2222 ,  H01S2301/18 ,  H01S2304/00

摘要： A nitride compound semiconductor laser, of which driving voltage is low and transverse mode of light is stable, having a plurality of crystal layers made of a group III nitride compound semiconductor expressed by the formula (AlGa1-x)1-yInyN (0≦x≦1, 0≦y≦1). The layers include an active layer-side guide layer which is adjacent to an active layer in the crystal layers of the group III nitride compound semiconductor and made of Alx′Ga1-x′-y′Iny′N (0≦x′≦1, 0≦y′≦1), a current constricting AlN layer deposited on said guide layer and having a stripe-shape aperture, an electrode-side guide layer made of Alx″Ga1-x″-y″Iny″N (0≦x″≦1, 0≦y″≦1) and deposited filling the aperture of the current constricting layer, and a clad layer made of AluGa1-u-vInvN (0≦u≦1, 0≦v≦1) and deposited on the electrode-side guide layer.

摘要翻译： 驱动电压低且横向模式稳定的氮化物化合物半导体激光器具有由式（AlGa1-x）1-yInyN（0≤...）表示的由III族氮化物化合物半导体构成的多个晶体层， x <= 1，0 <= y <= 1）。 这些层包括与III族氮化物化合物半导体的晶体层中的有源层相邻的有源层侧引导层，由Al x Ga 1-x'-y'In y'N（0 <= x' = 1,0 <= y'<= 1），沉积在所述引导层上并具有条形孔的电流收缩AlN层，由Al x''Ga 1-x“y”形成的电极侧引导层， “Iny''N（0 <= x”<= 1,0,0 <= y“<= 1），并填充电流收缩层的孔径，以及由AluGa1-u-vInvN（0 <= u <= 1，0 <= v <= 1）并沉积在电极侧引导层上。

公开(公告)号：US5834326A

公开(公告)日：1998-11-10

申请号：US763779

申请日：1996-12-11

申请人： Mamoru Miyachi ,  Toshiyuki Tanaka ,  Yoshinori Kimura ,  Hirokazu Takahashi ,  Hitoshi Sato ,  Atsushi Watanabe ,  Hiroyuki Ota ,  Isamu Akasaki ,  Hiroshi Amano

发明人： Mamoru Miyachi ,  Toshiyuki Tanaka ,  Yoshinori Kimura ,  Hirokazu Takahashi ,  Hitoshi Sato ,  Atsushi Watanabe ,  Hiroyuki Ota ,  Isamu Akasaki ,  Hiroshi Amano

IPC分类号： H01L33/12 ,  H01L33/32 ,  H01L33/36 ,  H01S5/00 ,  H01S5/323 ,  H01L21/00

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/325 ,  Y10S148/065 ,  Y10S148/113

摘要： A process for producing a semiconductor emitting device of group III nitride semiconductor having a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) includes; a step of forming at least one pn-junction or pin-junction and a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) to which a group II element is added; and a step of forming electrodes on the crystal layer. The process further includes an electric-field-assisted annealing treatment in which the pn-junction or pin-junction is heated to the predetermined temperature range while forming and maintaining an electric field across the pn-junction or pin-junction for at least partial time period of the predetermined temperature range via the electrodes.

摘要翻译： 一种用于制造半导体具有晶体层（的AlxGa1-x）的1-yInyN（0

公开(公告)号：US06555846B1

公开(公告)日：2003-04-29

申请号：US09589076

申请日：2000-06-08

申请人： Atsushi Watanabe ,  Toshiyuki Tanaka ,  Hiroyuki Ota

发明人： Atsushi Watanabe ,  Toshiyuki Tanaka ,  Hiroyuki Ota

IPC分类号： H01L2922

CPC分类号： H01L21/0262 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02579 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32 ,  H01S5/32341 ,  H01S2304/04

摘要： A group III nitride semiconductor device is disclosed which has a reduced number of threading dislocations adversely affecting characteristics of the group III nitride semiconductor device. A method for manufacturing the group III nitride semiconductor device controls pit formation in a GaN layer formed on a sapphire substrate. First, a low temperature buffer layer is formed on a sapphire substrate by MOCVD. An undoped GaN layer having a predetermined thickness is then grown on the low temperature buffer layer. Next, a GaN layer containing magnesium as a dopant is formed on the layer at a lower pressure than that of depositing the GaN layer, which results in filling pits generated on the GaN layer to flatten the surface of another GaN layer.

摘要翻译： 公开了III族氮化物半导体器件，其具有不利地影响III族氮化物半导体器件的特性的穿透位错数量减少。 制造III族氮化物半导体器件的方法控制在蓝宝石衬底上形成的GaN层中的凹坑形成。首先，通过MOCVD在蓝宝石衬底上形成低温缓冲层。 然后在低温缓冲层上生长具有预定厚度的未掺杂的GaN层。 接下来，在该层上形成含有镁作为掺杂剂的GaN层，其压力低于沉积GaN层的压力，这导致填充在GaN层上产生的凹坑以使另一GaN层的表面变平。

公开(公告)号：US06365921B1

公开(公告)日：2002-04-02

申请号：US09593144

申请日：2000-06-14

申请人： Atsushi Watanabe ,  Toshiyuki Tanaka ,  Hiroyuki Ota

发明人： Atsushi Watanabe ,  Toshiyuki Tanaka ,  Hiroyuki Ota

IPC分类号： H01L2100

CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262

摘要： A GaN-based semiconductor light emitting device is provided that has superior light emitting characteristics by controlling occurrence of a threading dislocation and keeping the flatness of a film GaN-based semiconductor light emitting device fabrication method comprises forming steps of at least forming an undoped gallium-nitride underlying layer on a low-temperature buffer layer while keeping the pressure in a reactor at a value close to atmospheric pressure.

摘要翻译： 提供了一种GaN基半导体发光器件，其通过控制穿透位错的发生并保持膜的平坦度而具有优异的发光特性。GaN基半导体发光器件制造方法包括形成至少形成未掺杂的镓 - 同时将反应器中的压力保持在接近大气压的值，在低温缓冲层上形成氮化物底层。

公开(公告)号：US06259122B1

公开(公告)日：2001-07-10

申请号：US09368535

申请日：1999-08-04

申请人： Hiroyuki Ota ,  Toshiyuki Tanaka ,  Atsushi Watanabe

发明人： Hiroyuki Ota ,  Toshiyuki Tanaka ,  Atsushi Watanabe

IPC分类号： H01L3300

CPC分类号： H01L33/32 ,  H01S5/32341

摘要： In a semiconductor light-emitting device having a multilayered structure which consists essentially of layers of Group III nitride semiconductors (AlxGa1−x) 1−yInyN (0≦x≦1, 0≦y≦1) which are different from each other in chemical composition ratio, generation of cracks at an interface propagating from an interface between adjacent layers is prevented. Two adjacent layers within the multilayered structure, which include a lower layer having a lattice constant larger than a lattice constant of an upper layer of the two adjacent layers, have a portion close to the interface of the two adjacent layers doped such that an element different from the Group III nitride semiconductors is added in a higher concentration, i.e. in a higher distribution density than in other portions thereof.

摘要翻译： 在具有多层结构的半导体发光器件中，其基本上由III族氮化物半导体（Al x Ga 1-x）1-y In y N（0 <= x <= 1,0 <= y <= 1） 彼此之间的化学组成比，防止了从相邻层之间的界面传播的界面产生裂纹。 多层结构中的两个相邻层，其包括具有大于两个相邻层的上层的晶格常数的晶格常数的下层，具有靠近所述两个相邻层的界面的部分，所述界面被掺杂，使得元件不同 从III族氮化物半导体中加入更高的浓度，即比其它部分更高的分布密度。

公开(公告)号：US06442184B1

公开(公告)日：2002-08-27

申请号：US09459471

申请日：1999-12-13

申请人： Hiroyuki Ota ,  Atsushi Watanabe ,  Toshiyuki Tanaka

发明人： Hiroyuki Ota ,  Atsushi Watanabe ,  Toshiyuki Tanaka

IPC分类号： H01S500

CPC分类号： H01L33/007 ,  H01L33/22 ,  H01S5/0213 ,  H01S5/3202 ,  H01S5/32341

摘要： A semiconductor light emitting device having multi-layer structure of group-3 nitride-based semiconductors is disclosed. The light emitting device has lower density of threading dislocation extending from a boundary of a crystal substrate through the multi-layer structure, thereby obtaining good luminescence characteristics. The nitride semiconductor light emitting device has the multi-layer structure. The multi-layer structure comprises a first crystal layer containing substantially pyramidal crystal grains, each of grains has a crystal face non-parallel to a surface of the substrate, and the pyramidal crystal grains are distributed at random like islands. The structure further comprises a second crystal layer formed on the first crystal layer with a compound having a different lattice constant from that of the first crystal layer. The second crystal layer smoothes a surface of the first crystal layer parallel to the surface of the substrate.

摘要翻译： 公开了一种具有III族氮化物基半导体的多层结构的半导体发光器件。 发光器件具有从晶体衬底的边界通过多层结构延伸的穿透位错的较低密度，从而获得良好的发光特性。 氮化物半导体发光器件具有多层结构。 多层结构包括含有大致锥形晶粒的第一晶体层，每个晶粒具有不平行于衬底表面的晶面，并且金字塔形晶粒以岛状随机分布。 该结构还包括在第一晶体层上形成具有与第一晶体层不同的晶格常数的化合物的第二晶体层。 第二晶体层使平行于衬底表面的第一晶体层的表面平滑。

公开(公告)号：US06711192B1

公开(公告)日：2004-03-23

申请号：US09567024

申请日：2000-05-09

申请人： Kiyofumi Chikuma ,  Hiroyuki Ota ,  Toshiyuki Tanaka

发明人： Kiyofumi Chikuma ,  Hiroyuki Ota ,  Toshiyuki Tanaka

IPC分类号： H01S500

CPC分类号： H01S5/22 ,  H01L2224/48463 ,  H01S5/0202 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/32341 ,  H01S2304/04

摘要： A method for fabricating a nitride semiconductor laser device having crystal layers each made of a group III nitride semiconductor (AlxGa1−x)1−YInyN (0≦x≦1, 0≦y≦1) layered in order on a ground layer (Alx′Ga1−x′)1−y′Iny′N (0≦x′≦1, 0≦y′≦1). The method including a step of forming a plurality of crystal layers each made of group III nitride semiconductor on a ground layer formed on a substrate such as sapphire; a step of applying a light beam from the substrate side toward the interface between the substrate and the ground layer thereby forming the decomposed-matter area of a nitride semiconductor; a step of separating the ground layer carrying the crystal layers from the substrate along the decomposed-matter area; and a step of cleaving the ground layer thereby forming a cleavage plane of the crystal layers.

摘要翻译： 一种用于制造氮化物半导体激光器件的方法，该器件具有各自由III族氮化物半导体（Al x Ga 1-x）1-Y In y N（0 <= x <= 1,0 <= y <= 1） 接地层（Al x Ga 1-x'）1-y'In y'N（0 <= x'<= 1,0 <= y'<= 1）。 该方法包括在形成在诸如蓝宝石的衬底上的接地层上形成由III族氮化物半导体制成的多个晶体层的步骤; 从基板侧朝向基板和接地层之间的界面施加光束，从而形成氮化物半导体的分解物区域的步骤; 沿着分解物区域从基板分离携带晶体层的接地层的步骤; 以及切割接地层从而形成晶体层的解理面的步骤。

公开(公告)号：US09459703B2

公开(公告)日：2016-10-04

申请号：US13146499

申请日：2009-12-14

申请人： Kouichi Kanemura ,  Yasushi Kojima ,  Teruo Koukai ,  Toshiyuki Tanaka ,  Hiroyoshi Ohmiya

发明人： Kouichi Kanemura ,  Yasushi Kojima ,  Teruo Koukai ,  Toshiyuki Tanaka ,  Hiroyoshi Ohmiya

IPC分类号： G06F3/023 ,  G06F3/0489 ,  H04N5/44 ,  H04N21/422

CPC分类号： G06F3/0233 ,  G06F3/0236 ,  G06F3/04895 ,  H04M2250/70 ,  H04N5/4403 ,  H04N21/42213

摘要： A character input device includes: a terminal control unit that accepts information on a character candidate being a candidate of an input confirmed character, and performs a displaying process of the character candidate, and generates a guide image whose image varies in accordance with a remaining time until an input confirmation of the character candidate; and a display unit that displays the character candidate and the guide image. By displaying the guide image that varies in accordance with the remaining time before the input character is confirmed, how long it takes until the character is confirmed, or whether the character has already been confirmed is reported to the user, so as to avoid an unintended manipulation of the user.

摘要翻译： 字符输入装置包括：终端控制单元，其接收关于作为输入确认字符的候选的字符候选的信息，并且执行字符候选的显示处理，并且生成其图像根据剩余时间变化的引导图像 直到字符候选者的输入确认; 以及显示单元，其显示字符候选和引导图像。 通过显示根据确认输入字符之前的剩余时间而变化的引导图像，直到确认字符所需的时间，或者是否已经确认字符已经被报告给用户，以避免意外 操纵用户。

公开(公告)号：US08470406B2

公开(公告)日：2013-06-25

申请号：US12064004

申请日：2006-08-10

申请人： Ichizo Kobayashi ,  Takeshi Sasakura ,  Toshiyuki Tanaka ,  Makoto Nakajima ,  Masaru Toida ,  Takahisa Isobe

发明人： Ichizo Kobayashi ,  Takeshi Sasakura ,  Toshiyuki Tanaka ,  Makoto Nakajima ,  Masaru Toida ,  Takahisa Isobe

IPC分类号： B05D1/02

CPC分类号： B28C5/026 ,  B01F5/0256 ,  B05B7/0416 ,  E02D31/02 ,  E02D31/04 ,  E21F15/10 ,  G21F9/36

摘要： The present invention provides a spray method and spray apparatus for bentonite-based material that allow forming a bentonite layer of high dry density. A spray apparatus 1 comprises a supersonic nozzle 2, to which a compressor 5 and a bentonite container 6 are connected. The supersonic nozzle 2 is fed compressed air from the compressor 5 and a bentonite-based material from the bentonite container 6. The compressed air, mixed with the bentonite-based material, is accelerated to supersonic speed when passing through a constriction portion 14 of the supersonic nozzle 2, and is sprayed at supersonic speed out of a jet orifice 11.

摘要翻译： 本发明提供了一种用于膨润土基材料的喷涂方法和喷涂装置，其允许形成高密度的膨润土层。 喷雾装置1包括超音速喷嘴2，压缩机5和膨润土容器6连接到该喷嘴上。 超音速喷嘴2从压缩机5输送压缩空气和来自膨润土容器6的膨润土类材料。与膨润土类材料混合的压缩空气通过膨润土类材料的收缩部14时被加速到超声速度 超音速喷嘴2，并且以超音速喷射出喷射孔11。

公开(公告)号：US08446518B2

公开(公告)日：2013-05-21

申请号：US12624629

申请日：2009-11-24

申请人： Toshiyuki Tanaka

发明人： Toshiyuki Tanaka

IPC分类号： H04N5/232 ,  G03B13/00

CPC分类号： H04N5/2256 ,  H04N5/23212

摘要： A photographing apparatus and method are provided that can reduce power consumption by detecting a high precision focusing position for a predetermined range and controlling light emission according to a driving mode when performing focus control. The photographing apparatus includes: a lens movable in an optical axis direction and that focuses a subject image on an imaging surface; a photoelectric converter that converting the subject image into an electric signal; a focusing position detector for detecting a focusing position of the focus lens when at least one main subject image of the subject images is focused on the imaging surface; a focus control unit for controlling a first drive of the focus lens and a second drive of the focus lens that is different from the first drive; a light emitting unit; and a light emitting control unit for controlling for different light emissions during the first and second drive.

摘要翻译： 提供一种拍摄装置和方法，其可以通过在预定范围内检测高精度聚焦位置并且当执行聚焦控制时根据驱动模式来控制发光来降低功耗。 拍摄装置包括：可沿光轴方向移动并将被摄体图像聚焦在成像表面上的透镜; 光电转换器，将被摄体图像转换为电信号; 聚焦位置检测器，用于当被摄体图像的至少一个主要被摄体图像聚焦在成像表面上时，检测聚焦透镜的聚焦位置; 聚焦控制单元，用于控制聚焦透镜的第一驱动和与第一驱动不同的聚焦透镜的第二驱动; 发光单元; 以及发光控制单元，用于在第一和第二驱动期间控制不同的光发射。