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    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF
    1.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20100001409A1

    公开(公告)日：2010-01-07

    申请号：US12514214

    申请日：2007-10-29

    申请人： Aurelie Humbert ,  Romano Hoofman

    发明人： Aurelie Humbert ,  Romano Hoofman

    IPC分类号： H01L23/48 ,  H01L21/768 ,  H01L23/522

    CPC分类号： H01L21/7682 ,  H01L21/76825 ,  H01L21/76831 ,  H01L23/5222 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

    摘要： The invention relates to a semiconductor device comprising: a substrate (1), the substrate (1) comprising a body (5), the body (5) having a surface, the substrate (1) being provided with an insulating layer (10) on the surface of the body (1);—a conductor (25) with insulating sidewall spacers (22) located in the insulating layer (10), the conductor (25) having a current-flow direction during operation, the conductor (25) having a first width, the insulating sidewall spacers (22) each having a second width being smaller than the first width of the conductor (25), the first width and the second width being measured in a direction perpendicular to the current-flow direction of the conductor (25) and parallel to said surface, the conductor (25) having a first top surface extending parallel to said surface, the insulating sidewall spacers (22) having a second top surface, and airgaps (30) located in the insulating layer (10) adjacent to the insulating sidewall spacers (22), characterized in that the first top surface coincides with the second top surface, and in that the airgaps (30) extend from the surface of the body (5) to said first and second top surface. The invention further relates to a method of manufacturing such a semiconductor device. The semiconductor device according to the invention enables a lower resistance of the conductor while still providing a tolerance for unlanded vias.

    摘要翻译： 本发明涉及一种半导体器件，包括：衬底（1），所述衬底（1）包括主体（5），所述主体（5）具有表面，所述衬底（1）设置有绝缘层（10） 在所述主体（1）的表面上; - 具有位于所述绝缘层（10）中的绝缘侧壁间隔物（22）的导体（25），所述导体（25）在操作期间具有电流流动方向，所述导体 ），所述绝缘侧壁间隔件（22）各自具有小于所述导体（25）的第一宽度的第二宽度，所述第一宽度和所述第二宽度在垂直于所述电流流动方向的方向上被测量 的导体（25）并且平行于所述表面，所述导体（25）具有平行于所述表面延伸的第一顶表面，所述绝缘侧壁间隔件（22）具有第二顶表面，以及位于绝缘体中的气隙（30） 邻近绝缘侧壁间隔物（22）的层（10），其特征在于 第一顶表面与第二顶表面重合，并且气囊（30）从主体（5）的表面延伸到所述第一和第二顶表面。 本发明还涉及一种制造这种半导体器件的方法。 根据本发明的半导体器件使得导体的电阻较低，同时仍然提供对未经过过孔的容差。

    Humidity sensor based on progressive corrosion of exposed material
    4.
    发明授权
    Humidity sensor based on progressive corrosion of exposed material 失效
    基于暴露材料逐渐腐蚀的湿度传感器

    公开(公告)号：US08683861B2

    公开(公告)日：2014-04-01

    申请号：US12670715

    申请日：2008-07-30

    申请人： Aurelie Humbert ,  Youri Victorovitch Ponomarev ,  Matthias Merz ,  Romano Hoofman

    发明人： Aurelie Humbert ,  Youri Victorovitch Ponomarev ,  Matthias Merz ,  Romano Hoofman

    IPC分类号： G01N19/00

    CPC分类号： G01N17/04

    摘要： A sensor senses a characteristic of an environment, e.g., humidity. The sensor has a substrate with strips of material that is sensitive to corrosion as a result of the characteristic. The strips are configured to respond differently to the characteristic. By means of repeatedly measuring the resistances of the strips, the environment can be monitored in terms of accumulated exposure to the characteristic. The strips are manufactured in a semiconductor technology so as to generate accurate sensors that behave predictably.

    摘要翻译： 传感器感测环境的特性，例如湿度。 传感器具有由于特性而对腐蚀敏感的材料条带的基板。 条带被配置为对特性做出不同的响应。 通过重复测量条的电阻，可以根据特征的累积暴露来监测环境。 这些条以半导体技术制造，以便产生可预测地行为的精确传感器。

    HUMIDITY SENSOR BASED ON PROGRESSIVE CORROSION OF EXPOSED MATERIAL
    5.
    发明申请
    HUMIDITY SENSOR BASED ON PROGRESSIVE CORROSION OF EXPOSED MATERIAL 失效
    基于暴露材料逐渐腐蚀的湿度传感器

    公开(公告)号：US20100192688A1

    公开(公告)日：2010-08-05

    申请号：US12670715

    申请日：2008-07-30

    申请人： Aurelie Humbert ,  Youri Victorovitch Ponomarev ,  Matthias Merz ,  Romano Hoofman

    发明人： Aurelie Humbert ,  Youri Victorovitch Ponomarev ,  Matthias Merz ,  Romano Hoofman

    IPC分类号： G01N17/04

    CPC分类号： G01N17/04

    摘要： A sensor senses a characteristic of an environment, e.g., humidity. The sensor has a substrate with strips of material that is sensitive to corrosion as a result of the characteristic. The strips are configured to respond differently to the characteristic. By means of repeatedly measuring the resistances of the strips, the environment can be monitored in terms of accumulated exposure to the characteristic. The strips are manufactured in a semiconductor technology so as to generate accurate sensors that behave predictably.

    摘要翻译： 传感器感测环境的特性，例如湿度。 传感器具有由于特性而对腐蚀敏感的材料条带的基板。 条带被配置为对特性做出不同的响应。 通过重复测量条的电阻，可以根据特征的累积暴露来监测环境。 这些条以半导体技术制造，以便产生可预测地行为的精确传感器。

    Sensor
    6.
    发明授权
    Sensor 有权
    传感器

    公开(公告)号：US08925371B2

    公开(公告)日：2015-01-06

    申请号：US13382726

    申请日：2010-07-16

    申请人： Aurelie Humbert ,  Youri Victorovitch Ponomarev ,  Roel Daamen ,  Matthias Merz

    发明人： Aurelie Humbert ,  Youri Victorovitch Ponomarev ,  Roel Daamen ,  Matthias Merz

    IPC分类号： G01N7/00 ,  G01N19/10 ,  G01N27/22 ,  G01N33/00

    CPC分类号： G01N27/223 ,  G01N33/004

    摘要： A sensor (2) for sensing a first substance and a second substance, the sensor comprising first (3) and second (5) sensor components each comprising a first material (20), the first material being sensitive to both the first substance and the second substance, the sensor further comprising a barrier (18) for preventing the second substance from passing into the second sensor component (5).

    摘要翻译： 一种用于感测第一物质和第二物质的传感器（2），所述传感器包括第一（3）和第二（5）个传感器部件，每个传感器部件包括第一材料（20），所述第一材料对第一物质和 第二物质，传感器还包括用于防止第二物质进入第二传感器部件（5）的阻挡层（18）。

    SENSOR HAS COMBINED IN-PLANE AND PARALLEL-PLANE CONFIGURATION
    8.
    发明申请
    SENSOR HAS COMBINED IN-PLANE AND PARALLEL-PLANE CONFIGURATION 失效
    传感器组合在平面和平行平面配置中

    公开(公告)号：US20110185810A1

    公开(公告)日：2011-08-04

    申请号：US13063325

    申请日：2009-09-10

    申请人： Aurelie Humbert ,  Matthias Merz

    发明人： Aurelie Humbert ,  Matthias Merz

    IPC分类号： G01N27/22

    CPC分类号： G01N27/223

    摘要： A sensor senses a magnitude of a physical parameter of the sensor's environment. The sensor has first and second electrodes, and a material layer between them. The material has an electrical property, e.g., capacitance or resistance, whose value depends on the magnitude of the physical parameter. The first electrode is formed in a first layer, and the second electrode is formed in a second layer, different from the first layer. The first layer has a trench and an elevation next to the trench. The trench has a bottom wall and a side wall. The material is positioned on the bottom wall and on the side wall and on top of the elevation. The trench accommodates at least a part of the second electrode. The second electrode leaves exposed the material formed on top of the elevation.

    摘要翻译： 传感器感测传感器环境的物理参数的大小。 传感器具有第一和第二电极以及它们之间的材料层。 该材料具有电性能，例如电容或电阻，其值取决于物理参数的大小。 第一电极形成在第一层中，并且第二电极形成在与第一层不同的第二层中。 第一层在沟槽旁边具有沟槽和高度。 沟槽具有底壁和侧壁。 材料位于底壁和侧壁上以及高度的顶部。 沟槽容纳至少一部分第二电极。 第二个电极离开了形成在高程顶部的材料。

    REVERSE ENGINEERING RESISTANT READ ONLY MEMORY
    9.
    发明申请
    REVERSE ENGINEERING RESISTANT READ ONLY MEMORY 有权
    反向工程电阻只读存储器

    公开(公告)号：US20110006352A1

    公开(公告)日：2011-01-13

    申请号：US12920747

    申请日：2009-03-05

    申请人： Aurelie Humbert ,  Pierre Goarin ,  Romain Delhougne

    发明人： Aurelie Humbert ,  Pierre Goarin ,  Romain Delhougne

    IPC分类号： H01L27/108 ,  H01L21/8246

    CPC分类号： H01L23/573 ,  H01L23/5223 ,  H01L27/112 ,  H01L27/11213 ,  H01L27/11253 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A read only memory is manufactured with a plurality of transistors (4) on a semiconductor substrate (2). A low-k dielectric (10) and interconnects (14) are provided over the transistors (4). To program the read only memory, the low-k dielectric is implanted with ions (22) in unmasked regions (20) leaving the dielectric unimplanted in masked regions (18). The memory thus formed is difficult to reverse engineer.

    摘要翻译： 在半导体衬底（2）上制造具有多个晶体管（4）的只读存储器。 在晶体管（4）之上提供低k电介质（10）和互连（14）。 为了对只读存储器进行编程，在未掩模区域（20）中注入低k电介质，离子（22）留下未被掩盖在掩蔽区域（18）中的电介质。 这样形成的记忆难以逆向工程。

    Sensor
    10.
    发明授权
    Sensor 有权
    传感器

    公开(公告)号：US09546884B2

    公开(公告)日：2017-01-17

    申请号：US12889832

    申请日：2010-09-24

    申请人： Roel Daamen ,  Aurelie Humbert ,  Matthias Merz ,  Youri Victorovitch Ponomarev

    发明人： Roel Daamen ,  Aurelie Humbert ,  Matthias Merz ,  Youri Victorovitch Ponomarev

    IPC分类号： G06K19/06 ,  G01D5/14

    CPC分类号： G01D5/14 ,  H01L2224/11

    摘要： A sensor comprising a silicon substrate having a first and a second surface, integrated circuitry provided on the first surface of the silicon substrate, and a sensor structure provided on the second surface of the silicon substrate. The sensor structure and the integrated circuitry are electrically coupled to each other.

    摘要翻译： 一种传感器，包括具有第一和第二表面的硅衬底，设置在硅衬底的第一表面上的集成电路以及设置在硅衬底的第二表面上的传感器结构。 传感器结构和集成电路彼此电耦合。