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公开(公告)号：US20140299575A1
公开(公告)日：2014-10-09
申请号：US14124213
申请日：2012-06-07
申请人： Aurelie Marie Andree Brizard , Wilhelmus Sebastianus Marcus Maria Ketelaars , Sander Frederik Wuister , Roelof Koole , Emiel Peeters , Christianus Martinus Van Heesch , Henri Marie Joseph Boots , Thanh Trung Nguyen
发明人： Aurelie Marie Andree Brizard , Wilhelmus Sebastianus Marcus Maria Ketelaars , Sander Frederik Wuister , Roelof Koole , Emiel Peeters , Christianus Martinus Van Heesch , Henri Marie Joseph Boots , Thanh Trung Nguyen
IPC分类号： G03F7/00 , C08F299/04 , C08F299/02
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , C08F299/02 , C08F299/04 , H01L51/0043
摘要： A BCP having first block of first monomer and second block of second monomer, adapted to undergo a transition from disordered state to ordered state at a temperature less than TOD, further including a bridging moiety having a functional group to provide hydrogen bonding between bridging moieties of adjacent first and second BCP molecules when in the ordered state and at a temperature in excess of a glass transition temperature Tg for the BCP. Composition including BCP comprising first block of first monomer and second block of second monomer, and a crosslinking compound having first and second terminal groups joined by a central moiety and arranged to crosslink second blocks of adjacent first and second BCP molecules by providing non-covalent bonding between the terminal groups and a functional group of the second monomer of the second blocks when the BCP is in the ordered state.
摘要翻译： BCP具有第一单体的第一嵌段和第二单体的第二嵌段，适于在低于TOD的温度下经历从无序状态转化为有序状态，还包括具有官能团的桥连部分以在桥连部分之间提供氢键 相邻的第一和第二BCP分子处于有序状态并且在超过BCP的玻璃化转变温度Tg的温度下。 包含BCP的组合物包含第一单体的第一嵌段和第二单体的第二嵌段，以及具有通过中心部分连接的第一和第二端基的交联化合物，并且被布置成通过提供非共价键来交联相邻的第一和第二BCP分子的第二嵌段 当BCP处于有序状态时，端子组与第二块的第二单体的官能团之间。
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公开(公告)号：US09285676B2
公开(公告)日：2016-03-15
申请号：US14124213
申请日：2012-06-07
申请人： Aurelie Marie Andree Brizard , Wilhelmus Sebastianus Marcus Maria Ketelaars , Sander Frederik Wuister , Roelof Koole , Emiel Peeters , Christianus Martinus Van Heesch , Henri Marie Joseph Boots , Thanh Trung Nguyen
发明人： Aurelie Marie Andree Brizard , Wilhelmus Sebastianus Marcus Maria Ketelaars , Sander Frederik Wuister , Roelof Koole , Emiel Peeters , Christianus Martinus Van Heesch , Henri Marie Joseph Boots , Thanh Trung Nguyen
IPC分类号： G03F7/11 , G03F7/00 , H01L51/00 , C08F299/02 , C08F299/04 , B82Y10/00 , B82Y40/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , C08F299/02 , C08F299/04 , H01L51/0043
摘要： A BCP having first block of first monomer and second block of second monomer, adapted to undergo a transition from disordered state to ordered state at a temperature less than TOD, further including a bridging moiety having a functional group to provide hydrogen bonding between bridging moieties of adjacent first and second BCP molecules when in the ordered state and at a temperature in excess of a glass transition temperature Tg for the BCP. Composition including BCP comprising first block of first monomer and second block of second monomer, and a crosslinking compound having first and second terminal groups joined by a central moiety and arranged to crosslink second blocks of adjacent first and second BCP molecules by providing non-covalent bonding between the terminal groups and a functional group of the second monomer of the second blocks when the BCP is in the ordered state.
摘要翻译： BCP具有第一单体的第一嵌段和第二单体的第二嵌段，适于在低于TOD的温度下经历从无序状态转化为有序状态，还包括具有官能团的桥连部分以在桥连部分之间提供氢键 相邻的第一和第二BCP分子处于有序状态并且在超过BCP的玻璃化转变温度Tg的温度下。 包含BCP的组合物包含第一单体的第一嵌段和第二单体的第二嵌段，以及具有通过中心部分连接的第一和第二端基的交联化合物，并且被布置成通过提供非共价键来交联相邻的第一和第二BCP分子的第二嵌段 当BCP处于有序状态时，端子组与第二块的第二单体的官能团之间。
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3.发明申请METHODS FOR PROVIDING PATTERNED ORIENTATION TEMPLATES FOR SELF-ASSEMBLABLE POLYMERS FOR USE IN DEVICE LITHOGRAPHY 审中-公开提供用于自组装聚合物的图案方向模板的方法用于器件平台的使用公开(公告)号：US20130266727A1
公开(公告)日：2013-10-10
申请号：US13994426
申请日：2011-12-09
申请人： Emiel Peeters , Wilhelmus Sebastianus Marcus Maria Ketelaars , Johan Frederik Dijksman , Sander Frederik Wuister , Roelof Koole , Christianus Martinus Van Heesch
发明人： Emiel Peeters , Wilhelmus Sebastianus Marcus Maria Ketelaars , Johan Frederik Dijksman , Sander Frederik Wuister , Roelof Koole , Christianus Martinus Van Heesch
IPC分类号： C30B19/12
CPC分类号： C30B19/12 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： A method is disclosed involving depositing a neutral orientation template layer onto a substrate after formation of chemical epitaxy or graphoepitaxy features on the substrate, but before deposition and orientation of a self-assemblable polymer. The orientation layer is arranged to bond with the substrate but not with certain features, so that it may be easily removed by vacuum or rinsing with organic solvent. The neutral orientation layer has a chemical affinity to match that of blocks in the self-assemblable polymer so that blocks of differing types wet the neutral orientation layer so that domains in the self-assembled polymer may lie side by side along the substrate surface, with interfaces normal to the substrate surface. The resulting aligned and oriented self-assembled polymer may itself be used as a resist for device lithography of the substrate.
摘要翻译： 公开了一种方法，其涉及在衬底上形成化学外延或者石墨电极特征之后，但在自组装聚合物的沉积和取向之前，将中性取向模板层沉积到衬底上。 取向层被布置成与基底结合，但不具有某些特征，使得其可以容易地通过真空或用有机溶剂漂洗除去。 中性取向层具有与自组装聚合物中的嵌段相符的化学亲和力，使得不同类型的块润湿中性取向层，使得自组装聚合物中的畴可以沿着衬底表面并排， 界面垂直于衬底表面。 所得到的对准和取向的自组装聚合物本身可以用作衬底的器件光刻的抗蚀剂。
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公开(公告)号：US10538859B2
公开(公告)日：2020-01-21
申请号：US13994426
申请日：2011-12-09
申请人： Emiel Peeters , Wilhelmus Sebastianus Marcus Maria Ketelaars , Johan Frederik Dijksman , Sander Frederik Wuister , Roelof Koole , Christianus Martinus Van Heesch
发明人： Emiel Peeters , Wilhelmus Sebastianus Marcus Maria Ketelaars , Johan Frederik Dijksman , Sander Frederik Wuister , Roelof Koole , Christianus Martinus Van Heesch
IPC分类号： C30B19/12
摘要： A method is disclosed involving depositing a neutral orientation template layer onto a substrate after formation of chemical epitaxy or graphoepitaxy features on the substrate, but before deposition and orientation of a self-assemblable polymer. The orientation layer is arranged to bond with the substrate but not with certain features, so that it may be easily removed by vacuum or rinsing with organic solvent. The neutral orientation layer has a chemical affinity to match that of blocks in the self-assemblable polymer so that blocks of differing types wet the neutral orientation layer so that domains in the self-assembled polymer may lie side by side along the substrate surface, with interfaces normal to the substrate surface. The resulting aligned and oriented self-assembled polymer may itself be used as a resist for device lithography of the substrate.
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公开(公告)号：US08956804B2
公开(公告)日：2015-02-17
申请号：US14123943
申请日：2012-06-07
CPC分类号： G03F7/004 , B82Y10/00 , B82Y40/00 , C30B19/00 , G03F7/0002
摘要： A block copolymer, adapted to self-assemble to form an ordered pattern on a substrate, has first and second blocks with a terminal moiety covalently bonded to the end of the first block. The molecular weight of the terminal moiety is 20% or less than that of the block copolymer and the terminal moiety has a low chemical affinity for the first block. The terminal moiety can assist the accurate positional placement of the domains of the ordered array and lead to improved critical dimension uniformity and/or reduced line edge roughness. The polymer may be useful in combination with a graphoepitaxy template, where the terminal moiety is chosen to associate with a sidewall of the template. This may reduce undesired aggregation of polymer domains at a sidewall and/or assist in domain placement accuracy.
摘要翻译： 适于自组装以在基底上形成有序图案的嵌段共聚物具有第一和第二嵌段，其末端部分共价键合到第一嵌段的末端。 末端部分的分子量为嵌段共聚物的分子量的20％以下，末端部分对第一嵌段具有低的化学亲和力。 末端部分可以帮助有序阵列的域的精确位置放置并且导致改进的临界尺寸均匀性和/或减少的线边缘粗糙度。 所述聚合物可以与骨架外延模板组合使用，其中末端部分被选择为与模板的侧壁缔合。 这可以减少侧壁处的聚合物域的不希望的聚集和/或有助于域放置精度。
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公开(公告)号：US20140113232A1
公开(公告)日：2014-04-24
申请号：US14123943
申请日：2012-06-07
CPC分类号： G03F7/004 , B82Y10/00 , B82Y40/00 , C30B19/00 , G03F7/0002
摘要： A block copolymer, adapted to self-assemble to form an ordered pattern on a substrate, has first and second blocks with a terminal moiety covalently bonded to the end of the first block. The molecular weight of the terminal moiety is 20% or less than that of the block copolymer and the terminal moiety has a low chemical affinity for the first block. The terminal moiety can assist the accurate positional placement of the domains of the ordered array and lead to improved critical dimension uniformity and/or reduced line edge roughness. The polymer may be useful in combination with a graphoepitaxy template, where the terminal moiety is chosen to associate with a sidewall of the template. This may reduce undesired aggregation of polymer domains at a sidewall and/or assist in domain placement accuracy.
摘要翻译： 适于自组装以在基底上形成有序图案的嵌段共聚物具有第一和第二嵌段，其末端部分共价键合到第一嵌段的末端。 末端部分的分子量为嵌段共聚物的分子量的20％以下，末端部分对第一嵌段具有低的化学亲和力。 末端部分可以帮助有序阵列的域的精确位置放置并且导致改进的临界尺寸均匀性和/或减少的线边缘粗糙度。 所述聚合物可以与骨架外延模板组合使用，其中末端部分被选择为与模板的侧壁缔合。 这可以减少侧壁处的聚合物域的不希望的聚集和/或有助于域放置精度。
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公开(公告)号：US08828253B2
公开(公告)日：2014-09-09
申请号：US13816720
申请日：2011-07-21
IPC分类号： B44C1/22 , B81C1/00 , H01L21/033
CPC分类号： B44C1/227 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , G03F7/0002 , H01L21/0337
摘要： A method of lithography on a substrate uses a self-assembled polymer (SAP) layer deposited on the substrate, with first and second domains arranged in a pattern across the layer. A planarization layer is formed over the SAP and a development etch applied to substantially remove a portion of the planarization layer over the second domain leaving a cap of the planarization layer substantially covering the first domain. The uncapped second domain is then removed from the surface by a breakthrough etch leaving the capped first domain as a pattern feature on the surface. A transfer etch may then be used to transfer the pattern feature to the substrate using the capped first domain. The capping allows the second domain to be removed, e.g., without excessive loss of lateral feature width for the remaining first domain, even when the difference in etch resistance between the first and second domains is small.
摘要翻译： 衬底上的光刻方法使用沉积在衬底上的自组装聚合物（SAP）层，其中第一和第二畴以整个层的图案排列。 平坦化层形成在SAP之上，并且显影蚀刻被施加以在第二域上基本上去除平坦化层的一部分，留下平坦化层的盖基本覆盖第一域。 然后通过穿透蚀刻从表面除去未封端的第二结构域，留下封盖的第一结构域作为表面上的图案特征。 然后可以使用转移蚀刻来使用封盖的第一结构域将图案特征转移到衬底。 封盖允许除去第二结构域，例如即使当第一和第二畴之间的耐蚀刻性差异小时，也不会对剩余的第一区域的横向特征宽度过度损失。
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8.发明申请METHOD FOR PROVIDING AN ORDERED LAYER OF SELF-ASSEMBLABLE POLYMER FOR USE IN LITHOGRAPHY 有权用于提供自组装聚合物的订购层的方法用于LITHOGRAPHY公开(公告)号：US20130034811A1
公开(公告)日：2013-02-07
申请号：US13640293
申请日：2011-01-19
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A method for providing an ordered polymer layer at a surface of a substrate includes depositing a self-assemblable polymer layer directly onto a primer layer on a substrate to provide an interface between the self-assemblable polymer layer and the primer layer, and treating the self-assemblable polymer layer to provide self-assembly into an ordered polymer layer, such as a block copolymer, having first and second domain types at the interface. The primer layer is adapted to improve its chemical affinity to each domain type at the interface, in response to the presence of the respective domain type in the self-assembled polymer at the interface during the self-assembly of the self-assemblable polymer layer into the ordered polymer layer. This may lead to reduction in defect levels and/or improved persistence length for the ordered polymer layer. The method may be useful for forming resist layers for use in device lithography.
摘要翻译： 在衬底的表面提供有序聚合物层的方法包括将可自组装的聚合物层直接沉积在基底上的底漆层上，以提供可自组装的聚合物层和底漆层之间的界面，以及处理自身 可以将聚合物层自组装成有序聚合物层，例如在界面处具有第一和第二域类型的嵌段共聚物。 响应于在自组装聚合物层的自组装期间在界面处的自组装聚合物中存在相应的畴型，引物层适于改善其在界面处对每种畴型的化学亲和力 有序聚合物层。 这可能导致有序聚合物层的缺陷水平和/或改善的持续长度的降低。 该方法可用于形成用于器件光刻的抗蚀剂层。
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公开(公告)号：US08921032B2
公开(公告)日：2014-12-30
申请号：US13700703
申请日：2011-04-20
CPC分类号： C08F293/00 , B05D5/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C08F297/04 , G03F7/0002 , G03F7/004 , G03F7/165 , G03F7/26
摘要： A self-assemblable polymer is disclosed, having first and second molecular configurations with the first molecular configuration has a higher Flory Huggins parameter for the self-assemblable polymer than the second molecular configuration, and the self-assemblable polymer is configurable from the first molecular configuration to the second molecular configuration, from the second molecular configuration to the first molecular configuration, or both, by the application of a stimulus. The polymer is of use in a method for providing an ordered, periodically patterned layer of the polymer on a substrate, by ordering and annealing the polymer in its second molecular configuration and setting the polymer when it is in the first molecular configuration. The second molecular configuration provides better ordering kinetics and permits annealing of defects near its order/disorder transition temperature, while the first molecular configuration, with a higher order/disorder transition temperature, provides low line edge/width roughness for the pattern formed on setting.
摘要翻译： 公开了具有第一和第二分子构型的自组装聚合物，其具有第一分子构型，其具有比第二分子构型更高的可自组装聚合物的Flory Huggins参数，并且可自组装聚合物可从第一分子构型 到第二分子构型，从第二分子构型到第一分子构型，或两者都通过施加刺激。 聚合物可用于通过在其第二分子构型中排列和退火聚合物并在聚合物处于第一分子构型时设置聚合物，从而在基底上提供聚合物的有序周期性图案化层的方法。 第二种分子结构提供更好的排序动力学，并允许在其顺序/无序转变温度附近的缺陷退火，而具有较高阶/无序转变温度的第一分子构型为设置上形成的图案提供了低的线边缘/宽度粗糙度。
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公开(公告)号：US20130140272A1
公开(公告)日：2013-06-06
申请号：US13816720
申请日：2011-07-21
IPC分类号： B44C1/22
CPC分类号： B44C1/227 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , G03F7/0002 , H01L21/0337
摘要： A method of lithography on a substrate uses a self-assembled polymer (SAP) layer deposited on the substrate, with first and second domains arranged in a pattern across the layer. A planarization layer is formed over the SAP and a development etch applied to substantially remove a portion of the planarization layer over the second domain leaving a cap of the planarization layer substantially covering the first domain. The uncapped second domain is then removed from the surface by a breakthrough etch leaving the capped first domain as a pattern feature on the surface. A transfer etch may then be used to transfer the pattern feature to the substrate using the capped first domain. The capping allows the second domain to be removed, e.g., without excessive loss of lateral feature width for the remaining first domain, even when the difference in etch resistance between the first and second domains is small.
摘要翻译： 衬底上的光刻方法使用沉积在衬底上的自组装聚合物（SAP）层，其中第一和第二畴以整个层的图案排列。 平坦化层形成在SAP之上，并且显影蚀刻被施加以在第二域上基本上去除平坦化层的一部分，留下平坦化层的盖基本覆盖第一域。 然后通过穿透蚀刻从表面除去未封端的第二结构域，留下封盖的第一结构域作为表面上的图案特征。 然后可以使用转移蚀刻来使用封盖的第一结构域将图案特征转移到衬底。 封盖允许除去第二结构域，例如，即使当第一和第二畴之间的耐蚀刻性差异小时，也不会对剩余的第一区域的横向特征宽度过度损失。
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