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公开(公告)号:US4990459A
公开(公告)日:1991-02-05
申请号:US339825
申请日:1989-04-18
申请人: Ayako Maeda , Mokuji Kageyama , Shintaro Yoshii , Masanobu Ogino
发明人: Ayako Maeda , Mokuji Kageyama , Shintaro Yoshii , Masanobu Ogino
CPC分类号: G01N1/4055 , G01N1/02 , G01N31/00 , G01N2001/028 , Y10T436/25 , Y10T436/25375 , Y10T436/255
摘要: A drop which is hydrophobic to the surface of an object to be measured is dropped on the surface of the object and moved so as to be brought into contact with the overall surface of the object to be measured. After the movement, the drop is recovered and analyzed by chemical analysis to measure the kind of element and content of an impurity adsorbed on the surface of the object to be measured.
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公开(公告)号:US4837610A
公开(公告)日:1989-06-06
申请号:US147605
申请日:1988-01-22
IPC分类号: H01L21/28 , H01L21/316 , H01L29/51
CPC分类号: H01L21/28211 , H01L21/316 , H01L29/51
摘要: A semiconductor device is provided having as an insulating oxide film a silicon oxide film containing a metal, such as iron or chromium, of an average concentration of 1.times.10.sup.16 atoms/cm.sup.3 to 1.times.10.sup.19 atoms/cm.sup.3 which can be readily trapped therein.
摘要翻译: 提供半导体器件,其具有作为绝缘氧化膜的含有平均浓度为1×10 16原子/ cm 3至1×10 19原子/ cm 3的金属(例如铁或铬)的氧化硅膜,其可容易地被捕获。
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公开(公告)号:US4980300A
公开(公告)日:1990-12-25
申请号:US275864
申请日:1988-11-25
申请人: Moriya Miyashita , Shintaro Yoshii , Keiko Sakuma
发明人: Moriya Miyashita , Shintaro Yoshii , Keiko Sakuma
IPC分类号: H01L21/00 , H01L21/304 , H01L21/322
CPC分类号: H01L21/67023 , H01L21/3221 , Y10S438/974
摘要: When a surface of semiconductor wafer is treated for gettering, ultrasonic waves are caused to propagate along the surface of the semiconductor wafer, through pure water. Mechanical damages are formed on the surface of the semiconductor wafer along which the ultrasonic waves propagated, the damages serving as a back side damage.
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