公开(公告)号：US5271274A

公开(公告)日：1993-12-21

申请号：US745005

申请日：1991-08-14

申请人： B. T. Khuri-Yakub ,  Sanjay Bhardwaj ,  Krishna Saraswat

发明人： B. T. Khuri-Yakub ,  Sanjay Bhardwaj ,  Krishna Saraswat

IPC分类号： G01B17/02 ,  G01N29/07 ,  G01N29/12 ,  G01N29/10 ,  G01N29/24

CPC分类号： G01N29/12 ,  G01B17/025 ,  G01N29/07 ,  G01N2291/0231 ,  G01N2291/0237 ,  G01N2291/02854 ,  G01N2291/044 ,  G01N2291/101

摘要： A system and method is disclosed for measuring thickness of at least one film on a substrate by propagating an acoustic wave through the film on a substrate such that echo waves are generated and received by a transducer. An output signal is generated and processed to give a thickness value. The thickness valve is obtained from the time lapse between the propagated wave and receipt of the echo wave; by the frequency domain of the echo wave; or the phase of the echo wave.

摘要翻译： 公开了一种系统和方法，用于通过在基板上传播声波通过膜，从而通过传感器产生和接收回波来测量衬底上的至少一个膜的厚度。 产生并处理输出信号以给出厚度值。 厚度阀是从传播波与回波之间的时间间隔获得的; 通过回波的频域; 或回波的相位。

公开(公告)号：US20060019466A1

公开(公告)日：2006-01-26

申请号：US11188140

申请日：2005-07-22

申请人： Ammar Nayfeh ,  Chi On Chui ,  Krishna Saraswat ,  Takao Yonehara

发明人： Ammar Nayfeh ,  Chi On Chui ,  Krishna Saraswat ,  Takao Yonehara

IPC分类号： H01L21/30

CPC分类号： H01L29/518 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/2807 ,  H01L21/28255 ,  H01L29/16 ,  H01L29/165 ,  H01L29/513 ,  H01L29/66575 ,  H01L29/94

摘要： Germanium circuit-type structures are facilitated. In one example embodiment, a multi-step growth and anneal process is implemented to grow Germanium (Ge) containing material, such as heteroepitaxial-Germanium, on a substrate including Silicon (Si) or Silicon-containing material. In certain applications, defects are generally confined near a Silicon/Germanium interface, with defect threading to an upper surface of the Germanium containing material generally being inhibited. These approaches are applicable to a variety of devices including Germanium MOS capacitors, pMOSFETs and optoelectronic devices.

公开(公告)号：US07968434B2

公开(公告)日：2011-06-28

申请号：US12271488

申请日：2008-11-14

申请人： Munehiro Tada ,  Krishna Saraswat

发明人： Munehiro Tada ,  Krishna Saraswat

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02573 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/28255 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/66643 ,  H01L29/7839 ,  H01L29/785

摘要： This invention provides a method of forming semiconductor films on dielectrics at temperatures below 400° C. Semiconductor films are required for thin film transistors (TFTs), on-chip sensors, on-chip micro-electromechanical systems (MEMS) and monolithic 3D-integrated circuits. For these applications, it is advantageous to form the semiconductor films below 400° C. because higher temperatures are likely to destroy any underlying devices and/or substrates. This invention successfully achieves low temperature growth of germanium films using diboran. First, diboran gas is supplied into a reaction chamber at a temperature below 400° C. The diboran decomposes itself at the given temperature and decomposed boron is attached to the surface of a dielectric, for e.g., SiO2, forming a nucleation site and/or a seed layer. Second, source gases for semiconductor film formation, for e.g., SiH4, GeH4, etc., are supplied into the chamber, thereby forming a semiconductor film.

摘要翻译： 本发明提供了一种在低于400℃的温度下在电介质上形成半导体膜的方法。薄膜晶体管（TFT），片上传感器，片上微机电系统（MEMS）和单片3D集成 电路。 对于这些应用，将半导体膜形成在低于400℃是有利的，因为更高的温度可能破坏任何下面的器件和/或衬底。 本发明成功地实现了使用二硼烷的锗膜的低温生长。 首先，在低于400℃的温度下将二硼烷气体供应到反应室中。二硼烷在给定温度下自身分解，并且分解的硼附着到电介质的表面，例如SiO 2，形成成核位置和/或 种子层。 其次，将例如SiH 4，GeH 4等的半导体膜形成用源气体供给到室内，形成半导体膜。

公开(公告)号：US20070170541A1

公开(公告)日：2007-07-26

申请号：US10404876

申请日：2003-03-31

申请人： Chi Chui ,  Krishna Saraswat ,  Baylor Triplett ,  Paul McIntyre

发明人： Chi Chui ,  Krishna Saraswat ,  Baylor Triplett ,  Paul McIntyre

IPC分类号： H01L29/00

CPC分类号： H01L21/28255 ,  H01L29/513 ,  H01L29/517 ,  H01L29/785 ,  H01L29/78642 ,  H01L29/78684 ,  H01L29/78687

摘要： Excellent capacitor-voltage characteristics with near-ideal hysteresis are realized in a capacitive-like structure that uses an electrode substrate-type material with a high-k dielectric layer having a thickness of a few-to-several Angstroms capacitance-based SiO2 equivalent (“TOx,Eq”). According to one particular example embodiment, a semiconductor device structure has an electrode substrate-type material having a Germanium-rich surface material. The electrode substrate-type material is processed to provide this particular electrode surface material in a form that is thermodynamically stable with a high-k dielectric material. A dielectric layer is then formed over the electrode surface material with the high-k dielectric material at a surface that faces, lies against and is thermodynamically stable with the electrode surface material.

摘要翻译： 具有接近理想滞后的良好的电容器电压特性在电容式结构中实现，其使用具有厚度为几至几埃电容的SiO 2等价物（“T Ox”，Eq ）。 根据一个特定示例性实施例，半导体器件结构具有具有富锗表面材料的电极基底型材料。 对电极基板型材料进行加工，以高k电介质材料的热力学稳定形式提供这种特定的电极表面材料。 然后在电极表面材料上形成介电层，其中高k电介质材料在与电极表面材料相对的位置处于表面，并且与电极表面材料具有热力学稳定性。

公开(公告)号：US4715937A

公开(公告)日：1987-12-29

申请号：US859943

申请日：1986-05-05

申请人： Mehrdad M. Moslehi ,  Chi Y. Fu ,  Krishna Saraswat

发明人： Mehrdad M. Moslehi ,  Chi Y. Fu ,  Krishna Saraswat

IPC分类号： C23C8/36 ,  C23C8/24

CPC分类号： C23C8/36

摘要： A process utilizing a microwave discharge technique for performing direct nitridation of silicon at a relatively low growth temperature of no more than about 500.degree. C. in a nitrogen plasma ambient without the presence of hydrogen or a fluorine-containing species. Nitrogen is introduced through a quartz tube. A silicon rod connected to a voltage source is placed in the quartz tube and functions as an anodization electrode. The silicon wafer to be treated is connected to a second voltage source and functions as the second electrode of the anodizing circuit. A small DC voltage is applied to the silicon wafer to make the plasma current at the wafer and the silicon rod equal and minimize contamination of the film.

摘要翻译： 一种利用微波放电技术在不存在氢或含氟物质的氮等离子体环境中，在不超过约500℃的较低生长温度下直接氮化硅的方法。 通过石英管引入氮。 连接到电压源的硅棒放置在石英管中，用作阳极氧化电极。 要处理的硅晶片连接到第二电压源并用作阳极氧化电路的第二电极。 对硅晶片施加小的DC电压，以使晶片和硅棒之间的等离子体电流相等并使膜的污染最小化。