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    Method of forming of a semiconductor film, method of manufacture of a semiconductor device and a semiconductor device
    1.
    发明授权
    Method of forming of a semiconductor film, method of manufacture of a semiconductor device and a semiconductor device 有权
    半导体膜的形成方法，半导体装置的制造方法以及半导体装置

    公开(公告)号：US07968434B2

    公开(公告)日：2011-06-28

    申请号：US12271488

    申请日：2008-11-14

    申请人： Munehiro Tada ,  Krishna Saraswat

    发明人： Munehiro Tada ,  Krishna Saraswat

    IPC分类号： H01L21/20 ,  H01L21/36

    CPC分类号： H01L21/02573 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/28255 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/66643 ,  H01L29/7839 ,  H01L29/785

    摘要： This invention provides a method of forming semiconductor films on dielectrics at temperatures below 400° C. Semiconductor films are required for thin film transistors (TFTs), on-chip sensors, on-chip micro-electromechanical systems (MEMS) and monolithic 3D-integrated circuits. For these applications, it is advantageous to form the semiconductor films below 400° C. because higher temperatures are likely to destroy any underlying devices and/or substrates. This invention successfully achieves low temperature growth of germanium films using diboran. First, diboran gas is supplied into a reaction chamber at a temperature below 400° C. The diboran decomposes itself at the given temperature and decomposed boron is attached to the surface of a dielectric, for e.g., SiO2, forming a nucleation site and/or a seed layer. Second, source gases for semiconductor film formation, for e.g., SiH4, GeH4, etc., are supplied into the chamber, thereby forming a semiconductor film.

    摘要翻译： 本发明提供了一种在低于400℃的温度下在电介质上形成半导体膜的方法。薄膜晶体管（TFT），片上传感器，片上微机电系统（MEMS）和单片3D集成 电路。 对于这些应用，将半导体膜形成在低于400℃是有利的，因为更高的温度可能破坏任何下面的器件和/或衬底。 本发明成功地实现了使用二硼烷的锗膜的低温生长。 首先，在低于400℃的温度下将二硼烷气体供应到反应室中。二硼烷在给定温度下自身分解，并且分解的硼附着到电介质的表面，例如SiO 2，形成成核位置和/或 种子层。 其次，将例如SiH 4，GeH 4等的半导体膜形成用源气体供给到室内，形成半导体膜。

    Semiconductor device and operation method for same
    3.
    发明授权
    Semiconductor device and operation method for same 有权
    半导体器件及其操作方法相同

    公开(公告)号：US09059082B2

    公开(公告)日：2015-06-16

    申请号：US13704225

    申请日：2011-06-09

    申请人： Munehiro Tada ,  Makoto Miyamura ,  Hiromitsu Hada

    发明人： Munehiro Tada ,  Makoto Miyamura ,  Hiromitsu Hada

    IPC分类号： H01L29/06 ,  H01L27/24 ,  G11C13/00 ,  H01L27/10 ,  H01L45/00

    CPC分类号： H01L27/2436 ,  G11C13/0007 ,  G11C13/0014 ,  G11C13/003 ,  G11C13/0069 ,  G11C2013/0073 ,  H01L27/101 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/14 ,  H01L45/146

    摘要： A semiconductor device includes a first switching element, a second switching element, and at least one third switching element; wherein the third switching element includes a first terminal and a second terminal, wherein each of the first switching element and the second switching element includes an ion conductor, a first electrode which is disposed so as to have contact with the ion conductor and supplies metal ions to the ion conductor, and a second electrode which is disposed so as to have contact with the ion conductor and is less susceptible to ionization than the first electrode; and wherein (a) the first electrode of the first switching element and the first electrode of the second switching element are electrically connected each other, and the first terminal of the third switching element is electrically connected to only the first electrodes which are electrically connected each other or (b) the second electrode of the first switching element and the second electrode of the second switching element are electrically connected each other, and the first terminal of the third switching element is electrically connected to only the second electrodes which are electrically connected each other.

    摘要翻译： 半导体器件包括第一开关元件，第二开关元件和至少一个第三开关元件; 其中所述第三开关元件包括第一端子和第二端子，其中所述第一开关元件和所述第二开关元件中的每一个包括离子导体，所述第一电极被设置为与所述离子导体接触并提供金属离子 以及第二电极，其设置成与离子导体接触并且比第一电极不易电离; 并且其中（a）第一开关元件的第一电极和第二开关元件的第一电极彼此电连接，并且第三开关元件的第一端子仅电连接到每个电连接的第一电极 另一个或（b）第一开关元件的第二电极和第二开关元件的第二电极彼此电连接，并且第三开关元件的第一端子仅电连接到每个电连接的第二电极 其他。

    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20130181180A1

    公开(公告)日：2013-07-18

    申请号：US13824098

    申请日：2011-09-20

    申请人： Munehiro Tada ,  Makoto Miyamura ,  Hiromitsu Hada

    发明人： Munehiro Tada ,  Makoto Miyamura ,  Hiromitsu Hada

    IPC分类号： H01L45/00

    CPC分类号： H01L45/04 ,  G11C13/0007 ,  G11C13/003 ,  G11C13/0069 ,  G11C13/04 ,  G11C2013/0073 ,  G11C2213/56 ,  G11C2213/73 ,  G11C2213/75 ,  H01L27/101 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/146

    摘要： A semiconductor device according to the present invention includes: an unit element which includes a first switch and a second switch, wherein each of the first switch and the second switch includes an electrical resistance changing layer whose state of electrical resistance is changed according to a polarity of an applied voltage, and each of the first switch and the second switch has two electrodes, and wherein one electrode of the first switch and one electrode of the second switch are connected each other to form a common node, and the other electrode of the first switch forms a first node, and the other electrode of the second switch forms a second node; a first wiring which is connected with the first node and forms a signal transmission line; and a second wiring which is connected with the second node and is connected with the first wiring through the unit element.

    摘要翻译： 根据本发明的半导体器件包括：单元，其包括第一开关和第二开关，其中第一开关和第二开关中的每一个包括电阻变化层，其电阻状态根据极性而改变 并且第一开关和第二开关中的每一个具有两个电极，并且其中第一开关的一个电极和第二开关的一个电极彼此连接以形成公共节点，而另一个电极 第一开关构成第一节点，第二开关的另一个电极形成第二节点; 第一布线，与第一节点连接并形成信号传输线; 以及与第二节点连接并且通过单元元件与第一布线连接的第二布线。

    Semiconductor device and its manufacturing method
    10.
    发明申请
    Semiconductor device and its manufacturing method 有权
    半导体器件及其制造方法

    公开(公告)号：US20050253272A1

    公开(公告)日：2005-11-17

    申请号：US10509898

    申请日：2003-03-31

    申请人： Hiroto Ohtake ,  Munehiro Tada ,  Yoshimichi Harada ,  Ken'ichiro Hijioka ,  Shinobu Saitoh ,  Yoshihiro Hayashi

    发明人： Hiroto Ohtake ,  Munehiro Tada ,  Yoshimichi Harada ,  Ken'ichiro Hijioka ,  Shinobu Saitoh ,  Yoshihiro Hayashi

    IPC分类号： H01L21/311 ,  H01L21/768 ,  H01L21/4763

    CPC分类号： H01L21/76831 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76813

    摘要： A technique is provided for protecting an interlayer insulating film formed of an organic low dielectric constant material from any damage applied in a semiconductor process, and for attaining the decrease leak current in the interlayer insulating film, resulting in the improvement of reliability of a semiconductor device. The semiconductor device according to the present invention has an organic insulating films (5, 26, 28) having openings. The organic insulating films (5, 26, 28) have modified portions (5a, 26a, 28a) facing the openings. The modified portions (5a, 26a, 28a) contains fluorine atoms and nitrogen atoms. The concentration of the fluorine atoms in the modified portions (5a, 26a, 28a) is lower than the concentration of the nitrogen atoms. The above-mentioned modified layers (5a, 26a, 28a) protect the semiconductor device from the damage applied in the semiconductor process, while suppressing the corrosion of the conductors embedded in the openings.

    摘要翻译： 提供了一种用于保护由有机低介电常数材料形成的层间绝缘膜的技术，用于在半导体工艺中施加的任何损坏，并且为了获得在层间绝缘膜中的减小的漏电流，从而提高半导体器件的可靠性 。 根据本发明的半导体器件具有具有开口的有机绝缘膜（5,26,28）。 有机绝缘膜（5,26,28）具有面向开口的变形部分（5a，26a，28a）。 改性部分（5a，26a，28a）含有氟原子和氮原子。 改性部分（5a，26a，28a）中氟原子的浓度低于氮原子的浓度。 上述改性层（5a，26a，28a）保护半导体器件免受在半导体工艺中的损坏，同时抑制嵌入在开口中的导体的腐蚀。