公开(公告)号：US09742445B1

公开(公告)日：2017-08-22

申请号：US15200204

申请日：2016-07-01

Applicant: BAE SYSTEMS Information and Electronic Systems Integration Inc.

Inventor： Robert Actis ,  Robert J. Lender, Jr. ,  Jared P. Majcher ,  John R. Muir ,  Edwin C. Powers

IPC: H01Q11/12 ,  H04B1/04 ,  H03F3/19 ,  H01L25/065 ,  H01L23/66 ,  H01L23/00 ,  H03F3/21 ,  H01L23/367 ,  H01L23/373 ,  H01L23/02

CPC classification number: H04B1/04 ,  H01L23/02 ,  H01L23/3675 ,  H01L23/3732 ,  H01L23/3736 ,  H01L23/66 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L25/0655 ,  H01L2223/6644 ,  H01L2223/6683 ,  H01L2224/2745 ,  H01L2224/27462 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/32245 ,  H01L2224/32502 ,  H01L2224/83101 ,  H01L2224/83447 ,  H01L2224/83805 ,  H01L2924/01006 ,  H01L2924/01042 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/1033 ,  H01L2924/1423 ,  H01L2924/1426 ,  H01L2924/15747 ,  H03F3/19 ,  H03F3/195 ,  H03F3/211 ,  H03F3/245 ,  H03F3/68 ,  H03F2200/111 ,  H03F2200/411 ,  H03F2200/429 ,  H03F2200/451 ,  H03F2200/552 ,  H03F2203/21106 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/0105

Abstract: A solid-state amplifier architecture is disclosed. In some embodiments, the disclosed architecture may include first and second channel chipsets configured to amplify either the entire instantaneous frequency band of a radio frequency (RF) input signal or, respectively, sub-bands thereof, which may be divided proportionally between the two chipsets. In some cases, the chipsets may be configured to amplify frequencies in excess of the entire K-band and Ka-band frequencies simultaneously. In some cases, the architecture may be configured to address a signal received, for instance, from an electronic warfare (EW) system to a log amplifier stage configured to output a signal to the EW system, in response to which the EW system may generate a RF signal for amplification by the architecture for transmission. To facilitate heat dissipation, the architecture may be coupled, in part or in whole, with a thermally conductive carrier, optionally with an intervening diamond heat spreader layer.

公开(公告)号：US09537605B1

公开(公告)日：2017-01-03

申请号：US14806206

申请日：2015-07-22

Applicant: BAE Systems Information and Electronic Systems Integration Inc.

Inventor： Robert Actis ,  Robert J. Lender, Jr. ,  Virginia W. Murray ,  Edwin C. Powers

IPC: H04K3/00 ,  H04B1/04

CPC classification number: H04K3/62 ,  H04B1/04 ,  H04K2203/24

Abstract: An ultra-wideband high-power solid-state transmitter for electronic warfare applications which includes a plurality of wideband Gallium-Nitride (GaN) semiconductor monolithic-microwave integrated circuits (MMICs), a spatial power combiner to sum the aggregate contribution of the MMICs, a wide bandwidth small form factor driver amplifier module to supply the required gain in the transmitter, and a thermal management system.

Abstract translation: 一种用于电子战应用的超宽带大功率固态发射机，其包括多个宽带镓氮化物（GaN）半导体单片微波集成电路（MMIC），空间功率组合器，用于对MMIC的总体贡献进行求和， 宽带小尺寸驱动放大器模块，用于提供发射器所需的增益，以及热管理系统。