Abstract:
Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 (B) one or more polymers selected from the group consisting of N-vinyl-homopolymers and N-vinyl copolymers (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.
Abstract:
Described is a use of a chemical-mechanical polishing (CMP) composition for polishing a substrate or layer containing one or more lll-V materials, wherein the chemical-mechanical polishing (CMP) composition comprises the following components: (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 (B) one or more constituents selected from the group consisting of (i) substituted and unsubstituted triazoles not having an aromatic ring annealed to the triazol ring, (ii) benzimidazole, (iii) chelating agents selected from the group consisting of amino acids with two or more carboxyl groups, aliphatic carboxylic acids, and the respective salts thereof, and (iv) homopolymers and copolymers of acrylic acid, and the respective salts thereof, (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.
Abstract:
Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 (B) one or more polyethylene imines (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.
Abstract:
Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 (B) N,N,N′,N′-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.
Abstract:
Described is a chemical-mechanical polishing (CMP) composition comprising the following components:(A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6(B) N,N,N′,N′-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid(C) water(D) optionally one or more further constituents,wherein the pH of the composition is in the range of from 2 to 6.
Abstract:
The present invention relates to sulfur-carbon composite materials comprising(A) at least one carbon composite material comprising (a) a carbonization product of at least one carbonaceous starting material, incorporating (aa) particles of at least one electrically conductive additive, the particles having an aspect ratio of at least 10, and (B) elemental sulfur. In addition, the present invention also relates to a process for producing inventive sulfur-carbon composite materials, to cathode materials for electrochemical cells comprising inventive sulfur-carbon composite materials, to corresponding electrochemical cells and to the use of carbon composite materials for production of electrochemical cells.