公开(公告)号：US20220064485A1

公开(公告)日：2022-03-03

申请号：US17312807

申请日：2019-12-11

Applicant: BASF SE

Inventor： Haci Osman GUEVENC ,  Michael LEUTER ,  WEI Taoyuan ,  Wei Lan CHIU ,  Reza M. GOLZARIAN ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: C09G1/02 ,  H01L21/321

Abstract: The presently claimed invention relates to a chemical-mechanical polishing (CMP) composition and chemical-mechanical polishing (CMP) methods. The presently claimed invention particularly relates to a composition and process for chemical-mechanical polishing of substrates containing copper and ruthenium, specifically, semiconductor substrates containing copper and ruthenium.

公开(公告)号：US20180230333A1

公开(公告)日：2018-08-16

申请号：US15751612

申请日：2016-08-09

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Max SIEBERT ,  Yongqing LAN ,  Michael LAUTER ,  Sheik Ansar USMAN IBRAHIM ,  Reza M. GOLZARIAN ,  Te Yu WEI ,  Haci Osman GUEVENC ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: C09G1/02 ,  H01L21/461 ,  H01L21/321

CPC classification number: C09G1/02 ,  H01L21/3212 ,  H01L21/461

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy and (iii) Ti N and/or TaN, wherein the CMP composition (Q) comprises (E) Inorganic particles (F) at least one organic compound comprising an amino-group and an acid group (Y), wherein said compound comprises n amino groups and at least n+1 acidic protons, wherein n is a integer≥1. (G) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the respective CMP composition, (H) an aqueous medium wherein the CMP composition (Q) has a pH of more than 6 and less than 9.

公开(公告)号：US20220056307A1

公开(公告)日：2022-02-24

申请号：US17312821

申请日：2019-12-11

Applicant: BASF SE

Inventor： Haci Osman GUEVENC ,  Michael LAUTER ,  Te Yu WEI ,  Wei Lan CHIU ,  Reza M. GOLZARIAN ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: C09G1/02 ,  H01L21/321

Abstract: The presently claimed invention relates to a chemical-mechanical polishing (CMP) composition and chemical-mechanical polishing (CMP) methods. The presently claimed invention particularly relates to a composition and process for chemical-mechanical polishing of substrates containing copper and ruthenium, specifically, semiconductor substrates containing copper and ruthenium.

公开(公告)号：US20210102093A1

公开(公告)日：2021-04-08

申请号：US17123685

申请日：2020-12-16

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Max SIEBERT ,  Yongqing LAN ,  Michael LAUTER ,  Sheik USMAN IBRAHIM ,  Reza M. GOLZARIAN ,  Te Yu WEI ,  Haci Osman GUEVENC ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: C09G1/02 ,  C09G1/04 ,  C09K3/14 ,  H01L21/306 ,  H01L21/321 ,  H01L21/461

Abstract: A chemical mechanical polishing composition may be used for chemical mechanical polishing of a substrate including (i) cobalt and/or (ii) a cobalt alloy and (iii) TiN and/or TaN, wherein the CMP composition includes (A) inorganic particles (B) at least one organic compound including an amino-group and an acid group, the compound including n amino groups and at least n+1 acidic protons, a being a integer ≥1; (C) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the MP composition; and (D) an aqueous medium. The CMP composition may have a pH of more than 6 and less than 9.