公开(公告)号：US20170362464A1

公开(公告)日：2017-12-21

申请号：US15538851

申请日：2015-12-22

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Max SIEBERT ,  Yongqing LAN ,  Michael LAUTER ,  Sheik Ansar USMAN IBRAHIM ,  Reza GOLZARIAN ,  Haci Osman GUEVENC ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: C09G1/02 ,  B24B37/20 ,  C09K3/14 ,  C23F3/06 ,  H01L21/321 ,  H01L21/768

CPC classification number: C09G1/02 ,  B24B37/20 ,  C09K3/1409 ,  C23F3/06 ,  H01L21/302 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/32115 ,  H01L21/3212 ,  H01L21/461 ,  H01L21/463 ,  H01L21/7684

Abstract: A chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) containing (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) contains: (A) Inorganic particles, (B) a substituted aromatic compound with at least one carboxylic acid function as corrosion inhibitor, (C) at least one amino acid, (D) at least one oxidizer, (E) an aqueous medium, wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：US20200294813A1

公开(公告)日：2020-09-17

申请号：US16094381

申请日：2016-04-27

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Max SIEBERT ,  Yongqing LAN ,  Michael LAUTER ,  Sheik Ansar USMAN IBRAHIM ,  Reza M GOLZARIAN ,  Haci Osman GUEVENC ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: H01L21/321 ,  C09K3/14 ,  C09G1/02

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) an anionic surfactant of the general formula (I) R-S wherein R is C5-C20-alkyl, C5-C20-alkenyl, C5-C20-alkylacyl or C5-C20-alkenylacyl and S is a sulfonic acid derivative, an amino acid derivative or a phosphoric acid derivative or salts or mixtures thereof (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：US20160200943A1

公开(公告)日：2016-07-14

申请号：US14905703

申请日：2014-07-01

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Martin KALLER ,  Michael LAUTER ,  Yuzhuo LI ,  Andreas KLIPP

IPC: C09G1/02 ,  H01L21/321

CPC classification number: C09K3/1463 ,  C09G1/02 ,  H01L21/3212

Abstract: A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.

Abstract translation: 提供化学机械抛光（CMP）组合物，其包含（A）一种或多种选自作为防腐剂的苯并三唑衍生物的化合物和（B）无机颗粒，有机颗粒或其复合物或混合物。 本发明还涉及使用选自苯并三唑衍生物的某些化合物作为缓蚀剂，特别是用于提高化学机械抛光（CMP）组合物从用于制造钽酸铅的基材中除去钽或氮化钽的选择性 在所述衬底上存在铜的半导体器件。

公开(公告)号：US20140011361A1

公开(公告)日：2014-01-09

申请号：US13933427

申请日：2013-07-02

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Yuzhou LI ,  Michael LAUTER ,  Wei Lan CHIU

IPC: C09G1/02 ,  H01L21/306

CPC classification number: C09G1/02 ,  H01L21/30625 ,  H01L21/3212

Abstract: A chemical mechanical polishing (CMP) composition (Q) comprising (A) Inorganic particles, organic particles, or a mixture or composite thereof, wherein the particles are cocoon-shaped (B) a non-ionic surfactant, (C) a carbonate or hydrogen carbonate salt, (D) an alcohol, and (M) an aqueous medium.

Abstract translation: 化学机械抛光（CMP）组合物（Q），其包含（A）无机颗粒，有机颗粒或其混合物或复合物，其中所述颗粒是茧形的（B）非离子表面活性剂，（C）碳酸盐或 碳酸氢盐，（D）醇和（M）水性介质。

公开(公告)号：US20200262965A1

公开(公告)日：2020-08-20

申请号：US16761947

申请日：2018-10-30

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Matthias MAIER ,  Tim MEISENZAHL

IPC: C08G18/48 ,  C09D175/08 ,  C08G18/28 ,  C08G18/20

Abstract: The presently claimed invention relates to a composition comprising polyurethane polymer and diluents, which is used as an additive in coating formulations, in particular water-borne paint and coating formulations, for reducing the effect of the viscosity loss caused by the addition of colorants/pigment pastes thereby improving the viscosity stability in tinted coating formulations as well as the method for preparing the composition.

公开(公告)号：US20180230333A1

公开(公告)日：2018-08-16

申请号：US15751612

申请日：2016-08-09

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Max SIEBERT ,  Yongqing LAN ,  Michael LAUTER ,  Sheik Ansar USMAN IBRAHIM ,  Reza M. GOLZARIAN ,  Te Yu WEI ,  Haci Osman GUEVENC ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: C09G1/02 ,  H01L21/461 ,  H01L21/321

CPC classification number: C09G1/02 ,  H01L21/3212 ,  H01L21/461

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy and (iii) Ti N and/or TaN, wherein the CMP composition (Q) comprises (E) Inorganic particles (F) at least one organic compound comprising an amino-group and an acid group (Y), wherein said compound comprises n amino groups and at least n+1 acidic protons, wherein n is a integer≥1. (G) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the respective CMP composition, (H) an aqueous medium wherein the CMP composition (Q) has a pH of more than 6 and less than 9.

公开(公告)号：US20180016468A1

公开(公告)日：2018-01-18

申请号：US15538313

申请日：2015-12-16

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Max SIEBERT ,  Yongqing LAN ,  Michael LAUTER ,  Sheik Ansar USMAN IBRAHIM ,  Reza GOLZARIAN ,  Haci Osman GUEVENC ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: C09G1/02 ,  B24B37/04 ,  C09K3/14 ,  H01L21/321

Abstract: Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt and/or co-balt alloy comprising substrates Abstract Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a substituted tetrazole derivative of the general formula (I), wherein R1 is H, hydroxy, alkyl, aryl, alkylaryl, amino, carboxyl, alkylcarboxyl, thio or alkylthio. (C) at least one amino acid (D) at least one oxidizer, (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：US20210102093A1

公开(公告)日：2021-04-08

申请号：US17123685

申请日：2020-12-16

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Max SIEBERT ,  Yongqing LAN ,  Michael LAUTER ,  Sheik USMAN IBRAHIM ,  Reza M. GOLZARIAN ,  Te Yu WEI ,  Haci Osman GUEVENC ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: C09G1/02 ,  C09G1/04 ,  C09K3/14 ,  H01L21/306 ,  H01L21/321 ,  H01L21/461

Abstract: A chemical mechanical polishing composition may be used for chemical mechanical polishing of a substrate including (i) cobalt and/or (ii) a cobalt alloy and (iii) TiN and/or TaN, wherein the CMP composition includes (A) inorganic particles (B) at least one organic compound including an amino-group and an acid group, the compound including n amino groups and at least n+1 acidic protons, a being a integer ≥1; (C) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the MP composition; and (D) an aqueous medium. The CMP composition may have a pH of more than 6 and less than 9.

公开(公告)号：US20170158913A1

公开(公告)日：2017-06-08

申请号：US15325464

申请日：2015-07-14

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Max SIEBERT ,  Yongqing LAN ,  Michael LAUTER ,  Haci Osman GUEVENC ,  Julian PROELSS ,  Sheik Ansar USMAN IBRAHIM ,  Reza GOLZARIAN

IPC: C09G1/04

Abstract: A chemical mechanical polishing (CMP) composition (Q) comprising (A) Colloidal or fumed inorganic particles (A) or a mixture thereof in a total amount of from 0.0001 to 2.5 wt.-% based on the total weight of the respective CMP composition (B) at least one amino acid in a total amount of from 0.2 to 1 wt.-% based on the total weight of the respective CMP composition (C) at least one corrosion inhibitor in a total amount of from 0.001 to 0.02 wt.-% based on the total weight of the respective CMP composition (D) hydrogen peroxide as oxidizing agent in a total amount of from 0.0001 to 2 wt.-% based on the total amount of the respective CMP composition (E) aqueous medium wherein the CMP composition (Q) has a pH in the range of from 6 to 9.5.

公开(公告)号：US20160160083A1

公开(公告)日：2016-06-09

申请号：US14905635

申请日：2014-07-08

Applicant: BASF SE

Inventor： Michael LAUTER ,  Yuzhuo Li ,  Bastian Marten NOLLER ,  Roland LANGE ,  Robert REICHARDT ,  Yongqing LAN ,  Volodymyr BOYKO ,  Alexander KRAUS ,  Joachim Von SEYERL ,  Sheik Ansar USMAN IBRAHIM ,  Aax SIEBERT ,  Kristine HARTNAGEL ,  Joachim DENGLER ,  Nina Susanne HILLESHEIM

IPC: C09G1/02 ,  H01L21/3105 ,  H01L21/306

CPC classification number: C09G1/02 ,  C09D5/027 ,  C09D7/65 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/31053

Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising abrasive particles containing ceria.

Abstract translation: 描述了包含含有二氧化铈的磨料颗粒的化学机械抛光（CMP）组合物。