公开(公告)号：US20140011361A1

公开(公告)日：2014-01-09

申请号：US13933427

申请日：2013-07-02

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Yuzhou LI ,  Michael LAUTER ,  Wei Lan CHIU

IPC: C09G1/02 ,  H01L21/306

CPC classification number: C09G1/02 ,  H01L21/30625 ,  H01L21/3212

Abstract: A chemical mechanical polishing (CMP) composition (Q) comprising (A) Inorganic particles, organic particles, or a mixture or composite thereof, wherein the particles are cocoon-shaped (B) a non-ionic surfactant, (C) a carbonate or hydrogen carbonate salt, (D) an alcohol, and (M) an aqueous medium.

Abstract translation: 化学机械抛光（CMP）组合物（Q），其包含（A）无机颗粒，有机颗粒或其混合物或复合物，其中所述颗粒是茧形的（B）非离子表面活性剂，（C）碳酸盐或 碳酸氢盐，（D）醇和（M）水性介质。

公开(公告)号：US20220064485A1

公开(公告)日：2022-03-03

申请号：US17312807

申请日：2019-12-11

Applicant: BASF SE

Inventor： Haci Osman GUEVENC ,  Michael LEUTER ,  WEI Taoyuan ,  Wei Lan CHIU ,  Reza M. GOLZARIAN ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: C09G1/02 ,  H01L21/321

Abstract: The presently claimed invention relates to a chemical-mechanical polishing (CMP) composition and chemical-mechanical polishing (CMP) methods. The presently claimed invention particularly relates to a composition and process for chemical-mechanical polishing of substrates containing copper and ruthenium, specifically, semiconductor substrates containing copper and ruthenium.

公开(公告)号：US20220267643A1

公开(公告)日：2022-08-25

申请号：US17632816

申请日：2020-08-04

Applicant: BASF SE

Inventor： Michael LAUTER ,  Haci Osman GUEVENC ,  Wei Lan CHIU ,  Te Yu WEI

IPC: C09G1/02 ,  C23F11/14 ,  C23F11/173 ,  H01L21/321

Abstract: The presently claimed invention relates to compositions and methods for inhibition of etching. The presently claimed invention particularly relates to a composition and methods for inhibition of tungsten etching.

公开(公告)号：US20220056307A1

公开(公告)日：2022-02-24

申请号：US17312821

申请日：2019-12-11

Applicant: BASF SE

Inventor： Haci Osman GUEVENC ,  Michael LAUTER ,  Te Yu WEI ,  Wei Lan CHIU ,  Reza M. GOLZARIAN ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: C09G1/02 ,  H01L21/321

Abstract: The presently claimed invention relates to a chemical-mechanical polishing (CMP) composition and chemical-mechanical polishing (CMP) methods. The presently claimed invention particularly relates to a composition and process for chemical-mechanical polishing of substrates containing copper and ruthenium, specifically, semiconductor substrates containing copper and ruthenium.