公开(公告)号：US20170362464A1

公开(公告)日：2017-12-21

申请号：US15538851

申请日：2015-12-22

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Max SIEBERT ,  Yongqing LAN ,  Michael LAUTER ,  Sheik Ansar USMAN IBRAHIM ,  Reza GOLZARIAN ,  Haci Osman GUEVENC ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: C09G1/02 ,  B24B37/20 ,  C09K3/14 ,  C23F3/06 ,  H01L21/321 ,  H01L21/768

CPC classification number: C09G1/02 ,  B24B37/20 ,  C09K3/1409 ,  C23F3/06 ,  H01L21/302 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/32115 ,  H01L21/3212 ,  H01L21/461 ,  H01L21/463 ,  H01L21/7684

Abstract: A chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) containing (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) contains: (A) Inorganic particles, (B) a substituted aromatic compound with at least one carboxylic acid function as corrosion inhibitor, (C) at least one amino acid, (D) at least one oxidizer, (E) an aqueous medium, wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：US20200294813A1

公开(公告)日：2020-09-17

申请号：US16094381

申请日：2016-04-27

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Max SIEBERT ,  Yongqing LAN ,  Michael LAUTER ,  Sheik Ansar USMAN IBRAHIM ,  Reza M GOLZARIAN ,  Haci Osman GUEVENC ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: H01L21/321 ,  C09K3/14 ,  C09G1/02

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) an anionic surfactant of the general formula (I) R-S wherein R is C5-C20-alkyl, C5-C20-alkenyl, C5-C20-alkylacyl or C5-C20-alkenylacyl and S is a sulfonic acid derivative, an amino acid derivative or a phosphoric acid derivative or salts or mixtures thereof (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：US20180230333A1

公开(公告)日：2018-08-16

申请号：US15751612

申请日：2016-08-09

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Max SIEBERT ,  Yongqing LAN ,  Michael LAUTER ,  Sheik Ansar USMAN IBRAHIM ,  Reza M. GOLZARIAN ,  Te Yu WEI ,  Haci Osman GUEVENC ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: C09G1/02 ,  H01L21/461 ,  H01L21/321

CPC classification number: C09G1/02 ,  H01L21/3212 ,  H01L21/461

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy and (iii) Ti N and/or TaN, wherein the CMP composition (Q) comprises (E) Inorganic particles (F) at least one organic compound comprising an amino-group and an acid group (Y), wherein said compound comprises n amino groups and at least n+1 acidic protons, wherein n is a integer≥1. (G) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the respective CMP composition, (H) an aqueous medium wherein the CMP composition (Q) has a pH of more than 6 and less than 9.

公开(公告)号：US20180016468A1

公开(公告)日：2018-01-18

申请号：US15538313

申请日：2015-12-16

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Max SIEBERT ,  Yongqing LAN ,  Michael LAUTER ,  Sheik Ansar USMAN IBRAHIM ,  Reza GOLZARIAN ,  Haci Osman GUEVENC ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: C09G1/02 ,  B24B37/04 ,  C09K3/14 ,  H01L21/321

Abstract: Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt and/or co-balt alloy comprising substrates Abstract Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a substituted tetrazole derivative of the general formula (I), wherein R1 is H, hydroxy, alkyl, aryl, alkylaryl, amino, carboxyl, alkylcarboxyl, thio or alkylthio. (C) at least one amino acid (D) at least one oxidizer, (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：US20170158913A1

公开(公告)日：2017-06-08

申请号：US15325464

申请日：2015-07-14

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Max SIEBERT ,  Yongqing LAN ,  Michael LAUTER ,  Haci Osman GUEVENC ,  Julian PROELSS ,  Sheik Ansar USMAN IBRAHIM ,  Reza GOLZARIAN

IPC: C09G1/04

Abstract: A chemical mechanical polishing (CMP) composition (Q) comprising (A) Colloidal or fumed inorganic particles (A) or a mixture thereof in a total amount of from 0.0001 to 2.5 wt.-% based on the total weight of the respective CMP composition (B) at least one amino acid in a total amount of from 0.2 to 1 wt.-% based on the total weight of the respective CMP composition (C) at least one corrosion inhibitor in a total amount of from 0.001 to 0.02 wt.-% based on the total weight of the respective CMP composition (D) hydrogen peroxide as oxidizing agent in a total amount of from 0.0001 to 2 wt.-% based on the total amount of the respective CMP composition (E) aqueous medium wherein the CMP composition (Q) has a pH in the range of from 6 to 9.5.

公开(公告)号：US20160160083A1

公开(公告)日：2016-06-09

申请号：US14905635

申请日：2014-07-08

Applicant: BASF SE

Inventor： Michael LAUTER ,  Yuzhuo Li ,  Bastian Marten NOLLER ,  Roland LANGE ,  Robert REICHARDT ,  Yongqing LAN ,  Volodymyr BOYKO ,  Alexander KRAUS ,  Joachim Von SEYERL ,  Sheik Ansar USMAN IBRAHIM ,  Aax SIEBERT ,  Kristine HARTNAGEL ,  Joachim DENGLER ,  Nina Susanne HILLESHEIM

IPC: C09G1/02 ,  H01L21/3105 ,  H01L21/306

CPC classification number: C09G1/02 ,  C09D5/027 ,  C09D7/65 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/31053

Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising abrasive particles containing ceria.

Abstract translation: 描述了包含含有二氧化铈的磨料颗粒的化学机械抛光（CMP）组合物。

公开(公告)号：US20200299547A1

公开(公告)日：2020-09-24

申请号：US16765665

申请日：2018-11-12

Applicant: BASF SE

Inventor： Christian DAESCHLEIN ,  Max SIEBERT ,  Yongqing LAN ,  Michael LAUTER ,  Sheik Ansar USMAN IBRAHIM ,  Reza M GOLZARIAN ,  Te Yu WEI ,  Haci Osman GUEVENC ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: C09G1/02 ,  H01L21/321

Abstract: The presently claimed subject matter is directed to a chemical mechanical polishing (CMP) composition comprising inorganic particles, at least one organic compound comprising an amino group and/or at least one acid group (Y), potassium persulfate, at least one corrosion inhibitor and an aqueous medium for polishing substrates of the semiconductor industry comprising cobalt and/or a cobalt alloy and TiN and/or TaN.

公开(公告)号：US20170369743A1

公开(公告)日：2017-12-28

申请号：US15536447

申请日：2015-12-04

Applicant: BASF SE

Inventor： Max SIEBERT ,  Michael LAUTER ,  Yongqing LAN ,  Robert REICHARDT ,  Alexandra MUENCH ,  Manuel SIX ,  Gerald DANIEL ,  Bastian Marten NOLLER ,  Kevin HUANG ,  Sheik Ansar USMAN IBRAHIM

IPC: C09G1/04 ,  H01L21/304 ,  C09K13/00 ,  H01L21/461 ,  C09G1/02

CPC classification number: C09G1/04 ,  C09G1/02 ,  C09K13/00 ,  H01L21/304 ,  H01L21/461

Abstract: Disclosed herein is a chemical mechanical polishing (CMP) composition (Q) containing (A) inorganic particles, (B) a compound of general formula (I) below, and (C) an aqueous medium, in which the composition (Q) has a pH of from 2 to 6.

公开(公告)号：US20170369741A1

公开(公告)日：2017-12-28

申请号：US15538334

申请日：2015-12-11

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Max SIEBERT ,  Yongqing LAN ,  Michael LAUTER ,  Sheik Ansar USMAN IBRAHIM ,  Reza GOLZARIAN ,  Haci Osman GUEVENC ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: C09G1/02 ,  C09G1/04 ,  C09K13/00 ,  H01L21/461

CPC classification number: C09G1/02 ,  C09G1/04 ,  C09K13/00 ,  H01L21/461

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a triazine derivative of the general formula (I) wherein R1, R2, R3, R4, R5 and R6 are independently from each other H, methyl, ethyl, propyl, butyl, pentyl, C2-C10-alkylcarboxylic acid, hydroxymethyl, vinyl or allyl (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.