公开(公告)号：US20220372632A1

公开(公告)日：2022-11-24

申请号：US17633228

申请日：2020-08-04

Applicant: BASF SE

Inventor： Michael LAUTER ,  Haci Osman GUEVENC ,  Te Yu WEI ,  Ching Hsun CHAO

IPC: C23F11/173 ,  C22C27/04 ,  H01L21/321

Abstract: The presently claimed invention relates to compositions and methods for inhibition of etching. The presently claimed invention particularly relates to a composition and methods for inhibition of tungsten etching.

公开(公告)号：US20180230333A1

公开(公告)日：2018-08-16

申请号：US15751612

申请日：2016-08-09

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Max SIEBERT ,  Yongqing LAN ,  Michael LAUTER ,  Sheik Ansar USMAN IBRAHIM ,  Reza M. GOLZARIAN ,  Te Yu WEI ,  Haci Osman GUEVENC ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: C09G1/02 ,  H01L21/461 ,  H01L21/321

CPC classification number: C09G1/02 ,  H01L21/3212 ,  H01L21/461

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy and (iii) Ti N and/or TaN, wherein the CMP composition (Q) comprises (E) Inorganic particles (F) at least one organic compound comprising an amino-group and an acid group (Y), wherein said compound comprises n amino groups and at least n+1 acidic protons, wherein n is a integer≥1. (G) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the respective CMP composition, (H) an aqueous medium wherein the CMP composition (Q) has a pH of more than 6 and less than 9.

公开(公告)号：US20200299547A1

公开(公告)日：2020-09-24

申请号：US16765665

申请日：2018-11-12

Applicant: BASF SE

Inventor： Christian DAESCHLEIN ,  Max SIEBERT ,  Yongqing LAN ,  Michael LAUTER ,  Sheik Ansar USMAN IBRAHIM ,  Reza M GOLZARIAN ,  Te Yu WEI ,  Haci Osman GUEVENC ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: C09G1/02 ,  H01L21/321

Abstract: The presently claimed subject matter is directed to a chemical mechanical polishing (CMP) composition comprising inorganic particles, at least one organic compound comprising an amino group and/or at least one acid group (Y), potassium persulfate, at least one corrosion inhibitor and an aqueous medium for polishing substrates of the semiconductor industry comprising cobalt and/or a cobalt alloy and TiN and/or TaN.

公开(公告)号：US20190002802A1

公开(公告)日：2019-01-03

申请号：US16064686

申请日：2016-12-20

Applicant: BASF SE

Inventor： Christian DAESCHLEIN ,  Max SIEBERT ,  Michael LAUTER ,  Piotr PRZYBYLSKI ,  Julian PROELSS ,  Andreas KLIPP ,  Haci Osman GUEVENC ,  Leonardus LEUNISSEN ,  Roelf-Peter BAUMANN ,  Te Yu WEI

IPC: C11D7/26 ,  C11D7/32 ,  C11D3/00 ,  H01L21/321 ,  H01L21/02

Abstract: Described is a post chemical-mechanical-polishing (post-CMP) cleaning composition comprising or consisting of: (A) one or more nonionic polymers selected from the group consisting of poly-acrylamides, polyhydroxyethyl(meth)acrylates (PHE(M)A), polyvinylpyrrolidone (PVP), polyvinyl alcohol (PVA), polymers of formula (I), and mixtures thereof, wherein R1 is hydrogen, methyl, ethyl, n-propyl, iso-propyl, n-butyl, iso-butyl, or sec-butyl, R2 is hydrogen or methyl, and n is an integer, (B) poly(acrylic acid) (PAA) or acrylic acid-maleic acid copolymer with a mass average molar mass (Mw) of up to 10,000 g/mol, and (C) water, wherein the pH of the composition is in the range of from 7.0 to 10.5.

公开(公告)号：US20180371371A1

公开(公告)日：2018-12-27

申请号：US16064918

申请日：2016-12-20

Applicant: BASF SE

Inventor： Christian DAESCHLEIN ,  Max SIEBERT ,  Michael LAUTER ,  Peter PRZYBYLSKI ,  Julian PROELSS ,  Andreas KLIPP ,  Haci Osman GUEVENC ,  Leonardus LEUNISSEN ,  Roelf-Peter BAUMANN ,  Te Yu WEI

IPC: C11D3/37 ,  C11D3/00 ,  C11D11/00

Abstract: A post chemical-mechanical-polishing (post-CMP) cleaning composition including: (A) polyethylene glycol (PEG) with a mass average molar mass (Mw) in the range of from 400 to 8,000 g/mol, (B) an anionic polymer selected from poly(acrylic acid) (PAA), acrylic acid-maleic acid copolymers, polyaspartic acid (PASA), polyglutamic acid (PGA), polyvinylphosphonic acid, polyvinylsulfonic acid, poly(styrenesulfonic acid), polycarboxylate ethers (PCE), PEG-phosphorous acids, and copolymers of the polymers thereof, and (C) water, where the pH of the composition is from 7.0 to 10.5.

公开(公告)号：US20220267643A1

公开(公告)日：2022-08-25

申请号：US17632816

申请日：2020-08-04

Applicant: BASF SE

Inventor： Michael LAUTER ,  Haci Osman GUEVENC ,  Wei Lan CHIU ,  Te Yu WEI

IPC: C09G1/02 ,  C23F11/14 ,  C23F11/173 ,  H01L21/321

Abstract: The presently claimed invention relates to compositions and methods for inhibition of etching. The presently claimed invention particularly relates to a composition and methods for inhibition of tungsten etching.

公开(公告)号：US20220056307A1

公开(公告)日：2022-02-24

申请号：US17312821

申请日：2019-12-11

Applicant: BASF SE

Inventor： Haci Osman GUEVENC ,  Michael LAUTER ,  Te Yu WEI ,  Wei Lan CHIU ,  Reza M. GOLZARIAN ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: C09G1/02 ,  H01L21/321

Abstract: The presently claimed invention relates to a chemical-mechanical polishing (CMP) composition and chemical-mechanical polishing (CMP) methods. The presently claimed invention particularly relates to a composition and process for chemical-mechanical polishing of substrates containing copper and ruthenium, specifically, semiconductor substrates containing copper and ruthenium.

公开(公告)号：US20210102093A1

公开(公告)日：2021-04-08

申请号：US17123685

申请日：2020-12-16

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Max SIEBERT ,  Yongqing LAN ,  Michael LAUTER ,  Sheik USMAN IBRAHIM ,  Reza M. GOLZARIAN ,  Te Yu WEI ,  Haci Osman GUEVENC ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: C09G1/02 ,  C09G1/04 ,  C09K3/14 ,  H01L21/306 ,  H01L21/321 ,  H01L21/461

Abstract: A chemical mechanical polishing composition may be used for chemical mechanical polishing of a substrate including (i) cobalt and/or (ii) a cobalt alloy and (iii) TiN and/or TaN, wherein the CMP composition includes (A) inorganic particles (B) at least one organic compound including an amino-group and an acid group, the compound including n amino groups and at least n+1 acidic protons, a being a integer ≥1; (C) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the MP composition; and (D) an aqueous medium. The CMP composition may have a pH of more than 6 and less than 9.