ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THEREOF, AND DISPLAY DEVICE
    6.
    发明申请
    ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THEREOF, AND DISPLAY DEVICE 审中-公开
    阵列基板,其制造方法和显示装置

    公开(公告)号:US20160035748A1

    公开(公告)日:2016-02-04

    申请号:US14432638

    申请日:2014-08-01

    IPC分类号: H01L27/12

    摘要: Disclosed is an array substrate, a method for manufacturing the same, and a display device. The array substrate includes: a base substrate and a plurality of data lines disposed on the base substrate, The base substrate comprises a plurality of attaching areas in which the end of each data line attaches to the base substrate, and non-attaching areas between each two adjacent attaching areas, and a height layer is disposed between a passivation layer and the base substrate in the non-attaching area. By interposing a height layer between the passivation layer and the base substrate in the non-attaching area, the height difference between the passivation layer in the attaching area and the non-attaching area is decreased or disappeared, then the problem of fall-off of the passivation layer is solved, and the reliability of the product is increased.

    摘要翻译: 公开了阵列基板,其制造方法和显示装置。 阵列基板包括:基底基板和设置在基底基板上的多条数据线。基底基板包括多个附接区域,每个数据线的端部连接到基底基板,每个数据线的每个 两个相邻的附接区域和高度层设置在非附着区域中的钝化层和基底基板之间。 通过在非附着区域中在钝化层和基底基板之间插入高度层,附着区域中的钝化层与非附着区域之间的高度差减小或消失,则脱落的问题 解决了钝化层,提高了产品的可靠性。

    THIN FILM TRANSISTOR, FABRICATION METHOD THEREOF, REPAIR METHOD THEREOF AND ARRAY SUBSTRATE
    9.
    发明申请
    THIN FILM TRANSISTOR, FABRICATION METHOD THEREOF, REPAIR METHOD THEREOF AND ARRAY SUBSTRATE 审中-公开
    薄膜晶体管,其制造方法,其修复方法和阵列基板

    公开(公告)号:US20160013281A1

    公开(公告)日:2016-01-14

    申请号:US14435610

    申请日:2014-09-18

    摘要: Embodiments of the present disclosure disclose a thin film transistor, a fabrication method thereof, a repair method thereof, and an array substrate. The thin film transistor comprises a gate electrode (12), a gate insulating layer (13), an active layer (14), a source electrode (16) and a drain electrode (17). The source electrode (16) comprises a first source electrode portion (161) and a second source electrode portion (162) independent from each other, the first source electrode portion (161) and the second source electrode portion (162) are electrically connected with the active layer (14), respectively; and/or, the drain electrode (17) comprises a first drain electrode portion (171) and a second drain electrode portion (172) independent from each other, the first drain electrode portion (171) and the second drain electrode portion (172) are electrically connected with the active layer (14), respectively.

    摘要翻译: 本公开的实施例公开了薄膜晶体管,其制造方法,其修复方法和阵列基板。 薄膜晶体管包括栅电极(12),栅极绝缘层(13),有源层(14),源电极(16)和漏电极(17)。 源极(16)包括彼此独立的第一源电极部分(161)和第二源电极部分(162),第一源电极部分(161)和第二源电极部分(162)与 活性层(14); 和/或所述漏电极(17)包括彼此独立的第一漏电极部分(171)和第二漏电极部分(172),所述第一漏电极部分(171)和所述第二漏电极部分(172) 分别与有源层(14)电连接。