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1.发明公开公开(公告)号：US20230197407A1
公开(公告)日：2023-06-22
申请号：US17926413
申请日：2021-05-12
Inventor： Jing WEI , Gang WEI , Jing YANG , Chen NIU , Xingfei MAO
IPC: H01J37/32
CPC classification number: H01J37/321 , H01J37/32568 , H01J37/32183 , H01J37/32577 , H01J2237/24564 , H01J2237/3343
Abstract: An upper electrode mechanism of a semiconductor process apparatus includes a radio frequency (RF) coil including two parallelly-connected branches, two current sensors each arranged on one of the branches and configured to detect a branch current of a corresponding one of the two branches, and a current adjustment device connected to the RF coil and configured to adjust the branch current of at least one branch of the two branches according to the detected branch currents to cause the branch currents of the two branches to be equal.
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2.发明公开公开(公告)号：US20240194441A1
公开(公告)日：2024-06-13
申请号：US18553561
申请日：2022-03-16
IPC: H01J37/244 , H01J37/32
CPC classification number: H01J37/244 , H01J37/32568 , H01J37/32899 , H01J2237/24564 , H01J2237/2485 , H01J2237/334
Abstract: The present disclosure provides a power adjustment method of an upper electrode power supply of a semiconductor process apparatus. The method includes obtaining a processing load of an upper electrode power supply of a reference process chamber and a processing load of an upper electrode power supply of a current process chamber corresponding to semiconductor process step, when starting to perform a semiconductor process step, determining a power compensation coefficient for the current process chamber relative to the reference process chamber based on the processing load of the current process chamber and the processing load the reference process chamber, and controlling the upper electrode power supply to output compensation power. The compensation power is a product of the set power of the upper electrode power supply of the current process chamber corresponding to the semiconductor process step and the corresponding power compensation coefficient. With the power adjustment method of the present disclosure, the consistency of the plasma parameters in different process chambers is improved, thereby improving the process result consistency. The present disclosure also provides the semiconductor process apparatus.
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公开(公告)号：US20210398776A1
公开(公告)日：2021-12-23
申请号：US17279916
申请日：2019-10-16
Inventor： Yahui HUANG , Gang WEI , Jing WEI , Juanjuan LI , Guodong CHEN , Jing YANG
IPC: H01J37/32 , H01L21/3065
Abstract: The present disclosure provides a radio frequency (RF) source control method. An RF source includes at least one pair of a main power supply and a secondary power supply with a same frequency. The RF source control method includes dividing each process step of process steps of a plasma process into a plurality of time periods, and when performing each process step, maintaining a common exciter (CEX) phase locking delay angle of the at least one pair of the main power supply and the secondary power supply corresponding to each of the time periods at a predetermined value to provide an increased angular distribution uniformity of plasma. The RF source control method provided by the present disclosure may be used to adjust plasma distribution above a to-be-processed workpiece to average the plasma angular direction distribution of the entire process step as a whole to increase process uniformity of the to-be-processed workpiece.
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4.发明申请公开(公告)号：US20210098235A1
公开(公告)日：2021-04-01
申请号：US17080632
申请日：2020-10-26
IPC: H01J37/32
Abstract: A method for radio frequency impedance matching includes performing frequency scanning matching using first n pulse phases of first m pulse periods as a frequency scanning stage, and from an (m+1)-th pulse period to an M-th pulse period, maintaining a frequency scanning parameter of a pulse phase corresponding to each frequency scanning stage of each pulse period. The radio frequency includes M pulse periods, each pulse period includes N pulse phases, M and N are integers greater than 1, m and n are integers greater than 0, m
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5.发明申请公开(公告)号：US20210066041A1
公开(公告)日：2021-03-04
申请号：US17095278
申请日：2020-11-11
Abstract: A pulse modulation system of a radio frequency (RF) power supply includes a modulation output circuit and a frequency adjustment circuit. The modulation output circuit is configured to modulate an output signal of the RF power supply and output a pulse modulation RF signal. Each pulse cycle of the pulse modulation RF signal includes a pulse-on phase and a pulse-off phase. An overshoot sub-phase is set in an initial preset time of the pulse-on phase. The frequency adjustment circuit is electrically connected to the modulation output circuit. The frequency adjustment circuit is configured to adjust an RF frequency of the pulse modulation RF signal of the overshoot sub-phase to cause a reflected power of the overshoot sub-phase to satisfy a preset reflected power or a reflected coefficient to satisfy a preset reflected coefficient.
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Patent Agency Ranking
6.发明公开公开(公告)号：US20240234088A1
公开(公告)日：2024-07-11
申请号：US18616998
申请日：2024-03-26
Inventor： Jing WEI , Yu ZHANG , Gang WEI , Guodao SHAN , Chenyu ZHONG , Yanyan YOU , Jing YANG
IPC: H01J37/32
CPC classification number: H01J37/321 , H01J37/32183 , H01J37/32577
Abstract: A power control method of a lower RF power supply of semiconductor processing equipment includes, when a processing chamber starts semiconductor processing, with a predetermined power compensation equation and according to a pre-obtained first RF circuit parameter set of a reference chamber and a second RF circuit parameter set of a present processing chamber performing the semiconductor processing, obtaining a power compensation coefficient of the present processing chamber relative to the reference chamber, according to the power compensation coefficient and a power setting value of the lower RF power supply of the present processing chamber, calculating a power compensation value of the present processing chamber relative to the reference chamber, and controlling the lower RF power supply to output the power compensation value.
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公开(公告)号：US20240006170A1
公开(公告)日：2024-01-04
申请号：US18254062
申请日：2021-11-25
Inventor： Jing WEI , Gang WEI , Jing YANG , Guodao SHAN
IPC: H01J37/32
CPC classification number: H01J37/3299 , H01J37/32715 , H01J2237/2007
Abstract: The present disclosure provides a semiconductor process apparatus and a power control method. The apparatus includes an upper electrode assembly, a process chamber, and a power adjustment assembly. A chuck configured to carry a wafer is arranged in the process chamber. The upper electrode assembly is configured to excite the process gas in the process chamber to form the plasma. The power adjustment component is configured to detect the bias voltage value on the upper surface of the chuck in real-time, calculate the difference between the bias voltage value and the target bias voltage value, and when the difference is greater than the preset threshold, adjust the output power value of the upper electrode assembly according to the difference until the difference is less than or equal to the preset threshold. The semiconductor process apparatus of the present disclosure can be configured to more precisely control the plasma density in the process chamber to improve the process consistency among different process chambers.
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8.发明公开公开(公告)号：US20230386790A1
公开(公告)日：2023-11-30
申请号：US18248870
申请日：2021-10-12
Inventor： Jing WEI , Gang WEI , Yueping HUA
IPC: H01J37/32
CPC classification number: H01J37/32183 , H01J2237/32
Abstract: The present disclosure provides an impedance-matching method applied to a semiconductor process apparatus, an impedance-matching device, and the semiconductor process apparatus. The impedance-matching method includes adjusting a parameter value of an adjustable element of an impedance-matching device to a preset initial value at beginning of a process, when a radio frequency (RF) power supply is powered on, adjusting the parameter value of the adjustable element according to a pre-stored optimal matching path corresponding to the process, and adjusting the parameter value of the adjustable element using an automatic matching algorithm after reaching end time of the preset matching period until impedance-matching is achieved. The optimal matching path includes parameter values of the adjustable element corresponding to different moments in a preset matching period.
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9.发明申请公开(公告)号：US20210118651A1
公开(公告)日：2021-04-22
申请号：US17134113
申请日：2020-12-24
Inventor： Xiaoyang CHENG , Gang WEI , Jing WEI , Jinzhi BAI , Jing YANG
Abstract: A radio frequency (RF) pulse matching method includes presetting a matching threshold and initializing a pulse count value to a pulse reference value and loading pulse power to an upper electrode and a lower electrode. The upper electrode includes an upper RF power supply and a corresponding upper matching device. The lower electrode includes a lower RF power supply and a corresponding lower matching device. The method further includes collecting a pulse signal of the pulse power and calculating a matching parameter according to the pulse signal, determining a magnitude of the matching parameter relative to the matching threshold and resetting the pulse count value, causing the upper matching device to perform matching on the upper RF power supply or the lower matching device to perform matching on the lower RF power supply, and repeating processes until the upper RF power supply and the lower RF power supply are matched.
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10.发明申请公开(公告)号：US20190108977A1
公开(公告)日：2019-04-11
申请号：US16086641
申请日：2016-05-03
Inventor： Jing WEI , Xiaoyang CHENG , Xingcun LI , Gang WEI
Abstract: An impedance matching system is provided. The impedance matching system includes: an impedance matching device arranged between a radio frequency (RF) power supply and a reaction chamber, adapted to connect the RF power supply to the reaction chamber through a switch, and configured to automatically perform an impedance matching on an output impedance of the RF power supply and an input impedance of the impedance matching device; the switch and a load circuit, the switch being configured to enable the RF power supply to be selectively connected to the reaction chamber or to the load circuit; and a control unit configured to control the switch to connect the RF power supply to the reaction chamber or connect the RF power supply to the load circuit according to a preset timing sequence. The impedance matching device is configured to convert a continuous wave output of the RF power supply into a pulse output according to the preset timing sequence, and provide the pulse output to the reaction chamber. The preset timing sequence is obtained based on a frequency and a duty cycle of a pulsed RF signal required by a process.
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