Patent search ap:("BELL TELEPHONE LABOR INC") AND inv:"ATALLA MARTIN M" Page 1

1.

发明授权
Junction formation by thermal oxidation of semiconductive material 失效
Title translation: 通过半导体材料的热氧化形成结

公开(公告)号：US2953486A

公开(公告)日：1960-09-20

申请号：US81723959

申请日：1959-06-01

Applicant: BELL TELEPHONE LABOR INC

Inventor： ATALLA MARTIN M

IPC: H01L21/00 , H01L21/225 , H01L23/29

CPC classification number: H01L21/00 , H01L21/2255 , H01L23/291 , H01L2924/0002 , Y10S438/92 , H01L2924/00

2.

发明授权
Varactor diode with concentration of deep lying impurities and enabling circuitry 失效
Title translation: 变容二极管具有浓度较高的杂质和使能电路

公开(公告)号：US3176151A

公开(公告)日：1965-03-30

申请号：US8891261

申请日：1961-02-13

Applicant: BELL TELEPHONE LABOR INC

Inventor： ATALLA MARTIN M , DAWON KAHNG

IPC: H01L29/00

CPC classification number: H01L29/00 , Y10S148/062

3.

发明授权
Semiconductor tunnel device 失效
Title translation: 半导体隧道装置

公开(公告)号：US3045129A

公开(公告)日：1962-07-17

申请号：US7466260

申请日：1960-12-08

Applicant: BELL TELEPHONE LABOR INC

Inventor： ATALLA MARTIN M , ROSS IAN M , SMITS FRIEDOLF M

IPC: H01L21/24 , H01L21/329 , H01L29/00 , H01L29/06 , H01L29/68 , H01L29/73 , H01L29/78 , H01L29/88

CPC classification number: H01L29/78 , H01L21/24 , H01L29/00 , H01L29/06 , H01L29/66083 , H01L29/68 , H01L29/73 , H01L29/88

4.

发明授权
Semiconductor devices having dielectric coatings 失效
Title translation: 具有介电涂层的半导体器件

公开(公告)号：US3206670A

公开(公告)日：1965-09-14

申请号：US1368860

申请日：1960-03-08

Applicant: BELL TELEPHONE LABOR INC

Inventor： ATALLA MARTIN M

IPC: H01L23/29 , H01L29/00

CPC classification number: H01L23/291 , H01L29/00 , H01L2924/0002 , H01L2924/3011 , H01L2924/00

5.

发明授权
Semiconductor device utilizing majority carriers with thin metal base between semiconductor materials 失效
Title translation: 半导体器件利用半导体材料之间的薄金属基底的多数载流子

公开(公告)号：US3121809A

公开(公告)日：1964-02-18

申请号：US14053361

申请日：1961-09-25

Applicant: BELL TELEPHONE LABOR INC

Inventor： ATALLA MARTIN M

IPC: H01J1/308 , H01L27/00 , H01L29/06 , H01L29/68 , H01L29/73

CPC classification number: H01L29/68 , H01J1/308 , H01L27/00 , H01L29/06 , H01L29/73 , Y10S148/142

6.

发明授权
Semiconductor triode 失效
Title translation: 半导体三极管

公开(公告)号：US3056888A

公开(公告)日：1962-10-02

申请号：US5015660

申请日：1960-08-17

Applicant: BELL TELEPHONE LABOR INC

Inventor： ATALLA MARTIN M

IPC: H01L27/00 , H01L27/088 , H01L29/00 , H01L29/73 , H01L29/739 , H01L29/76 , H01L29/78 , H01L29/786

CPC classification number: H01L29/78 , H01L27/00 , H01L27/088 , H01L29/00 , H01L29/73 , H01L29/739 , H01L29/76 , H01L29/786

7.

发明授权
Semiconductor contact 失效
Title translation: 半导体接触

公开(公告)号：US2973466A

公开(公告)日：1961-02-28

申请号：US83895459

申请日：1959-09-09

Applicant: BELL TELEPHONE LABOR INC

Inventor： ATALLA MARTIN M , LA BATE ERNEST E

IPC: H01L21/00 , H01L23/31

CPC classification number: H01L21/00 , H01L23/3157 , H01L2924/0002 , H01L2924/00

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