Measurement of field effect transistor pinch-off voltage
    4.
    发明授权
    Measurement of field effect transistor pinch-off voltage 失效
    场效应晶体管钳位电压的测量

    公开(公告)号:US3648170A

    公开(公告)日:1972-03-07

    申请号:US3648170D

    申请日:1969-08-08

    CPC classification number: G01R31/2621

    Abstract: A test circuit for determining the pinch-off voltage of a field effect transistor comprises, in series, a source of unidirectional voltage of a magnitude greater than the expected pinch-off voltage and less than the breakdown voltage, the source and drain electrodes respectively of the field effect transistor under test, and a resistance element of relatively large magnitude, typically, at least one megohm. The gate electrode is grounded and observation of the voltage drop across the resistance element gives a reading differing from theoretical pinch-off voltage by only a small percentage.

    Abstract translation: 用于确定场效应晶体管的截止电压的测试电路包括串联的大于预期的截止电压且小于击穿电压的单向电压源,源极和漏极分别为 正在测试的场效应晶体管,以及相对较大幅度的电阻元件,通常至少为1兆欧。 栅电极接地,并且观察电阻元件两端的电压降仅使理论夹断电压的读数不同。

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