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公开(公告)号:US20100102293A1
公开(公告)日:2010-04-29
申请号:US12472224
申请日:2009-05-26
申请人: BERNARDETTE KUNERT , JORG KOCH , STEFAN REINHARD , KERSTIN VOLZ , WOLFGANG STOLZ
发明人: BERNARDETTE KUNERT , JORG KOCH , STEFAN REINHARD , KERSTIN VOLZ , WOLFGANG STOLZ
CPC分类号: H01S5/183 , B82Y20/00 , C30B25/02 , C30B29/40 , H01L21/02381 , H01L21/02392 , H01L21/0245 , H01L21/02461 , H01L21/02502 , H01L21/02505 , H01L21/02538 , H01L21/0262 , H01L29/201 , H01L33/06 , H01L33/26 , H01L33/32 , H01S5/021 , H01S5/0218 , H01S5/323 , H01S5/34333 , H01S5/3434
摘要: The invention relates to a monolithic integrated semiconductor structure comprising a carrier layer on the basis of doped Si or doped GaP and a III/V semiconductor disposed thereupon and having the composition GaxInyNaAsbPcSbd, wherein x=70-100 mole-%, y=0-30 mole-%, a=0.5-15 mole-%, b=67.5-99.5 mole-%, c=0-32.0 mole-% and d=0-15 mole-%, wherein the total of x and y is always 100 mole-%, wherein the total of a, b, c and d is always 100 mole-%, and wherein the ratio of the totals of x and y on the one hand, and of a to d on the other hand, is substantially 1:1, to methods for the production thereof, new semiconductors, the use thereof for the production of luminescence diodes and laser diodes or also modulator and detector structures, which are monolithically integrated in integrated circuits on the basis of the Si or GaP technology.
摘要翻译: 本发明涉及一种单片集成半导体结构,其包括基于掺杂的Si或掺杂的GaP的载流子层和其上配置的具有组成GaxInyNaAsbPcSbd的III / V半导体,其中x = 70-100摩尔%,y = 0- 30摩尔%,a = 0.5-15摩尔%,b = 67.5-99.5摩尔%,c = 0-32.0摩尔%和d = 0-15摩尔%,其中x和y的总和总是 100摩尔%,其中a,b,c和d的总和总是100摩尔%,另一方面,x和y的总和与a的总和的比率是 基本上为1:1,其制造方法,新的半导体,其用于生产发光二极管和激光二极管的用途,或者也是调制器和检测器结构,其基于Si或GaP技术单片集成在集成电路中 。