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    III/V-semiconductor
    1.
    发明申请
    III/V-semiconductor 审中-公开
    III / V型半导体

    公开(公告)号：US20070012908A1

    公开(公告)日：2007-01-18

    申请号：US11342287

    申请日：2006-01-26

    申请人： Bernardette Kunert ,  Jorg Koch ,  Stefan Reinhard ,  Kerstin Volz ,  Wolfgang Stolz

    发明人： Bernardette Kunert ,  Jorg Koch ,  Stefan Reinhard ,  Kerstin Volz ,  Wolfgang Stolz

    IPC分类号： H01L29/06 ,  H01L31/00

    CPC分类号： H01S5/183 ,  B82Y20/00 ,  C30B25/02 ,  C30B29/40 ,  H01L21/02381 ,  H01L21/02392 ,  H01L21/0245 ,  H01L21/02461 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/02538 ,  H01L21/0262 ,  H01L29/201 ,  H01L33/06 ,  H01L33/26 ,  H01L33/32 ,  H01S5/021 ,  H01S5/0218 ,  H01S5/323 ,  H01S5/34333 ,  H01S5/3434

    摘要： The invention relates to a monolithic integrated semiconductor structure comprising a carrier layer on the basis of doped Si or doped GaP and a III/V semiconductor disposed thereupon and having the composition GaxInyNaAsbPcSbd, wherein x=70-100 mole-%, y=0-30 mole-%, a=0.5-15 mole-%, b=67.5-99.5 mole-%, c=0-32.0 mole-% and d=0-15 mole-%, wherein the total of x and y is always 100 mole-%, wherein the total of a, b, c and d is always 100 mole-%, and wherein the ratio of the totals of x and y on the one hand and of a to d on the other hand is substantially 1:1, to methods for the production thereof, new semiconductors, the use thereof for the production of luminescence diodes and laser diodes or also modulator and detector structures, which are monolithically integrated in integrated circuits on the basis of the Si or GaP technology.

    摘要翻译： 本发明涉及一种单片集成半导体结构，其包括基于掺杂的Si或掺杂GaP的载流子层和布置在其上的III / V半导体，其组成为Ga x In y y 其中x = 70-100摩尔％，y为0〜 = 0-30摩尔％，a = 0.5-15摩尔％，b = 67.5-99.5摩尔％，c = 0-32.0摩尔％和d = 0-15摩尔％，其中x和 y总是100摩尔％，其中a，b，c和d的总和总是100摩尔％，另一方面，x和y的总和与a的总和的比例 基本上是1：1，其制造方法，新的半导体，其用于生产发光二极管和激光二极管的用途，或者也是基于Si或GaP单片集成在集成电路中的调制器和检测器结构 技术。

    III/V-semiconductor
    4.
    发明授权
    III/V-semiconductor 有权
    III / V型半导体

    公开(公告)号：US08421055B2

    公开(公告)日：2013-04-16

    申请号：US12472224

    申请日：2009-05-26

    申请人： Bernardette Kunert ,  Jorg Koch ,  Stefan Reinhard ,  Kerstin Volz ,  Wolfgang Stolz

    发明人： Bernardette Kunert ,  Jorg Koch ,  Stefan Reinhard ,  Kerstin Volz ,  Wolfgang Stolz

    IPC分类号： H01L33/00

    CPC分类号： H01S5/183 ,  B82Y20/00 ,  C30B25/02 ,  C30B29/40 ,  H01L21/02381 ,  H01L21/02392 ,  H01L21/0245 ,  H01L21/02461 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/02538 ,  H01L21/0262 ,  H01L29/201 ,  H01L33/06 ,  H01L33/26 ,  H01L33/32 ,  H01S5/021 ,  H01S5/0218 ,  H01S5/323 ,  H01S5/34333 ,  H01S5/3434

    摘要： The invention relates to a monolithic integrated semiconductor structure comprising a carrier layer on the basis of doped Si or doped GaP and a III/V semiconductor disposed thereupon and having the composition GaxInyNaAsbPcSbd, wherein x=70-100 mole-%, y=0-30 mole-%, a=0.5-15 mole-%, b=67.5-99.5 mole-%, c=0-32.0 mole-% and d=0-15 mole-%, wherein the total of x and y is always 100 mole-%, wherein the total of a, b, c and d is always 100 mole-%, and wherein the ratio of the totals of x and y on the one hand, and of a to d on the other hand, is substantially 1:1, to methods for the production thereof, new semiconductors, the use thereof for the production of luminescence diodes and laser diodes or also modulator and detector structures, which are monolithically integrated in integrated circuits on the basis of the Si or GaP technology.

    摘要翻译： 本发明涉及一种单片集成半导体结构，其包括基于掺杂的Si或掺杂的GaP的载流子层和其上配置的具有组成GaxInyNaAsbPcSbd的III / V半导体，其中x = 70-100摩尔％，y = 0- 30摩尔％，a = 0.5-15摩尔％，b = 67.5-99.5摩尔％，c = 0-32.0摩尔％和d = 0-15摩尔％，其中x和y的总和总是 100摩尔％，其中a，b，c和d的总和总是100摩尔％，另一方面，x和y的总和与a的总和的比率是 基本上为1：1，其制造方法，新的半导体，其用于生产发光二极管和激光二极管的用途，或者也是调制器和检测器结构，其基于Si或GaP技术单片集成在集成电路中 。