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公开(公告)号：US20220359789A1
公开(公告)日：2022-11-10
申请号：US17620423
申请日：2021-01-06
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Abstract: An inorganic light-emitting diode substrate includes: a base, a plurality of epitaxial layer structures disposed on the base, a passivation layer, and a plurality of second electrodes disposed on a side of the passivation layer away from the base. The base includes a base substrate and a plurality of first electrodes disposed on the base substrate. The plurality of epitaxial layer structures are spaced apart, and each first electrode is coupled to one epitaxial layer structure. The passivation layer is made of photoresist. The passivation layer covers surfaces, away from the base, of the plurality of epitaxial layer structures, and fills gaps between the plurality of epitaxial layer structures. The passivation layer has a plurality of via holes, and each second electrode is coupled to one epitaxial layer structure through at least one via hole.
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公开(公告)号：US20210405490A1
公开(公告)日：2021-12-30
申请号：US17288188
申请日：2020-08-19
Inventor： Yuanhui GUO , Yujie GAO , Wei GUO , Kun GUO , Yanping LIAO
IPC: G02F1/1362 , G02F1/1368
Abstract: An array substrate, a light control panel and a display device are provided. The array substrate includes a plurality of gate lines respectively extending along a first direction, a plurality of data lines respectively extending along a second direction intersected with the first direction, and a plurality of light control pixel units. Each of the plurality of gate lines includes a plurality of grid parts arranged side by side along the first direction and connected in sequence, and each of the plurality of grid parts includes a grid line and an opening area surrounded by the grid line.
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公开(公告)号：US20190097174A1
公开(公告)日：2019-03-28
申请号：US16000148
申请日：2018-06-05
Inventor： Shiqi CHEN , Wei GUO , Yuanjie XU , Zhonglin CAO , Pengcheng ZANG , Ting LI , Jing HE , Wenhua SONG
Abstract: A package structure of a display panel and a display device are provided. The package structure of the display panel includes: a first substrate and a second substrate opposite to each other; and a display component, a drying layer, and a supporting layer, located between the first substrate and the second substrate; wherein, the supporting layer is configured to support the first substrate and the second substrate to maintain an interval between the first substrate and the second substrate, the drying layer and the supporting layer are directly connected with each other, the supporting layer includes a first sub-supporting layer, and the first sub-supporting layer is located on a side of the drying layer away from the display component.
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4.发明申请公开(公告)号：US20190067631A1
公开(公告)日：2019-02-28
申请号：US15988042
申请日：2018-05-24
Inventor： Wei GUO , Yuanjie XU , Zhonglin CAO , Pengcheng ZANG , Shiqi CHEN
Abstract: An organic light emitting diode package structure, an electronic device and a packaging method are disclosed. The organic light emitting diode package structure includes a first substrate, a second substrate, and an organic light emitting diode device. The second substrate is disposed opposite to the first substrate. The organic light emitting diode device is disposed between the first substrate and the second substrate. At least one of the first substrate and the second substrate is provided with a groove, and the groove is disposed on the surface of the first substrate facing the second substrate or/and the surface of the second substrate facing the first substrate. The organic light emitting diode device is sealed in the groove.
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5.发明申请公开(公告)号：US20170133428A1
公开(公告)日：2017-05-11
申请号：US15109205
申请日：2015-11-05
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Wei GUO , Xingdong LIU
IPC: H01L27/146
CPC classification number: H01L27/14676 , G01T1/202 , H01L27/14609 , H01L27/14612 , H01L27/14636 , H01L27/14658 , H01L27/14672 , H01L27/14689 , H01L27/308 , H01L31/085 , H01L31/115
Abstract: A radiographic detection substrate, a manufacture method thereof, and a radiographic detection device are provided. The radiographic detection substrate includes a substrate; and a thin film transistor and a signal storage unit which are formed on the substrate; the thin film transistor includes a gate electrode, an insulating layer, an active layer, a source electrode, a drain electrode and a passivation layer which are sequentially formed on the substrate; the signal storage unit includes a storage capacitor, the storage capacitor includes a first electrode and a second electrode, the first electrode is formed on the insulating layer and lapped with the drain electrode, the second electrode is connected to a ground line; the passivation layer is formed on the source electrode, the drain electrode, the first electrode and the ground line. The present invention efficiently decreases the number of masking processes by at least one connection method selected from lapping the first electrode and the drain electrode, connecting the second electrode to the ground line through the first via hole, and connecting the third electrode to the first electrode via the second via hole, to simplify the manufacture process of the radiographic detection substrate and reduce the manufacture costs.
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Patent Agency Ranking
6.发明申请公开(公告)号：US20160343893A1
公开(公告)日：2016-11-24
申请号：US14763054
申请日：2015-02-15
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Qingrong REN , Lu WANG , Wei GUO
IPC: H01L31/0445 , H01L31/18 , H01L31/0376 , H01L31/0368
Abstract: The present disclosure provides a method for manufacturing a thin-film solar cell, and the thin-film solar cell. The method includes steps of: forming a first electrode on a substrate; forming an N-type doped layer and an intrinsic semiconductor film on the first electrode; doping ions into the intrinsic semiconductor film, and subjecting the ion-doped intrinsic semiconductor film to activation treatment using an excimer laser annealing (ELA) process, so as to form a P-type doped layer at an upper layer of the intrinsic semiconductor film; and forming a second electrode on the P-type doped layer.
Abstract translation: 本公开提供了一种制造薄膜太阳能电池的方法和薄膜太阳能电池。 该方法包括以下步骤：在衬底上形成第一电极; 在第一电极上形成N型掺杂层和本征半导体膜; 将掺杂离子注入到本征半导体膜中，并且使用准分子激光退火（ELA）工艺对离子掺杂的本征半导体膜进行激活处理，以在本征半导体膜的上层形成P型掺杂层; 以及在所述P型掺杂层上形成第二电极。
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公开(公告)号：US20190230209A1
公开(公告)日：2019-07-25
申请号：US16239830
申请日：2019-01-04
Inventor： Yuanjie XU , Shan GAO , Pengcheng ZANG , Ting LI , Zhonglin CAO , Jing HE , Wei GUO , Shiqi CHEN
Abstract: The present disclosure provides a mobile terminal, including: a display screen provided at a front side of the mobile terminal; a first camera provided at a back side of the mobile terminal; and an instruction generator provided between the first camera and the display screen, and configured to generate a homepage key instruction signal in response to the first camera being pressed by a first operation mode, and the homepage key instruction signal instructs the display screen to wake up or display a home page.
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公开(公告)号：US20160181437A1
公开(公告)日：2016-06-23
申请号：US14443882
申请日：2014-09-28
Applicant: BOE Technology Group Co., Ltd.
Inventor： Qianqian BU , Wei GUO
IPC: H01L29/786 , H01L21/027 , H01L21/3213 , H01L29/423 , H01L21/02 , H01L29/66 , H01L27/12 , H01L29/167 , H01L21/265 , H01L21/3105
CPC classification number: H01L29/78675 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L21/02675 , H01L21/0273 , H01L21/0274 , H01L21/26513 , H01L21/28 , H01L21/31058 , H01L21/32134 , H01L21/32139 , H01L27/1222 , H01L27/1248 , H01L27/1274 , H01L27/1288 , H01L29/167 , H01L29/42372 , H01L29/42384 , H01L29/66757 , H01L29/786 , H01L29/78621
Abstract: A thin film transistor, its manufacturing method, and a display device are provided. The method comprises: forming a gate metal layer (35), forming a step-like gate structure (352) by one patterning process; performing a first ion implantation procedure to forming a first heavily doped area (39a) and a second heavily doped area (39b), the first heavily doped area (39a) being separated apart from the second heavily doped area (39b) by a first length; forming a gate electrode (353) from the step-like gate structure (352); performing a second ion implantation procedure to form a first lightly doped area (38a) and a second lightly doped area (38b), the first lightly doped area (38a) being separated apart from the second lightly doped area (38b) by a second length less than the first length. By the above method, the process for manufacturing the LTPS TFT having the lightly doped source/drain structure can be simplified.
Abstract translation: 提供薄膜晶体管，其制造方法和显示装置。 该方法包括：通过一个图案化工艺形成栅极金属层（35），形成阶梯状栅极结构（352）; 执行第一离子注入程序以形成第一重掺杂区域（39a）和第二重掺杂区域（39b），所述第一重掺杂区域（39a）与第二重掺杂区域（39b）分离第一长度 ; 从阶梯状栅极结构（352）形成栅电极（353）; 执行第二离子注入过程以形成第一轻掺杂区域（38a）和第二轻掺杂区域（38b），所述第一轻掺杂区域（38a）与第二轻掺杂区域（38b）分离第二长度 小于第一长度。 通过上述方法，可以简化用于制造具有轻掺杂源极/漏极结构的LTPS TFT的工艺。
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公开(公告)号：US20220326582A1
公开(公告)日：2022-10-13
申请号：US16977938
申请日：2019-11-28
Inventor： Yue DU , Wei GUO , Ke DAI , Lei GUO , Liangliang JIANG , Jiaqing LIU , Yuanhui GUO
IPC: G02F1/1362 , G02F1/1368
Abstract: The present disclosure provides an array substrate, a dimming liquid crystal panel and a display panel. The array substrate includes: a first transparent electrode layer with a plurality of slit structures, wherein the first transparent electrode layer comprises a plurality of domains, the plurality of domains comprise at least two types of domains, each of the plurality of domains is adjacent to different types of domains along both a row direction and a column direction; and a plurality of gate lines extending along the row direction and a plurality of data lines extending along the column direction, the plurality of gate lines and the plurality of data lines crossing to define a plurality of dimming regions arranged in an array.
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10.发明申请METALLIC OXIDE THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND THEIR MANUFACTURING METHODS, DISPLAY DEVICE 有权金属氧化物薄膜晶体管，阵列基板及其制造方法，显示装置公开(公告)号：US20160365366A1
公开(公告)日：2016-12-15
申请号：US14771267
申请日：2014-12-12
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
IPC: H01L27/12 , H01L21/4757 , H01L21/02 , H01L29/24 , H01L21/467 , H01L29/423 , H01L29/786 , H01L29/66 , H01L21/027
CPC classification number: H01L27/1225 , H01L21/02186 , H01L21/02266 , H01L21/02565 , H01L21/0273 , H01L21/31122 , H01L21/34 , H01L21/467 , H01L21/47573 , H01L27/12 , H01L27/124 , H01L27/1288 , H01L29/24 , H01L29/42356 , H01L29/66969 , H01L29/786 , H01L29/7869 , H01L29/78696
Abstract: The present invention provides a metallic oxide thin film transistor and its manufacturing method, an array substrate and its manufacturing method, as well as a display device, which is belong to the field of thin film transistor manufacturing technology. The method for manufacturing the metallic oxide thin film transistor comprises a step of forming patterns of an oxide active layer and an etch stopping layer through a one-time patterning process.
Abstract translation: 本发明提供属于薄膜晶体管制造技术领域的金属氧化物薄膜晶体管及其制造方法，阵列基板及其制造方法以及显示装置。 制造金属氧化物薄膜晶体管的方法包括通过一次图案化工艺形成氧化物有源层和蚀刻停止层的图案的步骤。
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