公开(公告)号：US07273060B2

公开(公告)日：2007-09-25

申请号：US11450291

申请日：2006-06-12

申请人： Bakul P. Patel ,  Mihaela Cernat ,  Robert J. Small

发明人： Bakul P. Patel ,  Mihaela Cernat ,  Robert J. Small

IPC分类号： B08B3/04 ,  B08B3/08 ,  C11D7/32 ,  C11D7/50

CPC分类号： C23F3/06 ,  C11D3/0094 ,  C11D3/046 ,  C11D3/2058 ,  C11D3/2075 ,  C11D3/2082 ,  C11D3/2086 ,  C11D3/26 ,  C11D3/28 ,  C11D3/30 ,  C11D3/32 ,  C11D3/33 ,  C11D3/3445 ,  C11D3/43 ,  C11D11/0047

摘要： The present invention relates to methods and compositions for treating a surface of a substrate by foam technology that includes at least one treatment chemical. The invention more particularly relates to the removal of undesired matter from the surface of substrates with small features, where such undesired matter may comprise organic and inorganic compounds such as particles, films from photoresist material, and traces of any other impurities such as metals deposited during planarization or etching. A method according to the present invention for treating a surface of a substrate comprises generating a foam from a liquid composition, wherein the liquid composition comprises a gas; a surfactant; and at least one component selected from the group consisting of a fluoride, a hydroxylamine, an amine and periodic acid; contacting the foam with the surface of a substrate; and, removing the undesired matter from the surface of the substrate.

公开(公告)号：US07456140B2

公开(公告)日：2008-11-25

申请号：US10920494

申请日：2004-08-17

申请人： Robert J. Small ,  Bakul P. Patel ,  Wai Mun Lee ,  Douglas Holmes ,  Jerome Daviot ,  Chris Reid

发明人： Robert J. Small ,  Bakul P. Patel ,  Wai Mun Lee ,  Douglas Holmes ,  Jerome Daviot ,  Chris Reid

IPC分类号： C11D7/50

CPC分类号： H01L21/02071 ,  C09K13/08 ,  G03F7/423 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02063 ,  H01L21/31133

摘要： A composition for the stripping of photoresist and the cleaning of residues from substrates, and for silicon oxide etch, comprising from about 0.01 percent by weight to about 10 percent by weight of one or more fluoride compounds, from about 10 percent by weight to about 95% by weight of a sulfoxide or sulfone solvent, and from about 20 percent by weight to about 50 percent by weight water. The composition may contain corrosion inhibitors, chelating agents, co-solvents, basic amine compounds, surfactants, acids and bases.

摘要翻译： 一种用于剥离光致抗蚀剂的组合物，以及用于清洁底物的残留物和用于氧化硅蚀刻的组合物，其包含约0.01重量％至约10重量％的一种或多种氟化物，约10重量％至约95重量％ 重量百分比的亚砜或砜溶剂，和约20％至约50％重​​量的水。 组合物可以含有腐蚀抑制剂，螯合剂，助溶剂，碱性胺化合物，表面活性剂，酸和碱。

公开(公告)号：US06777380B2

公开(公告)日：2004-08-17

申请号：US09903064

申请日：2001-07-10

申请人： Robert J. Small ,  Bakul P. Patel ,  Wai Mun Lee ,  Douglas Holmes ,  Jerome Daviot ,  Chris Reid

发明人： Robert J. Small ,  Bakul P. Patel ,  Wai Mun Lee ,  Douglas Holmes ,  Jerome Daviot ,  Chris Reid

IPC分类号： G03C500

CPC分类号： G03F7/423 ,  C09K13/08 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02052 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/31111 ,  H01L21/31133

摘要： A composition for the stripping of photoresist and the cleaning of residues from substrates, and for silicon oxide etch, comprising from about 0.01 percent by weight to about 10 percent by weight of one or more fluoride compounds, from about 10 percent by weight to about 95% by weight of a sulfoxide or sulfone solvent, and from about 20 percent by weight to about 50 percent by weight water. The composition may contain corrosion inhibitors, chelating agents, co-solvents, basic amine compounds, surfactants, acids and bases.

摘要翻译： 一种用于剥离光致抗蚀剂的组合物，以及用于清洁底物的残留物和用于氧化硅蚀刻的组合物，其包含约0.01重量％至约10重量％的一种或多种氟化物，约10重量％至约95重量％ 重量百分比的亚砜或砜溶剂，和约20％至约50％重​​量的水。 组合物可以含有腐蚀抑制剂，螯合剂，助溶剂，碱性胺化合物，表面活性剂，酸和碱。

公开(公告)号：US06235693B1

公开(公告)日：2001-05-22

申请号：US09354834

申请日：1999-07-16

申请人： Jun Cheng ,  Robert J. Small ,  Bakul P. Patel

发明人： Jun Cheng ,  Robert J. Small ,  Bakul P. Patel

IPC分类号： C11D704

CPC分类号： H01L21/02071 ,  C11D7/261 ,  C11D7/28 ,  C11D7/3281 ,  C11D7/34 ,  C11D7/5004 ,  C11D11/0047

摘要： A composition for the cleaning of residues from substrates from about 0.01 percent by weight to about 10 percent by weight of one or more fluoride compounds, from about 20 percent by weight to about 50 percent by weight water, from about 20 percent by weight to about 80 percent by weight of an lactam solvent and from 0 to about 50 weight percent of an organic sulfoxide or glycol solvent. The composition has a pH between about 6 and about 10. Additionally, the composition optionally contains corrosion inhibitors, chelating agents, surfactants, acids and bases. In use of the composition, a substrate is contacted with the composition for a time and at a temperature that permits cleaning of the substrate.

摘要翻译： 用于从底物清洗残留物的组合物，其为约0.01重量％至约10重量％的一种或多种氟化物，约20重量％至约50重量％的水，约20重量％至约 80重量％的内酰胺溶剂和0至约50重量％的有机亚砜或二醇溶剂。 组合物的pH为约6至约10.另外，组合物任选地包含腐蚀抑制剂，螯合剂，表面活性剂，酸和碱。 在使用该组合物时，使衬底与组合物接触一段时间并且允许清洁衬底的温度。

公开(公告)号：US07144848B2

公开(公告)日：2006-12-05

申请号：US10689620

申请日：2003-10-22

申请人： De-Ling Zhou ,  Jing Qiao ,  Shihying Lee ,  Bakul P. Patel ,  Becky Min Hon

发明人： De-Ling Zhou ,  Jing Qiao ,  Shihying Lee ,  Bakul P. Patel ,  Becky Min Hon

IPC分类号： C11D7/50 ,  C11D7/32

CPC分类号： H01L21/02071 ,  B24B37/042 ,  C09D9/00 ,  C11D3/2058 ,  C11D3/2065 ,  C11D3/2086 ,  C11D3/30 ,  C11D3/3427 ,  C11D3/3472 ,  C11D3/43 ,  C11D7/261 ,  C11D7/263 ,  C11D7/265 ,  C11D7/267 ,  C11D7/32 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3227 ,  C11D7/3245 ,  C11D7/3254 ,  C11D7/3263 ,  C11D7/3272 ,  C11D7/3281 ,  C11D7/34 ,  C11D7/5013 ,  C11D11/0047 ,  C11D11/0052 ,  C23G1/103 ,  C23G1/205 ,  G03F7/425 ,  H01L21/02063 ,  H01L21/31133 ,  H01L21/76814 ,  H01L21/76885

摘要： The present invention is directed to resist and etching residue removing compositions containing at least one nucleophilic amine compound possessing reduction and oxidation potentials, a two-carbon atom linkage alkanolamine compound, and optionally water and/or one or more corrosion inhibitors. The compositions may be substantially free of hydroxylamine, polar organic solvents, water, corrosion inhibitors, or a combination thereof. The compositions are useful in processes for removing resists and etching residue from metal or metal alloy substrates or substrate layers used in micro-circuitry fabrication.

摘要翻译： 本发明涉及抗蚀和蚀刻含有至少一种具有还原和氧化电位的亲核胺化合物，二碳原子键链烷醇胺化合物和任选的水和/或一种或多种腐蚀抑制剂的残余物去除组合物。 组合物可以基本上不含羟胺，极性有机溶剂，水，腐蚀抑制剂或其组合。 该组合物可用于从用于微电路制造的金属或金属合金基底或基底层去除抗蚀剂和蚀刻残留物的方法中。