公开(公告)号：US10014283B1

公开(公告)日：2018-07-03

申请号：US15782239

申请日：2017-10-12

申请人： Jing Qiao Corporation Limited

发明人： Chin-Liang Chiang ,  Neng-Huang Chu ,  Yi-Lun Wu

IPC分类号： H01L25/065 ,  H01L23/367 ,  H01L21/48 ,  H01L21/52 ,  H01L21/56 ,  H01L23/495 ,  H01L23/522 ,  H01L23/15 ,  H01L21/60 ,  H01L21/603 ,  H01L25/04 ,  H01L25/11 ,  H01L25/075

CPC分类号： H01L25/0657 ,  H01L21/4846 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/4882 ,  H01L21/52 ,  H01L21/563 ,  H01L23/13 ,  H01L23/15 ,  H01L23/36 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/373 ,  H01L23/4952 ,  H01L23/5226 ,  H01L23/5385 ,  H01L25/043 ,  H01L25/0756 ,  H01L25/117 ,  H01L2021/60022 ,  H01L2021/60277 ,  H01L2021/603 ,  H01L2224/16225

摘要： The present invention provides a semiconductor device including a first glass substrate, a first integrated chip, a first anisotropic conductive film, a second glass substrate, a second integrated chip, a second anisotropic conductive film, and a packaging body.

公开(公告)号：US07144848B2

公开(公告)日：2006-12-05

申请号：US10689620

申请日：2003-10-22

申请人： De-Ling Zhou ,  Jing Qiao ,  Shihying Lee ,  Bakul P. Patel ,  Becky Min Hon

发明人： De-Ling Zhou ,  Jing Qiao ,  Shihying Lee ,  Bakul P. Patel ,  Becky Min Hon

IPC分类号： C11D7/50 ,  C11D7/32

CPC分类号： H01L21/02071 ,  B24B37/042 ,  C09D9/00 ,  C11D3/2058 ,  C11D3/2065 ,  C11D3/2086 ,  C11D3/30 ,  C11D3/3427 ,  C11D3/3472 ,  C11D3/43 ,  C11D7/261 ,  C11D7/263 ,  C11D7/265 ,  C11D7/267 ,  C11D7/32 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3227 ,  C11D7/3245 ,  C11D7/3254 ,  C11D7/3263 ,  C11D7/3272 ,  C11D7/3281 ,  C11D7/34 ,  C11D7/5013 ,  C11D11/0047 ,  C11D11/0052 ,  C23G1/103 ,  C23G1/205 ,  G03F7/425 ,  H01L21/02063 ,  H01L21/31133 ,  H01L21/76814 ,  H01L21/76885

摘要： The present invention is directed to resist and etching residue removing compositions containing at least one nucleophilic amine compound possessing reduction and oxidation potentials, a two-carbon atom linkage alkanolamine compound, and optionally water and/or one or more corrosion inhibitors. The compositions may be substantially free of hydroxylamine, polar organic solvents, water, corrosion inhibitors, or a combination thereof. The compositions are useful in processes for removing resists and etching residue from metal or metal alloy substrates or substrate layers used in micro-circuitry fabrication.

摘要翻译： 本发明涉及抗蚀和蚀刻含有至少一种具有还原和氧化电位的亲核胺化合物，二碳原子键链烷醇胺化合物和任选的水和/或一种或多种腐蚀抑制剂的残余物去除组合物。 组合物可以基本上不含羟胺，极性有机溶剂，水，腐蚀抑制剂或其组合。 该组合物可用于从用于微电路制造的金属或金属合金基底或基底层去除抗蚀剂和蚀刻残留物的方法中。