公开(公告)号：US20130099345A1

公开(公告)日：2013-04-25

申请号：US13622864

申请日：2012-09-19

申请人： BANDGAP ENGINEERING, INC.

发明人： Marcie R. BLACK ,  Joanne FORZIATI ,  Michael JURA ,  Jeff MILLER ,  Brian MURPHY ,  Adam STANLEY

IPC分类号： H01L21/285 ,  H01L31/0224

CPC分类号： H01L31/02366 ,  H01L21/283 ,  H01L21/28506 ,  H01L29/0676 ,  H01L29/413 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/0224 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/035218 ,  H01L31/035227 ,  H01L31/068 ,  H01L31/18 ,  Y02E10/50 ,  Y02E10/547

摘要： A process is provided for contacting a nanostructured surface. In that process, a substrate is provided having a nanostructured material on a surface, the substrate being conductive and the nanostructured material being coated with an insulating material. A portion of the nanostructured material is at least partially removed. A conductor is deposited on the substrate in such a way that it is in electrical contact with the substrate through the area where the nanostructured material has been at least partially removed.

公开(公告)号：US20140366934A1

公开(公告)日：2014-12-18

申请号：US14467029

申请日：2014-08-24

申请人： Bandgap Engineering, Inc.

发明人： Faris MODAWAR ,  Marcie R. BLACK ,  Brian MURPHY ,  Jeff MILLER ,  Mike JURA

IPC分类号： H01L31/0352 ,  H01L31/028 ,  H01L31/0288 ,  H01L31/18

CPC分类号： H01L31/035227 ,  H01L31/02167 ,  H01L31/028 ,  H01L31/0284 ,  H01L31/0288 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1868 ,  Y10S977/762

摘要： Another aspect of the present disclosure relates to a device including a substrate, having a top surface and a bottom surface; an array of nanowires having a base and a top surface, the base contacting the top surface of the substrate; a contacting structure including the same material as the substrate having a non-nanostructured surface of a dimension suitable for forming an electrical contact, located on the same side of the substrate as the array of silicon nanowires; wherein the contacting structure is doped with a greater impurity concentration than the nanowire array, thereby forming a selective emitter.

摘要翻译： 本公开的另一方面涉及包括具有顶表面和底表面的基底的装置; 具有基底和顶表面的纳米线阵列，所述基底接触所述基底的顶表面; 接触结构包括与衬底相同的材料，其具有适于形成电接触的尺寸的非纳米结构化表面，位于与硅纳米线阵列相同的衬底侧; 其中所述接触结构被掺杂有比所述纳米线阵列更大的杂质浓度，由此形成选择性发射极。