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    COOPERATIVE RECEPTION DIVERSITY APPARATUS AND METHOD BASED ON SIGNAL POINT REARRANGEMENT OR SUPERPOSITION MODULATION IN RELAY SYSTEM
    1.
    发明申请
    COOPERATIVE RECEPTION DIVERSITY APPARATUS AND METHOD BASED ON SIGNAL POINT REARRANGEMENT OR SUPERPOSITION MODULATION IN RELAY SYSTEM 失效
    基于继电器系统信号点接收或超控调制的合作接收多样性设备及方法

    公开(公告)号：US20110014865A1

    公开(公告)日：2011-01-20

    申请号：US12921905

    申请日：2008-12-31

    申请人： Bangwon Seo ,  Heesoo Lee ,  Jae Young Ahn ,  Chung Gu Kang ,  Hyun Seok Ryu ,  Sun Mi Park

    发明人： Bangwon Seo ,  Heesoo Lee ,  Jae Young Ahn ,  Chung Gu Kang ,  Hyun Seok Ryu ,  Sun Mi Park

    IPC分类号： H04B7/165

    CPC分类号： H04B7/022 ,  H04B7/026 ,  H04B7/15592 ,  H04L1/0045 ,  H04L2001/0097

    摘要： Disclosed is an apparatus and method for cooperative reception diversity based on signal point rearrangement or superposition modulation in a relay system, the method includes receiving a superposition-modulated symbol from a transmitting unit, demodulating the received symbol and decoding the demodulated symbol, modulating the received symbol using superposition modulation different from the superposition modulation used in the transmitting unit, and then relaying the modulated symbol to a reception unit, calculating an LLR of the symbol when a certain superposition-modulated symbol is received from a transmitting unit, calculating an LLR of a symbol modulated using superposition modulation different from the superposition modulation used in the transmitting unit when the symbol modulated using the different superposition modulation is received from a relay station, and summing and combining an LLR of each symbol received through the transmitting unit and relay station.

    摘要翻译： 公开了一种基于中继系统中的信号点重排或叠加调制的协同接收分集的装置和方法，该方法包括从发送单元接收叠加调制符号，对接收到的符号进行解调并对解调后的符号进行解调， 符号，使用与发送单元中使用的叠加调制不同的叠加调制，然后将调制符号中继到接收单元，当从发送单元接收到某个重叠调制符号时，计算符号的LLR，计算LLR 当从中继站接收到使用不同的叠加调制调制的符号时，使用与发送单元中使用的叠加调制不同的叠加调制的符号进行调制，并且对通过发送单元和中继站接收的每个符号的LLR进行求和和合并。

    Cooperative reception diversity apparatus and method based on signal point rearrangement or superposition modulation in relay system
    2.
    发明授权
    Cooperative reception diversity apparatus and method based on signal point rearrangement or superposition modulation in relay system 失效
    基于中继系统信号点重排或叠加调制的协同接收分集装置及方法

    公开(公告)号：US08577284B2

    公开(公告)日：2013-11-05

    申请号：US12921905

    申请日：2008-12-31

    申请人： Bangwon Seo ,  Heesoo Lee ,  Jae Young Ahn ,  Chung Gu Kang ,  Hyun Seok Ryu ,  Sun Mi Park

    发明人： Bangwon Seo ,  Heesoo Lee ,  Jae Young Ahn ,  Chung Gu Kang ,  Hyun Seok Ryu ,  Sun Mi Park

    IPC分类号： H04B7/15 ,  H04B3/36 ,  H04B7/14

    CPC分类号： H04B7/022 ,  H04B7/026 ,  H04B7/15592 ,  H04L1/0045 ,  H04L2001/0097

    摘要： A method and apparatus for method for providing cooperative reception diversity based on signal point rearrangement and superposition modulation performed at a relay station is discussed. A first technique performs superposition modulation at a relay station and a second technique employs signal point rearrangement at a relay station. The superposition modulation is a different type of superposition modulation than that employed by the transmitter of the signal. Similarly, the signal point rearrangement is a different type of signal point rearrangement than that employed by the transmitter of the signal. As a result of the superposition modulation or signal point rearrangement performed by the relay station, the reliability of a signal received by a reception unit at the destination receiver is improved.

    摘要翻译： 讨论了一种基于在中继站执行的信号点重排和叠加调制提供协同接收分集的方法和装置。 第一技术在中继站进行叠加调制，第二技术在中继站采用信号点重排。 叠加调制是与信号发射机采用的叠加调制不同的叠加调制方式。 类似地，信号点重排是与信号的发射机采用的不同类型的信号点重排。 作为由中继站执行的叠加调制或信号点重排的结果，改善了由目的地接收机处的接收单元接收的信号的可靠性。

    CVD apparatus and method of forming semiconductor superlattice structure using the same
    5.
    发明授权
    CVD apparatus and method of forming semiconductor superlattice structure using the same 有权
    CVD装置及使用其形成半导体超晶格结构的方法

    公开(公告)号：US08822338B2

    公开(公告)日：2014-09-02

    申请号：US13276729

    申请日：2011-10-19

    申请人： Jong Sun Maeng ,  Ki Sung Kim ,  Bum Joon Kim ,  Suk Ho Yoon ,  Hyun Seok Ryu ,  Sung Tae Kim

    发明人： Jong Sun Maeng ,  Ki Sung Kim ,  Bum Joon Kim ,  Suk Ho Yoon ,  Hyun Seok Ryu ,  Sung Tae Kim

    IPC分类号： H01L21/44

    CPC分类号： C23C16/303 ,  C23C16/45574 ,  C23C16/45578 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

    摘要： Provided is a chemical vapor deposition (CVD) apparatus, including: a reaction chamber including an inner pipe having an internal space, and an external pipe configured to cover the inner pipe so as to maintain a sealing state thereof; a wafer holder disposed within the inner pipe and receiving a plurality of wafers stacked therein; and a gas supplier including at least one stem pipe disposed at the outside of the reaction chamber so as to supply a reactive gas thereto, a plurality of branch pipes connected to the stem pipe to introduce the reactive gas from the outside of the reaction chamber into the reaction chamber, and a plurality of spray nozzles provided with the branch pipes to spray the reactive gas to the plurality of respective wafers.

    摘要翻译： 提供了一种化学气相沉积（CVD）装置，包括：反应室，包括具有内部空间的内管，以及外管，其构造成覆盖内管以保持其密封状态; 设置在所述内管内并且容纳堆叠在其中的多个晶片的晶片保持器; 以及气体供给器，其包括设置在反应室外侧的至少一个杆管，以便向其供应反应性气体;多个分支管，连接到杆管，以将反应气体从反应室的外部引入到 反应室，以及设置有分支管的多个喷嘴，以将反应气体喷射到多个相应的晶片。

    CVD APPARATUS AND METHOD OF FORMING SEMICONDUCTOR SUPERLATTICE STRUCTURE USING THE SAME
    6.
    发明申请
    CVD APPARATUS AND METHOD OF FORMING SEMICONDUCTOR SUPERLATTICE STRUCTURE USING THE SAME 有权
    CVD装置和使用其形成半导体超导结构的方法

    公开(公告)号：US20120171815A1

    公开(公告)日：2012-07-05

    申请号：US13276729

    申请日：2011-10-19

    申请人： Jong Sun MAENG ,  Ki Sung Kim ,  Bum Joon Kim ,  Suk Ho Yoon ,  Hyun Seok Ryu ,  Sung Tae Kim

    发明人： Jong Sun MAENG ,  Ki Sung Kim ,  Bum Joon Kim ,  Suk Ho Yoon ,  Hyun Seok Ryu ,  Sung Tae Kim

    IPC分类号： H01L21/50 ,  C23C16/458 ,  C23C16/455

    CPC分类号： C23C16/303 ,  C23C16/45574 ,  C23C16/45578 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

    摘要： Provided is a chemical vapor deposition (CVD) apparatus, including: a reaction chamber including an inner pipe having an internal space, and an external pipe configured to cover the inner pipe so as to maintain a sealing state thereof; a wafer holder disposed within the inner pipe and receiving a plurality of wafers stacked therein; and a gas supplier including at least one stem pipe disposed at the outside of the reaction chamber so as to supply a reactive gas thereto, a plurality of branch pipes connected to the stem pipe to introduce the reactive gas from the outside of the reaction chamber into the reaction chamber, and a plurality of spray nozzles provided with the branch pipes to spray the reactive gas to the plurality of respective wafers.

    摘要翻译： 提供了一种化学气相沉积（CVD）装置，包括：反应室，包括具有内部空间的内管，以及外管，其构造成覆盖内管以保持其密封状态; 设置在所述内管内并且容纳堆叠在其中的多个晶片的晶片保持器; 以及气体供给器，其包括设置在反应室外侧的至少一个杆管，以便向其供应反应性气体;多个分支管，连接到杆管，以将反应气体从反应室的外部引入到 反应室，以及设置有分支管的多个喷嘴，以将反应气体喷射到多个相应的晶片。

    Method of manufacturing semiconductor light emitting device
    7.
    发明授权
    Method of manufacturing semiconductor light emitting device 有权
    制造半导体发光器件的方法

    公开(公告)号：US08859314B2

    公开(公告)日：2014-10-14

    申请号：US13523571

    申请日：2012-06-14

    申请人： Jong Sun Maeng ,  Ki Ho Park ,  Bum Joon Kim ,  Hyun Seok Ryu ,  Jung Hyun Lee ,  Boung Kyun Kim ,  Ki Sung Kim ,  Suk Ho Yoon

    发明人： Jong Sun Maeng ,  Ki Ho Park ,  Bum Joon Kim ,  Hyun Seok Ryu ,  Jung Hyun Lee ,  Boung Kyun Kim ,  Ki Sung Kim ,  Suk Ho Yoon

    IPC分类号： H01L33/32 ,  H01L33/00

    CPC分类号： H01L33/007 ,  H01L21/67109 ,  H01L21/68764 ,  H01L21/68771 ,  H01L33/0079

    摘要： There is provided a method of manufacturing a semiconductor light emitting device, the method including: sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a semiconductor growth substrate to form a light emitting part; forming a support part on the second conductivity type semiconductor layer to be coupled to the light emitting part; separating the semiconductor growth substrate from the light emitting part; and applying an etching gas to the semiconductor growth substrate to remove a residue of the first conductivity type semiconductor layer from a surface of the semiconductor growth substrate.

    摘要翻译： 提供一种制造半导体发光器件的方法，该方法包括：在半导体生长衬底上依次生长第一导电类型半导体层，有源层和第二导电类型半导体层，以形成发光部分; 在要耦合到所述发光部分的所述第二导电类型半导体层上形成支撑部分; 将半导体生长衬底与发光部分分离; 以及向所述半导体生长衬底施加蚀刻气体以从所述半导体生长衬底的表面去除所述第一导电类型半导体层的残留物。

    CVD APPARATUS
    8.
    发明申请
    CVD APPARATUS 审中-公开
    CVD装置

    公开(公告)号：US20120167824A1

    公开(公告)日：2012-07-05

    申请号：US13285596

    申请日：2011-10-31

    申请人： Jong Sun MAENG ,  Ki Sung Kim ,  Bum Joon Kim ,  Hyun Seok Ryu ,  Sung Tae Kim

    发明人： Jong Sun MAENG ,  Ki Sung Kim ,  Bum Joon Kim ,  Hyun Seok Ryu ,  Sung Tae Kim

    IPC分类号： H01L21/00 ,  C23C16/458 ,  C23C16/455

    CPC分类号： C23C16/45572 ,  C23C16/45578

    摘要： A chemical vapor deposition (CVD) apparatus, including: a reaction chamber including an internal chamber having an internal space, an external chamber configured to cover the internal chamber so as to maintain a sealing state thereof; a wafer holder disposed within the internal chamber for a plurality of wafers stacked therein; a gas supplier including an inner pipe having an inner path, an external pipe having an external path, a refrigeration pipe having a cooling path. The inner path of the inner pipe supplies a first process gas into the reaction chamber. The external path of the external pipe surrounds the inner pipe to supply a second process gas therethrough. The refrigeration pipe supplies a refrigerant to prevent temperature rise in the inner pipe.

    摘要翻译： 一种化学气相沉积（CVD）装置，包括：反应室，包括具有内部空间的内部室，外部室，其被构造成覆盖所述内部室以保持其密封状态; 设置在所述内部腔室内用于堆叠在其中的多个晶片的晶片保持器; 包括具有内部路径的内管，具有外部路径的外部管的气体供给器，具有冷却路径的制冷管。 内管的内部路径将第一工艺气体供应到反应室中。 外部管道的外部路径围绕内部管道以供应通过其中的第二处理气体。 制冷管道供应制冷剂以防止内管中的温度上升。

    METHOD FOR RECYCLING WAFER
    9.
    发明申请
    METHOD FOR RECYCLING WAFER 审中-公开
    回收方法

    公开(公告)号：US20120097184A1

    公开(公告)日：2012-04-26

    申请号：US13275099

    申请日：2011-10-17

    申请人： Ki Ho PARK ,  Kong Tan Sa ,  Suk Ho Yoon ,  Hyun Seok Ryu ,  Bo A Shin

    发明人： Ki Ho PARK ,  Kong Tan Sa ,  Suk Ho Yoon ,  Hyun Seok Ryu ,  Bo A Shin

    IPC分类号： H01L21/02 ,  B08B5/00

    CPC分类号： H01L21/02032

    摘要： A method for recycling a wafer is provided. The method removes residues remaining on the wafer separated from a semiconductor layer, using HCl and Cl2 gases under high temperature and low pressure conditions. According to the method, damage of a surface of the wafer is minimized. In addition, since reduction in thickness and an outer diameter of the wafer is minimized, a number of attempts at reprocessing the wafer may be increased.

    摘要翻译： 提供一种再循环晶片的方法。 该方法使用HCl和Cl2气体在高温和低压条件下除去剩余在半导体层上残留的晶片上的残留物。 根据该方法，使晶片表面的损伤最小化。 此外，由于晶片的厚度和外径的减小被最小化，所以可以增加重新处理晶片的尝试次数。