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    Fin-FET gain cells
    2.
    发明授权
    Fin-FET gain cells 有权

    公开(公告)号：US11127455B2

    公开(公告)日：2021-09-21

    申请号：US16699003

    申请日：2019-11-28

    申请人： Bar-Ilan University

    发明人： Adam Teman ,  Amir Shalom ,  Robert Giterman ,  Alexander Fish

    IPC分类号： G11C11/4096 ,  H01L27/108 ,  H01L23/528 ,  H01L27/02 ,  H01L29/78

    摘要： A FinFET gain cell includes a write port, read port and storage node. The write port includes at least one write FinFET transistor and has write word-line (WWL) and write bit-line (WBL) inputs. The read port includes at least one FinFET read transistor and has a read word-line (RWL) input and a read bit-line (RBL) output. The storage node stores a data level written from said WBL. The storage nodes includes a single layer interconnect which connects the write port output diffusion connection to the read port input gate connection. The height of the single layer interconnect at the write port output diffusion connection is different from the height of the single layer interconnect at the read port input gate connection.

    High-density memory macro
    3.
    发明申请
    High-density memory macro 审中-公开

    公开(公告)号：US20190074040A1

    公开(公告)日：2019-03-07

    申请号：US16121672

    申请日：2018-09-05

    申请人： Mellanox Technologies, Ltd. ,  Bar-Ilan University

    发明人： Elad Mentovich ,  Narkis Geuli ,  Robert Giterman ,  Alexander Fish ,  Adam Teman

    IPC分类号： G11C7/10 ,  G11C11/403 ,  G11C11/4097 ,  G11C11/412

    摘要： A high-density memory includes: a data write interface, a data read interface, an array of memory cells and level-shifting write drivers. The data write interface inputs data written to the memory. The data read interface outputs data read from the memory. The array of memory cells stores data input at the data write interface and outputs stored data to the data read interface. Each of the memory cells includes at least one low threshold voltage (LVT) read transistor and at least one respective regular threshold voltage (RVT) transistor, so as to obtain high-speed read operations. The level-shifting write drivers supply shifted write wordline voltages to the array, so as to obtain high-speed write operations.

    Gain cell embedded DRAM in fully depleted silicon-on-insulator technology
    4.
    发明授权
    Gain cell embedded DRAM in fully depleted silicon-on-insulator technology 有权

    公开(公告)号：US11309008B2

    公开(公告)日：2022-04-19

    申请号：US17257893

    申请日：2019-07-09

    申请人： Bar-Ilan University

    发明人： Robert Giterman ,  Adam Teman

    IPC分类号： G11C11/34 ,  G11C11/404 ,  G11C11/4091 ,  G11C11/4096

    摘要： An FD-SOI GC-edRAM gain cell includes: a write bit line terminal connected to a WBL; a read bit line terminal connected to a RBL; a write trigger terminal connected to a WWL, for inputting a write trigger signal; a read trigger terminal put connected to a RWL, for inputting a read trigger signal; at least one body voltage terminal connected to a respective body voltage; and multiple FD-SOI transistors. The FD-SOI transistors are interconnected to form a storage node for retaining a data signal. The bodies of at least two of the transistors are coupled in a single well to a body voltage terminal. The write trigger signal triggers writing an input data signal from the write bit line terminal to the storage node and the read trigger signal triggers outputting the retained data signal from the storage node to the read bit line terminal.

    Transistor gain cell with feedback
    6.
    发明授权
    Transistor gain cell with feedback 有权

    公开(公告)号：US09691445B2

    公开(公告)日：2017-06-27

    申请号：US15306796

    申请日：2015-04-30

    申请人： Bar-Ilan University

    发明人： Robert Giterman ,  Adam Teman ,  Pascal Meinerzhagen ,  Andreas Burg ,  Alexander Fish

    IPC分类号： G11C5/06 ,  G11C7/10 ,  G11C11/4097 ,  G11C11/412 ,  G11C5/02 ,  H01L27/11

    CPC分类号： G11C7/10 ,  G11C5/025 ,  G11C5/06 ,  G11C11/403 ,  G11C11/4097 ,  G11C11/412 ,  H01L27/11 ,  H01L27/1104

    摘要： A gain cell includes a write bit line input, a read bit line output, a write trigger input and a read trigger input. The gain cell also includes a write transistor, retention element and read transistor. Each of the transistors includes a respective first diffusion connection, gate connection and second diffusion connection. The write transistor first diffusion connection is connected to the write bit line input and the write transistor gate connection is connected to the write trigger input. The read transistor first diffusion connection being connected to the read bit line output and the second diffusion connection is connected to the read trigger input. The retention element buffers between write transistor and the read transistor during data retention. The retention element also connects or disconnects a write transistor diffusion connection to/from a constant voltage in accordance with a retained data level at the read transistor gate connection.