公开(公告)号：US06423193B1

公开(公告)日：2002-07-23

申请号：US09385233

申请日：1999-08-30

申请人： Barry Miller ,  Rafi Kalish ,  Xu Shi

发明人： Barry Miller ,  Rafi Kalish ,  Xu Shi

IPC分类号： C25B900

CPC分类号： C23C14/0605 ,  C02F1/46109 ,  C25B1/26 ,  C25B11/0442 ,  G01N27/308

摘要： An electrode (22) formed from a layer (24) of tetrahedral carbon doped with nitrogen (taC:N) has both electroanalytical and electrosynthetic applications. The electrode includes a substrate material (26), such as a silicon wafer, for supporting the taC:N layer. The electrode has good durability under a high anodic potential and high selectivity for conversion of chloride ions to chlorine, and for other electron transfer reactions. The electrode is readily formed at ambient temperatures by vacuum deposition of carbon and nitrogen ions on to the substrate. Masking of the substrate during deposition allows the formation of microelectrode arrays.

摘要翻译： 由掺杂有氮的四面体碳（taC：N）的层（24）形成的电极（22）具有电分析和电合成应用。 电极包括用于支撑taC：N层的诸如硅晶片的衬底材料（26）。 该电极在高阳极电位下具有良好的耐久性，并且将氯离子转化为氯以及其它电子转移反应具有高选择性。 通过将碳和氮离子真空沉积到衬底上，在环境温度下容易地形成电极。 在沉积期间掩蔽基底可以形成微电极阵列。

公开(公告)号：US5391269A

公开(公告)日：1995-02-21

申请号：US84689

申请日：1993-06-29

申请人： Jason O. Fiering ,  Barry Miller ,  Joseph Shmulovich

发明人： Jason O. Fiering ,  Barry Miller ,  Joseph Shmulovich

IPC分类号： H01L21/306 ,  G02B6/36 ,  H01L21/3063 ,  B23H3/00

CPC分类号： H01L21/3063 ,  Y10T29/49169

摘要： We have found that etching of a body that comprises exposed Si as well as a Ti-comprising metal layer (e.g., a patterned Ti/Pt layer) in an amine-based anisotropic etchant for Si (e.g., 100.degree. C. EDP) frequently results in undesirable changes in the Ti-comprising metal layer. We have also found that the changes can be substantially reduced or eliminated by electrolytic means, namely, by making the metal layer the anode in an electrolytic cell that contains the etchant.

摘要翻译： 我们已经发现，在基于胺的各向异性蚀刻剂（例如，100℃EDP）中经常蚀刻包括暴露的Si以及包含Ti的金属层（例如，图案化的Ti / Pt层）的主体 导致含Ti的金属层的不期望的变化。 我们还发现，通过电解方式，即通过在含有蚀刻剂的电解槽中使金属层成为阳极，可以显着地减少或消除这些变化。

公开(公告)号：US5308796A

公开(公告)日：1994-05-03

申请号：US053840

申请日：1993-04-27

申请人： Leonard C. Feldman ,  Gregg S. Higashi ,  Cecilia Y. Mak ,  Barry Miller

发明人： Leonard C. Feldman ,  Gregg S. Higashi ,  Cecilia Y. Mak ,  Barry Miller

IPC分类号： H01L21/28 ,  C23C18/31 ,  H01L21/288 ,  H01L21/768 ,  H01L23/522 ,  H01L21/441

CPC分类号： H01L21/288 ,  H01L21/76879

摘要： It has been found that selective metallization in integrated circuits is expeditiously achieved through a copper plating procedure. In this process, palladium silicide is used as a catalytic surface and an electroless plating bath is employed to introduce copper plating only in regions where the silicide is present. Use of this procedure yields superior filling of vias and windows with excellent conductivity.

摘要翻译： 已经发现，通过镀铜工艺快速实现集成电路中的选择性金属化。 在该方法中，使用硅化钯作为催化剂表面，并且使用化学镀浴仅在存在硅化物的区域中引入镀铜。 使用这种方法可以获得优良的导电性通孔和窗户的填充。

公开(公告)号：US5298117A

公开(公告)日：1994-03-29

申请号：US94650

申请日：1993-07-19

申请人： Karrie J. Hanson ,  Barry Miller ,  Barbara J. Sapjeta ,  Akshay V. Shah ,  Ken M. Takahashi

发明人： Karrie J. Hanson ,  Barry Miller ,  Barbara J. Sapjeta ,  Akshay V. Shah ,  Ken M. Takahashi

IPC分类号： B01D19/04 ,  C11D1/722 ,  C11D3/00 ,  C23F1/18 ,  H01L21/3213 ,  H01L21/48 ,  H01L23/538 ,  H05K3/06 ,  H05K3/38 ,  H01L21/00

CPC分类号： B01D19/0404 ,  C11D1/722 ,  C11D3/0026 ,  C23F1/18 ,  H01L21/32134 ,  H01L21/4846 ,  H01L23/538 ,  H05K3/067 ,  H01L2924/0002 ,  H05K3/388

摘要： The linewidth in patterns produced by etching copper layers is more easily maintained using a specific etching medium. In particular, this medium includes aqueous hydrofluoric acid, copper chloride, and an additional chloride salt. The etching medium is also particularly useful for bilayer metal constructions such as the copper/titanium structure found in many multichip modules.

摘要翻译： 使用特定的蚀刻介质更容易地保持通过蚀刻铜层产生的图案中的线宽。 特别地，该介质包括氢氟酸水溶液，氯化铜和另外的氯化物盐。 蚀刻介质对于双层金属结构也是特别有用的，例如在许多多芯片模块中发现的铜/钛结构。

公开(公告)号：US4082624A

公开(公告)日：1978-04-04

申请号：US747239

申请日：1976-12-03

申请人： Adam Heller ,  Barry Miller ,  Richard George Vadimsky

发明人： Adam Heller ,  Barry Miller ,  Richard George Vadimsky

IPC分类号： C01G55/00 ,  C25D3/50 ,  H01H1/02 ,  C01B9/02

CPC分类号： C01G55/002 ,  C25D3/50 ,  H01H1/0201

摘要： The ruthenium compound [Ru.sub.2 N(H.sub.2 O).sub.2 Cl.sub.8 ]K.sub.3 is prepared by refluxing a mixture of hydrated water soluble ruthenium chloride, having approximately 40% ruthenium content, and sulphamic acid, the latter having approximately half the molar concentration of the former, for several hours and then precipitating the desired compound by adding solutions of potassium chloride and hydrochloric acid. Electrical contacts on the reeds of sealed reed switches produced by electroplating from an aqueous solution of the salt produced in this manner are found to be particularly resistant to the thermal shock involved in the sealing of the switches.

公开(公告)号：US4082602A

公开(公告)日：1978-04-04

申请号：US792580

申请日：1977-05-02

申请人： Kuang-Chou Chang ,  Adam Heller ,  Barry Miller

发明人： Kuang-Chou Chang ,  Adam Heller ,  Barry Miller

IPC分类号： H01M14/00 ,  H01G9/20 ,  H01L21/306 ,  H01L21/66 ,  H01L31/02 ,  H01L31/04 ,  H01L31/18

CPC分类号： H01G9/20 ,  H01L31/02021 ,  Y02E10/50 ,  Y10S136/29

摘要： A quality control technique is based on the observation that trapping centers contribute to inefficient operation of junction devices. Devices are irradiated by a first radiation source of intensity sufficient to populate traps and a second radiation source of varying wavelength. Trapping centers are detected by a deviation from the expected photovoltaic output-incident wavelength relationship. Such "structure" is utilized as the basis for altering production conditions to minimize currents of such centers. While the procedure is of general applicability, it is particularly suitable as applied to photovoltaic cells.

公开(公告)号：US20200215956A1

公开(公告)日：2020-07-09

申请号：US16729314

申请日：2019-12-28

申请人： Barry Miller

发明人： Barry Miller

IPC分类号： B60P3/34 ,  B62D21/11 ,  B62D21/09 ,  B62D21/02

摘要： The revolutionary concept can be used on any caravan design or motorhome with slight alterations to the internal layout. The storage or other purpose unit serves as a windbreaker in the caravan design. Storage under the caravan or motorhome with the raised floor. The internal layout ideally will have a kitchen with island bench on the side that is opening FIG. 1. Where the opening is beside a bedroom ideally there will be a space at the end of the bed where a person can access the decking FIG. 3. All the wall materials are standard caravan materials which could be an aluminium or fibreglass sandwich and the decking material, internal wall when upright, will be a light Malibu or similar to give strength and durability. The two side walls are similar to gates with pin hinges. The decking wall will have stands that will support the deck to the ground being height adjustable. The caravan is fully operational without expanding the living areas or only expanding some of the area.

公开(公告)号：US20050126014A1

公开(公告)日：2005-06-16

申请号：US10991761

申请日：2004-11-18

申请人： Mohammed Yamin ,  Barry Miller

发明人： Mohammed Yamin ,  Barry Miller

IPC分类号： A45D29/02 ,  B26B13/16 ,  B26B17/00 ,  B26B3/06

CPC分类号： B26B13/16 ,  A45D29/02 ,  B26B17/00

摘要： The present invention relates generally to the field of cutting devices and specifically relates to cutting tools comprising a locking means in the form of an integral screw. In particular, the invention relates to a cutting device comprising an integral spring, capable of facilitating opening of the blades. According to one embodiment of this invention, the device comprises a locking screw and spring in scissors and nippers. According to an embodiment of this invention, the blades are self-sharpening.

摘要翻译： 本发明一般涉及切割装置领域，具体涉及包括一体式螺钉形式的锁定装置的切削工具。 特别地，本发明涉及一种切割装置，其包括能够有助于打开叶片的一体的弹簧。 根据本发明的一个实施例，该装置包括剪刀和镊子中的锁定螺钉和弹簧。 根据本发明的实施例，叶片是自磨削的。

公开(公告)号：US5620558A

公开(公告)日：1997-04-15

申请号：US219686

申请日：1994-03-28

申请人： Karrie J. Hanson ,  Barry Miller ,  Barbara J. Sapjeta ,  Akshay V. Shah ,  Ken M. Takahashi

发明人： Karrie J. Hanson ,  Barry Miller ,  Barbara J. Sapjeta ,  Akshay V. Shah ,  Ken M. Takahashi

IPC分类号： B01D19/04 ,  C11D1/722 ,  C11D3/00 ,  C23F1/18 ,  H01L21/3213 ,  H01L21/48 ,  H01L23/538 ,  H05K3/06 ,  H05K3/38 ,  C23F1/02 ,  H01L21/00

CPC分类号： B01D19/0404 ,  C11D1/722 ,  C11D3/0026 ,  C23F1/18 ,  H01L21/32134 ,  H01L21/4846 ,  H01L23/538 ,  H05K3/067 ,  H01L2924/0002 ,  H05K3/388

摘要： The linewidth in patterns produced by etching copper layers is more easily maintained using a specific etching medium. In particular, this medium includes aqueous hydrofluoric acid, copper chloride, and an additional chloride salt. The etching medium is also particularly useful for bilayer metal constructions such as the copper/titanium structure found in many multichip modules.

摘要翻译： 使用特定的蚀刻介质更容易地保持通过蚀刻铜层产生的图案中的线宽。 特别地，该介质包括氢氟酸水溶液，氯化铜和另外的氯化物盐。 蚀刻介质对于双层金属结构也是特别有用的，例如在许多多芯片模块中发现的铜/钛结构。

公开(公告)号：US4343870A

公开(公告)日：1982-08-10

申请号：US184925

申请日：1980-09-08

申请人： Adam Heller ,  Hans J. Lewerenz ,  Barry Miller

发明人： Adam Heller ,  Hans J. Lewerenz ,  Barry Miller

IPC分类号： H01G9/20 ,  H01M14/00 ,  H01M6/36

CPC分类号： H01M14/005 ,  H01G9/20

摘要： A semiconductor liquid junction photocell having a photovoltaic junction between a p-type photoactive electrode comprising InP or Si and an electrolyte comprising a redox couple selected from the group consisting of V.sup.2+ /V.sup.3+, Nb.sup.4+ /Nb.sup.5+, and Ti.sup.3+ /Ti.sup.4+ produces a stable photocurrent output.

摘要翻译： 具有包含InP或Si的p型光电极和包含选自V2 + / V3 +，Nb4 + / Nb5 +和Ti3 + / Ti4 +的氧化还原电极的电解质的半导体液体结型光电池产生稳定的光电流输出 。