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23 条记录 (耗时 0.026 秒)

    Method of operating a liquid-semiconductor junction photocell
    2.
    发明授权
    Method of operating a liquid-semiconductor junction photocell 失效
    操作液体半导体结光电池的方法

    公开(公告)号：US4118548A

    公开(公告)日：1978-10-03

    申请号：US769950

    申请日：1977-02-18

    申请人： Kuang-Chou Chang ,  Adam Heller ,  Barry Miller

    发明人： Kuang-Chou Chang ,  Adam Heller ,  Barry Miller

    IPC分类号： H01G9/20 ,  H01L31/04 ,  H01M14/00 ,  H01M6/30 ,  H01M6/36

    CPC分类号： H01G9/20 ,  H01M14/005 ,  Y02E10/542

    摘要： Liquid-semiconductor photocells are described which produce a stable photocurrent output over extended periods of time by controllably removing material from the semiconductor surface in such a manner as to maintain the integrity of the junction characteristics. The removal may be either by photoetching or by chemical reaction with the electrolyte or with agents added to the electrolyte.

    摘要翻译： 描述了液体半导体光电池，其通过以保持连接特性的完整性的方式可控地从半导体表面去除材料而在长时间内产生稳定的光电流输出。 去除可以是通过光刻或通过与电解质或添加到电解质中的试剂的化学反应来进行。

    Semiconductor liquid junction photocell using surface modified GaAs electrode
    4.
    发明授权
    Semiconductor liquid junction photocell using surface modified GaAs electrode 失效
    半导体液晶光电池使用表面改性GaAs电极

    公开(公告)号：US4182796A

    公开(公告)日：1980-01-08

    申请号：US907396

    申请日：1978-05-18

    申请人： Adam Heller ,  Barry Miller ,  Bruce A. Parkinson

    发明人： Adam Heller ,  Barry Miller ,  Bruce A. Parkinson

    IPC分类号： H01M14/00 ,  H01G9/20 ,  H01L31/04 ,  H01M6/30 ,  H01M6/36

    CPC分类号： H01L31/04 ,  H01G9/20 ,  Y02E10/542

    摘要： A semiconductor liquid junction photocell using a photoactive electrode comprising GaAs has greatly improved solar energy to electrically conversion efficiency when compared to prior art semiconductor liquid junction photocells using GaAs electrodes. The improved efficiency is obtained by material, such as ruthenium, cobalt, rhodium or lead, on the electrode surface. Efficiency is still further increased by texturizing the surface of the GaAs electrode prior to addition of the material. Efficiencies under AM1 conditions are approximately 12 percent.

    摘要翻译： 与使用GaAs电极的现有技术的半导体液晶光电池相比，使用包含GaAs的光电极的半导体液体结型光电池与太阳能相比具有极大地改善的电转换效率。 通过在电极表面上的诸如钌，钴，铑或铅的材料获得改进的效率。 在添加材料之前，通过对GaAs电极的表面进行纹理化来进一步提高效率。 AM1条件下的效率约为12％。

    Liquid-semiconductor junction photocells
    5.
    发明授权
    Liquid-semiconductor junction photocells 失效
    液 - 半导体结光电池

    公开(公告)号：US4127449A

    公开(公告)日：1978-11-28

    申请号：US739471

    申请日：1976-11-08

    申请人： Adam Heller ,  Barry Miller

    发明人： Adam Heller ,  Barry Miller

    IPC分类号： H01G9/20 ,  H01L31/04 ,  H01M14/00 ,  H01M4/04 ,  H01M6/36

    CPC分类号： H01M14/005 ,  H01G9/20 ,  Y02E10/542 ,  Y10S205/915

    摘要： Liquid-semiconductor photocells using chalcogenide semiconductors have been advanced recently to the point where they compete favorably with silicon devices for solar power conversion. However, in common with silicon devices, the semiconductor needs to be a single crystal. This fact makes solar power impractically expensive. According to this invention, the chalcogenide semiconductor is made by anodizing cadmium or bismuth in a sulfide, selenide or telluride electrolyte. The anodized element, when operated photovoltaically in an electrolyte similar to the anodizing solution, produces useful power conversion and is relatively inexpensive.

    摘要翻译： 使用硫属元素半导体的液体半导体光电池最近已经被推进到与太阳能转换的硅器件相竞争的地步。 然而，与硅器件相同，半导体需要是单晶。 这个事实使得太阳能发电成本不高。 根据本发明，通过在硫化物，硒化物或碲化物电解质中阳极氧化镉或铋来制备硫族化物半导体。 阳极氧化元件在与阳极氧化溶液类似的电解质中光伏发电时产生有用的功率转换并且相对便宜。

    Liquid-semiconductor photocell using sintered electrode
    6.
    发明授权
    Liquid-semiconductor photocell using sintered electrode 失效
    液晶半导体光电池使用烧结电极

    公开(公告)号：US4084044A

    公开(公告)日：1978-04-11

    申请号：US769949

    申请日：1977-02-18

    申请人： Adam Heller ,  Barry Miller ,  Murray Robbins

    发明人： Adam Heller ,  Barry Miller ,  Murray Robbins

    IPC分类号： H01G9/20 ,  H01L31/04 ,  H01M14/00 ,  H01M6/30

    CPC分类号： H01G9/20 ,  H01M14/005 ,  Y02E10/542 ,  Y10T29/49108

    摘要： Liquid-semiconductor photocells have received attention recently for use in solar power devices. Alternatives to single crystal semiconductors have been sought to reduce the cost of the photocells. According to this invention, the semiconductor is made from a pressure sintered and vapor annealed semiconductor. The electrode is relatively inexpensive to make and the efficiency of the solar cell compares favorably to the efficiency of solar cells using single crystal electrodes.

    摘要翻译： 近来，液体半导体光电池已经受到关注，用于太阳能发电装置。 已经寻求单晶半导体的替代方案来降低光电池的成本。 根据本发明，半导体由压力烧结和蒸气退火的半导体制成。 电极制造成本相对便宜，并且太阳能电池的效率与使用单晶电极的太阳能电池的效率相比是有利的。

    Method of making an article comprising a silicon body
    9.
    发明授权
    Method of making an article comprising a silicon body 失效
    制造包含硅体的制品的方法

    公开(公告)号：US5391269A

    公开(公告)日：1995-02-21

    申请号：US84689

    申请日：1993-06-29

    申请人： Jason O. Fiering ,  Barry Miller ,  Joseph Shmulovich

    发明人： Jason O. Fiering ,  Barry Miller ,  Joseph Shmulovich

    IPC分类号： H01L21/306 ,  G02B6/36 ,  H01L21/3063 ,  B23H3/00

    CPC分类号： H01L21/3063 ,  Y10T29/49169

    摘要： We have found that etching of a body that comprises exposed Si as well as a Ti-comprising metal layer (e.g., a patterned Ti/Pt layer) in an amine-based anisotropic etchant for Si (e.g., 100.degree. C. EDP) frequently results in undesirable changes in the Ti-comprising metal layer. We have also found that the changes can be substantially reduced or eliminated by electrolytic means, namely, by making the metal layer the anode in an electrolytic cell that contains the etchant.

    摘要翻译： 我们已经发现，在基于胺的各向异性蚀刻剂（例如，100℃EDP）中经常蚀刻包括暴露的Si以及包含Ti的金属层（例如，图案化的Ti / Pt层）的主体 导致含Ti的金属层的不期望的变化。 我们还发现，通过电解方式，即通过在含有蚀刻剂的电解槽中使金属层成为阳极，可以显着地减少或消除这些变化。

    Nitrogen doped carbon electrodes
    10.
    发明授权
    Nitrogen doped carbon electrodes 失效
    氮掺杂碳电极

    公开(公告)号：US06423193B1

    公开(公告)日：2002-07-23

    申请号：US09385233

    申请日：1999-08-30

    申请人： Barry Miller ,  Rafi Kalish ,  Xu Shi

    发明人： Barry Miller ,  Rafi Kalish ,  Xu Shi

    IPC分类号： C25B900

    CPC分类号： C23C14/0605 ,  C02F1/46109 ,  C25B1/26 ,  C25B11/0442 ,  G01N27/308

    摘要： An electrode (22) formed from a layer (24) of tetrahedral carbon doped with nitrogen (taC:N) has both electroanalytical and electrosynthetic applications. The electrode includes a substrate material (26), such as a silicon wafer, for supporting the taC:N layer. The electrode has good durability under a high anodic potential and high selectivity for conversion of chloride ions to chlorine, and for other electron transfer reactions. The electrode is readily formed at ambient temperatures by vacuum deposition of carbon and nitrogen ions on to the substrate. Masking of the substrate during deposition allows the formation of microelectrode arrays.

    摘要翻译： 由掺杂有氮的四面体碳（taC：N）的层（24）形成的电极（22）具有电分析和电合成应用。 电极包括用于支撑taC：N层的诸如硅晶片的衬底材料（26）。 该电极在高阳极电位下具有良好的耐久性，并且将氯离子转化为氯以及其它电子转移反应具有高选择性。 通过将碳和氮离子真空沉积到衬底上，在环境温度下容易地形成电极。 在沉积期间掩蔽基底可以形成微电极阵列。