-
公开(公告)号：US11848204B2
公开(公告)日：2023-12-19
申请号：US17827198
申请日：2022-05-27
发明人： Stephen E. Savas , Shawming Ma
IPC分类号： H01L21/02 , H01L21/67 , H01J37/32 , H01L21/263 , H01L21/762
CPC分类号： H01L21/02315 , H01J37/32119 , H01J37/32651 , H01L21/02348 , H01L21/67207 , H01J37/32449 , H01L21/263 , H01L21/762
摘要： Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus includes a plasma chamber. The plasma processing apparatus includes a dielectric wall forming at least a portion of the plasma chamber. The plasma processing apparatus includes an inductive coupling element located proximate the dielectric wall. The plasma processing apparatus includes an ultraviolet light source configured to emit an ultraviolet light beam onto a metal surface that faces an interior volume of the plasma chamber. The plasma processing apparatus includes a controller configured to control the ultraviolet light source.
-
公开(公告)号：US20210050213A1
公开(公告)日：2021-02-18
申请号：US16547724
申请日：2019-08-22
发明人： Stephen E. Savas , Shawming Ma
摘要： Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus includes a plasma chamber. The plasma processing apparatus includes a dielectric wall forming at least a portion of the plasma chamber. The plasma processing apparatus includes an inductive coupling element located proximate the dielectric wall. The plasma processing apparatus includes an ultraviolet light source configured to emit an ultraviolet light beam onto a metal surface that faces an interior volume of the plasma chamber. The plasma processing apparatus includes a controller configured to control the ultraviolet light source.
-
公开(公告)号：US11348784B2
公开(公告)日：2022-05-31
申请号：US16547724
申请日：2019-08-22
发明人： Stephen E. Savas , Shawming Ma
IPC分类号： H01L21/02 , H01L21/67 , H01L21/263 , H01J37/32 , H01L21/762
摘要： Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus includes a plasma chamber. The plasma processing apparatus includes a dielectric wall forming at least a portion of the plasma chamber. The plasma processing apparatus includes an inductive coupling element located proximate the dielectric wall. The plasma processing apparatus includes an ultraviolet light source configured to emit an ultraviolet light beam onto a metal surface that faces an interior volume of the plasma chamber. The plasma processing apparatus includes a controller configured to control the ultraviolet light source.
-
公开(公告)号：US12002652B2
公开(公告)日：2024-06-04
申请号：US17536733
申请日：2021-11-29
发明人： Stephen E. Savas , Shawming Ma
IPC分类号： H01J37/32
CPC分类号： H01J37/32183 , H01J37/32119 , H01J37/32697 , H01J37/32715 , H01J37/32899 , H01J2237/3321 , H01J2237/334
摘要： Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus can include a plasma chamber configured to be able to hold a plasma. The plasma processing apparatus can include a dielectric window forming at least a portion of a wall of the plasma chamber. The plasma processing apparatus can include an inductive coupling element located proximate the dielectric window. The inductive coupling element can be configured to generate a plasma from the process gas in the plasma chamber when energized with radio frequency (RF) energy. The plasma processing apparatus can include a processing chamber having a workpiece support configured to support a workpiece. The plasma processing apparatus can include an electrostatic shield located between the inductive coupling element and the dielectric window. The electrostatic shield can be grounded via a tunable reactive impedance circuit to a ground reference.
-
公开(公告)号：US20240071754A1
公开(公告)日：2024-02-29
申请号：US18503681
申请日：2023-11-07
发明人： Stephen E. Savas , Shawming Ma
CPC分类号： H01L21/02315 , H01J37/32119 , H01J37/32651 , H01L21/02348 , H01L21/67207 , H01L21/263
摘要： Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus includes a plasma chamber. The plasma processing apparatus includes a dielectric wall forming at least a portion of the plasma chamber. The plasma processing apparatus includes an inductive coupling element located proximate the dielectric wall. The plasma processing apparatus includes an ultraviolet light source configured to emit an ultraviolet light beam onto a metal surface that faces an interior volume of the plasma chamber. The plasma processing apparatus includes a controller configured to control the ultraviolet light source.
-
公开(公告)号：US20210020411A1
公开(公告)日：2021-01-21
申请号：US16514237
申请日：2019-07-17
发明人： Stephen E. Savas , Shawming Ma
IPC分类号： H01J37/32
摘要： Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus can include a plasma chamber configured to be able to hold a plasma. The plasma processing apparatus can include a dielectric window forming at least a portion of a wall of the plasma chamber. The plasma processing apparatus can include an inductive coupling element located proximate the dielectric window. The inductive coupling element can be configured to generate a plasma from the process gas in the plasma chamber when energized with radio frequency (RF) energy. The plasma processing apparatus can include a processing chamber having a workpiece support configured to support a workpiece. The plasma processing apparatus can include an electrostatic shield located between the inductive coupling element and the dielectric window. The electrostatic shield can be grounded via a tunable reactive impedance circuit to a ground reference.
-
公开(公告)号：US20210020404A1
公开(公告)日：2021-01-21
申请号：US16514464
申请日：2019-07-17
发明人： Stephen E. Savas , Shawming Ma
IPC分类号： H01J37/32
摘要： Plasma processing apparatus and associated methods are provided. In one example, a method can include admitting a process gas into a plasma chamber. The method can include exciting with RF energy an inductive coupling element to initiate ignition of a plasma induced in the process gas. The method can include adjusting an RF voltage of an electrostatic shield located between the inductive coupling element and the plasma chamber. The electrostatic shield can have a stray capacitance to a ground reference. The method can include conducting an ion-assisted etching process on the workpiece based at least in part on the RF voltage of the electrostatic shield.
-
公开(公告)号：US20240297019A1
公开(公告)日：2024-09-05
申请号：US18651606
申请日：2024-04-30
发明人： Stephen E. Savas , Shawming Ma
IPC分类号： H01J37/32
CPC分类号： H01J37/32183 , H01J37/32119 , H01J37/32697 , H01J37/32715 , H01J37/32899 , H01J2237/3321 , H01J2237/334
摘要： Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus can include a plasma chamber configured to be able to hold a plasma. The plasma processing apparatus can include a dielectric window forming at least a portion of a wall of the plasma chamber. The plasma processing apparatus can include an inductive coupling element located proximate the dielectric window. The inductive coupling element can be configured to generate a plasma from the process gas in the plasma chamber when energized with radio frequency (RF) energy. The plasma processing apparatus can include a processing chamber having a workpiece support configured to support a workpiece. The plasma processing apparatus can include an electrostatic shield located between the inductive coupling element and the dielectric window. The electrostatic shield can be grounded via a tunable reactive impedance circuit to a ground reference.
-
公开(公告)号：US20220310359A1
公开(公告)日：2022-09-29
申请号：US17827198
申请日：2022-05-27
发明人： Stephen E. Savas , Shawming Ma
IPC分类号： H01J37/32
摘要： Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus includes a plasma chamber. The plasma processing apparatus includes a dielectric wall forming at least a portion of the plasma chamber. The plasma processing apparatus includes an inductive coupling element located proximate the dielectric wall. The plasma processing apparatus includes an ultraviolet light source configured to emit an ultraviolet light beam onto a metal surface that faces an interior volume of the plasma chamber. The plasma processing apparatus includes a controller configured to control the ultraviolet light source.
-
公开(公告)号：US20220165614A1
公开(公告)日：2022-05-26
申请号：US17670819
申请日：2022-02-14
发明人： Stephen E. Savas
IPC分类号： H01L21/768 , H01J27/14 , H01J37/305
摘要： Plasma processing systems and methods are provided. In one example, a system includes a processing chamber having a workpiece support. The workpiece is configured to support a workpiece. The system includes a plasma source configured to induce a plasma from a process gas in a plasma chamber to generate one or more species of negative ions. The system includes a grid structure configured to accelerate the one or more negative ions towards the workpiece. The grid structure can include a first grid plate, a second grid plate, and one or more magnetic elements positioned between the first grid plate and second grid plate to reduce electrons accelerated through the first grid plate. The system can include a neutralizer cell disposed. downstream of the grid structure configured to detach extra electrons from ions of the one or more species of negative ions to generate energetic neutral species for processing the workpiece.
-
-
-
-
-
-
-
-
-
搜索结果
16 条记录 (耗时 0.032 秒)
