公开(公告)号：US09112127B2

公开(公告)日：2015-08-18

申请号：US14003207

申请日：2012-03-02

申请人： Berthold Hahn ,  Andreas Leber

发明人： Berthold Hahn ,  Andreas Leber

IPC分类号： H01L33/64 ,  H01L33/00 ,  H01L33/42 ,  H01L33/62

CPC分类号： H01L33/64 ,  H01L33/005 ,  H01L33/42 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2924/00

摘要： A method can be used to provide at least one optoelectronic semiconductor component, A carrier includes a first surface and a second surface opposite the first surface. At least one optoelectronic semiconductor chip is arranged on the first surface of the carrier. The optoelectronic semiconductor chip is formed with at least one n-side region and at least one p-side region, and is applied with the n-side region or the p-side region to the first surface. An electrically insulating enclosure is arranged on exposed points of the outer faces of the semiconductor chip and of the first surface of the carrier. The electrically insulating enclosure is partially removed. After removal at least one major face, remote from the carrier, of the optoelectronic semiconductor chip is free of the electrically insulating enclosure at least in places.

摘要翻译： 一种方法可用于提供至少一个光电子半导体部件。载体包括第一表面和与第一表面相对的第二表面。 至少一个光电半导体芯片布置在载体的第一表面上。 光电半导体芯片形成有至少一个n侧区域和至少一个p侧区域，并且将n侧区域或p侧区域施加到第一表面。 电绝缘外壳设置在半导体芯片的外表面和载体的第一表面的暴露点上。 电绝缘外壳部分拆除。 至少在某些地方，除去光电半导体芯片远离载体的至少一个主要表面没有电绝缘外壳。

公开(公告)号：US20140042466A1

公开(公告)日：2014-02-13

申请号：US14003207

申请日：2012-03-02

申请人： Berthold Hahn ,  Andreas Leber

发明人： Berthold Hahn ,  Andreas Leber

IPC分类号： H01L33/64

CPC分类号： H01L33/64 ,  H01L33/005 ,  H01L33/42 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2924/00

摘要： A method can be used to provide at least one optoelectronic semiconductor component, A carrier includes a first surface and a second surface opposite the first surface. At least one optoelectronic semiconductor chip is arranged on the first surface of the carrier. The optoelectronic semiconductor chip is formed with at least one n-side region and at least one p-side region, and is applied with the n-side region or the p-side region to the first surface. An electrically insulating enclosure is arranged on exposed points of the outer faces of the semiconductor chip and of the first surface of the carrier. The electrically insulating enclosure is partially removed. After removal at least one major face, remote from the carrier, of the optoelectronic semiconductor chip is free of the electrically insulating enclosure at least in places.

摘要翻译： 一种方法可用于提供至少一个光电子半导体部件。载体包括第一表面和与第一表面相对的第二表面。 至少一个光电子半导体芯片布置在载体的第一表面上。 光电半导体芯片形成有至少一个n侧区域和至少一个p侧区域，并且将n侧区域或p侧区域施加到第一表面。 电绝缘外壳设置在半导体芯片的外表面和载体的第一表面的暴露点上。 电绝缘外壳部分拆除。 至少在某些地方，除去光电半导体芯片远离载体的至少一个主要表面没有电绝缘外壳。

公开(公告)号：US20120273824A1

公开(公告)日：2012-11-01

申请号：US13517110

申请日：2010-12-15

申请人： Nikolaus Gmeinwieser ,  Matthias Sabathil ,  Andreas Leber

发明人： Nikolaus Gmeinwieser ,  Matthias Sabathil ,  Andreas Leber

IPC分类号： H01L33/58

CPC分类号： H01L33/42 ,  H01L33/02 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L2224/48091 ,  H01L2924/00014

摘要： An optoelectronic semiconductor chip includes a semiconductor layer sequence having an active layer and a light-outcoupling layer applied at least indirectly on a radiation permeable surface of the semiconductor layer sequence. A material of the light-outcoupling layer is different from a material of the semiconductor layer sequence and refractive indices of the materials of the light-outcoupling layer and of the semiconductor layer sequence differ from each other by 20% at most. Recesses in the light-outcoupling layer form facets, wherein the recesses do not penetrate the light-outcoupling layer completely. The facets have a total area of at least 25% of an area of the radiation permeable surface.

摘要翻译： 光电半导体芯片包括半导体层序列，其具有至少间接地施加在半导体层序列的可辐射透过表面上的有源层和发光耦合层。 光输出耦合层的材料与半导体层序列的材料不同，并且光输出耦合层和半导体层序列的材料的折射率最多彼此相差20％。 光输出耦合层中的凹陷形成刻面，其中凹部不完全穿透光输出耦合层。 小面的总面积为辐射透过面积的至少25％。

公开(公告)号：US20110316028A1

公开(公告)日：2011-12-29

申请号：US13124707

申请日：2009-09-16

申请人： Martin Strassburg ,  Lutz Hoeppel ,  Matthias Peter ,  Ulrich Zehnder ,  Tetsuya Taki ,  Andreas Leber ,  Rainer Butendeich ,  Thomas Bauer

发明人： Martin Strassburg ,  Lutz Hoeppel ,  Matthias Peter ,  Ulrich Zehnder ,  Tetsuya Taki ,  Andreas Leber ,  Rainer Butendeich ,  Thomas Bauer

IPC分类号： H01L33/60

CPC分类号： H01L33/40 ,  H01L2924/0002 ,  H01L2924/00

摘要： An optoelectronic semiconductor component comprising a semiconductor layer sequence (3) based on a nitride compound semiconductor and containing an n-doped region (4), a p-doped region (8) and an active zone (5) arranged between the n-doped region (4) and the p-doped region (8) is specified. The p-doped region (8) comprises a p-type contact layer (7) composed of InxAlyGa1-x-yN where 0≦x≦1, 0≦y≦1 and x+y≦1. The p-type contact layer (7) adjoins a connection layer (9) composed of a metal, a metal alloy or a transparent conductive oxide, wherein the p-type contact layer (7) has first domains (1) having a Ga-face orientation and second domains (2) having an N-face orientation at an interface with the connection layer (9).

摘要翻译： 一种光电子半导体部件，包括基于氮化物化合物半导体的半导体层序列（3），并且包含n掺杂区域（4），p掺杂区域（8）和有源区域（5） 区域（4）和p掺杂区域（8）。 p掺杂区域（8）包括由In x Al y Ga 1-x-y N组成的p型接触层（7），其中0和nlE; x和nlE; 1,0和nlE; y和nlE; 1和x + y和nlE; 1。 p型接触层（7）与由金属，金属合金或透明导电氧化物构成的连接层（9）相邻，其中p型接触层（7）具有第一畴（1） 面取向和在与连接层（9）的界面处具有N面取向的第二域（2）。

公开(公告)号：US07008810B2

公开(公告)日：2006-03-07

申请号：US10804514

申请日：2004-03-19

申请人： Christine Höss ,  Andreas Weimar ,  Andreas Leber ,  Alfred Lell ,  Helmut Fischer ,  Volker Harle

发明人： Christine Höss ,  Andreas Weimar ,  Andreas Leber ,  Alfred Lell ,  Helmut Fischer ,  Volker Harle

IPC分类号： H01L21/00

CPC分类号： H01L33/005 ,  H01S5/021 ,  H01S5/2081 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/32341 ,  Y10S438/951

摘要： A method for fabricating at least one mesa or ridge structure in a layer or layer sequence, in which a sacrificial layer (4) is applied and patterned above the layer or layer sequence. A mask layer is applied and patterned above the sacrificial layer for definition of the mesa or ridge dimensions. The sacrificial layer (4) and of the layer or layer sequence are removed so that the mesa or ridge structure is formed in the layer or layer sequence. A part of the sacrificial layer (4) is selectively removed from the side areas thereof which have been uncovered in the previous step, so that a sacrificial layer remains which is narrower in comparison with a layer that has remained above the sacrificial layer as seen from the layer or layer sequence. A coating is applied at least to the sidewalls of the structure produced in the previous steps so that the side areas of the residual sacrificial layer are not completely overformed by the coating material. The sacrificial layer (4) is removed so that the layer that has remained above the sacrificial layer as seen from the layer or layer sequence is lifted off. A method is also disclosed for fabricating at least one gain-controlled laser diode in a layer sequence, in which method steps analogous to those described above are employed.

摘要翻译： 一种用于在层或层序列中制造至少一个台面或脊状结构的方法，其中牺牲层（4）被施加并在层或层序列上形成图案。 掩模层被施加和图案化在牺牲层上方以定义台面或脊尺寸。 去除牺牲层（4）和层或层序列，使得台层或脊结构以层或层序列形成。 牺牲层（4）的一部分从其前面的步骤中未被覆盖的侧面区域选择性地去除，从而与牺牲层上方的层相比较，牺牲层保持较窄，如从 层或层序列。 至少将涂层施加到在前述步骤中制造的结构的侧壁上，使得残余牺牲层的侧面区域不会被涂层材料完全覆盖。 去除牺牲层（4），使得从层或层序列看到的保留在牺牲层上方的层被提升。 还公开了一种用于在层序列中制造至少一个增益控制的激光二极管的方法，其中采用与上述类似的方法步骤。

公开(公告)号：US08907359B2

公开(公告)日：2014-12-09

申请号：US13124707

申请日：2009-09-16

申请人： Martin Strassburg ,  Lutz Höppel ,  Matthias Peter ,  Ulrich Zehnder ,  Tetsuya Taki ,  Andreas Leber ,  Rainer Butendeich ,  Thomas Bauer

发明人： Martin Strassburg ,  Lutz Höppel ,  Matthias Peter ,  Ulrich Zehnder ,  Tetsuya Taki ,  Andreas Leber ,  Rainer Butendeich ,  Thomas Bauer

IPC分类号： H01L33/60 ,  H01L33/40

CPC分类号： H01L33/40 ,  H01L2924/0002 ,  H01L2924/00

摘要： An optoelectronic semiconductor component comprising a semiconductor layer sequence (3) based on a nitride compound semiconductor and containing an n-doped region (4), a p-doped region (8) and an active zone (5) arranged between the n-doped region (4) and the p-doped region (8) is specified. The p-doped region (8) comprises a p-type contact layer (7) composed of InxAlyGa1-x-yN where 0≦x≦1, 0≦y≦1 and x+y≦1. The p-type contact layer (7) adjoins a connection layer (9) composed of a metal, a metal alloy or a transparent conductive oxide, wherein the p-type contact layer (7) has first domains (1) having a Ga-face orientation and second domains (2) having an N-face orientation at an interface with the connection layer (9).

摘要翻译： 一种光电子半导体部件，包括基于氮化物化合物半导体的半导体层序列（3），并且包含n掺杂区域（4），p掺杂区域（8）和有源区域（5） 区域（4）和p掺杂区域（8）。 p掺杂区域（8）包括由In x Al y Ga 1-x-y N组成的p型接触层（7），其中0和nlE; x和nlE; 1,0和nlE; y和nlE; 1和x + y和nlE; 1。 p型接触层（7）与由金属，金属合金或透明导电氧化物构成的连接层（9）相邻，其中p型接触层（7）具有第一畴（1） 面取向和在与连接层（9）的界面处具有N面取向的第二域（2）。

公开(公告)号：US08816353B2

公开(公告)日：2014-08-26

申请号：US13138034

申请日：2009-11-02

申请人： Nikolaus Gmeinwieser ,  Matthias Sabathil ,  Andreas Leber

发明人： Nikolaus Gmeinwieser ,  Matthias Sabathil ,  Andreas Leber

IPC分类号： H01L29/15 ,  H01L21/00 ,  H01L33/22

CPC分类号： H01L33/22

摘要： In at least one embodiment of the optoelectronic semiconductor chip (1), the latter comprises a semiconductor layer sequence (2) comprising at least one active layer (3) designed for generating an electromagnetic radiation. Furthermore, the optoelectronic semiconductor chip (1) has coupling-out structures (4), which are fitted at least indirectly on a radiation passage area (20) of the semiconductor layer sequence (2). In this case, a material of the coupling-out structures (4) is different than a material of the semiconductor layer sequence (2). The refractive indices of the materials of the coupling-out structures (4) and of the semiconductor layer sequence (2) deviate from one another by at most 30%. Furthermore, facets (40) of the coupling-out structures (4) have a total area amounting to at least 30% of an area content of the radiation passage area (20).

摘要翻译： 在光电半导体芯片（1）的至少一个实施例中，后者包括半导体层序列（2），其包括设计用于产生电磁辐射的至少一个有源层（3）。 此外，光电子半导体芯片（1）具有耦合输出结构（4），其至少间接地配合在半导体层序列（2）的辐射通道区域（20）上。 在这种情况下，耦合结构（4）的材料与半导体层序列（2）的材料不同。 耦合出结构（4）和半导体层序列（2）的材料的折射率彼此相差至多30％。 此外，耦合结构（4）的小面（40）具有相当于辐射通过区域（20）的面积含量的至少30％的总面积。

公开(公告)号：US20120146044A1

公开(公告)日：2012-06-14

申请号：US13138034

申请日：2009-11-02

申请人： Nikolaus Gmeinwieser ,  Matthias Sabathil ,  Andreas Leber

发明人： Nikolaus Gmeinwieser ,  Matthias Sabathil ,  Andreas Leber

IPC分类号： H01L33/02 ,  H01L33/58

CPC分类号： H01L33/22

摘要： In at least one embodiment of the optoelectronic semiconductor chip (1), the latter comprises a semiconductor layer sequence (2) comprising at least one active layer (3) designed for generating an electromagnetic radiation. Furthermore, the optoelectronic semiconductor chip (1) has coupling-out structures (4), which are fitted at least indirectly on a radiation passage area (20) of the semiconductor layer sequence (2). In this case, a material of the coupling-out structures (4) is different than a material of the semiconductor layer sequence (2). The refractive indices of the materials of the coupling-out structures (4) and of the semiconductor layer sequence (2) deviate from one another by at most 30%. Furthermore, facets (40) of the coupling-out structures (4) have a total area amounting to at least 30% of an area content of the radiation passage area (20).

摘要翻译： 在光电半导体芯片（1）的至少一个实施例中，后者包括半导体层序列（2），其包括设计用于产生电磁辐射的至少一个有源层（3）。 此外，光电子半导体芯片（1）具有耦合输出结构（4），其至少间接地配合在半导体层序列（2）的辐射通道区域（20）上。 在这种情况下，耦合结构（4）的材料与半导体层序列（2）的材料不同。 耦合出结构（4）和半导体层序列（2）的材料的折射率彼此相差至多30％。 此外，耦合结构（4）的小面（40）具有相当于辐射通过区域（20）的面积含量的至少30％的总面积。