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    OPTOELECTRONIC SEMICONDUCTOR CHIP
    1.
    发明申请
    OPTOELECTRONIC SEMICONDUCTOR CHIP 审中-公开
    光电子半导体芯片

    公开(公告)号：US20120273824A1

    公开(公告)日：2012-11-01

    申请号：US13517110

    申请日：2010-12-15

    申请人： Nikolaus Gmeinwieser ,  Matthias Sabathil ,  Andreas Leber

    发明人： Nikolaus Gmeinwieser ,  Matthias Sabathil ,  Andreas Leber

    IPC分类号： H01L33/58

    CPC分类号： H01L33/42 ,  H01L33/02 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L2224/48091 ,  H01L2924/00014

    摘要： An optoelectronic semiconductor chip includes a semiconductor layer sequence having an active layer and a light-outcoupling layer applied at least indirectly on a radiation permeable surface of the semiconductor layer sequence. A material of the light-outcoupling layer is different from a material of the semiconductor layer sequence and refractive indices of the materials of the light-outcoupling layer and of the semiconductor layer sequence differ from each other by 20% at most. Recesses in the light-outcoupling layer form facets, wherein the recesses do not penetrate the light-outcoupling layer completely. The facets have a total area of at least 25% of an area of the radiation permeable surface.

    摘要翻译： 光电半导体芯片包括半导体层序列，其具有至少间接地施加在半导体层序列的可辐射透过表面上的有源层和发光耦合层。 光输出耦合层的材料与半导体层序列的材料不同，并且光输出耦合层和半导体层序列的材料的折射率最多彼此相差20％。 光输出耦合层中的凹陷形成刻面，其中凹部不完全穿透光输出耦合层。 小面的总面积为辐射透过面积的至少25％。

    Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip
    2.
    发明授权
    Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip 有权
    光电半导体芯片及其制造方法

    公开(公告)号：US08816353B2

    公开(公告)日：2014-08-26

    申请号：US13138034

    申请日：2009-11-02

    申请人： Nikolaus Gmeinwieser ,  Matthias Sabathil ,  Andreas Leber

    发明人： Nikolaus Gmeinwieser ,  Matthias Sabathil ,  Andreas Leber

    IPC分类号： H01L29/15 ,  H01L21/00 ,  H01L33/22

    CPC分类号： H01L33/22

    摘要： In at least one embodiment of the optoelectronic semiconductor chip (1), the latter comprises a semiconductor layer sequence (2) comprising at least one active layer (3) designed for generating an electromagnetic radiation. Furthermore, the optoelectronic semiconductor chip (1) has coupling-out structures (4), which are fitted at least indirectly on a radiation passage area (20) of the semiconductor layer sequence (2). In this case, a material of the coupling-out structures (4) is different than a material of the semiconductor layer sequence (2). The refractive indices of the materials of the coupling-out structures (4) and of the semiconductor layer sequence (2) deviate from one another by at most 30%. Furthermore, facets (40) of the coupling-out structures (4) have a total area amounting to at least 30% of an area content of the radiation passage area (20).

    摘要翻译： 在光电半导体芯片（1）的至少一个实施例中，后者包括半导体层序列（2），其包括设计用于产生电磁辐射的至少一个有源层（3）。 此外，光电子半导体芯片（1）具有耦合输出结构（4），其至少间接地配合在半导体层序列（2）的辐射通道区域（20）上。 在这种情况下，耦合结构（4）的材料与半导体层序列（2）的材料不同。 耦合出结构（4）和半导体层序列（2）的材料的折射率彼此相差至多30％。 此外，耦合结构（4）的小面（40）具有相当于辐射通过区域（20）的面积含量的至少30％的总面积。

    Optoelectronic Semiconductor Chip and Method for Producing an Optoelectronic Semiconductor Chip
    3.
    发明申请
    Optoelectronic Semiconductor Chip and Method for Producing an Optoelectronic Semiconductor Chip 有权
    光电半导体芯片及其制造方法

    公开(公告)号：US20120146044A1

    公开(公告)日：2012-06-14

    申请号：US13138034

    申请日：2009-11-02

    申请人： Nikolaus Gmeinwieser ,  Matthias Sabathil ,  Andreas Leber

    发明人： Nikolaus Gmeinwieser ,  Matthias Sabathil ,  Andreas Leber

    IPC分类号： H01L33/02 ,  H01L33/58

    CPC分类号： H01L33/22

    摘要： In at least one embodiment of the optoelectronic semiconductor chip (1), the latter comprises a semiconductor layer sequence (2) comprising at least one active layer (3) designed for generating an electromagnetic radiation. Furthermore, the optoelectronic semiconductor chip (1) has coupling-out structures (4), which are fitted at least indirectly on a radiation passage area (20) of the semiconductor layer sequence (2). In this case, a material of the coupling-out structures (4) is different than a material of the semiconductor layer sequence (2). The refractive indices of the materials of the coupling-out structures (4) and of the semiconductor layer sequence (2) deviate from one another by at most 30%. Furthermore, facets (40) of the coupling-out structures (4) have a total area amounting to at least 30% of an area content of the radiation passage area (20).

    摘要翻译： 在光电半导体芯片（1）的至少一个实施例中，后者包括半导体层序列（2），其包括设计用于产生电磁辐射的至少一个有源层（3）。 此外，光电子半导体芯片（1）具有耦合输出结构（4），其至少间接地配合在半导体层序列（2）的辐射通道区域（20）上。 在这种情况下，耦合结构（4）的材料与半导体层序列（2）的材料不同。 耦合出结构（4）和半导体层序列（2）的材料的折射率彼此相差至多30％。 此外，耦合结构（4）的小面（40）具有相当于辐射通过区域（20）的面积含量的至少30％的总面积。

    Lighting device
    4.
    发明授权
    Lighting device 有权
    照明设备

    公开(公告)号：US09029878B2

    公开(公告)日：2015-05-12

    申请号：US13522508

    申请日：2011-01-17

    申请人： Matthias Sabathil ,  Norwin von Malm ,  Lutz Hoeppel ,  Stefan Illek ,  Bernd Barchmann ,  Patrick Rode

    发明人： Matthias Sabathil ,  Norwin von Malm ,  Lutz Hoeppel ,  Stefan Illek ,  Bernd Barchmann ,  Patrick Rode

    IPC分类号： H01L33/08 ,  H01L25/075 ,  H01L33/22 ,  H01L33/50 ,  H01L33/58 ,  H01L33/62

    CPC分类号： H01L25/0753 ,  H01L33/22 ,  H01L33/507 ,  H01L33/58 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A lighting device with front carrier, rear carrier and plurality of light-emitting diode chips, which when in operation emits light and releases waste heat, wherein rear carrier is covered at least in selected locations by front carrier, light-emitting diode chips are arranged between rear carrier and front carrier to form array, light-emitting diodes are contacted electrically by rear and/or front carrier and immobilized mechanically by rear carrier and front carrier, front carrier is coupled thermally conductively to light-emitting diode chips and includes light outcoupling face remote from light-emitting diode chips, which light outcoupling face releases some of waste heat released by light-emitting diode chips into surrounding environment, each light-emitting diode chip is actuated with electrical nominal power of 100 mW or less when lighting device is in operation and has light yield of 100 lm/W or more.

    摘要翻译： 一种具有前载体，后载体和多个发光二极管芯片的照明装置，其在运行时发光并释放废热，其中后载体至少在前载体上被选定的位置覆盖，发光二极管芯片布置 在后载体和前载体之间形成阵列，发光二极管由后和/或前载体电接触并由后载体和前载体机械固定，前载体热传导耦合到发光二极管芯片，并且包括光输出耦合 面对远离发光二极管芯片的光输出耦合面将发光二极管芯片释放的一部分废热释放到周围环境中，当发光二极管芯片的照明装置为100mW或更小时，每个发光二极管芯片的功率为100mW 具有100 lm / W以上的光收率。

    Optical projection apparatus
    5.
    发明授权
    Optical projection apparatus 有权
    光投影装置

    公开(公告)号：US08684540B2

    公开(公告)日：2014-04-01

    申请号：US13378308

    申请日：2010-06-15

    申请人： Stefan Grötsch ,  Simon Kocur ,  Matthias Sabathil

    发明人： Stefan Grötsch ,  Simon Kocur ,  Matthias Sabathil

    IPC分类号： G03B21/20 ,  G03B21/26 ,  F21V9/00 ,  F21V9/16 ,  F21V23/02

    CPC分类号： H04N9/3111 ,  G03B21/2013 ,  G03B21/204 ,  G03B33/08 ,  H01L25/0756 ,  H01L27/15 ,  H01L33/22 ,  H01L33/382 ,  H01L2924/0002 ,  H04N9/3164 ,  H01L2924/00

    摘要： An optical projection apparatus includes a first light source, a second light source, and an imaging element, which is illuminated by the first light source and the second light source during operation. The light source includes a light-emitting diode chip that emits red light during operation. The second light source includes a first light-emitting diode chip, which emits green light during operation. A second light-emitting diode chip emits blue light during operation. The second light-emitting diode chip is arranged on the first light-emitting diode chip at a radiation exit surface of the first light-emitting diode chip. Electromagnetic radiation generated in the first light-emitting diode chip during operation passes through the second light-emitting diode chip.

    摘要翻译： 光学投影设备包括第一光源，第二光源和成像元件，其在操作期间由第一光源和第二光源照射。 光源包括在操作期间发出红光的发光二极管芯片。 第二光源包括在操作期间发出绿光的第一发光二极管芯片。 第二个发光二极管芯片在运行期间发出蓝光。 第二发光二极管芯片被布置在第一发光二极管芯片的第一发光二极管芯片的辐射出射表面处。 在操作中在第一发光二极管芯片中产生的电磁辐射通过第二发光二极管芯片。

    Luminescence diode chip
    7.
    发明授权
    Luminescence diode chip 有权
    发光二极管芯片

    公开(公告)号：US08436394B2

    公开(公告)日：2013-05-07

    申请号：US13124145

    申请日：2009-10-16

    申请人： Peter Brick ,  Matthias Sabathil ,  Hagen Luckner

    发明人： Peter Brick ,  Matthias Sabathil ,  Hagen Luckner

    IPC分类号： H01L33/62

    CPC分类号： H01L33/387 ,  F21S41/155 ,  H01L33/20 ,  H01L33/22 ,  H01L33/486 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A luminescence diode chip includes a semiconductor layer sequence having an active layer suitable for generating electromagnetic radiation, and a first electrical connection layer, which touches and makes electrically conductive contact with the semiconductor layer sequence. The first electrical connection layer touches and makes contact with the semiconductor layer sequence in particular with a plurality of contact areas. In the case of the luminescence diode chip, an inhomogeneous current density distribution or current distribution is set in a targeted manner in the semiconductor layer sequence by means of an inhomogeneous distribution of an area density of the contact areas along a main plane of extent of the semiconductor layer sequence.

    摘要翻译： 发光二极管芯片包括具有适于产生电磁辐射的有源层的半导体层序列以及接触并与半导体层序列导电接触的第一电连接层。 第一电连接层特别地与多个接触区域接触并与半导体层序列接触。 在发光二极管芯片的情况下，通过沿着主要平面的接触区域的面积密度的不均匀分布，在半导体层序列中以目标方式设定不均匀的电流密度分布或电流分布 半导体层序列。