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9 条记录 (耗时 0.023 秒)

    Characterizing flare of a projection lens
    1.
    发明授权
    Characterizing flare of a projection lens 有权
    表征投影镜头的耀斑

    公开(公告)号：US07189481B2

    公开(公告)日：2007-03-13

    申请号：US10933090

    申请日：2004-09-01

    申请人： Bo Wu ,  Abdurrahman Sezginer ,  Franz X. Zach

    发明人： Bo Wu ,  Abdurrahman Sezginer ,  Franz X. Zach

    IPC分类号： G03F9/00

    CPC分类号： G03F7/70941 ,  G03F1/44 ,  G03F7/70591

    摘要： Flare of an imaging system is measured using resist by employing the imaging system to directly expose a first part of the resist at an image plane of the imaging system to a first dose of radiation and to indirectly expose a second part of the resist as a result of flare. The imaging system exposes the second part of the resist to a second dose of radiation. Flare of the imaging system is determined from a pattern that is formed in the second part of the resist.

    摘要翻译： 使用抗蚀剂通过使用成像系统将成像系统的图像平面处的抗蚀剂的第一部分直接暴露于第一剂量的辐射并且间接暴露抗蚀剂的第二部分来测量成像系统的耀斑，结果 的耀斑。 成像系统将抗蚀剂的第二部分暴露于第二剂量的辐射。 从形成在抗蚀剂的第二部分的图案确定成像系统的光斑。

    Method for correcting position-dependent distortions in patterning of integrated circuits
    2.
    发明授权
    Method for correcting position-dependent distortions in patterning of integrated circuits 有权
    用于校正集成电路图案化中的位置相关失真的方法

    公开(公告)号：US07246343B2

    公开(公告)日：2007-07-17

    申请号：US10933192

    申请日：2004-09-01

    申请人： Devendra Joshi ,  Abdurrahman Sezginer ,  Franz X. Zach

    发明人： Devendra Joshi ,  Abdurrahman Sezginer ,  Franz X. Zach

    IPC分类号： G06F17/50

    CPC分类号： G03F1/36

    摘要： A method and system for reducing the computation time required to apply position-dependent corrections to lithography, usually mask, data is disclosed. Optical proximity or process corrections are determined for a few instances of a repeating cluster or object, usually at widely separated locations and then interpolating the corrections to the other instances of the repeating cluster based on their positions in the exposure field. Or, optical proximity corrections can be applied to the repeating cluster of objects for different values of flare intensity, or another parameter of patterning imperfection, such as by calculating the value of the flare at the location of each instance of the repeating cluster, and interpolating the optical proximity corrections to those values of flare.

    摘要翻译： 公开了一种用于减少对光刻应用位置相关校正所需的计算时间的方法和系统，通常是屏蔽数据。 通常在广泛分离的位置处对重复的簇或对象的几个实例确定光学邻近度或过程校正，然后基于它们在曝光区域中的位置将校正内插到重复簇的其他实例。 或者，可以将光学邻近校正应用于不同的闪光强度值的对象的重复簇或者图案化缺陷的另一参数，例如通过计算重复簇的每个实例的位置处的闪光的值，以及内插 光学接近度校正到这些闪光值。

    Method of compensating photomask data for the effects of etch and lithography processes
    3.
    发明授权
    Method of compensating photomask data for the effects of etch and lithography processes 有权
    补偿光掩模数据的方法，用于蚀刻和光刻工艺的影响

    公开(公告)号：US07600212B2

    公开(公告)日：2009-10-06

    申请号：US11541921

    申请日：2006-10-02

    申请人： Franz X. Zach ,  Jesus Carrero ,  Bayram Yenikaya ,  Gokhan Percin ,  Xuelong Cao ,  Abdurrahman Sezginer

    发明人： Franz X. Zach ,  Jesus Carrero ,  Bayram Yenikaya ,  Gokhan Percin ,  Xuelong Cao ,  Abdurrahman Sezginer

    IPC分类号： G06F17/50

    CPC分类号： G03F1/36

    摘要： A method for synthesizing a photomask data set from a given target layout, including the following steps: (a) providing a set of target polygons for the target layout; (b) fitting a smooth curve to a target polygon of the set of target polygons, the curve having a set of etch-target points; (c) moving the etch target points according to a model of an etch process to produce a set of lithography-target points; and (d) synthesizing a photomask data set based on a model of a lithography process and the set of lithography-target points.

    摘要翻译： 一种用于从给定目标布局合成光掩模数据集的方法，包括以下步骤：（a）为目标布局提供一组目标多边形; （b）将平滑曲线拟合到所述目标多边形集合的目标多边形，所述曲线具有一组蚀刻目标点; （c）根据蚀刻工艺的模型移动蚀刻目标点以产生一组光刻目标点; 以及（d）基于光刻工艺的模型和所述一组光刻目标点合成光掩模数据集。

    Method and system for reducing the impact of across-wafer variations on critical dimension measurements
    4.
    发明授权
    Method and system for reducing the impact of across-wafer variations on critical dimension measurements 有权
    减少跨晶圆变化对临界尺寸测量的影响的方法和系统

    公开(公告)号：US07588868B2

    公开(公告)日：2009-09-15

    申请号：US10971350

    申请日：2004-10-22

    申请人： Franz X. Zach ,  Abdurrahman Sezginer ,  Gokhan Percin

    发明人： Franz X. Zach ,  Abdurrahman Sezginer ,  Gokhan Percin

    IPC分类号： G03F9/00 ,  G03C5/00

    CPC分类号： G03B27/72 ,  G03F7/70441 ,  G03F7/70558 ,  G03F7/70625 ,  G03F7/70641

    摘要： First and second exposures of a mask onto a wafer are performed such that the exposure field of the second exposure partially overlaps the exposure field of the first exposure. A characteristic of a set of features is determined, and a value of a parameter of an optical proximity correction model is determined. An alignment feature can be used to align a measurement tool. In yet another embodiment, pupil intensity distribution of an imaging system is measured by exposing an image field of a radiation detector with a bright feature, positioning the detector at a distance away from the image plane, and exposing the image field of the detector with a bright feature, resulting in a cumulative exposure of the image field of the detector from the two exposures. A characteristic of a spatial pattern in the cumulative exposure of the image field of the detector is then determined.

    摘要翻译： 进行掩模在晶片上的第一曝光和第二曝光，使得第二曝光的曝光场部分地与第一曝光的曝光场重叠。 确定一组特征的特征，并且确定光学邻近校正模型的参数的值。 对齐功能可用于对齐测量工具。 在另一个实施例中，成像系统的光瞳强度分布是通过用明亮特征曝光放射线检测器的图像场，将检测器定位在距离图像平面一定距离处，并且将检测器的图像场用 明亮的特征，导致来自两次曝光的检测器的图像场的累积曝光。 然后确定检测器的图像场的累积曝光中的空间图案的特性。

    Method to self-align a lithographic pattern to a workpiece
    6.
    发明授权
    Method to self-align a lithographic pattern to a workpiece 失效
    将光刻图案对准工件的方法

    公开(公告)号：US06485894B1

    公开(公告)日：2002-11-26

    申请号：US09675250

    申请日：2000-09-29

    申请人： Hiroyuki Akatsu ,  Franz X. Zach

    发明人： Hiroyuki Akatsu ,  Franz X. Zach

    IPC分类号： G03C556

    CPC分类号： G03F7/0035 ,  G03F7/2002

    摘要： A method to self-align a lithographic pattern to a workpiece, the method including the steps of obtaining a workpiece having a predetermined pattern of features; modifying at least some of the features so that when a photoresist material is applied to the pattern, there is a substantial difference in reflectivity between two adjacent features, at least one of which has been modified; applying a photoresist material; masklessly exposing the photoresist material; developing the photoresist material, the substantial difference in reflectivity of the two adjacent features causing the developed photoresist material to reveal one adjacent feature but not the other.

    摘要翻译： 一种将平版印刷图案自对准到工件的方法，该方法包括以下步骤：获得具有预定特征图案的工件; 修改至少一些特征，使得当将光致抗蚀剂材料施加到图案时，两个相邻特征之间的反射率存在显着差异，其中至少一个已被修改; 施加光致抗蚀剂材料; 无光泽地曝光光致抗蚀剂材料; 显影光致抗蚀剂材料，两个相邻特征的反射率的显着差异导致显影的光致抗蚀剂材料显露出一个相邻特征而不是另一个特征。

    Alternating phase-shift mask rule compliant IC design
    7.
    发明授权
    Alternating phase-shift mask rule compliant IC design 有权
    交替移相掩模规则兼容IC设计

    公开(公告)号：US07124396B2

    公开(公告)日：2006-10-17

    申请号：US10708684

    申请日：2004-03-18

    申请人： Franz X. Zach

    发明人： Franz X. Zach

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5068 ,  G03F1/30

    摘要： A system, method and program product that implement a design object that automatically provides compliance to alternating phase shifted mask (altPSM) rules are disclosed. The invention implements a design object that is used during layout to indicate a phase-shiftable design feature in the layout. Each design object includes a base shape indicative of the feature to be ultimately created and two different type phase shape identifiers that identify the requisite mask area and color of phase-shift required for that base shape. Each phase shape identifier is assigned to a portion of the base shape. During layout, overlapping placement of design objects is not allowed if the placement requires overlapping phase identifiers of the same type. Alternatively, placement is allowed where the phase identifiers of different type are separated by a minimum distance from each other defined by a buffer of the design object.

    摘要翻译： 公开了实现自动提供对交替相移掩码（altPSM）规则的符合性的设计对象的系统，方法和程序产品。 本发明实现了在布局期间用于指示布局中的可相移设计特征的设计对象。 每个设计对象包括指示要最终创建的特征的基本形状和两个不同类型的相位形状标识符，其识别该基本形状所需的相移掩模区域和相移的颜色。 每个相位形状标识符被分配给基本形状的一部分。 在布局期间，如果放置需要相同类型的重叠相位标识符，则不允许重叠放置设计对象。 或者，允许放置，其中不同类型的相位标识符被设计对象的缓冲器定义的彼此之间的最小距离隔开。

    Method for producing constant profile sidewalls
    8.
    发明授权
    Method for producing constant profile sidewalls 失效
    制造恒定型材侧壁的方法

    公开(公告)号：US6132940A

    公开(公告)日：2000-10-17

    申请号：US213028

    申请日：1998-12-16

    申请人： Rebecca D. Mih ,  Franz X. Zach

    发明人： Rebecca D. Mih ,  Franz X. Zach

    IPC分类号： G03F7/00 ,  G03F7/20

    CPC分类号： G03F7/2024 ,  G03F7/00 ,  G03F7/2022

    摘要： A method of making at least one feature on an object having an upper surface, comprising the steps of:1. applying a layer of a photoresist having an initial thickness to the upper surface;2. exposing the layer of photoresist to a first dosage of light having a first intensity for a first predetermined period of time, such that at least a portion of the upper surface has a thickness that is at most equal to the initial thickness; and3. exposing the layer of photoresist to a second dosage of light having a second intensity for a second predetermined period of time, such that at least a subset of the portion of the upper surface exposed by the first dosage of light is exposed by the second dosage of light.

    摘要翻译： 一种在具有上表面的物体上制造至少一个特征的方法，包括以下步骤：1.将具有初始厚度的光致抗蚀剂层施加到上表面; 2.将光致抗蚀剂层暴露于具有第一强度的第一剂量的光，持续第一预定时间段，使得上表面的至少一部分具有最大等于初始厚度的厚度; 以及3.将所述光致抗蚀剂层暴露于具有第二强度的第二剂量的光，持续第二预定时间段，使得由所述第一剂量的光暴露的所述上表面部分的至少一部分被所述第 第二剂量的光。