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    Technique for monitoring and controlling a plasma process
    1.
    发明授权
    Technique for monitoring and controlling a plasma process 失效
    监测和控制等离子体工艺的技术

    公开(公告)号：US07476849B2

    公开(公告)日：2009-01-13

    申请号：US11371907

    申请日：2006-03-10

    申请人： Bon-Woong Koo ,  Ludovic Godet ,  Vassilis Panayotis Vourloumis ,  Vikram Singh ,  Ziwei Fang

    发明人： Bon-Woong Koo ,  Ludovic Godet ,  Vassilis Panayotis Vourloumis ,  Vikram Singh ,  Ziwei Fang

    IPC分类号： H01J49/40 ,  G01N27/26 ,  G01N33/00

    CPC分类号： H01J49/40 ,  H01J37/32935

    摘要： An in-situ ion sensor is disclosed for monitoring ion species in a plasma chamber. The ion sensor may comprise: a drift tube; an extractor electrode and a plurality of electrostatic lenses disposed at a first end of the drift tube, wherein the extractor electrode is biased to attract ions from a plasma in the plasma chamber, and wherein the plurality of electrostatic lenses cause at least one portion of the attracted ions to enter the drift tube and drift towards a second end of the drift tube within a limited divergence angle; an ion detector disposed at the second end of the drift tube, wherein the ion detector detects arrival times associated with the at least one portion of the attracted ions; and a housing for the extractor, the plurality of electrostatic lenses, the drift tube, and the ion detector, wherein the housing accommodates differential pumping between the ion sensor and the plasma chamber.

    摘要翻译： 公开了用于监测等离子体室中的离子种类的原位离子传感器。 离子传感器可以包括：漂移管; 提取器电极和设置在漂移管的第一端处的多个静电透镜，其中所述提取器电极被偏置以从所述等离子体室中的等离子体吸引离子，并且其中所述多个静电透镜引起所述静电透镜的至少一部分 吸引离子进入漂移管并在有限的发散角内漂移到漂移管的第二端; 设置在所述漂移管的第二端处的离子检测器，其中所述离子检测器检测与所述吸引离子的所述至少一部分相关联的到达时间; 以及用于提取器，多个静电透镜，漂移管和离子检测器的壳体，其中壳体容纳离子传感器和等离子体室之间的差分泵浦。

    Technique for Monitoring and Controlling A PLasma Process
    2.
    发明申请
    Technique for Monitoring and Controlling A PLasma Process 审中-公开
    监测和控制PLasma过程的技术

    公开(公告)号：US20090283670A1

    公开(公告)日：2009-11-19

    申请号：US12272537

    申请日：2008-11-18

    申请人： Bon-Woong Koo ,  Ludovic Godet ,  Vassilis Panayotis Vourloumis ,  Vikram Singh ,  Ziwei Fang

    发明人： Bon-Woong Koo ,  Ludovic Godet ,  Vassilis Panayotis Vourloumis ,  Vikram Singh ,  Ziwei Fang

    IPC分类号： B01D59/44 ,  H01J49/00

    CPC分类号： H01J37/32422 ,  H01J37/32935

    摘要： A time-of-flight ion sensor for monitoring ion species in a plasma includes a housing. A drift tube is positioned in the housing. An extractor electrode is positioned in the housing at a first end of the drift tube so as to attract ions from the plasma. A plurality of electrodes is positioned at a first end of the drift tube proximate to the extractor electrode. The plurality of electrodes is biased so as to selectively attract ions to enter the drift tube and to drift towards a second end of the drift tube. An ion detector is positioned proximate to the second end of the drift tube. The ion detector detects arrival times associated with the at least the portion of the attracted ions.

    摘要翻译： 用于监测等离子体中的离子种类的飞行时间离子传感器包括壳体。 漂移管位于外壳中。 提取器电极位于漂移管的第一端处的壳体中，以便从等离子体吸引离子。 多个电极位于漂移管的靠近提取器电极的第一端。 多个电极被偏置以选择性地吸引离子进入漂移管并漂移到漂移管的第二端。 离子检测器位于漂移管的第二端附近。 离子检测器检测与吸引的离子的至少一部分相关联的到达时间。

    Technique for monitoring and controlling a plasma process
    3.
    发明授权
    Technique for monitoring and controlling a plasma process 失效
    监测和控制等离子体工艺的技术

    公开(公告)号：US07453059B2

    公开(公告)日：2008-11-18

    申请号：US11678524

    申请日：2007-02-23

    申请人： Bon-Woong Koo ,  Ziwei Fang ,  Ludovic Godet ,  Vikram Singh ,  Vassilis Panayotis Vourloumis ,  Bernard G. Lindsay

    发明人： Bon-Woong Koo ,  Ziwei Fang ,  Ludovic Godet ,  Vikram Singh ,  Vassilis Panayotis Vourloumis ,  Bernard G. Lindsay

    IPC分类号： G01N27/26 ,  G01N33/00 ,  H01J49/40

    CPC分类号： H01J37/32422 ,  H01J37/32935

    摘要： A time-of-flight ion sensor for monitoring ion species in a plasma includes a housing. A drift tube is positioned in the housing. An extractor electrode is positioned in the housing at a first end of the drift tube so as to attract ions from the plasma. A plurality of electrodes is positioned at a first end of the drift tube proximate to the extractor electrode. The plurality of electrodes is biased so as to cause at least a portion of the attracted ions to enter the drift tube and to drift towards a second end of the drift tube. An ion detector is positioned proximate to the second end of the drift tube. The ion detector detects arrival times associated with the at least the portion of the attracted ions.

    摘要翻译： 用于监测等离子体中的离子种类的飞行时间离子传感器包括壳体。 漂移管位于外壳中。 提取器电极位于漂移管的第一端处的壳体中，以便从等离子体吸引离子。 多个电极位于漂移管的靠近提取器电极的第一端。 多个电极被偏置，以使至少一部分吸引的离子进入漂移管并漂移到漂移管的第二端。 离子检测器位于漂移管的第二端附近。 离子检测器检测与吸引的离子的至少一部分相关联的到达时间。

    Technique for Monitoring and Controlling a Plasma Process
    4.
    发明申请
    Technique for Monitoring and Controlling a Plasma Process 失效
    监测和控制等离子体工艺技术

    公开(公告)号：US20070227231A1

    公开(公告)日：2007-10-04

    申请号：US11678524

    申请日：2007-02-23

    申请人： Bon-Woong Koo ,  Ziwei Fang ,  Ludovic Godet ,  Vikram Singh ,  Vassilis Vourloumis ,  Bernard Lindsay

    发明人： Bon-Woong Koo ,  Ziwei Fang ,  Ludovic Godet ,  Vikram Singh ,  Vassilis Vourloumis ,  Bernard Lindsay

    IPC分类号： G01N27/26 ,  G01N33/00

    CPC分类号： H01J37/32422 ,  H01J37/32935

    摘要： A time-of-flight ion sensor for monitoring ion species in a plasma includes a housing. A drift tube is positioned in the housing. An extractor electrode is positioned in the housing at a first end of the drift tube so as to attract ions from the plasma. A plurality of electrodes is positioned at a first end of the drift tube proximate to the extractor electrode. The plurality of electrodes is biased so as to cause at least a portion of the attracted ions to enter the drift tube and to drift towards a second end of the drift tube. An ion detector is positioned proximate to the second end of the drift tube. The ion detector detects arrival times associated with the at least the portion of the attracted ions.

    摘要翻译： 用于监测等离子体中的离子种类的飞行时间离子传感器包括壳体。 漂移管位于外壳中。 提取器电极位于漂移管的第一端处的壳体中，以便从等离子体吸引离子。 多个电极位于漂移管的靠近提取器电极的第一端。 多个电极被偏置，以使至少一部分吸引的离子进入漂移管并漂移到漂移管的第二端。 离子检测器位于漂移管的第二端附近。 离子检测器检测与吸引的离子的至少一部分相关联的到达时间。

    Technique for monitoring and controlling a plasma process
    5.
    发明申请
    Technique for monitoring and controlling a plasma process 失效
    监测和控制等离子体工艺的技术

    公开(公告)号：US20070210248A1

    公开(公告)日：2007-09-13

    申请号：US11371907

    申请日：2006-03-10

    申请人： Bon-Woong Koo ,  Ludovic Godet ,  Vassilis Vourloumis ,  Vikram Singh ,  Ziwei Fang

    发明人： Bon-Woong Koo ,  Ludovic Godet ,  Vassilis Vourloumis ,  Vikram Singh ,  Ziwei Fang

    IPC分类号： H01J49/40

    CPC分类号： H01J49/40 ,  H01J37/32935

    摘要： An in-situ ion sensor is disclosed for monitoring ion species in a plasma chamber. The ion sensor may comprise: a drift tube; an extractor electrode and a plurality of electrostatic lenses disposed at a first end of the drift tube, wherein the extractor electrode is biased to attract ions from a plasma in the plasma chamber, and wherein the plurality of electrostatic lenses cause at least one portion of the attracted ions to enter the drift tube and drift towards a second end of the drift tube within a limited divergence angle; an ion detector disposed at the second end of the drift tube, wherein the ion detector detects arrival times associated with the at least one portion of the attracted ions; and a housing for the extractor, the plurality of electrostatic lenses, the drift tube, and the ion detector, wherein the housing accommodates differential pumping between the ion sensor and the plasma chamber.

    摘要翻译： 公开了用于监测等离子体室中的离子种类的原位离子传感器。 离子传感器可以包括：漂移管; 提取器电极和设置在漂移管的第一端处的多个静电透镜，其中所述提取器电极被偏置以从所述等离子体室中的等离子体吸引离子，并且其中所述多个静电透镜引起所述静电透镜的至少一部分 吸引离子进入漂移管并在有限的发散角内漂移到漂移管的第二端; 设置在所述漂移管的第二端处的离子检测器，其中所述离子检测器检测与所述吸引离子的所述至少一部分相关联的到达时间; 以及用于提取器，多个静电透镜，漂移管和离子检测器的壳体，其中壳体容纳离子传感器和等离子体室之间的差分泵浦。

    Monitoring plasma ion implantation systems for fault detection and process control
    6.
    发明申请
    Monitoring plasma ion implantation systems for fault detection and process control 失效
    监测等离子体离子注入系统进行故障检测和过程控制

    公开(公告)号：US20080026133A1

    公开(公告)日：2008-01-31

    申请号：US10858582

    申请日：2004-06-02

    申请人： Ziwei Fang ,  Sung-Cheon Ko ,  Edmund J. Winder ,  Daniel Distaso ,  Ludovic Godet ,  Bon Woong Koo ,  Jay T. Scheuer

    发明人： Ziwei Fang ,  Sung-Cheon Ko ,  Edmund J. Winder ,  Daniel Distaso ,  Ludovic Godet ,  Bon Woong Koo ,  Jay T. Scheuer

    IPC分类号： C23C16/52 ,  B05C11/00

    CPC分类号： H01J37/32412

    摘要： A plasma ion implantation system includes a process chamber, a source for producing a plasma in the process chamber, a platen for holding a substrate in the process chamber and a pulse source for generating implant pulses for accelerating ions from the plasma into the substrate. In one aspect, the system includes a plasma monitor configured to measure ion mass and energy in the process chamber and an analyzer configured to determine an operating condition of the system in response to the measured mass and energy. In another aspect, the system includes a data acquisition unit configured to acquire samples of the implant pulses and analyzer configured to determine an operating condition of the system based on the acquired samples.

    摘要翻译： 等离子体离子注入系统包括处理室，用于在处理室中产生等离子体的源，用于在处理室中保持衬底的压板和用于产生用于将等离子体离子加速到衬底中的用于产生注入脉冲的脉冲源。 在一个方面，该系统包括配置成测量处理室中的离子质量和能量的等离子体监测器，以及配置成响应于测量的质量和能量来确定系统的操作状态的分析器。 在另一方面，该系统包括：数据获取单元，被配置为获取植入脉冲的样本和被配置为基于获取的样本来确定系统的操作条件的分析器。

    Monitoring plasma ion implantation systems for fault detection and process control
    7.
    发明授权
    Monitoring plasma ion implantation systems for fault detection and process control 失效
    监测等离子体离子注入系统进行故障检测和过程控制

    公开(公告)号：US07878145B2

    公开(公告)日：2011-02-01

    申请号：US10858582

    申请日：2004-06-02

    申请人： Ziwei Fang ,  Sung-Cheon Ko ,  Edmund J. Winder ,  Daniel Distaso ,  Ludovic Godet ,  Bon Woong Koo ,  Jay T. Scheuer

    发明人： Ziwei Fang ,  Sung-Cheon Ko ,  Edmund J. Winder ,  Daniel Distaso ,  Ludovic Godet ,  Bon Woong Koo ,  Jay T. Scheuer

    IPC分类号： C23C16/00

    CPC分类号： H01J37/32412

    摘要： A plasma ion implantation system includes a process chamber, a source for producing a plasma in the process chamber, a platen for holding a substrate in the process chamber and a pulse source for generating implant pulses for accelerating ions from the plasma into the substrate. In one aspect, the system includes a plasma monitor configured to measure ion mass and energy in the process chamber and an analyzer configured to determine an operating condition of the system in response to the measured mass and energy. In another aspect, the system includes a data acquisition unit configured to acquire samples of the implant pulses and analyzer configured to determine an operating condition of the system based on the acquired samples.

    摘要翻译： 等离子体离子注入系统包括处理室，用于在处理室中产生等离子体的源，用于在处理室中保持衬底的压板和用于产生用于将等离子体离子加速到衬底中的用于产生注入脉冲的脉冲源。 在一个方面，该系统包括配置成测量处理室中的离子质量和能量的等离子体监测器，以及配置成响应于测量的质量和能量来确定系统的操作状态的分析器。 在另一方面，该系统包括：数据获取单元，被配置为获取植入脉冲的样本和被配置为基于获取的样本来确定系统的操作条件的分析器。

    Plasma Doping System With Charge Control
    10.
    发明申请
    Plasma Doping System With Charge Control 审中-公开
    带充电控制的等离子体掺杂系统

    公开(公告)号：US20090104761A1

    公开(公告)日：2009-04-23

    申请号：US11875062

    申请日：2007-10-19

    申请人： Yongbae Jeon ,  Vikram Singh ,  Timothy Miller ,  Ziwei Fang ,  Steven Walther ,  Atul Gupta

    发明人： Yongbae Jeon ,  Vikram Singh ,  Timothy Miller ,  Ziwei Fang ,  Steven Walther ,  Atul Gupta

    IPC分类号： H01L21/26 ,  C23C16/513

    CPC分类号： H01J37/32642 ,  H01J37/32412 ,  H01J37/32935

    摘要： A method of plasma doping includes generating a plasma comprising dopant ions proximate to a platen supporting a substrate in a plasma chamber. The platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. At least one sensor measuring data related to charging conditions favorable for forming an electrical discharge is monitored. At least one plasma process parameter is modified in response to the measured data, thereby reducing a probability of forming an electrical discharge.

    摘要翻译： 等离子体掺杂的方法包括产生等离子体，该等离子体包括邻近于在等离子体室中支撑衬底的压板的掺杂剂离子。 压板被具有负电位的偏压电压波形偏置，其将等离子体中的离子吸引到用于等离子体掺杂的衬底。 监测至少一个测量与有利于形成放电的充电条件有关的数据的传感器。 响应于测量数据修改至少一个等离子体处理参数，从而降低形成放电的可能性。