公开(公告)号：US20090215156A1

公开(公告)日：2009-08-27

申请号：US11887978

申请日：2006-09-05

申请人： Bong hyun Chung ,  Sang kyu Kim ,  Hye Jung Park

发明人： Bong hyun Chung ,  Sang kyu Kim ,  Hye Jung Park

IPC分类号： C12M1/34 ,  H01L21/3065 ,  C23F1/00 ,  H01L29/02 ,  H01L21/283 ,  H01L29/66 ,  B01J19/00 ,  G01N27/26 ,  G01N27/327 ,  C23F1/32 ,  C23F1/34 ,  C23F1/36 ,  C23F1/40 ,  G03F7/20 ,  G01R29/00

CPC分类号： G01N33/5438 ,  B82Y15/00 ,  C30B29/06 ,  C30B33/10

摘要： The present invention relates to a method of fabricating a nanogap and a nanogap sensor, and to a nanogap and a nanogap sensor fabricated using the method. The present invention relates to a method of fabricating a nanogap and a nanogap sensor, which can be realized by an anisotropic etching using a semiconductor manufacturing process. According to the method of present invention, the nanogap and nanogap sensor can be simply and cheaply produced in large quantities.

摘要翻译： 本发明涉及制造纳米隙和纳米隙传感器的方法，以及使用该方法制造的纳米隙和纳米隙传感器。 本发明涉及一种可以通过使用半导体制造工艺的各向异性蚀刻来实现的纳米隙和纳米隙传感器的制造方法。 根据本发明的方法，可以大量地简单且廉价地生产纳米隙和纳米隙传感器。

公开(公告)号：US20090142840A1

公开(公告)日：2009-06-04

申请号：US12222338

申请日：2008-08-07

申请人： Tai Hyun Park ,  Eun Jeong Kim ,  Hye Jung Park

发明人： Tai Hyun Park ,  Eun Jeong Kim ,  Hye Jung Park

IPC分类号： C12N15/09 ,  C07K14/00

CPC分类号： C07K14/43586

摘要： The present invention relates to DNAs encoding anti-apoptotic 30K proteins. More particularly, the present invention is directed to 30K protein genes and a recombinant proteins prepared by using novel anti-apoptotic gene obtained from silkworm. The present invention also provides anti-apoptotic health care food, pharmaceutical preparation, additive for cell culture medium, and food supplement.

摘要翻译： 本发明涉及编码抗凋亡30K蛋白的DNA。 更具体地，本发明涉及30K蛋白质基因和通过使用从蚕获得的新型抗凋亡基因制备的重组蛋白质。 本发明还提供抗凋亡保健食品，药物制剂，细胞培养基添加剂和食品补充剂。

公开(公告)号：US20110039412A1

公开(公告)日：2011-02-17

申请号：US12643645

申请日：2009-12-21

申请人： Jong Dai Park ,  Jin Hyuk Lim ,  Jung Min Choi ,  Hyun Goo Kong ,  Jae Hyun Kim ,  Hye Jung Park

发明人： Jong Dai Park ,  Jin Hyuk Lim ,  Jung Min Choi ,  Hyun Goo Kong ,  Jae Hyun Kim ,  Hye Jung Park

IPC分类号： B24B1/00 ,  C09K13/00

CPC分类号： H01L21/3212 ,  C09G1/02

摘要： Disclosed herein are a chemical mechanical polishing slurry composition for chemical mechanical planarization of metal layers, which comprises a non-ionized, heat-activated nano-catalyst, and a polishing method using the same. The polishing slurry composition comprises: a non-ionized, heat-activated nano-catalyst which releases electrons and holes by energy generated in a chemical mechanical polishing process; an abrasive; and an oxidizing agent. The non-ionized, heat-activated nano-catalyst and the abrasive are different from each other, and the non-ionized, heat-activated nano-catalyst is preferably a semiconductor material which releases electrons and holes at a temperature of 10 to 100° C. in an aqueous solution state, more preferably a transition metal silicide selected from the group consisting of CrSi, MnSi, CoSi, ferrosilicon (FeSi), mixtures thereof, and most preferably, a semiconductor material such as nano ferrosilicon. The content of the content of the non-ionized, heat-activated nano-catalyst is 0.00001 to 0.1 wt % based on the total weight of the slurry composition.

摘要翻译： 本文公开了一种用于金属层的化学机械平面化的化学机械抛光浆料组合物，其包含非离子化的热活化纳米催化剂和使用其的抛光方法。 抛光浆料组合物包括：通过在化学机械抛光工艺中产生的能量释放电子和空穴的非电离的热活化纳米催化剂; 研磨剂 和氧化剂。 非离子化的热活化纳米催化剂和研磨剂彼此不同，非离子化的热活化纳米催化剂优选为在10〜100℃的温度下释放电子和空穴的半导体材料 更优选选自CrSi，MnSi，CoSi，硅铁（FeSi），其混合物，最优选半导体材料如纳米硅铁的过渡金属硅化物。 非离子化的热活化纳米催化剂的含量相对于浆料组合物的总重量为0.00001〜0.1重量％。

公开(公告)号：US07887715B1

公开(公告)日：2011-02-15

申请号：US12643645

申请日：2009-12-21

申请人： Jong Dai Park ,  Jin Hyuk Lim ,  Jung Min Choi ,  Hyun Goo Kong ,  Jae Hyun Kim ,  Hye Jung Park

发明人： Jong Dai Park ,  Jin Hyuk Lim ,  Jung Min Choi ,  Hyun Goo Kong ,  Jae Hyun Kim ,  Hye Jung Park

IPC分类号： C09K13/04

CPC分类号： H01L21/3212 ,  C09G1/02

摘要： Disclosed herein are a chemical mechanical polishing slurry composition for chemical mechanical planarization of metal layers, which comprises a non-ionized, heat-activated nano-catalyst, and a polishing method using the same. The polishing slurry composition comprises: a non-ionized, heat-activated nano-catalyst which releases electrons and holes by energy generated in a chemical mechanical polishing process; an abrasive; and an oxidizing agent. The non-ionized heat-activated nano-catalyst and the abrasive are different from each other, and the non-ionized, heat-activated nano-catalyst is preferably a semiconductor material which releases electrons and holes at a temperature of 10 to 100° C. in an aqueous solution state, more preferably a transition metal silicide selected from the group consisting of CrSi, MnSi, CoSi, ferrosilicon (FeSi), mixtures thereof, and most preferably, a semiconductor material such as nano ferrosilicon. The content of the content of the non-ionized, heat-activated nano-catalyst is 0.00001 to 0.1 wt % based on the total weight of the slurry composition.

摘要翻译： 本文公开了一种用于金属层的化学机械平面化的化学机械抛光浆料组合物，其包含非离子化的热活化纳米催化剂和使用其的抛光方法。 抛光浆料组合物包括：通过在化学机械抛光工艺中产生的能量释放电子和空穴的非电离的热活化纳米催化剂; 研磨剂 和氧化剂。 非电离热活化纳米催化剂和研磨剂彼此不同，非离子化的热活化纳米催化剂优选为在10〜100℃的温度下释放电子和空穴的半导体材料 在水溶液状态下，更优选选自CrSi，MnSi，CoSi，硅铁（FeSi），其混合物，最优选半导体材料如纳米硅铁的过渡金属硅化物。 非离子化的热活化纳米催化剂的含量相对于浆料组合物的总重量为0.00001〜0.1重量％。