公开(公告)号：US20130270589A1

公开(公告)日：2013-10-17

申请号：US13446876

申请日：2012-04-13

申请人： Brendan M. KAYES ,  Sylvia SPRYUTTE ,  I-Kang DING ,  Rose TWIST ,  Gregg HIGASHI

发明人： Brendan M. KAYES ,  Sylvia SPRYUTTE ,  I-Kang DING ,  Rose TWIST ,  Gregg HIGASHI

IPC分类号： H01L33/10 ,  H01L31/0304 ,  H01L31/0232 ,  H01L33/22

CPC分类号： H01L31/056 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/0684 ,  H01L31/0725 ,  H01L31/0735 ,  H01L33/38 ,  H01L33/52 ,  Y02E10/52 ,  Y02E10/547

摘要： An optoelectronic device is disclosed. The optoelectronic device comprises a semiconductor structure; a plurality of contacts on the front side of the semiconductor structure; and a plurality of non-continuous metal contacts on a back side of the semiconductor structure. In an embodiment, a plurality of non-continuous back contacts on an optoelectronic device improve the reflectivity and reduce the losses associated with the back surface of the device.

摘要翻译： 公开了一种光电子器件。 该光电器件包括半导体结构; 在半导体结构的正面上的多个触点; 以及在半导体结构的背侧上的多个非连续金属触点。 在一个实施例中，光电子器件上的多个非连续背接触提高了反射率并减少了与器件背面相关的损耗。

公开(公告)号：US20120305059A1

公开(公告)日：2012-12-06

申请号：US13223187

申请日：2011-08-31

申请人： Brendan M. KAYES ,  Sylvia SPRYUTTE ,  Gregg HIGASHI ,  Melissa J. ARCHER ,  Thomas J. GMITTER ,  Gang HE ,  Isik C. KIZILYALLI ,  Hui NIE

发明人： Brendan M. KAYES ,  Sylvia SPRYUTTE ,  Gregg HIGASHI ,  Melissa J. ARCHER ,  Thomas J. GMITTER ,  Gang HE ,  Isik C. KIZILYALLI ,  Hui NIE

IPC分类号： H01L31/06 ,  H01L31/0232

CPC分类号： H01L31/065 ,  H01L31/0735 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： An optoelectronic semiconductor device includes an absorber layer made of a direct bandgap semiconductor and having only one type of doping. An emitter layer is located closer than the absorber layer to a back side of the device, the emitter layer made of a different material than the absorber layer and having a higher bandgap than the absorber layer. A heterojunction is formed between the emitter layer and the absorber layer, and a p-n junction is formed between the emitter layer and the absorber layer at a location offset from the heterojunction. The p-n junction causes a voltage to be generated in the device in response to the device being exposed to light at a front side of the device. The device also includes an n-metal contact disposed on a front side of the device and a p-metal contact disposed on the back side of the device.

摘要翻译： 光电子半导体器件包括由直接带隙半导体制成并且仅具有一种掺杂类型的吸收层。 发射极层位于比器件的背面靠近吸收体层，发射极层由与吸收层不同的材料制成并具有比吸收层更高的带隙。 在发射极层和吸收层之间形成异质结，并且在偏离异质结的位置处在发射极层和吸收体层之间形成p-n结。 p-n结导致器件响应于器件暴露于器件正面的光而产生电压。 该装置还包括设置在装置的前侧上的n型金属触点和设置在该装置背面的p型金属触点。