公开(公告)号：US10331032B2

公开(公告)日：2019-06-25

申请号：US13867815

申请日：2013-04-22

Applicant: Brewer Science Inc.

Inventor： Joyce Lowes ,  Jinhua Dai ,  Alice Guerrero

IPC: G03F7/09 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40 ,  G03F7/095 ,  H01L21/266

Abstract: Photosensitive, developer-soluble bottom anti-reflective coatings are described. Compositions and methods of forming the same are also disclosed along with resulting microelectronic structures. The anti-reflective compositions comprise a multi-functional epoxy compound having multiple epoxy moieties pendant therefrom and one or more crosslinkable chromophores bonded thereto. The compounds are dispersed or dissolved in a solvent system with a vinyl ether crosslinker and can be used to create crosslinkable and de-crosslinkable coatings for microelectronics fabrication.

公开(公告)号：US10366887B2

公开(公告)日：2019-07-30

申请号：US15724662

申请日：2017-10-04

Applicant: Brewer Science Inc.

Inventor： Jinhua Dai ,  Joyce Lowes

IPC: H01L29/06 ,  H01L21/027 ,  C08F120/68 ,  C08F120/18 ,  H01L21/02 ,  B05D1/00 ,  C08L53/00 ,  G03F7/00

Abstract: The present invention is broadly concerned with materials, processes, and structures that allow an underlayer to be imaged directly using conventional lithography, thus avoiding the photoresist processing steps required by prior art directed self-assembly (DSA) processes. The underlayers can be tailored to favor a selected block of the DSA block co-polymers (BCP), depending on the pattern, and can be formulated either to initially be neutral to the BCP and switch to non-neutral after photoexposure, or can initially be non-neutral to the BCP and switch to neutral after exposure. These materials allow fast crosslinking to achieve solvent resistance and possess good thermal stability.

公开(公告)号：US20130280656A1

公开(公告)日：2013-10-24

申请号：US13867815

申请日：2013-04-22

Applicant: BREWER SCIENCE INC.

Inventor： Joyce Lowes ,  Jinhua Dai ,  Alice Guerrero

IPC: G03F7/09

CPC classification number: G03F7/091 ,  G03F7/095 ,  G03F7/20 ,  G03F7/322 ,  G03F7/40 ,  H01L21/266

Abstract: Photosensitive, developer-soluble bottom anti-reflective coatings are described. Compositions and methods of forming the same are also disclosed along with resulting microelectronic structures. The anti-reflective compositions comprise a multi-functional epoxy compound having multiple epoxy moieties pendant therefrom and one or more crosslinkable chromophores bonded thereto. The compounds are dispersed or dissolved in a solvent system with a vinyl ether crosslinker and can be used to create crosslinkable and de-crosslinkable coatings for microelectronics fabrication.

Abstract translation: 描述了感光，显影剂可溶的底部抗反射涂层。 还公开了组合物及其形成方法以及所得的微电子结构。 抗反射组合物包含具有多个环氧基部分的多官能环氧化合物，和与其结合的一个或多个可交联的发色团。 化合物分散或溶解在具有乙烯基醚交联剂的溶剂体系中，并且可以用于产生用于微电子制造的可交联和去交联的涂层。

公开(公告)号：US20180096838A1

公开(公告)日：2018-04-05

申请号：US15724662

申请日：2017-10-04

Applicant: Brewer Science Inc.

Inventor： Jinhua Dai ,  Joyce Lowes

IPC: H01L21/027 ,  C08F120/68 ,  C08F120/18 ,  B05D1/00 ,  H01L21/02

CPC classification number: H01L21/0271 ,  B05D1/005 ,  C08F120/18 ,  C08F120/68 ,  C08F220/18 ,  C08L53/00 ,  C09D133/10 ,  G03F7/0002 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02345 ,  H01L21/0337 ,  C08F2220/1858 ,  C08F2220/325 ,  C08F220/06

Abstract: The present invention is broadly concerned with materials, processes, and structures that allow an underlayer to be imaged directly using conventional lithography, thus avoiding the photoresist processing steps required by prior art directed self-assembly (DSA) processes. The underlayers can be tailored to favor a selected block of the DSA block co-polymers (BCP), depending on the pattern, and can be formulated either to initially be neutral to the BCP and switch to non-neutral after photoexposure, or can initially be non-neutral to the BCP and switch to neutral after exposure. These materials allow fast crosslinking to achieve solvent resistance and possess good thermal stability.