Abstract:
A biochip having an image sensor with a back side illumination photodiode structure includes: a biochip layer; and an image sensor layer attached to one surface of the biochip layer and configured to sense light with biochemical reaction information, which is emitted from the biochip layer, wherein the image sensor layer includes a plurality of light sensing parts which receive the light directed toward a back side of a wafer.
Abstract:
A method of bonding aluminum (Al) electrodes formed on two semiconductor substrates at a low temperature that does not affect circuits formed on the two semiconductor substrates is provided. The method includes: (a) forming aluminum (Al) electrodes on the two semiconductor substrates, respectively, and depositing a metal alloy that comprises aluminum (Al) and copper (Cu) onto the aluminum (Al) electrodes; (b) arranging the aluminum (Al) electrodes of the two semiconductor substrates to face with each other; and (c) heating the aluminum (Al) electrodes at a temperature lower than the melting point of the deposited metal alloy, and applying a specific pressure onto the two semiconductor substrates. Accordingly, bonding can be carried out at a temperature lower than the melting point of an Al0.83Cu0.17 alloy without having an effect on circuits formed on two semiconductor substrates, and can be selectively carried out at regions where pressure is applied.
Abstract:
The present invention relates to a voice coil module (VCM), and more particularly, to a VCM used for lens fixation and displacement measurement in order to prevent and control power consumption. Accordingly, in the VCM, power is not additionally consumed in order to maintain a specific position of the lens in a state that a focus of the lens is adjusted. Further, the lens is not moved and an optical axis is not distorted when a vibration occurs while an image is captured. Furthermore, the lens can be accurately controlled by measuring the present position of the lens.
Abstract:
Provided are a method of manufacturing an integrated circuit having a stacked structure by forming a crystalline semiconductor thin film on a crystalline or amorphous substrate and the integrated circuit. Accordingly, the method of manufacturing the integrated circuit having the stacked structure uses a method of growing a crystalline semiconductor thin film on a polycrystalline or amorphous substrate, so that the method can be easily performed at low costs, and high-speed processing and high-density integration can be achieved.
Abstract:
Provided is an image sensor and a method of manufacturing the same. The image sensor includes anti-reflection films which are formed between a plurality of metal wire lines of the lowest metal wiring layer and a semiconductor substrate and between one of the metal wiring layers and another metal wiring layer.The image sensor having the anti-reflection films according to the present invention can reduce color crosstalk and noises in comparison with a conventional image sensor by using the anti-reflection films formed above the surroundings of the photodiodes.
Abstract:
An image sensor with color filters capable of minimizing a distance through which incident light reaches photodiodes and flattening the color filters by minimizing step heights among color filters, and a method of manufacturing the same are provided. In the image sensor with the color filters, a metal is doped into an interlayer insulating SiO2 layer opened through a photosensitive film, and the color filters of red, green, and blue are formed in the interlayer insulating SiO2 layer through a heat treatment. In this case, a color filter array can be flattened by removing step heights among color filters generated in an conventional method in which the interlayer insulating SiO2 layer is sequentially coated with the color filters of red, green, and blue so as to form a color filter array. In addition, the distance through which the incident light reaches the photodiodes can be reduced by forming the color filters in the interlayer insulating SiO2 layer, thereby improving the sensitivity of the image sensor.
Abstract:
An image sensor using a back-illuminated photodiode and a manufacturing method thereof are provided. According to the present invention, since a surface of the back-illuminated photodiode can be stably treated, the back-illuminated photodiode can be formed to have a low dark current, a constant sensitivity of blue light for all photodiodes, and high sensitivity. In addition, it is possible to manufacture an image sensor with high density by employing a three dimensional structure in which a photodiode and a logic circuit are separately formed on different substrates.
Abstract:
The present invention relates to a voice coil module (VCM), and more particularly, to a VCM used for lens fixation and displacement measurement in order to prevent and control power consumption. Accordingly, in the VCM, power is not additionally consumed in order to maintain a specific position of the lens in a state that a focus of the lens is adjusted. Further, the lens is not moved and an optical axis is not distorted when a vibration occurs while an image is captured. Furthermore, the lens can be accurately controlled by measuring the present position of the lens.
Abstract:
There is provided a coating material having heat and abrasion resistance and low friction characteristics, as well as a method of utilizing the same. The coating material comprises 20 to 40 wt % Cr2O3, 40 to 60 wt % binder, 10 to 20 wt % WS2, and 10 to 20 wt % Ag. The binder comprises 60 to 80 wt % Ni and 20 to 40 wt % Cr. The binder may further comprise above 0 to 10 wt % Al. The coating method comprises the steps of pulverizing the coating material, pulverizing a binder, applying the pulverized binder to a surface of a workpiece to form a first layer, applying the pulverized coating material to the first layer to form a second layer, and grinding and polishing the surface of the second layer.
Abstract:
A photodiode for an image sensor capable of reducing reflection of light incident onto the photodiode and effectively absorbing transmitted light and a method of manufacturing the same are provided. In the photodiode for the image sensor, a silicon concavo-convex surface with a nano-thickness is formed by forming silicon oxide (SiO, x=0.5-1.5) layer on a silicon substrate and treating the silicon oxide layer with heat. A photodiode region is formed under the silicon layer having convexes and concaves. In this case, light absorptance increases because light reflected on the silicon concavo-convex surface is reincident onto another convex or concave. Therefore, an effective depth of the photodiode is larger than that of a planar photodiode, and accordingly, quantum efficiency of the photodiode increases.