Biochip having image sensor with back side illumination photodiode
    1.
    发明授权
    Biochip having image sensor with back side illumination photodiode 有权
    具有背面照明光电二极管的图像传感器的生物芯片

    公开(公告)号:US08361392B2

    公开(公告)日:2013-01-29

    申请号:US12985083

    申请日:2011-01-05

    Abstract: A biochip having an image sensor with a back side illumination photodiode structure includes: a biochip layer; and an image sensor layer attached to one surface of the biochip layer and configured to sense light with biochemical reaction information, which is emitted from the biochip layer, wherein the image sensor layer includes a plurality of light sensing parts which receive the light directed toward a back side of a wafer.

    Abstract translation: 具有背面照明光电二极管结构的图像传感器的生物芯片包括:生物芯片层; 以及图像传感器层,其附接到所述生物芯片层的一个表面并且被配置为用从所述生物芯片层发射的生化反应信息感测光,其中所述图像传感器层包括多个光敏部分,所述多个光感测部件接收朝向 晶片背面。

    Method of bonding aluminum electrodes of two semiconductor substrates
    2.
    发明授权
    Method of bonding aluminum electrodes of two semiconductor substrates 有权
    键合两个半导体衬底的铝电极的方法

    公开(公告)号:US07732300B2

    公开(公告)日:2010-06-08

    申请号:US11817761

    申请日:2006-03-02

    Applicant: Byoung Su Lee

    Inventor: Byoung Su Lee

    Abstract: A method of bonding aluminum (Al) electrodes formed on two semiconductor substrates at a low temperature that does not affect circuits formed on the two semiconductor substrates is provided. The method includes: (a) forming aluminum (Al) electrodes on the two semiconductor substrates, respectively, and depositing a metal alloy that comprises aluminum (Al) and copper (Cu) onto the aluminum (Al) electrodes; (b) arranging the aluminum (Al) electrodes of the two semiconductor substrates to face with each other; and (c) heating the aluminum (Al) electrodes at a temperature lower than the melting point of the deposited metal alloy, and applying a specific pressure onto the two semiconductor substrates. Accordingly, bonding can be carried out at a temperature lower than the melting point of an Al0.83Cu0.17 alloy without having an effect on circuits formed on two semiconductor substrates, and can be selectively carried out at regions where pressure is applied.

    Abstract translation: 提供了一种在不影响形成在两个半导体衬底上的电路的低温下形成在两个半导体衬底上的铝(Al)电极的接合方法。 该方法包括:(a)分别在两个半导体衬底上形成铝(Al)电极,并将包含铝(Al)和铜(Cu)的金属合金沉积到铝(Al)电极上; (b)使两个半导体衬底的铝(Al)电极彼此面对; 和(c)在低于沉积的金属合金的熔点的温度下加热铝(Al)电极,并在两个半导体衬底上施加特定的压力。 因此,可以在不低于Al0.83Cu0.17合金的熔点的温度下进行接合,而不会对形成在两个半导体基板上的电路产生影响,并且可以在施加压力的区域选择性地进行。

    Voice Coil Module
    3.
    发明申请
    Voice Coil Module 有权
    音圈模块

    公开(公告)号:US20080304154A1

    公开(公告)日:2008-12-11

    申请号:US12159294

    申请日:2007-01-09

    Applicant: Byoung Su Lee

    Inventor: Byoung Su Lee

    CPC classification number: G02B7/08 H02K7/1085 H02K33/18 H02K41/0356

    Abstract: The present invention relates to a voice coil module (VCM), and more particularly, to a VCM used for lens fixation and displacement measurement in order to prevent and control power consumption. Accordingly, in the VCM, power is not additionally consumed in order to maintain a specific position of the lens in a state that a focus of the lens is adjusted. Further, the lens is not moved and an optical axis is not distorted when a vibration occurs while an image is captured. Furthermore, the lens can be accurately controlled by measuring the present position of the lens.

    Abstract translation: 本发明涉及一种音圈模块(VCM),更具体地说,涉及用于透镜固定和位移测量的VCM,以便防止和控制功耗。 因此,在VCM中,为了将透镜的特定位置维持在调整了透镜的焦点的状态,不会额外消耗功率。 此外,当拍摄图像时发生振动时,透镜不移动并且光轴不失真。 此外,可以通过测量透镜的当前位置来精确地控制透镜。

    METHOD OF MANUFACTURING INTEGRATED CIRCUIT HAVING STACKED STRUCTURE AND THE INTEGRATED CIRCUIT
    4.
    发明申请
    METHOD OF MANUFACTURING INTEGRATED CIRCUIT HAVING STACKED STRUCTURE AND THE INTEGRATED CIRCUIT 审中-公开
    具有堆叠结构和集成电路的集成电路的制造方法

    公开(公告)号:US20100081233A1

    公开(公告)日:2010-04-01

    申请号:US12516364

    申请日:2007-12-07

    Applicant: Byoung Su Lee

    Inventor: Byoung Su Lee

    CPC classification number: H01L27/0688 H01L21/8221

    Abstract: Provided are a method of manufacturing an integrated circuit having a stacked structure by forming a crystalline semiconductor thin film on a crystalline or amorphous substrate and the integrated circuit. Accordingly, the method of manufacturing the integrated circuit having the stacked structure uses a method of growing a crystalline semiconductor thin film on a polycrystalline or amorphous substrate, so that the method can be easily performed at low costs, and high-speed processing and high-density integration can be achieved.

    Abstract translation: 提供一种通过在晶体或非晶衬底和集成电路上形成晶体半导体薄膜来制造具有堆叠结构的集成电路的方法。 因此,具有层叠结构的集成电路的制造方法使用在多晶或非晶基板上生长结晶半导体薄膜的方法,从而可以容易地以低成本执行该方法,并且高速处理和高速处理, 可以实现密度整合。

    Image Sensor Having Anti-Reflection Film and Method of Manufacturing the Same
    5.
    发明申请
    Image Sensor Having Anti-Reflection Film and Method of Manufacturing the Same 有权
    具有防反射膜的图像传感器及其制造方法

    公开(公告)号:US20090008737A1

    公开(公告)日:2009-01-08

    申请号:US12160366

    申请日:2006-12-07

    CPC classification number: H01L27/14685 H01L27/14623 H01L27/1463

    Abstract: Provided is an image sensor and a method of manufacturing the same. The image sensor includes anti-reflection films which are formed between a plurality of metal wire lines of the lowest metal wiring layer and a semiconductor substrate and between one of the metal wiring layers and another metal wiring layer.The image sensor having the anti-reflection films according to the present invention can reduce color crosstalk and noises in comparison with a conventional image sensor by using the anti-reflection films formed above the surroundings of the photodiodes.

    Abstract translation: 提供了一种图像传感器及其制造方法。 图像传感器包括形成在最下层金属布线层的多根金属布线和半导体基板之间以及一个金属布线层和另一个金属布线层之间的防反射膜。 根据本发明的具有防反射膜的图像传感器可以通过使用形成在光电二极管周围的防反射膜与现有的图像传感器相比来减少颜色串扰和噪声。

    Image Sensor with Color Filters and Method of Manufacturing the Same
    6.
    发明申请
    Image Sensor with Color Filters and Method of Manufacturing the Same 审中-公开
    带有滤色片的图像传感器及其制造方法

    公开(公告)号:US20080296713A1

    公开(公告)日:2008-12-04

    申请号:US12097477

    申请日:2006-12-07

    Abstract: An image sensor with color filters capable of minimizing a distance through which incident light reaches photodiodes and flattening the color filters by minimizing step heights among color filters, and a method of manufacturing the same are provided. In the image sensor with the color filters, a metal is doped into an interlayer insulating SiO2 layer opened through a photosensitive film, and the color filters of red, green, and blue are formed in the interlayer insulating SiO2 layer through a heat treatment. In this case, a color filter array can be flattened by removing step heights among color filters generated in an conventional method in which the interlayer insulating SiO2 layer is sequentially coated with the color filters of red, green, and blue so as to form a color filter array. In addition, the distance through which the incident light reaches the photodiodes can be reduced by forming the color filters in the interlayer insulating SiO2 layer, thereby improving the sensitivity of the image sensor.

    Abstract translation: 一种具有滤色器的图像传感器及其制造方法,该滤色器能够使入射光到达光电二极管的距离最小化,并且通过最小化滤色器的步进高度来平坦化滤色器。 在具有滤色片的图像传感器中,金属被掺杂到通过感光膜开放的层间绝缘SiO 2层中,并且通过热处理在层间绝缘SiO 2层中形成红色,绿色和蓝色的滤色器。 在这种情况下,滤色器阵列可以通过去除在传统方法中产生的滤色器中的阶梯高度,其中层间绝缘SiO 2层依次涂覆有红色,绿色和蓝色的滤色器,以形成颜色 过滤器阵列。 此外,通过在层间绝缘SiO 2层中形成滤色器,可以减少入射光到达光电二极管的距离,从而提高图像传感器的灵敏度。

    Image sensor using back-illuminated photodiode and method of manufacturing the same
    7.
    发明授权
    Image sensor using back-illuminated photodiode and method of manufacturing the same 有权
    使用背照式光电二极管的图像传感器及其制造方法

    公开(公告)号:US07714403B2

    公开(公告)日:2010-05-11

    申请号:US12305511

    申请日:2007-06-14

    Abstract: An image sensor using a back-illuminated photodiode and a manufacturing method thereof are provided. According to the present invention, since a surface of the back-illuminated photodiode can be stably treated, the back-illuminated photodiode can be formed to have a low dark current, a constant sensitivity of blue light for all photodiodes, and high sensitivity. In addition, it is possible to manufacture an image sensor with high density by employing a three dimensional structure in which a photodiode and a logic circuit are separately formed on different substrates.

    Abstract translation: 提供了使用背照式光电二极管的图像传感器及其制造方法。 根据本发明,由于可以稳定地对背照式光电二极管的表面进行处理,因此可以将背照式光电二极管形成为具有低暗电流,对于所有光电二极管的蓝光的灵敏度恒定和高灵敏度。 此外,可以通过采用其中光电二极管和逻辑电路分开形成在不同基板上的三维结构来制造高密度的图像传感器。

    Voice coil module
    8.
    发明授权
    Voice coil module 有权
    音圈模块

    公开(公告)号:US07663824B2

    公开(公告)日:2010-02-16

    申请号:US12159294

    申请日:2007-01-09

    Applicant: Byoung Su Lee

    Inventor: Byoung Su Lee

    CPC classification number: G02B7/08 H02K7/1085 H02K33/18 H02K41/0356

    Abstract: The present invention relates to a voice coil module (VCM), and more particularly, to a VCM used for lens fixation and displacement measurement in order to prevent and control power consumption. Accordingly, in the VCM, power is not additionally consumed in order to maintain a specific position of the lens in a state that a focus of the lens is adjusted. Further, the lens is not moved and an optical axis is not distorted when a vibration occurs while an image is captured. Furthermore, the lens can be accurately controlled by measuring the present position of the lens.

    Abstract translation: 本发明涉及一种音圈模块(VCM),更具体地说,涉及用于透镜固定和位移测量的VCM,以便防止和控制功耗。 因此,在VCM中,为了将透镜的特定位置维持在调整了透镜的焦点的状态,不会额外消耗功率。 此外,当拍摄图像时发生振动时,透镜不移动并且光轴不失真。 此外,可以通过测量透镜的当前位置来精确地控制透镜。

    Photodiode for Image Sensor and Method of Manufacturing the Same
    10.
    发明申请
    Photodiode for Image Sensor and Method of Manufacturing the Same 审中-公开
    用于图像传感器的光电二极管及其制造方法

    公开(公告)号:US20080290440A1

    公开(公告)日:2008-11-27

    申请号:US12097469

    申请日:2006-12-04

    Applicant: Byoung Su Lee

    Inventor: Byoung Su Lee

    CPC classification number: H01L27/1462 H01L27/14685 H01L31/02363 Y02E10/50

    Abstract: A photodiode for an image sensor capable of reducing reflection of light incident onto the photodiode and effectively absorbing transmitted light and a method of manufacturing the same are provided. In the photodiode for the image sensor, a silicon concavo-convex surface with a nano-thickness is formed by forming silicon oxide (SiO, x=0.5-1.5) layer on a silicon substrate and treating the silicon oxide layer with heat. A photodiode region is formed under the silicon layer having convexes and concaves. In this case, light absorptance increases because light reflected on the silicon concavo-convex surface is reincident onto another convex or concave. Therefore, an effective depth of the photodiode is larger than that of a planar photodiode, and accordingly, quantum efficiency of the photodiode increases.

    Abstract translation: 提供了能够减少入射到光电二极管上的光的反射并有效吸收透射光的图像传感器的光电二极管及其制造方法。 在用于图像传感器的光电二极管中,通过在硅衬底上形成氧化硅(SiO,x = 0.5-1.5)层并用热处理氧化硅层,形成具有纳米厚度的硅凹凸表面。 在具有凸部和凹部的硅层的下方形成光电二极管区域。 在这种情况下,光吸收率增加,因为在硅凹凸表面上反射的光重新占据另一个凸或凹。 因此,光电二极管的有效深度大于平面光电二极管的有效深度,因此光电二极管的量子效率增加。

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