摘要:
A semiconductor device includes a substrate and a first layer of a first conductive material on the substrate, the first layer having a first etching rate. A second layer of a second conductive material has a first hole on a portion of the first layer, the second layer having a second etching rate higher than the first etching rate. A third layer includes a combination of the first and second layers between the first and the second layers, the third layer having a third etching rate lower than the second etching rate. An insulating layer has a second hole on the third layer, the insulating layer having a fourth etching rate higher than the first etching rate. A transparent conductive layer is on the third layer through the first and second holes.
摘要:
A semiconductor device includes a substrate and a first layer of a first conductive material on the substrate, the first layer having a first etching rate. A second layer of a second conductive material has a first hole on a portion of the first layer, the second layer having a second etching rate higher than the first etching rate. A third layer includes a combination of the first and second layers between the first and the second layers, the third layer having a third etching rate lower than the second etching rate. An insulating layer has a second hole on the third layer, the insulating layer having a fourth etching rate higher than the first etching rate. A transparent conductive layer is on the third layer through the first and second holes.
摘要:
A method of patterning a transparent conductive film adaptive for selectively etching a transparent conductive film without any mask processes, a thin film transistor for a display device using the same and a fabricating method thereof are disclosed. In the method of patterning the transparent conductive film, an inorganic material substrate is prepared. An organic material pattern is formed at a desired area of the inorganic material substrate. A thin film having a different crystallization rate depending upon said inorganic material and said organic material is formed. The thin film is selectively etched in accordance with said crystallization rate.
摘要:
A liquid crystal display device and a fabricating method thereof for simplifying a process are disclosed. In the method of fabricating the liquid crystal display device, a first conductive pattern group including a gate line and a gate electrode, a common line and a common electrode, a pixel electrode and a pad is formed on a substrate. An insulating film including a plurality of contact holes and a semiconductor pattern is formed on the first mask pattern group. And a second conductive pattern group including a data line, a source electrode and a drain electrode is formed on an insulating film provided with the semiconductor pattern, and exposes an active layer of the semiconductor pattern.
摘要:
A method of patterning a transparent conductive film adaptive for selectively etching a transparent conductive film without any mask processes, a thin film transistor for a display device using the same and a fabricating method thereof are disclosed. In the method of patterning the transparent conductive film, an inorganic material substrate is prepared. An organic material pattern is formed at a desired area of the inorganic material substrate. A thin film having a different crystallization rate depending upon said inorganic material and said organic material is formed. The thin film is selectively etched in accordance with said crystallization rate.
摘要:
Provided are an organic light emitting device and a manufacturing method thereof. The organic light emitting device includes a first display substrate, a second display substrate, and a first adhesive force improving member. The first display substrate includes a first substrate, a first electrode, organic light emitting patterns, a first spacer, and a second electrode. The first electrode is formed on an entire surface of the first substrate, and the organic light emitting patterns are disposed on the first electrode. The first spacer corresponds to the organic light emitting pattern and is disposed on the first electrode. The second electrode covers the organic light emitting patterns and the first spacer. The second display substrate includes a second substrate, and a first driving signal delivery part. The first adhesive force improving member electrically/physically couples the second electrode to the first driving signal delivery part.
摘要:
A liquid crystal display device and a fabricating method thereof for simplifying a process are disclosed. In the method of fabricating the liquid crystal display device, a first conductive pattern group including a gate line and a gate electrode, a common line and a common electrode, a pixel electrode and a pad is formed on a substrate. An insulating film including a plurality of contact holes and a semiconductor pattern is formed on the first mask pattern group. And a second conductive pattern group including a data line, a source electrode and a drain electrode is formed on an insulating film provided with the semiconductor pattern, and exposes an active layer of the semiconductor pattern.
摘要:
A lamp and a back light unit for improved brightness and efficiency are disclosed. In the lamp, a transparent tube is sealed with a discharge gas. A fluorescent material is formed within the transparent tube in an emitter section that generates light. Electrodes are installed at both sides of the glass tube.
摘要:
A method of fabricating a liquid crystal display device includes in a first mask process, forming a first mask pattern group including a gate line, a gate electrode connected to the gate line and a common line parallel to the gate line that have a first conductive layer group structure having at least double conductive layers. A second mask process forms a gate insulating film on the first mask pattern group and a semiconductor pattern thereon. A third mask process forms a third mask pattern group including a data line, a source electrode connected to the data line and a drain electrode opposite the source electrode that have a second conductive layer group structure having at least double conductive layers, and a protective film interfacing with the third mask pattern group on the gate insulating film.
摘要:
A thin film transistor substrate and a fabricating method thereof; and a liquid crystal display panel employing the same and a fabricating method thereof for simplifying a process are disclosed. A thin film transistor substrate, including: a gate line on a substrate; a data line crossing the gate line having a gate insulating film therebetween to define a pixel area; a pixel hole in the pixel area; a pixel electrode made of a transparent conductive film on the gate insulating film in the pixel hole in the pixel area; and a thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode connected to the pixel electrode, and a semiconductor layer defining a channel between the source electrode and the drain electrode, wherein the semiconductor layer overlaps with a source/drain metal pattern including the data line, the source electrode, and the drain electrode; wherein the drain electrode protrudes from the semiconductor layer toward an upper portion of the pixel electrode, and the drain electrode connects to the pixel electrode; and wherein the semiconductor layer is removed from where it overlaps the transparent conductive film.