公开(公告)号：US20200335533A1

公开(公告)日：2020-10-22

申请号：US16847454

申请日：2020-04-13

Applicant: CANON KABUSHIKI KAISHA

Inventor： Takashi Matsuda

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/351

Abstract: The first photoelectric conversion unit and the second photoelectric conversion unit each include a first semiconductor region of a first conductivity type disposed at a first depth, a second semiconductor region of a second conductivity type disposed at a second depth, a third semiconductor region of the first conductivity type disposed at a third depth, and a fourth semiconductor region of the second conductivity type disposed at a fourth depth. An impurity concentration of the second semiconductor region of the first photoelectric conversion unit and an impurity concentration of the second semiconductor region of the second photoelectric conversion unit are different at the second depth.

公开(公告)号：US09571769B2

公开(公告)日：2017-02-14

申请号：US14716672

申请日：2015-05-19

Applicant: CANON KABUSHIKI KAISHA

Inventor： Yuichiro Yamashita ,  Takashi Matsuda

IPC: H04N5/3745 ,  H04N5/341 ,  H04N5/378

CPC classification number: H04N5/37457 ,  H04N5/341 ,  H04N5/378

Abstract: A solid-state image pickup device which includes, on a semiconductor substrate, an image pickup area which includes plural columns of pixels, and plural column amplifier circuits each provided at each column of pixels or at every plural columns of pixels, wherein: each of the column amplifier circuits includes at least two amplifier circuit stages; a preceding amplifier circuit is a variable-gain amplifier circuit and the switchable gains include plural one or more gains; and a subsequent amplifier circuit is capable of amplifying, at one or more gains, the signal amplified at one or more gains in the preceding amplifier circuit.

Abstract translation: 一种固体摄像装置，在半导体基板上具有包括多列像素的图像拾取区域，以及分别设置在每列像素或每列像素的多列列放大电路，其中： 列放大器电路包括至少两个放大器电路级; 前一放大器电路是可变增益放大器电路，并且可切换增益包括多个一个或多个增益; 并且随后的放大器电路能够以一个或多个增益放大在前一放大器电路中以一个或多个增益放大的信号。

公开(公告)号：US20130248688A1

公开(公告)日：2013-09-26

申请号：US13801353

申请日：2013-03-13

Applicant: CANON KABUSHIKI KAISHA

Inventor： Yuichiro Yamashita ,  Takashi Matsuda

IPC: H04N5/369

CPC classification number: H04N5/3698 ,  H04N5/357

Abstract: An embodiment of an image pickup apparatus according to the present invention includes, on a semiconductor substrate, an imaging area having a plurality of pixel columns and a plurality of column circuits each of which is provided for each pixel column or a plurality of pixel columns. Each of the column circuits has a first circuit block and a second circuit block, and the first and second circuit blocks receive a bias voltage via a common wire. The first circuit block includes an amplifier circuit. The second circuit block is configured to be capable of switching between a first mode and a second mode with smaller power consumption than the first mode. A shift period from the second mode to the first mode by the second circuit block is a period excluding a period during which an amplifier circuit in the first circuit block is performing an amplifying operation.

Abstract translation: 根据本发明的图像拾取装置的一个实施例在半导体衬底上包括具有多个像素列的成像区域和为每个像素列或多个像素列设置的多个列电路。 每个列电路具有第一电路块和第二电路块，并且第一和第二电路块经由公共导线接收偏置电压。 第一电路块包括放大器电路。 第二电路块被配置为能够以比第一模式更小的功率消耗在第一模式和第二模式之间切换。 第二电路块从第二模式到第一模式的移位周期是除了第一电路块中的放大器电路正在执行放大操作的周期之外的周期。

公开(公告)号：US20130092983A1

公开(公告)日：2013-04-18

申请号：US13707374

申请日：2012-12-06

Applicant: CANON KABUSHIKI KAISHA

Inventor： Takashi Matsuda ,  Toru Koizumi

IPC: H01L27/146 ,  H01L27/148

CPC classification number: H01L27/14621 ,  H01L27/1463 ,  H01L27/14683 ,  H01L27/14806

Abstract: A plurality of photoelectric conversion elements including a first photoelectric conversion element, a second photoelectric conversion element, and a third photoelectric conversion element, are arranged in a photoelectric conversion apparatus of the present invention. Provided, between the first photoelectric conversion element and the second photoelectric conversion element, is a first semiconductor region of a first conductivity type and of a first width in which a signal charge is a minor charier. And, provided, between the first photoelectric conversion element and the third photoelectric conversion element, is a second semiconductor region of the first conductivity type in a higher impurity concentration and of a second width narrower than the first width at a position deeper in a semiconductor substrate rather than a depth of the first semiconductor region.

Abstract translation: 包括第一光电转换元件，第二光电转换元件和第三光电转换元件的多个光电转换元件被布置在本发明的光电转换设备中。 提供在第一光电转换元件和第二光电转换元件之间，是第一导电类型的第一半导体区域和信号电荷是次要栅极的第一宽度。 并且，在第一光电转换元件和第三光电转换元件之间，是在半导体衬底中较深的位置处的第一导电类型的第二半导体区域，其杂质浓度较高，第二宽度窄于第一宽度 而不是第一半导体区域的深度。

公开(公告)号：US20150256783A1

公开(公告)日：2015-09-10

申请号：US14716672

申请日：2015-05-19

Applicant: CANON KABUSHIKI KAISHA

Inventor： Yuichiro Yamashita ,  Takashi Matsuda

IPC: H04N5/3745 ,  H04N5/378

CPC classification number: H04N5/37457 ,  H04N5/341 ,  H04N5/378

Abstract: A solid-state image pickup device which includes, on a semiconductor substrate, an image pickup area which includes plural columns of pixels, and plural column amplifier circuits each provided at each column of pixels or at every plural columns of pixels, wherein: each of the column amplifier circuits includes at least two amplifier circuit stages; a preceding amplifier circuit is a variable-gain amplifier circuit and the switchable gains include plural one or more gains; and a subsequent amplifier circuit is capable of amplifying, at one or more gains, the signal amplified at one or more gains in the preceding amplifier circuit.

Abstract translation: 一种固体摄像装置，在半导体基板上具有包括多列像素的图像拾取区域，以及分别设置在每列像素或每列像素的多列列放大电路，其中： 列放大器电路包括至少两个放大器电路级; 前一放大器电路是可变增益放大器电路，并且可切换增益包括多个一个或多个增益; 并且随后的放大器电路能够以一个或多个增益放大在前一放大器电路中以一个或多个增益放大的信号。

公开(公告)号：US11437417B2

公开(公告)日：2022-09-06

申请号：US16847454

申请日：2020-04-13

Applicant: CANON KABUSHIKI KAISHA

Inventor： Takashi Matsuda

IPC: H01L27/146 ,  H04N5/351 ,  H04N5/378

Abstract: The first photoelectric conversion unit and the second photoelectric conversion unit each include a first semiconductor region of a first conductivity type disposed at a first depth, a second semiconductor region of a second conductivity type disposed at a second depth, a third semiconductor region of the first conductivity type disposed at a third depth, and a fourth semiconductor region of the second conductivity type disposed at a fourth depth. An impurity concentration of the second semiconductor region of the first photoelectric conversion unit and an impurity concentration of the second semiconductor region of the second photoelectric conversion unit are different at the second depth.

公开(公告)号：US09276036B2

公开(公告)日：2016-03-01

申请号：US14016667

申请日：2013-09-03

Applicant: CANON KABUSHIKI KAISHA

Inventor： Yu Arishima ,  Takashi Matsuda ,  Toru Koizumi

IPC: H01L27/148 ,  H01L27/146 ,  H04N5/359

CPC classification number: H01L27/14887 ,  H01L27/1463 ,  H04N5/359

Abstract: If separations between photoelectric conversion elements are different from each other, charge leaking into adjacent photoelectric conversion elements varies. A photoelectric conversion apparatus of the present invention includes a first semiconductor region that can be potential barriers against signal charge, between first and second photoelectric conversion elements. Further, the apparatus includes a second semiconductor region that has the same depth as the depth of the first semiconductor region and a width narrower than the width of the first semiconductor region and can be potential barriers against the signal charge, between the first and a third photoelectric conversion element. Moreover, the apparatus includes a third semiconductor region that can be potential barriers against the signal charge under the first semiconductor region and the second semiconductor region.

公开(公告)号：US09257459B2

公开(公告)日：2016-02-09

申请号：US13738878

申请日：2013-01-10

Applicant: CANON KABUSHIKI KAISHA

Inventor： Shinichiro Shimizu ,  Takashi Matsuda ,  Yuichiro Yamashita ,  Toshiaki Ono

IPC: H01L27/146 ,  H04N5/357 ,  H04N5/365 ,  H04N5/376

CPC classification number: H01L27/146 ,  H04N5/3577 ,  H04N5/3658 ,  H04N5/376

Abstract: An image pickup apparatus of the present invention includes a clipping circuit that clips the voltage of an input node of an amplifying unit in a pixel. The clipping circuit can operate at least in a time period in which a charge is transferred from a photoelectric conversion unit to the input node of the amplifying unit, and can switch among multiple clipping voltages.

Abstract translation: 本发明的图像拾取装置包括限幅电路，其将像素中的放大单元的输入节点的电压钳位。 至少在从光电转换单元向放大单元的输入节点传送电荷的时间段中，限幅电路可以工作，并且可以在多个限幅电压之间切换。

公开(公告)号：US20160035921A1

公开(公告)日：2016-02-04

申请号：US14811670

申请日：2015-07-28

Applicant: CANON KABUSHIKI KAISHA

Inventor： Takashi Matsuda ,  Sho Suzuki ,  Hidekazu Takahashi ,  Nobuhiko Sato

IPC: H01L31/0352 ,  H04N5/225 ,  H01L27/146

CPC classification number: H04N5/2253 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14665 ,  H01L27/14694

Abstract: A photoelectric conversion apparatus includes a photoelectric conversion unit having a light incident surface and including: a first electrode; a second electrode disposed further toward the light incident surface; and a photoelectric conversion layer disposed between the first and second electrodes. The photoelectric conversion apparatus includes a member in contact with the photoelectric conversion layer and constituting a light guide together with the layer. An area of a first surface parallel to the light incident surface at a portion of the photoelectric conversion layer surrounded by the member is smaller than an area of a second surface disposed between the first surface and the second electrode at a portion of the photoelectric conversion layer surrounded by the member, and an area of orthogonal projection to the light incident surface of the first electrode is smaller than an area of orthogonal projection to the light incident surface of the second surface.

Abstract translation: 光电转换装置包括具有光入射表面的光电转换单元，包括：第一电极; 设置成进一步朝向所述光入射面的第二电极; 以及设置在第一和第二电极之间的光电转换层。 光电转换装置包括与光电转换层接触并与层一起构成光导的部件。 在由该构件包围的光电转换层的一部分处平行于光入射面的第一表面的面积小于在光电转换层的一部分处设置在第一表面和第二电极之间的第二表面的面积 并且与第一电极的光入射面正交投影的区域小于与第二面的光入射面正交投影的面积。

公开(公告)号：US09048155B2

公开(公告)日：2015-06-02

申请号：US13707374

申请日：2012-12-06

Applicant: CANON KABUSHIKI KAISHA

Inventor： Takashi Matsuda ,  Toru Koizumi

IPC: H04N5/335 ,  H01L27/146 ,  H01L27/148

CPC classification number: H01L27/14621 ,  H01L27/1463 ,  H01L27/14683 ,  H01L27/14806

Abstract: A plurality of photoelectric conversion elements including a first photoelectric conversion element, a second photoelectric conversion element, and a third photoelectric conversion element, are arranged in a photoelectric conversion apparatus of the present invention. Provided, between the first photoelectric conversion element and the second photoelectric conversion element, is a first semiconductor region of a first conductivity type and of a first width in which a signal charge is a minor charier. And, provided, between the first photoelectric conversion element and the third photoelectric conversion element, is a second semiconductor region of the first conductivity type in a higher impurity concentration and of a second width narrower than the first width at a position deeper in a semiconductor substrate rather than a depth of the first semiconductor region.

Abstract translation: 包括第一光电转换元件，第二光电转换元件和第三光电转换元件的多个光电转换元件被布置在本发明的光电转换设备中。 提供在第一光电转换元件和第二光电转换元件之间，是第一导电类型的第一半导体区域和信号电荷是次要栅极的第一宽度。 并且，在第一光电转换元件和第三光电转换元件之间，是在半导体衬底中较深的位置处的第一导电类型的第二半导体区域，其杂质浓度较高，第二宽度窄于第一宽度 而不是第一半导体区域的深度。