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    Solid-state image pickup element and image pickup system
    1.
    发明授权
    Solid-state image pickup element and image pickup system 有权

    公开(公告)号：US11159756B2

    公开(公告)日：2021-10-26

    申请号：US16148490

    申请日：2018-10-01

    申请人： CANON KABUSHIKI KAISHA

    发明人： Toshiaki Ono ,  Masatsugu Itahashi ,  Naoki Inatani ,  Yu Maehashi ,  Hidekazu Takahashi

    IPC分类号： H04N5/3745 ,  H04N5/217 ,  H01L27/146

    摘要： At least one solid-state image pickup element includes a plurality of pixels that are arranged in a two-dimensional manner. Each of the plurality of pixels includes a plurality of photoelectric conversion units each including a pixel electrode, a photoelectric conversion layer disposed on the pixel electrode, and a counter electrode disposed such that the photoelectric conversion layer is sandwiched between the pixel electrode and the counter electrode. In one or more embodiments, each of the plurality of pixels also includes a microlens disposed on the plurality of photoelectric conversion units.

    DISPLAY DEVICE AND DISPLAY SYSTEM
    2.
    发明申请
    DISPLAY DEVICE AND DISPLAY SYSTEM 有权

    公开(公告)号：US20210013453A1

    公开(公告)日：2021-01-14

    申请号：US16925119

    申请日：2020-07-09

    申请人： CANON KABUSHIKI KAISHA

    发明人： Yojiro Matsuda ,  Hidekazu Takahashi ,  Yoshihito Harada

    IPC分类号： H01L51/52

    摘要： A display device includes a display region in which a plurality of pixels are arranged two-dimensionally. Each of the plurality of pixels includes a light-emitting layer and an optical member that refracts light from the light-emitting layer. In an orthographic projection of a first optical member included in a first pixel with respect to the light-emitting layer, a position of an apex of the first optical member and a position of a center of the first optical member are separated by a first distance.

    Photoelectric conversion device and imaging system
    6.
    发明授权
    Photoelectric conversion device and imaging system 有权
    光电转换装置及成像系统

    公开(公告)号：US09571768B2

    公开(公告)日：2017-02-14

    申请号：US14794653

    申请日：2015-07-08

    申请人： CANON KABUSHIKI KAISHA

    发明人： Kazuaki Tashiro ,  Noriyuki Kaifu ,  Hidekazu Takahashi

    IPC分类号： H04N3/14 ,  H04N5/335 ,  H04N5/374 ,  H04N5/357 ,  H04N5/378 ,  H04N5/369 ,  H04N5/376 ,  H04N5/3745 ,  H04N5/355

    CPC分类号： H04N5/363 ,  H04N5/355 ,  H04N5/35572 ,  H04N5/3559 ,  H04N5/357 ,  H04N5/3698 ,  H04N5/374 ,  H04N5/3741 ,  H04N5/37455 ,  H04N5/3765 ,  H04N5/378

    摘要： A photoelectric conversion device according to an exemplary embodiment includes a pixel which includes a photoelectric conversion unit, a reset transistor, and an amplifier transistor that outputs a signal from the photoelectric conversion unit. The photoelectric conversion unit includes a first electrode, a second electrode, a photoelectric conversion layer, and an insulating layer disposed between the photoelectric conversion layer and the second electrode. The photoelectric conversion unit alternately performs an accumulation operation and a discharge operation in accordance with the voltage between the first electrode and the second electrode. In a period between two consecutive discharge operations among a plurality of discharge operations, a reset operation in which the reset transistor resets the voltage on the second electrode is performed a plurality of times.

    摘要翻译： 根据示例性实施例的光电转换装置包括包括光电转换单元，复位晶体管和输出来自光电转换单元的信号的放大器晶体管的像素。 光电转换单元包括第一电极，第二电极，光电转换层和设置在光电转换层和第二电极之间的绝缘层。 光电转换单元根据第一电极和第二电极之间的电压交替地执行累积操作和放电操作。 在多个放电操作中的两个连续放电操作之间的时段中，执行复位晶体管复位第二电极上的电压的复位操作多次。

    SOLID-STATE IMAGE SENSOR AND CAMERA
    7.
    发明申请
    SOLID-STATE IMAGE SENSOR AND CAMERA 审中-公开

    公开(公告)号：US20160133663A1

    公开(公告)日：2016-05-12

    申请号：US14982494

    申请日：2015-12-29

    申请人： CANON KABUSHIKI KAISHA

    发明人： Masaaki Minowa ,  Hidekazu Takahashi ,  Yuichiro Yamashita ,  Akira Okita

    IPC分类号： H01L27/146 ,  H01L27/148

    CPC分类号： H01L27/14607 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14812 ,  H04N5/335

    摘要： An image sensor includes a semiconductor substrate having first and second faces. The sensor includes a plurality of pixel groups each including pixels, each pixel having a photoelectric converter and a wiring pattern, the converter including a region whose major carriers are the same with charges to be accumulated in the photoelectric converter. The sensor also includes a microlenses which are located so that one microlens is arranged for each pixel group. The wiring patterns are located at a side of the first face, and the plurality of microlenses are located at a side of the second face. Light-incidence faces of the regions of the photoelectric converters of each pixel group are arranged along the second face such that the light-incidence faces are apart from each other in a direction along the second face.

    Solid-state image sensor and camera having a plurality of photoelectric converters under a microlens
    8.
    发明授权
    Solid-state image sensor and camera having a plurality of photoelectric converters under a microlens 有权
    在微透镜下具有多个光电转换器的固态图像传感器和相机

    公开(公告)号：US09300884B2

    公开(公告)日：2016-03-29

    申请号：US13627507

    申请日：2012-09-26

    申请人： CANON KABUSHIKI KAISHA

    发明人： Masaaki Minowa ,  Hidekazu Takahashi ,  Yuichiro Yamashita ,  Akira Okita

    IPC分类号： H04N5/225 ,  H01L27/146 ,  H04N5/335

    CPC分类号： H01L27/14607 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14812 ,  H04N5/335

    摘要： An image sensor includes a semiconductor substrate having first and second faces. The sensor includes a plurality of pixel groups each including pixels, each pixel having a photoelectric converter and a wiring pattern, the converter including a region whose major carriers are the same with charges to be accumulated in the photoelectric converter. The sensor also includes a microlenses which are located so that one microlens is arranged for each pixel group. The wiring patterns are located at a side of the first face, and the plurality of microlenses are located at a side of the second face. Light-incidence faces of the regions of the photoelectric converters of each pixel group are arranged along the second face such that the light-incidence faces are apart from each other in a direction along the second face.

    摘要翻译： 图像传感器包括具有第一和第二面的半导体衬底。 传感器包括多个像素组，每个像素组包括像素，每个像素具有光电转换器和布线图案，转换器包括主要载流子与要积聚在光电转换器中的电荷相同的区域。 该传感器还包括微透镜，该微透镜被定位成使得每个像素组布置一个微透镜。 布线图案位于第一面的一侧，多个微透镜位于第二面的一侧。 每个像素组的光电转换器的区域的入射面沿着第二面布置，使得光入射面在沿着第二面的方向上彼此分开。

    Photoelectric conversion device, imaging system and mobile body
    9.
    发明授权
    Photoelectric conversion device, imaging system and mobile body 有权

    公开(公告)号：US10819931B2

    公开(公告)日：2020-10-27

    申请号：US16362844

    申请日：2019-03-25

    申请人： CANON KABUSHIKI KAISHA

    发明人： Tatsuhito Goden ,  Hidekazu Takahashi

    IPC分类号： H04N5/374 ,  H04N5/3745 ,  H04N5/378 ,  H01L27/30

    摘要： A photoelectric conversion device including: a photoelectric conversion unit; a storing unit configured to store a photoelectric conversion signal from the photoelectric conversion unit; a first amplifier transistor configured to output a photoelectric conversion signal from the storing unit; a transistor configured to write an output signal of the first amplifier transistor to a first terminal of a holding capacitor; a second amplifier transistor, a gate of which is connected to the first terminal, and which is configured to output a voltage in accordance with a voltage of the first terminal; and a control unit configured to switch a voltage of a second terminal of the holding capacitor.