METHODS FOR FABRICATING A THIN FILM TRANSISTOR AND AN ARRAY SUBSTRATE
    2.
    发明申请
    METHODS FOR FABRICATING A THIN FILM TRANSISTOR AND AN ARRAY SUBSTRATE 审中-公开
    用于制造薄膜晶体管和阵列基板的方法

    公开(公告)号:US20140206139A1

    公开(公告)日:2014-07-24

    申请号:US14106658

    申请日:2013-12-13

    发明人: Shuibin NI Zhen WANG

    IPC分类号: H01L27/12 H01L29/66

    摘要: The present invention provides methods for fabricating a thin film transistor and an array substrate, which are applicable in the field of display device fabrication, and solve the problem of performing patterning process too many times during the fabrications of a thin film transistor and an array substrate. The method for fabricating a thin film transistor comprises: forming a gate layer on a substrate; forming a gate insulation layer on the substrate; forming an oxide semiconductor layer and a barrier layer and on the substrate; and forming a source-drain layer on the substrate, wherein, the step of forming the oxide semiconductor layer and the barrier layer comprises: sequentially forming an oxide semiconductor film a the barrier film; and forming the oxide semiconductor layer from the oxide semiconductor film and the barrier layer from the barrier film by performing a patterning process once.

    摘要翻译: 本发明提供了可应用于显示装置制造领域的薄膜晶体管和阵列基板的制造方法,解决了在薄膜晶体管和阵列基板的制造过程中进行图案化处理太多次的问题 。 制造薄膜晶体管的方法包括:在衬底上形成栅极层; 在所述基板上形成栅极绝缘层; 在所述基板上形成氧化物半导体层和阻挡层; 以及在所述衬底上形成源极 - 漏极层,其中形成所述氧化物半导体层和所述势垒层的步骤包括:顺序地形成所述阻挡膜的氧化物半导体膜; 并且通过进行一次图案化处理,从氧化物半导体膜和阻挡层形成氧化物半导体层。