摘要:
The present invention provides a process for protecting organic materials that can be damaged by ultraviolet light from the effects of ultraviolet rays, characterized in that a bis-oxalic acid amide ester is incorporated with, or applied to the surface of the materials to be protected, or a filter layer containing the bis-oxalic acid amide esters is placed in front of said materials, the said bis-oxalic acid amide ester corresponding to the formula A1-O-CO-CO-NH-W1-NH-CO-CO-O-B1 in which A1 and B1 are identical or different and each represents an organic residue and should not displace the absorption maximum of these compounds to values above 370 Mu ; W1 represents an organic residue and should not displace the absorption maximum of these compounds to values above 370 Mu ; W1 represents an organic residue, and X1 represents an alkylene group containing one to four carbon atoms or a bridge member -O-, -S-, -N- or -SO2-. Furthermore the invention discloses a certain class of novel symmetric bis-oxalic acid amide esters as defined by formula (6) of the specification and a process for the manufacture of the symmetric bis-oxalic acid amide esters defined above.
摘要:
THE PRESENT INVENTION IS CONCERNED WITH A NEW ARYLGUANAMINES WHEREIN ONE CARBON ATOM OF THE TRIAZINE RING IS LINKED DIRECTLY TO A BENZENE RING, THE SECOND CARBON ATOM IS LINKED BY AN -NH- GROUP TO A BENZENE RING AND THE THIRD CARBON ATOM IS LINKED TO AN - HN- ALKYLENE GROUP, THE LATTER BEING BOUND TO THE NITROGEN ATOMS OF A TERTIARY AMINO GROUP. THE NEW ARYLGUANAMINES ARE USEFUL FOR CONTROLLING HARMFUL MICROORGANISMS.
摘要:
PREPARATIONS FOR COMBATING HARMFUL MICROORGANISMS CONTAINING AS ACTIVE INGREDIENT 2,4''-DIHYDROXY-3'',5''-DITERTIARY BUTYL-DIPHENYLKETONES-(1,1'') CARRYING A SUBSTITUENT IN THE 4-POSITION.
摘要:
THIS INVENTION PROVIDES NEW SALICYCLIC O-HYDROXYPHENYLAMIDES OF THE GENERAL FORMULA
R-CO-NH-R''
WHEREIN R AND R'' EACH REPRESENTS A PHENYL GROUP WITH AN ORTHO HYDROXY GROUP. R MAY BE FURTHER SUBSTITUTED IN 3 TO 5 POSITION BY CHLORINE OR BROMINE AND R'' IS FURTHER SUBSTITUTED IN 4'' OR 5'' POSITION BY TRIFLUOROMETHYL ALKYL, CYCLOALKYL, ARYL AND ARALKYL RESIDUES.
摘要:
The present invention provides a process for protecting organic materials which may be damaged by exposure to ultraviolet rays, from damage by ultraviolet irradiation, characterized in that an oxalic acid diamide derivative is incorporated with or applied to the surface of the materials to be protected or in front of said materials a filter layer is placed that contains such oxalic acid diamide derivative of the formula: Ar1-NH-CO-CO-B1 in which Ar1 represents a benzene or naphthalene residue, which may be substituted by phenyl, benzazolyl, cyclohexyl, benzoyloxy or aliphatic groups with not more than 20 carbon atoms, and wherein B1 represents a residue of the partial formula- NH-D1 or
WHERE D1 stands for a possibly substituted alkyl group, alkenyl, hydroxyl, cycloalkyl, carboxylic or sulfonic acid group or a functional derivative thereof; Q represents a member selected from the group consisting of hydrogen, hydroxyalkyl, alkoxyalkyl and Q+W represents a piperidino and a morpholino residue and W stands for a member selected from the group consisting of hydroxyalkyl, alkoxyalkyl, acyl, a carboxylic group, a sulfonic acid group, a functional derivative thereof, a residue of the formula- NHWx (where Wx is hydrogen, alkyl, acyl or phenyl), and an aminoalkyl group whose amino group may be alkylated, cycloalkylated or arylated.
摘要:
Urethanes consisting of a 2-hydroxy-1,1''-diphenyl ketone having an R-NH-CO-0- group in 4-position and wherein R e.g. represents an alkyl or an aryl radical. These urethanes are useful as stabilizers for organic material and above all as agents for combatting harmful micro-organisms.
摘要:
This invention refers to a process for protecting organic materials that can be damaged by ultraviolet rays, from the action of ultraviolet rays, wherein asymmetrical oxalic acid diarylamides of the general formula A-NH-CO-CO-NH-B where A and B are different from each other and each represents a benzene or naphthalene residue, these residues A and B (a) being free from hydroxyl groups in the ortho-positions to the amide nitrogen atom and (b) containing if desired substituents that contain no more than 20 carbon atoms and do not displace the absorption maximum of the compound towards values above 400 m mu , are applied to said materials, as well as compositions containing said oxalic acid diarylamides.